Vishay 180RKI...PbF Series, 181RKI...PbF Series Data Sheet

TO-209AB (TO-93)

PRODUCT SUMMARY

I

T(AV)

180RKI...PbF /181RKI...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 180 A

FEATURES

• Hermetic glass-metal seal

• International standard case TO-209AB ( TO-93)

•RoHS complaint

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

180 A

• Controlled DC power supplies

• AC controllers

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 3800

60 Hz 4000

50 Hz 72

60 Hz 66

Typical 100 µs

180 A

80 °C

285

400 to 1000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

PART NUMBER

180/181RKI

V

VOLTAGE

CODE

40 400 500

100 1000 1100

DRM/VRRM

PEAK AND OFF-STATE VOLTAGE

, MAXIMUM REPETITIVE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

I

DRM/IRRM

AT T

J

A

kA2s

MAXIMUM

= TJ MAXIMUM

mA

3080 800 900

Document Number: 94382 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 1

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180RKI...PbF /181RKI...PbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 180 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

I

Maximum RMS on-state current I

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 720 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

RMS

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

180° conduction, half sine wave

DC at 79 °C case temperature 285

t = 10 ms

t = 8.3 ms 4000

t = 10 ms

t = 8.3 ms 3660

t = 10 ms

t = 8.3 ms 66

t = 10 ms

t = 8.3 ms 56

(16.7 % x π x I
(I > π × I
(16.7 % x π x I
(I > π I

T(AV)

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
intial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.89

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.83

T(AV)

), TJ = TJ maximum 0.92

T(AV)

), TJ = TJ maximum 0.81

Ipk = 570 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.35 V

TJ = 25 °C, anode supply 12 V resistive load

180 A

80 °C

3800

3500

72

61

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

DRM

ITM = 50 A, TJ = TJ maximum, dI/dt = 10 A/µs, VR = 100 V
dV/dt = 20 V/µs

≤ 1 µs

r

, TJ = 25 °C

DRM

300 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of
rise of off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

I

RRM,

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

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Document Number: 94382

2 Revision: 11-Aug-08

180RKI...PbF /181RKI...PbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 180 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, tp ≤ 5 ms 10

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

= 25 °C 65 150

J

T

= 125 °C 35 -

J

TJ = - 40 °C 2.0 -

= 25 °C 1.2 2.5

J

T

= 125 °C 0.9 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage not
to trigger is the maximum value

TJ = TJ maximum

which will not trigger any unit with
rated V

anode to cathode

DRM

applied

VALUES

TYP. MAX.

3.0 A

20

5.0

130 -

10 mA

0.25 V

UNITS

W

V

mAT

VT

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Mounting force, ± 10 %

Approximate weight 280 g

Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.050 0.032

120° 0.063 0.059

90° 0.080 0.082

60° 0.118 0.124

30° 0.225 0.228

Note

• The table above shows the increment of thermal resistance R

Document Number: 94382 For technical questions, contact: [e-mail]
Revision: 11-Aug-08 3

R

R

T

J

Stg

thJC

thCS

- 40 to 125

- 40 to 150

DC operation 0.15

Mounting surface, smooth, flat and greased 0.04

Non-lubricated threads

Lubricated threads

when devices operate at different conduction angles than DC

thJC

T

= TJ maximum K/W

J

31

(275)

24.5

(210)

°C

K/W

Nm

(lbf · in)

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180RKI...PbF /181RKI...PbF Series

)

Vishay High Power Products

130

120

110

100

90

80

70

Maximum Allowab le Case Temperature (°C)

0 20 40 60 80 100 120 140 160 180 200

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

181RKI Series
R

(DC) = 0.15 K/W

thJC

Cond uctio n Angle

30°

60°

90°

120°

Average On-state Current (A)

240

220

200

180

160

140

120

180°
120°

90°
60°
30°

RM S Li m it

100

80

60

40

20

0

Maximum Average On-sta te Power Loss (W)

0 20406080100120140160180

Average On-state Current (A)

Phase Control Thyristors

(Stud Version), 180 A

180°

0

.

3

0

.

6

K

/

W

0

.

8

K

/

W

1

K

/

W

Cond uctio n Angle

181RKI Ser ies
T = 12 5° C

J

1

.

5K

/

W

2

K

/

W

0 25 50 75 100 125

Maximum Allowable Ambient Temp erature (°C)

130

120

110

181RKI Series
R (DC) = 0.15 K/ W

thJC

Conduction Period

100

90

80

30°

60°

90°

120°

180°

DC

70

Maximum Allowable Case Temperature (°C)

0 50 100 150 200 250 300

Average On-state Current (A)

R

0

t

h

.

2

S

A

K

K

/

/

W

=

W

0

.

