Datasheet 16TTS..SPbF High Voltage Series DataSheet (Vishay)

D2PAK
PRODUCT SUMMARY
VT at 10 A < 1.4 V
I
TSM
V
RRM
16TTS..SPbF High Voltage Series
Surface Mountable Phase
Control SCR, 16 A
DESCRIPTION/FEATURES
Anode
Cathode
2
1
3 Gate
200 A
800/1200 V
The 16TTS..SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.
Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.
This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix).
Available
RoHS*
COMPLIANT
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 µm) copper
Aluminum IMS, R
Aluminum IMS with heatsink, R
Note
•T
= 55 °C, TJ = 125 °C, footprint 300 mm
A
= 15 °C/W 6.3 9.5
thCA
= 5 °C/W 14.0 18.5
thCA
2
2.5 3.5
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
T(AV)
I
RMS
V
RRM/VDRM
I
TSM
V
T
dV/dt 500 V/µs
dI/dt 150 A/µs
T
J
Sinusoidal waveform 10
16
800/1200 V
200 A
10 A, TJ = 25 °C 1.4 V
- 40 to 125 °C
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
16TTS08SPbF 800 800
16TTS12SPbF 1200 1200
REVERSE VOLTAGE
V
V
, MAXIMUM PEAK
DRM
DIRECT VOLTAGE
V
I
RRM/IDRM
AT 125 °C
A
A
mA
10
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94589 For technical questions, contact: diodes-tech@vishay.com Revision: 02-Jul-08 1
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16TTS..SPbF High Voltage Series
Vishay High Power Products
Surface Mountable Phase
Control SCR, 16 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
Maximum average on-state current I
Maximum RMS on-state current I
Maximum peak, one-cycle, non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2000 A2√s
I
Maximum on-state voltage drop V
On-state slope resistance r
Threshold voltage V
Maximum reverse and direct leakage current I
RM/IDM
Holding current I
Maximum latching current I
T(AV)
RMS
TSM
TM
t
T(TO)
H
L
TC = 93 °C, 180° conduction, half sine wave 10
16
10 ms sine pulse, rated V
applied 170
RRM
10 ms sine pulse, no voltage reapplied 200
10 ms sine pulse, rated V
applied 144
RRM
10 ms sine pulse, no voltage reapplied 200
16 A, TJ = 25 °C 1.4 V
TJ = 125 °C
TJ = 25 °C
= 125 °C 10
T
J
V
= Rated V
R
RRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A - 100
Anode supply = 6 V, resistive load 200
Maximum rate of rise of off-state voltage dV/dt 500 V/µs
Maximum rate of rise of turned-on current dI/dt 150 A/µs
VALUES
TYP. MAX.
24.0 mΩ
1.1 V
0.5
UNITS
A
2
A
s
mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current + I
Maximum peak negative gate voltage - V
GM
G(AV)
GM
GM
8.0
2.0
1.5 A
10 V
W
Anode supply = 6 V, resistive load, TJ = - 10 °C 90
Maximum required DC gate current to trigger I
GT
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
= 25 °C 60
J
= 125 °C 35
J
mA
Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0
Maximum required DC gate voltage to trigger
Maximum DC gate voltage not to trigger V
Maximum DC gate current not to trigger I
V
GT
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
GD
GD
TJ = 125 °C, V
= Rated value
DRM
= 25 °C 2.0
J
= 125 °C 1.0
J
V
0.25
2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
Typical turn-off time t
gt
rr
q
TJ = 25 °C 0.9
TJ = 125 °C
4
110
µsTypical reverse recovery time t
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Document Number: 94589
2 Revision: 02-Jul-08
16TTS..SPbF High Voltage Series
Surface Mountable Phase
Vishay High Power Products
Control SCR, 16 A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Soldering temperature T
Maximum thermal resistance, junction to case
Typical thermal resistance, junction to ambient
Approximate weight
Marking device Case style D
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994.
T
, T
J
Stg
S
R
thJC
R
thJA
For 10 s (1.6 mm from case) 240
DC operation 1.3
PCB mount
(1)
2
PAK (SMD-220)
- 40 to 125
40
2g
0.07 oz.
16TTS08S
16TTS12S
°C
°C/W
Document Number: 94589 For technical questions, contact: diodes-tech@vishay.com Revision: 02-Jul-08 3
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16TTS..SPbF High Voltage Series
Vishay High Power Products
125
120
115
110
105
100
95
90
024681012
Maximum Allowable Case Temperature (°C)
Fig. 1 - Current Rating Characteristics
125
120
115
110
16TTS.. Series R (DC) = 1.3 °C /W
thJC
Conduction Angle
30°
60°
90°
120°
Average On-state Current (A)
16TTS.. Series R (DC) = 1.3 °C/W
thJC
Conduction Period
Surface Mountable Phase
Control SCR, 16 A
180°
25
DC 180° 120°
20
90°
60°
30°
15
RMS Limit
10
Conduction Period
5
0
Maximum Aver age On-state Power Loss (W)
024681012141618
Average On-state Current (A)
16TTS.. Series T = 125°C
J
Fig. 4 - On-State Power Loss Characteristics
180
At Any Rated Loa d Cond iti on An d With
Rated V Applied Following Surge.
RRM
160
140
Initial T = 125°C
J
@ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
105
100
95
90
Maximum Allowable Case Temperature (°C)
0246810121416
30°
60°
90°
120°
180°
Average On-state Current (A)
DC
Fig. 2 - Current Rating Characteristics
18
180°
16
120°
90°
14
60° 30°
12
RMS Limit
10
8
6
4
2
0
Maximum Average On-state Power Loss (W)
01234567891011
Average On-state Current (A)
Cond u ct io n An g le
16TTS.. Series T = 125°C
J
Fig. 3 - On-State Power Loss Characteristics
120
100
16TTS..Series
Peak Half Sine Wave On-state Current (A)
80
110100
Numb er Of Eq ua l Amplitude Hal f Cyc le Curr ent Pu lse s (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
200
Maximum Non Repetitive Surge Current
180
160
140
120
100
16TTS. . Series
Peak Half Sine Wave Forward Current (A)
80
0.01 0.1 1
Versus Pulse Train Duration.
