Vishay 16TTS..FPPbF High Voltage Series Data Sheet

TO-220AB FULL-PAK
PRODUCT SUMMARY
VT at 10 A 1.4 V
I
TSM
V
RRM
16TTS..FPPbF High Voltage Series
Phase Control SCR
TO-220AB FULL-PAK, 16 A
DESCRIPTION/FEATURES
2
(A)
1 (K)
(G) 3
200 A
800/1200 V
The 16TTS..FPPbF High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass passivation technology used has reliable operation up to 125 °C junction temperature.
Typical applications are in input rectification (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines. Fully isolated package (V approved
This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix).
= 2500 V
INS
) is UL E78996
RMS
Available
RoHS*
COMPLIANT
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T common heatsink of 1 °C/W
= 55 °C, TJ = 125 °C,
A
13.5 17 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
RMS
V
DRM/VRRM
I
TSM
V
T
dV/dt 500 V/µs
dI/dt 150 A/µs
T
J
Sinusoidal waveform 10
16
Range, for higher voltage up to 1600 V contact factory 800/1200 V
200 A
10 A, TJ = 25 °C 1.4 V
Range - 40 to 125 °C
A
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
16TTS08FPPbF 800 800
16TTS12FPPbF 1200 1200
REVERSE VOLTAGE
V
V
, MAXIMUM PEAK
DRM
DIRECT VOLTAGE
V
I
RRM/IDRM
AT 125 °C
mA
10
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94381 For technical questions, contact: diodes-tech@vishay.com Revision: 26-May-08 1
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16TTS..FPPbF High Voltage Series
Vishay High Power Products
Phase Control SCR
TO-220AB FULL-PAK, 16 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS
Maximum average on-state current I
Maximum RMS on-state current I
Maximum peak, one-cycle, non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 2000 A2√s
I
Maximum on-state voltage drop V
On-state slope resistance r
Threshold voltage V
Maximum reverse and direct leakage current I
RM/IDM
Holding current I
Maximum latching current I
T(AV)
RMS
TSM
TM
t
T(TO)
H
L
Tc = 95 °C, 180° conduction, half sine wave 10
16
10 ms sine pulse, rated V
applied 170
RRM
10 ms sine pulse, no voltage reapplied 200
10 ms sine pulse, rated V
applied 144
RRM
10 ms sine pulse, no voltage reapplied 200
10 A, TJ = 25 °C 1.4 V
TJ = 125 °C
TJ = 25 °C
T
= 125 °C 10
J
V
= Rated V
R
RRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A 16TTS08FP, 16TTS12FP
Anode supply = 6 V, resistive load 200 mA
Maximum rate of rise of off-state voltage dV/dt 500 V/µs
Maximum rate of rise of turned-on current dI/dt 150 A/µs
VALUES
TYP. MAX.
24.0 mΩ
1.1 V
0.5
- 100
UNITS
A
2
A
s
mA
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current + I
Maximum peak negative gate voltage - V
GM
G(AV)
GM
GM
8.0
2.0
1.5 A
10 V
W
Anode supply = 6 V, resistive load, TJ = - 10 °C 90
Maximum required DC gate current to trigger I
GT
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
= 25 °C 60
J
= 125 °C 35
J
mA
Anode supply = 6 V, resistive load, TJ = - 10 °C 3.0
Maximum required DC gate voltage to trigger
Maximum DC gate voltage not to trigger V
Maximum DC gate current not to trigger I
V
GT
GD
GD
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
TJ = 125 °C, V
= Rated value
DRM
= 25 °C 2.0
J
= 125 °C 1.0
J
V
0.2
2.0 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
Typical turn-off time t
gt
rr
q
TJ = 25 °C 0.9
TJ = 125 °C
4
110
µsTypical reverse recovery time t
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Document Number: 94381
2 Revision: 26-May-08
16TTS..FPPbF High Voltage Series
Phase Control SCR
Vishay High Power Products
TO-220AB FULL-PAK, 16 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case
Maximum thermal resistance, junction to ambient
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
Marking device Case style TO-220AB FULL-PAK (94/V0)
minimum 6 (5)
maximum 12 (10)
T
, T
J
Stg
R
thJC
R
thJA
R
thCS
DC operation 1.5
Mounting surface, smooth and greased 1.5
- 40 to 125 °C
62
2g
0.07 oz.
16TTS08FP
16TTS12FP
°C/W
kgf · cm (lbf · in)
Document Number: 94381 For technical questions, contact: diodes-tech@vishay.com Revision: 26-May-08 3
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16TTS..FPPbF High Voltage Series
Vishay High Power Products
130
120
110
100
90
80
Maximum Allowable Case Temperature (°C)
024681012
Fig. 1 - Current Rating Characteristics
130
120
110
16TTS..FP Series R (DC) = 1.5 °C/W
thJC
Conduc tion Angle
30°
60°
90°
120°
Average On-state Current (A)
16TTS..FP Series R ( DC) = 1.5 °C/ W
thJC
Conduc tion Period
Phase Control SCR
TO-220AB FULL-PAK, 16 A
180°
Maximum Average On-state Power Loss (W)
180
160
140
25
DC 180° 120°
20
15
10
90° 60° 30°
RM S Lim it
Conduction Period
5
0
0481216
Average On-state Current (A)
1 6TTS. . FP Se r i e s T = 1 25 ° C
J
Fig. 4 - On-State Power Loss Characteristics
At Any Rate d Load Cond ition And With
Rated V Applied Following Surge.
