Vishay 16TTS..PbF High Voltage Series Data Sheet

16TTS..PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 10 A

DESCRIPTION/FEATURES

The 16TTS..PbF High Voltage Series of silicon

(A)

2

controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology

TO-220AB

(G) 3

used has reliable operation up to 125 °C junction
temperature.

1 (K)

Typical applications are in input rectification (soft start) and

PRODUCT SUMMARY

VT at 10 A < 1.4 V

I

TSM

V

RRM

200 A

800/1200 V

these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C,

A

13.5 17 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

RMS

V

DRM/VRRM

I

TSM

V

T

dV/dt 500 V/µs

dI/dt 150 A/µs

T

J

Note

(1)

For higher voltage up to 1600 V contact factory

Sinusoidal waveform 10

16

(1)

Range

10 A, TJ = 25 °C 1.4 V

Range - 40 to 125 °C

800/1200 V

200 A

A

Available

RoHS*

COMPLIANT

VOLTAGE RATINGS

V

, MAXIMUM PEAK

PART NUMBER

16TTS08PbF 800 800

16TTS12PbF 1200 1200

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94603 For technical questions, contact: [e-mail]
Revision: 15-Sep-08 1

RRM

REVERSE VOLTAGE

V

V

, MAXIMUM PEAK

DRM

DIRECT VOLTAGE

V

I

RRM/IDRM

AT 125 °C

mA

10

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16TTS..PbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 10 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS

Maximum average on-state current I

Maximum RMS on-state current I

Maximum peak, one-cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2000 A2√s

Maximum on-state voltage drop V

On-state slope resistance r

Threshold voltage V

Maximum reverse and direct leakage current I

RM/IDM

Holding current I

Maximum latching current I

T(AV)

RMS

I

TSM

TM

t

T(TO)

H

L

TC = 98 °C, 180° conduction, half sine wave 10

16

10 ms sine pulse, rated V

applied 170

RRM

10 ms sine pulse, no voltage reapplied 200

10 ms sine pulse, rated V

applied 144

RRM

10 ms sine pulse, no voltage reapplied 200

10 A, TJ = 25 °C 1.4 V

TJ = 125 °C

TJ = 25 °C

T

= 125 °C 10

J

V

= Rated V

R

RRM/VDRM

Anode supply = 6 V, resistive load, initial IT = 1 A
16TTS08PbF, 16TTS12PbF

Anode supply = 6 V, resistive load 200

Maximum rate of rise of off-state voltage dV/dt 500 V/µs

Maximum rate of rise of turned-on current dI/dt 150 A/µs

VALUES

TYP. MAX.

24.0 mΩ

1.1 V

0.5

- 100

UNITS

A

2

A

s

mA

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current + I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

8.0

2.0

1.5 A

10 V

W

Anode supply = 6 V, resistive load, TJ = - 65 °C 90

Maximum required DC gate current to trigger I

GT

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

= 25 °C 60

J

= 125 °C 35

J

mA

Anode supply = 6 V, resistive load, TJ = - 65 °C 3.0

Maximum required DC gate
voltage to trigger

Maximum DC gate voltage not to trigger V

Maximum DC gate current not to trigger I

V

GT

GD

GD

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

TJ = 125 °C, V

= Rated value

DRM

= 25 °C 2.0

J

= 125 °C 1.0

J

V

0.2

2.0 mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical turn-on time t

Typical turn-off time t

gt

rr

q

TJ = 25 °C 0.9

TJ = 125 °C

4

110

µsTypical reverse recovery time t

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Document Number: 94603

2 Revision: 15-Sep-08

16TTS..PbF High Voltage Series

Phase Control SCR, 10 A

Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device Case style TO-220AB

minimum 6 (5)

maximum 12 (10)

T

, T

J

Stg

R

thJC

R

thJA

R

thCS

DC operation 1.3

Mounting surface, smooth and greased 0.5

- 40 to 125 °C

62

2g

0.07 oz.

16TTS08

16TTS12

°C/W

kgf · cm

(lbf · in)

Document Number: 94603 For technical questions, contact: [e-mail]
Revision: 15-Sep-08 3

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