Vishay 16TTS..PbF High Voltage Series Data Sheet

16TTS..PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 10 A

DESCRIPTION/FEATURES

The 16TTS..PbF High Voltage Series of silicon

(A)

2

controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology

TO-220AB

(G) 3

used has reliable operation up to 125 °C junction
temperature.

1 (K)

Typical applications are in input rectification (soft start) and

PRODUCT SUMMARY

VT at 10 A < 1.4 V

I

TSM

V

RRM

200 A

800/1200 V

these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C,

A

13.5 17 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

RMS

V

DRM/VRRM

I

TSM

V

T

dV/dt 500 V/µs

dI/dt 150 A/µs

T

J

Note

(1)

For higher voltage up to 1600 V contact factory

Sinusoidal waveform 10

16

(1)

Range

10 A, TJ = 25 °C 1.4 V

Range - 40 to 125 °C

800/1200 V

200 A

A

Available

RoHS*

COMPLIANT

VOLTAGE RATINGS

V

, MAXIMUM PEAK

PART NUMBER

16TTS08PbF 800 800

16TTS12PbF 1200 1200

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94603 For technical questions, contact: [e-mail]
Revision: 15-Sep-08 1

RRM

REVERSE VOLTAGE

V

V

, MAXIMUM PEAK

DRM

DIRECT VOLTAGE

V

I

RRM/IDRM

AT 125 °C

mA

10

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16TTS..PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 10 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS

Maximum average on-state current I

Maximum RMS on-state current I

Maximum peak, one-cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2000 A2√s

Maximum on-state voltage drop V

On-state slope resistance r

Threshold voltage V

Maximum reverse and direct leakage current I

RM/IDM

Holding current I

Maximum latching current I

T(AV)

RMS

I

TSM

TM

t

T(TO)

H

L

TC = 98 °C, 180° conduction, half sine wave 10

16

10 ms sine pulse, rated V

applied 170

RRM

10 ms sine pulse, no voltage reapplied 200

10 ms sine pulse, rated V

applied 144

RRM

10 ms sine pulse, no voltage reapplied 200

10 A, TJ = 25 °C 1.4 V

TJ = 125 °C

TJ = 25 °C

T

= 125 °C 10

J

V

= Rated V

R

RRM/VDRM

Anode supply = 6 V, resistive load, initial IT = 1 A
16TTS08PbF, 16TTS12PbF

Anode supply = 6 V, resistive load 200

Maximum rate of rise of off-state voltage dV/dt 500 V/µs

Maximum rate of rise of turned-on current dI/dt 150 A/µs

VALUES

TYP. MAX.

24.0 mΩ

1.1 V

0.5

- 100

UNITS

A

2

A

s

mA

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current + I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

8.0

2.0

1.5 A

10 V

W

Anode supply = 6 V, resistive load, TJ = - 65 °C 90

Maximum required DC gate current to trigger I

GT

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

= 25 °C 60

J

= 125 °C 35

J

mA

Anode supply = 6 V, resistive load, TJ = - 65 °C 3.0

Maximum required DC gate
voltage to trigger

Maximum DC gate voltage not to trigger V

Maximum DC gate current not to trigger I

V

GT

GD

GD

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

TJ = 125 °C, V

= Rated value

DRM

= 25 °C 2.0

J

= 125 °C 1.0

J

V

0.2

2.0 mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical turn-on time t

Typical turn-off time t

gt

rr

q

TJ = 25 °C 0.9

TJ = 125 °C

4

110

µsTypical reverse recovery time t

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Document Number: 94603

2 Revision: 15-Sep-08

16TTS..PbF High Voltage Series

Phase Control SCR, 10 A

Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device Case style TO-220AB

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

R

thJC

R

thJA

R

thCS

DC operation 1.3

Mounting surface, smooth and greased 0.5

- 40 to 125 °C

62

2g

0.07 oz.

16TTS08

16TTS12

°C/W

kgf · cm

(lbf · in)

Document Number: 94603 For technical questions, contact: [e-mail]
Revision: 15-Sep-08 3

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16TTS..PbF High Voltage Series

Vishay High Power Products

125

120

115

110

105

100

95

90

024681012

Maximum Allowable Case Temperature (°C)

Fig. 1 - Current Rating Characteristics

125

120

115

110

16TTS.. Series
R (DC) = 1.3 °C/ W

thJC

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

16TTS.. Serie s
R (DC) = 1.3 °C/ W

thJC

Conduction Period

Phase Control SCR, 10 A

180°

25

DC
180°
120°

20

90°

60°

30°

15

RM S Li m i t

10

Cond uction Period

5

0

Maximum Average On-state Power Loss (W)

0 2 4 6 8 1012141618

Average On-state Current (A)

16TTS.. Series
T = 12 5 ° C

J

Fig. 4 - On-State Power Loss Characteristics

180

At Any Rated Load Cond ition And With

Rated V App lied Following Surge.

RRM

160

140

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

105

100

95

90

0246810121416

Maximum Allowable Case Temperature (°C)

30°

60°

90°

120°

180°

Average On-state Current (A)

Fig. 2 - Current Rating Characteristics

18

180°

16

120°

90°

14

60°
30°

12

RM S Lim it

10

8

6

4

2

0

Maximum Average On-state Power Loss (W)

01234567891011

Average On-state Current (A)

Conduc tion Angle

16TTS.. Serie s
T = 12 5° C

J

Fig. 3 - On-State Power Loss Characteristics

DC

120

100

16TTS..Series

Peak Half Sine Wave On -stat e Current (A)

80

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

200

Maximum Non Repetitive Surge Current

180

160

140

120

100

16TTS.. Series

Peak Half Sin e Wav e Forward Curren t (A )

80

0.01 0.1 1

Versus Pulse Train Dura tion .