RRM
Init ia l T = 125°C
J
@ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
100
90
80
Maximum Allowable Case Temperature (°C)
0 2 4 6 8 10 12 14 16 18
30°
60°
90°
120°
180°
DC
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
18
16
14
12
10
Maximum Average On-state Power Loss (W)
180° 120°
90° 60° 30°
RM S Lim it
8
6
4
2
0
0 2 4 6 8 10 12
Average On-state Current (A)
Conduction Angle
16TTS..FP Se ries T = 125°C
J
Fig. 3 - On-State Power Loss Characteristics
120
100
16TTS..FP Series
Peak Half Sine Wave On-state Current (A)
80
110100
Number Of Equa l Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
200
Maximum Non Repetitive Surge C urre nt
180
160
140
120
100
16TTS..FP Series
Pea k Ha lf Sine Wave Forward Current (A)
80
0.01 0.1 1
Versus Pulse Train Duration.
Pulse Tra in Du ra t io n ( s)
Init ia l T = 125°C
No Voltage Reapplied Rated V Reapplied
RRM
J
Fig. 6 - Maximum Non-Repetitive Surge Current
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Document Number: 94381
4 Revision: 26-May-08
16TTS..FPPbF High Voltage Series
Phase Control SCR
Vishay High Power Products
TO-220AB FULL-PAK, 16 A
1000
Insta nt an eous On-sta te Current (A)
10
thJC
1
D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08
0.1
1 6 TTS. . FP Se r i e s
100
10
1
012345
In st a n t a ne o us O n - st a t e V o lt a g e ( V )
T = 2 5 ° C
J
T = 1 25 °C
J
Fig. 7 - On-State Voltage Drop Characteristics
Sing le Pulse
1 6 TTS.. FP Se r i e s
Steady State Value (DC Operation)
Transient Thermal Impedance Z (°C/W)
0.01
0.0001 0.001 0.01 0.1 1 10
Fig. 8 - Thermal impedance Z
100
Rectangular gate pulse a)Recommended load line for
rated di/dt: 10 V, 20 ohms tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
10
tr = 1 µs, tp >= 6 µs
1
VGD
In st a n t a n e o u s Ga t e V ol t a g e ( V)
IG D
0.1
0.001 0.01 0.1 1 10 100
Sq u a r e W a v e Pu ls e D u ra t i o n ( s)
(a)
(b)
T
TJ = 25 °C
J = -1 0 °C
TJ = 12 5 ° C
1 6 TTS. . FP Se r ie s
In st a n t a n e o us G a t e Cu r r e n t ( A)
Characteristics
thJC
(1) PGM = 40 , tp = 1 ms (2) PGM = 20 W, tp = 2 ms (3) PGM = 8 W, tp = 5 ms (4) PGM = 4 W, tp = 10 ms
(3)
(4)
Fre q u en c y Li m it e d b y PG (A V)
(2)
(1)
Fig. 9 - Gate Characteristics
Document Number: 94381 For technical questions, contact: diodes-tech@vishay.com
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Revision: 26-May-08 5
16TTS..FPPbF High Voltage Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
16 T T S 12 FP PbF
1
- Current rating, RMS value
2
- Circuit configuration:
3
- Package:
4
- Type of silicon:
5
- Voltage code x 100 = V
6
- FULL-PAK
7
-
Phase Control SCR
TO-220AB FULL-PAK, 16 A
51324
T = Single thyristor
T = TO-220AB
S = Converter grade
None = Standard production
PbF = Lead (Pb)-free
67
RRM
08 = 800 V
12 = 1200 V
Note: For higher voltage up to 1600 V contact factory
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95072
Part marking information http://www.vishay.com/doc?95069
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 6 Revision: 26-May-08
Document Number: 94381
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com Revision: 18-Jul-08 1
DIMENSIONS in millimeters
Outline Dimensions
TO-220AB FULL-PAK
R 0.7 R 0.5
16.4
15.4
2.54 TYP.
(2 places)
10.6
10.4
0.9
0.7
2.54 TYP.
Hole Ø
3.7
3.2
3.4
3.1
2.8
2.6
7.1
6.7
16.0
15.8
10°
0.48
0.44
2.85
2.65
4.6
4.8
3.3
3.1
1.4
1.3
1.15
1.05
13.56
13.05
TYP.
5° ± 0.5°
5° ± 0.5°
Document Number: 95072 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 03-Dec-08 For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1
Assembly lot code
xxxxxxxFP
V P119XA
89
17
Part Marking Information
TO-220AB FULL-PAK
Example: This is a xxxxxxxFP with assembly lot code 1789, child lot A, assembled on WW 19, 2001
Part number FP = FULL-PAK
Product version (optional): P = Lead (Pb)-free None = Standard Date code: Year 1 = 2001 Week 19 Line X Child lot A
in the assembly line “X”
Document Number: 95069 For technical questions concerning discrete products, contact: diodes-tech@vishay.com Revision: 11-Jun-08 For technical questions concerning module products, contact: ind-modules@vishay.com
www.vishay.com
1
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