Initial T = 125°C
J
No Voltage Reapplied Rated V Reapplied
RRM
Pulse Train Duration (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
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Document Number: 94589
4 Revision: 02-Jul-08
16TTS..SPbF High Voltage Series
Surface Mountable Phase
Vishay High Power Products
Control SCR, 16 A
1000
16TTS.. Series
100
10
Instan taneous On-s tate Current (A)
1
012 345
Insta ntaneo us On-state Vol tage (V)
Fig. 7 - On-State Voltage Drop Characteristics
10
T = 25°C
J
T = 125°C
J
Steady State Value
(DC Operation)
thJC
1
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
0.1
Transient Thermal Impedance Z (° C/W)
0.01
0.0001 0.001 0.01 0.1 1 10
Fig. 8 - Thermal Impedance Z
100
Rectangular gate pulse a)Recommended load line for
rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
1
VGD
Instantaneous Gate Voltage (V)
0.1
IGD
0.001 0.01 0.1 1 10 100
Single Pulse
Square Wave Pulse Duration (s)
(a)
(b)
TJ = -1 0 °C
TJ = 25
TJ = 1 25 °C
°C
16TTS.. Series
Insta n tane ous G ate Cur ren t (A )
16TTS.. Series
Characteristics
thJC
(1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms
(3) (2) (1)
(4)
Frequency Limited by PG(AV)
Fig. 9 - Gate Characteristics
Document Number: 94589 For technical questions, contact: diodes-tech@vishay.com
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Revision: 02-Jul-08 5
16TTS..SPbF High Voltage Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
16 T T S 12 S TRL PbF
1 - Current rating
2 - Circuit configuration:
T = Single thyristor
3 - Package:
T = TO-220AC
4
- Type of silicon:
S = Standard recovery rectifier
5
- Voltage rating: Voltage code x 100 = V
6 - S = TO-220 D
7 -
8 -
Surface Mountable Phase
Control SCR, 16 A
51324
678
2
PAK (SMD-220) version
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
None = Standard production
PbF = Lead (Pb)-free
RRM
08 = 800 V
12 = 1200 V
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95046
Part marking information http://www.vishay.com/doc?95054
Packaging information http://www.vishay.com/doc?95032
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 6 Revision: 02-Jul-08
Document Number: 94589
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1
DIMENSIONS in millimeters and inches
Outline Dimensions
D2PAK
Conforms to JEDEC outline D
(2)(3)
E
(3)
L1
D
L2
2 x
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
4
132
BB
e
2
H
2 x b2
2 x b
0.010
PAK (SMD-220)
A
Detail A
(2)
C
MM
A
Lead tip
B
A
c2
AA
A
c
M
± 0.004
B
Gauge
0° to 8°
plane
L3
B
L
L4
Detail “A”
Rotated 90 °CW
Scale: 8:1
(E)
E1
View A - A
A1
(3)
(D1)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
Plating
Seating
plane
2.64 (0.103)
2.41 (0.096)
(3)
H
B
Pad layout
11.00 MIN.
(0.43)
MIN.
(4)
b1, b3
(c)
(b, b2)
Section B - B and C - C
Scale: None
9.65
(0.38)
3.81
(0.15)
c1
MIN.
MIN.
Base Metal
(4)
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 - 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
(7)
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
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Revision: 05-Dec-08 For technical questions concerning module products, contact: ind-modules@vishay.com
1
D2PAK
Part Marking Information
Assembly lot code
xxxxxxS
V PYWWXA
8024
Part number
Product version (optional): P = Lead (Pb)-free None = Standard Date code: Year 0 = 2000 Week 02 Line X Child lot A
Example: This is a xxxxxxS with assembly lot code 8024, assembled on WW 02, 2000
Document Number: 95054 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 17-Oct-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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1
D2PAK
TAPE AND REEL INFORMATION in millimeters (inches)
P
2
Ø 1.55 ± 0.05
Ø 1.6 ± 0.1
R 0.3
TYP.
2.0 ± 0.1
Y
See note (5)
C
2.17 ± 0.1
P
0
4.0 ± 0.1
See note (1)
Packaging Information
C
1.75 ± 0.1
C
F
11.50 ± 0.1
1.57 ± 0.1
See note (5)
C
W
24.00 ± 0.3
Y
P
1
16.00 ± 0.1
0.35 ± 0.05
0.12 MAX.
C
L
1.20
K
0
4.90 ± 0.1
Section Y - Y
A
0
10.50 ± 0.1
2
B
10.25 ± 0.1
C
C
0
B
15.80 ± 0.1
C
Notes
(1)
10 sprocket hole pitch cumulative tolerance ± 0.02
(2)
Camber not to exceed 1 mm in 100 mm
(3)
Material: conductive black styrenic alloy
(4)
K0 measured from a plane on the inside bottom of the pocket to the top surface of the carrier
(5)
Measured from centerline of sprocket hole to centerline of pocket
(6)
Vendor: (optional)
(7)
Must also meet requirements of EIA standard # EIA-481A taping of surface mount components for automatic placement
(8)
Surface resistivity of molded material must measure less or equal to 106 Ω per square. Measured in accordance to procedure given in ASTM D-257 and ASTM D-991
(9)
Total length per reel must be 45 m
(10)
critical
C
Document Number: 95032 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 17-Apr-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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