Vishay 16TTS..S Data Sheet

Vishay 16TTS..S Data Sheet

Bulletin I2105 rev. D 12/98

SAFEIR Series

16TTS..S

SURFACE MOUNTABLE PHASE CONTROL SCR

Description/Features

The 16TTS..SSAFEIR series of silicon controlled rectifiers are specifically designed for medium

power switching and phase control applications. The glass passivation technology used has reliable operation up to 125° C junction temperature.

Typical applications are in input rectification (soft start) and these products are designed to be used with International Rectifier input diodes, switches and output rectifiers which are available in identical package outlines.

VT

< 1.4V @ 10A

ITSM

= 200A

VRRM

= 800 to 1600V

 

 

Output Current in Typical Applications

Applications

 

 

 

Single-phase Bridge

 

Three-phase Bridge

Units

 

 

 

 

 

 

 

 

NEMA FR-4 or G10 glass fabric-based epoxy

 

2.5

 

3.5

 

with 4 oz (140µm) copper

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Aluminum IMS, RthCA = 15°C/W

 

6.3

 

9.5

A

 

 

 

 

 

 

Aluminum IMS with heatsink, RthCA = 5°C/W

 

14.0

 

18.5

 

 

 

 

 

 

 

 

 

TA = 55°C, T J = 125°C, footprint 300mm 2

 

 

 

 

 

 

 

Major Ratings and Characteristics

 

 

Package Outline

 

 

 

 

 

 

 

 

 

 

 

Characteristics

16TTS..S

 

Units

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IT(AV)

Sinusoidal

10

 

 

A

 

 

 

 

 

 

waveform

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IRMS

 

16

 

 

A

 

 

 

 

 

VRRM/ VDRM

up to 1600

 

 

V

 

 

 

 

 

ITSM

 

200

 

 

A

 

 

 

 

 

VT

@ 10 A, TJ = 25°C

1.4

 

V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

dv/dt

 

500

 

V/µs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

di/dt

 

150

 

A/µs

 

 

D2 PAK (SMD-220)

 

 

 

 

 

 

 

 

 

 

TJ

 

- 40 to 125

 

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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16TTS.. S SAFEIR Series

Bulletin I2105 rev. D 12/98

Voltage Ratings

 

VRRM, maximum

VDRM , maximum

IRRM/IDRM

Part Number

peak reverse voltage

peak direct voltage

125°C

 

V

V

mA

 

 

 

 

16TTS08S

800

800

10

 

 

 

 

16TTS12S

1200

1200

 

 

 

 

 

16TTS16S

1600

1600

 

 

 

 

 

Absolute Maximum Ratings

 

Parameters

16TTS..S

Units

 

 

Conditions

 

 

 

 

 

 

 

 

IT(AV)

Max. Average On-state Current

10

 

A

@TC = 98° C, 180° conduction half sine wave

IRMS

Max. RMS On-state Current

16

 

 

 

 

 

I

Max.PeakOneCycleNon-Repetitive

170

 

10ms Sine pulse, rated VRRMapplied

TSM

 

 

 

 

 

 

 

 

 

Surge Current

200

 

10msSine pulse,novoltagereapplied

 

 

 

 

 

 

 

I2t

Max. I2t for fusing

144

A2s

10ms Sine pulse, rated VRRMapplied

 

 

200

 

10msSinepulse,novoltagereapplied

 

 

 

 

 

 

 

I2Öt

Max. I2Öt for fusing

2000

A2Ös

t = 0.1 to 10ms, no voltage reapplied

 

 

 

 

 

 

 

 

VTM

Max. On-state Voltage Drop

1.4

 

V

@ 10A, TJ = 25°C

rt

On-state slope resistance

24.0

mW

TJ =

125°C

VT(TO)

Threshold Voltage

1.1

 

V

 

 

 

IRM/IDM Max.Reverse and Direct

0.5

 

mA

TJ =

25 °C

VR = rated VRRM/ VDRM

 

Leakage Current

10

 

 

TJ = 125 °C

 

 

 

 

 

 

 

 

 

 

 

 

IH

Holding Current

Typ.

