Vishay 16TTS..SPbF High Voltage Series Data Sheet

D2PAK
PRODUCT SUMMARY
VT at 10 A < 1.4 V
I
TSM
V
RRM
16TTS..SPbF High Voltage Series
Surface Mountable Phase
Control SCR, 16 A
DESCRIPTION/FEATURES
Anode
Cathode
2
1
3 Gate
200 A
800/1200 V
The 16TTS..SPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.
Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.
This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix).
Available
RoHS*
COMPLIANT
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
NEMA FR-4 or G-10 glass fabric-based epoxy with 4 oz. (140 µm) copper
Aluminum IMS, R
Aluminum IMS with heatsink, R
Note
•T
= 55 °C, TJ = 125 °C, footprint 300 mm
A
= 15 °C/W 6.3 9.5
thCA
= 5 °C/W 14.0 18.5
thCA
2
2.5 3.5
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
T(AV)
I
RMS
V
RRM/VDRM
I
TSM
V
T
dV/dt 500 V/µs
dI/dt 150 A/µs
T
J
Sinusoidal waveform 10
16
800/1200 V
200 A
10 A, TJ = 25 °C 1.4 V
- 40 to 125 °C
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
16TTS08SPbF 800 800
16TTS12SPbF 1200 1200
REVERSE VOLTAGE
V
V
, MAXIMUM PEAK
DRM
DIRECT VOLTAGE
V
I
RRM/IDRM
AT 125 °C
A
A
mA
10
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94589 For technical questions, contact: diodes-tech@vishay.com Revision: 02-Jul-08 1
www.vishay.com
16TTS..SPbF High Voltage Series
Vishay High Power Products
Surface Mountable Phase
Control SCR, 16 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
Maximum average on-state current I
Maximum RMS on-state current I
Maximum peak, one-cycle, non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2000 A2√s
I
Maximum on-state voltage drop V
On-state slope resistance r
Threshold voltage V
Maximum reverse and direct leakage current I
RM/IDM
Holding current I
Maximum latching current I
T(AV)
RMS
TSM
TM
t
T(TO)
H
L
TC = 93 °C, 180° conduction, half sine wave 10
16
10 ms sine pulse, rated V
applied 170
RRM
10 ms sine pulse, no voltage reapplied 200
10 ms sine pulse, rated V
applied 144
RRM
10 ms sine pulse, no voltage reapplied 200
16 A, TJ = 25 °C 1.4 V
TJ = 125 °C
TJ = 25 °C
= 125 °C 10
T
J
V
= Rated V
R
RRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A - 100
Anode supply = 6 V, resistive load 200
Maximum rate of rise of off-state voltage dV/dt 500 V/µs
Maximum rate of rise of turned-on current dI/dt 150 A/µs
VALUES
TYP. MAX.
24.0 mΩ
1.1 V
0.5
UNITS
A
2
A
s
mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current + I
Maximum peak negative gate voltage - V
GM
G(AV)
GM
GM
8.0
2.0
1.5 A
10 V
W
Anode supply = 6 V, resistive load, TJ = - 10 °C 90
Maximum required DC gate current to trigger I
GT
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
= 25 °C 60
J
= 125 °C 35
J
mA
Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0
Maximum required DC gate voltage to trigger
Maximum DC gate voltage not to trigger V
Maximum DC gate current not to trigger I
V
GT
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
GD
GD
TJ = 125 °C, V
= Rated value
DRM
= 25 °C 2.0
J
= 125 °C 1.0
J
V
0.25
2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
Typical turn-off time t
gt
rr
q
TJ = 25 °C 0.9
TJ = 125 °C
4
110
µsTypical reverse recovery time t
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 94589
2 Revision: 02-Jul-08
16TTS..SPbF High Voltage Series
Surface Mountable Phase
Vishay High Power Products
Control SCR, 16 A
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Soldering temperature T
Maximum thermal resistance, junction to case
Typical thermal resistance, junction to ambient
Approximate weight
Marking device Case style D
Note
(1)
When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 µm) copper 40 °C/W. For recommended footprint and soldering techniques refer to application note #AN-994.
T
, T
J
Stg
S
R
thJC
R
thJA
For 10 s (1.6 mm from case) 240
DC operation 1.3
PCB mount
(1)
2
PAK (SMD-220)
- 40 to 125
40
2g
0.07 oz.
16TTS08S
16TTS12S
°C
°C/W
Document Number: 94589 For technical questions, contact: diodes-tech@vishay.com Revision: 02-Jul-08 3
www.vishay.com
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