Vishay 180RKI...PbF Series, 181RKI...PbF Series Data Sheet

TO-209AB (TO-93)

PRODUCT SUMMARY

I

T(AV)

180RKI...PbF /181RKI...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 180 A

FEATURES

• Hermetic glass-metal seal

• International standard case TO-209AB ( TO-93)

•RoHS complaint

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

180 A

• Controlled DC power supplies

• AC controllers

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 3800

60 Hz 4000

50 Hz 72

60 Hz 66

Typical 100 µs

180 A

80 °C

285

400 to 1000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

PART NUMBER

180/181RKI

V

VOLTAGE

CODE

40 400 500

100 1000 1100

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

AT T

J

A

kA2s

MAXIMUM

= TJ MAXIMUM

mA

3080 800 900

Document Number: 94382 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

www.vishay.com

180RKI...PbF /181RKI...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 180 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

I

Maximum RMS on-state current I

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 720 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

RMS

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave

DC at 79 °C case temperature 285

t = 10 ms

t = 8.3 ms 4000

t = 10 ms

t = 8.3 ms 3660

t = 10 ms

t = 8.3 ms 66

t = 10 ms

t = 8.3 ms 56

(16.7 % x π x I
(I > π × I
(16.7 % x π x I
(I > π I

T(AV)

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
intial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.89

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.83

T(AV)

), TJ = TJ maximum 0.92

T(AV)

), TJ = TJ maximum 0.81

Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 V

TJ = 25 °C, anode supply 12 V resistive load

180 A

80 °C

3800

3500

72

61

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

DRM

ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/µs, VR = 100 V
dV/dt = 20 V/µs

≤ 1 µs

r

, TJ = 25 °C

DRM

300 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of
rise of off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

RRM,

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94382

2 Revision: 11-Aug-08

180RKI...PbF /181RKI...PbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 180 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, tp ≤ 5 ms 10

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

= 25 °C 65 150

J

T

= 125 °C 35 -

J

TJ = - 40 °C 2.0 -

= 25 °C 1.2 2.5

J

T

= 125 °C 0.9 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage not
to trigger is the maximum value

TJ = TJ maximum

which will not trigger any unit with
rated V

anode to cathode

DRM

applied

VALUES

TYP. MAX.

3.0 A

20

5.0

130 -

10 mA

0.25 V

UNITS

W

V

mAT

VT

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Mounting force, ± 10 %

Approximate weight 280 g

Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.050 0.032

120° 0.063 0.059

90° 0.080 0.082

60° 0.118 0.124

30° 0.225 0.228

Note

• The table above shows the increment of thermal resistance R

Document Number: 94382 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 3

R

R

T

J

Stg

thJC

thCS

- 40 to 125

- 40 to 150

DC operation 0.15

Mounting surface, smooth, flat and greased 0.04

Non-lubricated threads

Lubricated threads

when devices operate at different conduction angles than DC

thJC

T

= TJ maximum K/W

J

31

(275)

24.5

(210)

°C

K/W

Nm

(lbf · in)

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