Pulse Train Duration (s)

Initial T = 125°C

No Vo ltag e Reap plied
Ra t e d V Re a p p li e d

RRM

J

Fig. 6 - Maximum Non-Repetitive Surge Current

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Document Number: 94603

4 Revision: 15-Sep-08

16TTS..PbF High Voltage Series

Phase Control SCR, 10 A

1000

16TTS.. Serie s

100

10

T = 25 ° C

J

T = 125°C

J

Instantaneous On-state Current (A)

1

012345

Instantaneous On-state Voltage (V)

Vishay High Power Products

Fig. 7 - On-State Voltage Drop Characteristics

10

thJC

1

D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08

0.1
Si n g le P ul se

Steady State Value

(DC Operation)

16TTS.. Series

0.01

Transient Thermal Impedance Z (°C/W)

0.0001 0.001 0.01 0.1 1 10

Squ a re Wave Pulse Dura tio n ( s)

Fig. 8 - Thermal Impedance Z

100

Rec tangular gate pulse
a)Recommended load line for

ra ted di /d t: 10 V, 20 o hms
tr = 0.5 µs, tp >= 6 µs

b)Recommended load line for

<= 30% rate d di/ dt : 10 V, 65 o hm s

10

tr = 1 µs, tp >= 6 µs

(b)

T
J = 25 °C

1

VGD

Instantaneous Gate Voltage (V)

0.1

IGD

0.001 0.01 0.1 1 10 100

TJ = 1 2 5 ° C

1 6TTS. . Se ri e s

Instantaneous Gate Current (A)

(a)

TJ = - 1 0 ° C

Characteristics

thJC

(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, t p = 2 ms
(3) PGM = 8 W, t p = 5 ms
(4) PGM = 4 W, t p = 10 ms

(3)

(4)

Frequency Limited by PG(AV)

Fig. 9 - Gate Characteristics

(2)

(1)

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Revision: 15-Sep-08 5

16TTS..PbF High Voltage Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

16 T T S 12 PbF

1 - Current rating

2 - Circuit configuration:

3 - Package:

4

5

6

Phase Control SCR, 10 A

51324

T = Single thyristor

T = TO-220AB

- Type of silicon:

S = Converter grade

- Voltage code x 100 = V

-

None = Standard production
PbF = Lead (Pb)-free

RRM

6

08 = 800 V

12 = 1200 V

Note: For higher voltage up to 1600 V contact factory

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95222

Part marking information http://www.vishay.com/doc?95225

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6 Revision: 15-Sep-08

Document Number: 94603

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1

DIMENSIONS in millimeters and inches

Outline Dimensions

Vishay High Power Products

TO-220AB

A

Ø P

E

Q

D

D1

3241

(3)

CC

e1

b, b2

c

b1, b3

Section C - C and D - D

Detail B

(2)

L1

DD

L

2 x e

MM

0.015 ABC

c1

C

H1

C

Lead assignments

HEXFET

1. - Gate

2. - Drain

3. - Source

IGBTs, CoPAK

1. - Gate

2. - Collector

3. - Emitter

B

A

Seating plane

A1

A2

Diodes

1. - Anode/open

2. - Cathode

3. - Anode

A

A

Sheet 2

3 x b2 3 x b

E

H1

θ

View A - A

123

C

C

Detail B

D

Thermal pad

D2

E1

D

L1

SYMBOL

MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.

NOTES SYMBOL

MILLIMETERS INCHES

NOTES

A 3.56 4.82 0.140 0.190 D1 8.38 9.02 0.330 0.355
A1 0.51 1.40 0.020 0.055 D2 12.19 12.88 0.480 0.507
A2 2.04 2.92 0.080 0.115 E 9.66 10.66 0.380 0.420 3

b 0.38 1.01 0.015 0.040 E1 8.38 8.89 0.330 0.350
b1 0.38 0.96 0.015 0.038 4 e 2.54 BSC 0.100 BSC
b2 1.15 1.77 0.045 0.070 H1 5.85 6.86 0.230 0.270
b3 1.15 1.73 0.045 0.068 L 12.70 14.73 0.500 0.580

c 0.36 0.61 0.014 0.024 L1 - 6.35 - 0.250 2
c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
c2 0.31 1.14 0.012 0.045 Q 2.54 3.05 0.100 0.120

D 14.22 15.87 0.560 0.625 3 θ 90° to 93° 90° to 93°

Notes

(1)

Dimensioning and tolerancing per ASME Y14.5M-1994

(2)

Lead dimension and finish uncontrolled in L1

(3)

Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at

the outermost extremes of the plastic body

(4)

Dimension b1 and c1 apply to base metal only

(5)

Controlling dimensions: inches

Document Number: 95222 For technical questions concerning discrete products, contact: [e-mail]

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Revision: 11-Mar-08 For technical questions concerning module products, contact: [e-mail]

1

Assembly
lot code

xxxxxxxx

V P119X

AC

TO-220AB

Part number

Product version (optional):
P = Lead (Pb)-free
None = Standard
Date code:
Year 1 = 2001
Week 19
Line X

Part Marking Information

Vishay High Power Products

Example: This is a xxxxxxxx with
assembly lot code AC,
assembled on WW 19, 2001
in the assembly line “X”

Document Number: 95225 For technical questions concerning discrete products, contact: [e-mail]
Revision: 30-Oct-08 For technical questions concerning module products, contact: [e-mail]

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1