Bulletin I2105 rev. D 12/98
SAFE
IR
Series
16TTS..S
SURFACE MOUNTABLE
PHASE CONTROL SCR
Description/Features
The 16TTS..S SAFEIR series of silicon controlled
rectifiers are specifically designed for medium
power switching and phase control applications.
The glass passivation technology used has reliable operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identical package outlines.
Output Current in Typical Applications
Applications Single-phase Bridge Three-phase Bridge Units
NEMA FR-4 or G10 glass fabric-based epoxy
with 4 oz (140µm) copper
Aluminum IMS, R
Aluminum IMS with heatsink, R
TA = 55°C, TJ = 125°C, footprint 300mm
Major Ratings and Characteristics
= 15°C/W 6.3 9.5 A
thCA
= 5°C/W 14.0 18.5
thCA
2
2.5 3.5
Package Outline
V
I
TSM
V
< 1.4V @ 10A
T
= 200A
= 800 to 1600V
RRM
Characteristics 16TTS..S Units
I
Sinusoidal 10 A
T(AV)
waveform
I
RMS
V
V
/
RRM
DRM
I
TSM
V
@ 10 A, TJ = 25°C 1.4 V
T
dv/dt 500 V/µs
di/dt 150 A/µs
T
J
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16 A
up to 1600 V
200 A
- 40 to 125 °C
D2 PAK (SMD-220)
1
16TTS.. S SAFE
IR
Series
Bulletin I2105 rev. D 12/98
Voltage Ratings
V
Part Number
, maximum V
RRM
peak reverse voltage peak direct voltage 125°C
, maximum I
DRM
VVmA
16TTS08S 800 80 0 10
16TTS12S 1200 1200
16TTS16S 1600 1600
Absolute Maximum Ratings
Parameters 16TTS..S Units Conditions
I
Max. Average On-state Current 10 A @ TC = 98° C, 180° conduction half sine wave
T(AV)
I
Max. RMS On-state Current 1 6
RMS
I
Max. Peak One Cycle Non-Repetitive 170 10ms Sine pulse, rated V
TSM
Surge Current 200 10ms Sine pulse, no voltage reapplied
I2t Max. I2t for fusing 144 A2s 10ms Sine pulse, rated V
200 10ms Sine pulse, no voltage reapplied
I2√t Max. I2√t for fusing 2000 A2√s t = 0.1 to 10ms, no voltage reapplied
VTMMax. On-state Voltage Drop 1.4 V @ 10A, TJ = 25°C
r
On-state slope resistance 24.0 mΩ TJ = 125°C
t
V
Threshold Voltage 1.1 V
T(TO)
IRM/IDMMax.Reverse and Direct 0.5 mA TJ = 25 °C
Leakage Current 10 TJ = 125 °C
I
Holding Current Typ. Max. Anode Supply = 6V, Resistive load, Initial IT=1A
H
-- 100 mA 16TTS08S, 16TTS12S
100 150 16TTS16S
IL Max. Latching Current 200 m A Anode Supply = 6V, Resistive load
dv/dt Max. Rate of Rise of off-state Voltage 500 V/µs
di/dt Max. Rate of Rise of turned-on Current 150 A/µs
applied
RRM
applied
RRM
VR = rated V
RRM
/ V
RRM/IDRM
DRM
2
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16TTS.. S SAFE
Bulletin I2105 rev. D 12/98
IR
Series
Triggering
Parameters 16TTS..S Units Conditions
PGMMax. peak Gate Power 8.0 W
P
Max. average Gate Power 2.0
G(AV)
+ I
Max. paek positive Gate Current 1.5 A
GM
Max. paek negative Gate Voltage 10 V
- V
GM
IGTMax. required DC Gate Current 90 mA Anode supply = 6V, resistive load, TJ = - 10°C
to trigger 60 Anode supply = 6V, resistive load, TJ = 25°C
35 Anode supply = 6V, resistive load, T
Max. required DC Gate Voltage 3.0 V Anode supply = 6V, resistive load, TJ = - 10°C
V
GT
to trigger 2.0 Anode supply = 6V, resistive load, T
1.0 Anode supply = 6V, resistive load, TJ = 125°C
Max. DC Gate Voltage not to trigger 0.25 TJ = 125°C, V
V
GD
IGDMax. DC Gate Current not to trigger 2.0 mA TJ = 125°C, V
= rated value
DRM
= rated value
DRM
= 125°C
J
= 25°C
J
Switching
Parameters 16TTS..S Units Conditions
t
Typical turn-on time 0.9 µs TJ = 25°C
gt
t
Typical reverse recovery time 4 TJ = 125°C
rr
t
Typical turn-off time 110
q
Thermal-Mechanical Specifications
Parameters 16TTS..S Units Conditions
TJMax. Junction Temperature Range - 40 to 125 °C
Max. Storage Temperature Range - 40 to 125 °C
T
stg
Soldering Temperature 240 °C for 10 seconds (1.6mm from case)
R
Max. Thermal Resistance Junction 1.3 °C/W DC operation
thJC
to Case
R
Typ. Thermal Resistance Junction 40 °C/W
thJA
to Ambient (PCB Mount)**
wt Approximate Weight 2 (0.07) g (oz.)
T Case Style D
**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W
For recommended footprint and soldering techniques refer to application note #AN-994
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2
Pak (SMD-220)
3