 

Max.

 

Anode Supply = 6V, Resistive load, Initial IT=1A

 

 

--

 

100

mA

16TTS08S, 16TTS12S

 

 

 

 

 

 

 

 

 

100

 

150

 

16TTS16S

 

 

 

 

 

 

IL

Max. Latching Current

200

mA

Anode Supply = 6V, Resistive load

dv/dt

Max. Rate of Rise of off-state Voltage

500

V/µs

 

 

 

 

 

 

 

 

 

 

 

di/dt

Max. Rate of Rise of turned-on Current

150

A/µs

 

 

 

 

 

 

 

 

 

 

 

 

2

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16TTS.. S SAFEIR Series

 

 

 

 

 

 

Bulletin I2105 rev. D 12/98

 

 

 

 

 

 

Triggering

 

 

 

 

 

 

 

 

 

 

 

 

Parameters

16TTS..S

Units

Conditions

 

PGM

Max. peak Gate Power

8.0

W

 

 

PG(AV) Max. average Gate Power

2.0

 

 

 

+ IGM Max. paek positive Gate Current

1.5

A

 

 

 

 

 

 

 

 

- VGM Max. paek negative Gate Voltage

10

V

 

 

 

 

 

 

 

 

 

IGT

Max. required DC Gate Current

90

mA

Anode supply = 6V, resistive load, TJ = - 10°C

 

 

to trigger

60

 

Anode supply = 6V, resistive load, TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

35

 

Anode supply = 6V, resistive load, TJ = 125°C

 

 

 

 

 

 

 

 

VGT

Max. required DC Gate Voltage

3.0

V

Anode supply = 6V, resistive load, TJ = - 10°C

 

 

to trigger

2.0

 

Anode supply = 6V, resistive load, TJ = 25°C

 

 

 

 

 

 

 

 

 

 

 

1.0

 

Anode supply = 6V, resistive load, TJ = 125°C

 

 

 

 

 

 

 

 

VGD

Max. DC Gate Voltage not to trigger

0.25

 

TJ = 125°C, V DRM = rated value

 

IGD

Max. DC Gate Current not to trigger

2.0

mA

TJ = 125°C, V DRM = rated value

Switching

 

 

 

 

 

 

 

 

 

 

 

 

Parameters

16TTS..S

Units

Conditions

 

tgt

Typical turn-on time

0.9

µs

TJ = 25°C

 

trr

Typical reverse recovery time

4

 

TJ = 125°C

 

tq

Typical turn-off time

110

 

 

Thermal-Mechanical Specifications

 

 

 

 

 

 

 

 

 

 

 

 

Parameters

16TTS..S

Units

Conditions

 

 

 

 

 

 

 

 

TJ

 

Max. Junction Temperature Range

- 40 to 125

°C

 

 

Tstg

 

Max. Storage Temperature Range

- 40 to 125

°C

 

 

 

 

Soldering Temperature

240

°C

for 10 seconds (1.6mm from case)

 

 

 

 

 

 

 

 

RthJC

 

Max. Thermal Resistance Junction

1.3

°C/W

DC operation

 

 

 

to Case

 

 

 

 

RthJA

 

Typ. Thermal Resistance Junction

40

°C/W

 

 

 

 

to Ambient (PCB Mount)**

 

 

 

 

 

 

 

 

 

 

 

wt

 

Approximate Weight

2 (0.07)

g (oz.)

 

 

 

 

 

 

 

 

 

T

 

Case Style

D2 Pak (SMD-220)

 

**When mounted on 1" square (650mm2) PCB of FR-4 or G-10 material 4 oz (140µm) copper 40°C/W For recommended footprint and soldering techniques refer to application note #AN-994

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