1

K

/

W

­D

e

l

t

a

R

Fig. 3 - On-State Power Loss Characteristics

350

300

250

200

150

100

50

0

Maximum Averag e On-st ate Power Loss (W

0 50 100 150 200 250 300

DC
180°
120°

90°

60°

30°

RM S Li m i t

Cond uction Period

Average On-state Current (A)

181RKI Serie s
T = 12 5 °C

J

R

t

h

0

0

.

3

K

/

0

.

6

K

/

0

.

8

K

/

1

K

/

W

1

.

5

K

/

2

K

/

W

S

.

A

2

K

W

W

W

W

=

/

W

0

.

1

K

/

W-

D

e

l

t

a

R

0 25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics

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Document Number: 94382

4 Revision: 11-Aug-08

180RKI...PbF /181RKI...PbF Series

Phase Control Thyristors

(Stud Version), 180 A

4000

At Any Rat ed Loa d Con dit ion A nd With

Rat ed V A pplied Following Surge .

RRM

3500

3000

2500

2000

181RKI Serie s

Peak Half Sine Wave On-state Curren t (A)

1500

110100

Numbe r Of Eq ual A mplitud e Half C ycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Init ial T = 125°C

J

at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10000

Vishay High Power Products

4000

Maximum Non Re pe titive Surge Current

Versus Pulse Train Duration. Control

Of Cond uct ion May Not Be Ma intained .

3500

3000

2500

2000

181RKI Serie s

Peak Half Sine Wave On-sta te Current ( A)

1500

0.01 0.1 1

Pulse Tra in Du ra tio n ( s)

Fig. 6 - Maximum Non-Repetitive Surge Current

Init ial T = 125° C

No Voltage Reapplied

Rat ed V Reap plied

J

RRM

T = 25 ° C

1000

In st a n ta n eo u s On -st a t e C ur re nt ( A)

100

J

T = 12 5 °C

J

181RKI Se rie s

0.5 1 1.5 2 2.5 3

Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

1

St e a d y St a t e V a l u e

R = 0.15 K/W

thJC

Transient Thermal Impedance Z (K/ W)

0.001

thJC

(DC Operation)

0.1

0.01

181RKI Se rie s

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 8 - Thermal impedance Z

Characteristics

thJC

Document Number: 94382 For technical questions, contact: [e-mail]

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Revision: 11-Aug-08 5

180RKI...PbF /181RKI...PbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rat ed di/ dt : 20V, 30ohms;
tr<=0.5 µs, tp =>6µs
b) Recommended load line for

10

<= 30% rat ed d i/ d t: 15 V, 40o hms
tr<=1 µs, tp =>6µs

1

Instantaneous Gate Voltage (V)

ORDERING INFORMATION TABLE

Device code

VGD

0.1

0.001 0.01 0.1 1 10 100 1000

IGD

Phase Control Thyristors

(Stud Version), 180 A

(1) PGM = 12W, tp = 5ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 200W, tp = 300µ s

(b)

(a)

Tj = - 40 ° C

Tj= 2 5 ° C

Tj =1 4 0 °C

(1)

Devic e: 181RKI Series

Instantaneous Gate Current (A)

Fig. 9 - Gate Characteristics

18 1 RKI 100 PbF

Frequenc y Limited by PG(AV)

(2)

(3)

(4)

51324

1 -I

rated average output current (rounded/10)

T(AV)

2 - 0 = Eyelet terminals (gate and auxiliary cathode leads)

1 = Fast-on terminals (gate and auxiliary cathode leads)

3 - Thyristor

4

- Voltage code x 10 = V

(see Voltage Ratings table)

RRM

5 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95077

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Document Number: 94382

6 Revision: 11-Aug-08

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1

DIMENSIONS in millimeters (inches)

Glass metal seal

Outline Dimensions

Vishay High Power Products

TO-209AB (TO-93)

Case Style TO-209AB (TO-93)

19 (0.75) MAX.

210 (8.26) ± 10 (0.39)

82 (3.23) MIN.

MAX.

28.5 (1.12)

8.5 (0.33) DIA.

Red silicon rubber

Red cathode

Red shrink

16 (0.63) MAX.

MAX.

21 (0.83)

35 (1.38)

MAX.

4.3 (0.17) DIA.

White gate

White shrink

28.5 (1.12)
MAX. DIA.

3/4"-16UNF-2A

C.S. 0.4 mm

(0.006 s.i.)

SW 32

2

220 (8.66) ± 10 (0.39)

Flexible lead

C.S. 25 mm

(0.039 s.i.)

4 (0.16) MAX.

2

9.5 (0.37) MIN.

22 (0.86) MIN.

Fast-on terminals

AMP. 280000-1

REF-250

Document Number: 95077 For technical questions concerning discrete products, contact: [e-mail]
Revision: 01-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1