Vishay 16RIA Series Data Sheet

TO-208AA (TO-48)

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 16 A

FEATURES

• Improved glass passivation for high reliability
and exceptional stability at high temperature

• High dI/dt and dV/dt capabilities

• Standard package

• Low thermal resistance

• Metric threads version available

• Types up to 1200 V V

• RoHS compliant

• Designed and qualified for industrial and consumer level

TYPICAL APPLICATIONS

16RIA Series

RoHS

COMPLIANT

DRM/VRRM

PRODUCT SUMMARY

I

T(AV)

16 A

• Medium power switching

• Phase control applications

• Can be supplied to meet stringent military, aerospace and
other high reliability requirements

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 340

60 Hz 360

50 Hz 574

60 Hz 524

Typical 110 µs

16 A

85 °C

35 A

A

A2s

100 to 1200 V

- 65 to 125 °C

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Revision: 19-Sep-08 1

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16RIA Series

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 16 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE
NUMBER

VOLTAGE

CODE

V

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

(1)

10 100 150

20 200 300

40 400 500

16RIA

60 600 700

80 800 900

100 1000 1100

120 1200 1300

Notes

(1)

Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20 A/µs

(2)

For voltage pulses with tp ≤ 5 ms

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of
on-state slope resistance

High level value of
on-state slope resistance

Maximum on-state voltage V

Maximum holding current I

Latching current I

I

T(AV)

T(RMS)

180° sinusoidal conduction

35 A

t = 10 ms

I

TSM

t = 8.3 ms 360

t = 10 ms

t = 8.3 ms 300

t = 10 ms

t = 8.3 ms 524

t = 10 ms

t = 8.3 ms 375

t = 0.1 to 10 ms, no voltage reapplied,

= TJ maximum

T

J

T(TO)1

T(TO)2

r

t1

r

t2

TM

H

L

(16.7 % x π x I
T

= TJ maximum

J

(I > π x I

T(AV)

(16.7 % x π x I
T

= TJ maximum

J

(I > π x I

T(AV)

Ipk = 50 A, TJ = 25 °C 1.75 V

TJ = 25 °C, anode supply 6 V, resistive load

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

(2)

AT T

V

16 A

85 °C

No voltage

340

reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

Sinusoidal
half wave,
initial T

=

J

maximum

T

J

285

574

405

reapplied

5740 A

T(AV)

< I < π x I

T(AV)

),

0.97

), TJ = TJ maximum 1.24

T(AV)

< I < π x I

T(AV)

),

17.9

), TJ = TJ maximum 13.6

130

200

I

DRM/IRRM

= TJ MAXIMUM

J

mA

20

10

MAXIMUM

A

A

2

V

mΩ

mA

2

s

√s

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Document Number: 93695

2 Revision: 19-Sep-08

16RIA Series

Medium Power Thyristors

Vishay High Power Products

(Stud Version), 16 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

≤ 600 V

V

DRM

≤ 800 V 180

V

Maximum rate of rise
of turned-on current

DRM

V

≤ 1000 V 160

DRM

V

≤ 1600 V 150

DRM

Typical turn-on time t

Typical reverse recovery time t

Typical turn-off time t

dI/dt

gt

rr

q

= TJ maximum, VDM = Rated V

T

J

DRM

Gate pulse = 20 V, 15 Ω, tp = 6 µs, tr = 0.1 µs maximum
I

= (2 x rated dI/dt) A

TM

TJ = 25 °C,
at rated V

DRM/VRRM

, TJ = 125 °C

TJ = TJ maximum,

= I

I

TM

TJ = TJ maximum, ITM = I
dI/dt = - 10 A/µs, dV/dt = 20 V/µs linear to 67 % V

, tp > 200 µs, dI/dt = - 10 A/µs

T(AV)

T(AV)

, tp > 200 µs, VR = 100 V,

DRM

gate bias 0 V to 100 W

Note

•t

= 10 µs up to 600 V, tq = 30 µs up to 1600 V available on special request

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

T

= TJ maximum linear to 100 % rated V

Maximum critical rate of rise
of off-state voltage

dV/dt

J

= TJ maximum linear to 67 % rated V

T

J

Note

(1)

Available with: dV/dt = 1000 V/µs, to complete code add S90 i.e. 16RIA120S90

DRM

DRM

200

0.9

4

,

110

100

(1)

300

A/µs

µs

V/µs

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak negative gate voltage -V

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GT

GT

GD

GD

TJ = TJ maximum

TJ = TJ maximum 1.5 A

TJ = TJ maximum 10 V

TJ = - 65 °C

= 25 °C 60

J

= 125 °C 35

T

J

Maximum required gate trigger
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied

TJ = - 65 °C 3.0

= 25 °C 2.0

T

J

= 125 °C 1.0

T

J

TJ = TJ maximum, V

= Rated value 2.0 mA

DRM

Maximum gate current/voltage

TJ = TJ maximum,
V

= Rated value

DRM

not to trigger is the maximum
value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

8.0

2.0

90

mAT

0.2 V

W

V

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Revision: 19-Sep-08 3

16RIA Series

Vishay High Power Products

Medium Power Thyristors

(Stud Version), 16 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
and storage temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Mounting torque

Approximate weight

Case style See dimensions - link at the end of datasheet TO-208AA (TO-48)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180°

120°

90°

60°

30°

Note

• The table above shows the increment of thermal resistance R

T

, T

J

Stg

R

thJC

R

thCS

DC operation 0.86

Mounting surface, smooth, flat and greased 0.35

Lubricated threads
(Non-lubricated threads)

0.21 0.15

0.25 0.25

0.31 0.34

0.45 0.47

0.76 0.76

when devices operate at different conduction angles than DC

thJC

- 65 to 125 °C

TO NUT TO DEVICE

20 (27.5) 25 lbf ⋅ in

0.23 (0.32) 0.29 kgf · m

2.3 (3.1) 2.8 N · m

14 g

0.49 oz.

T

= TJ maximum K/W

J

K/W

130

120

110

100

90

80

70

60

Maxi mu m Allo wabl e Case Temperature (°C)

50

0 5 10 15 20 25

16RIA Series
R (DC) = 1 .15 K/W

thJC

Conduction Angl e

30°

60°

90°

120°

Average On-state Current (A)

180°

130

120

110

100

90

80

70

60

Maximum All owable Case Temperature (°C)

50

010203040

16RIA Series
R (DC) = 1.15 K/W

thJC

Conduction Per iod

30°

60°

90°

120°

180°

Average On-state Current (A)

DC

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

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16RIA Series

Medium Power Thyristors

(Stud Version), 16 A

45

40

35

30

25

20

15

10

Maximum Average On-state Power Loss (W)

45

40

35

30

25

20

15

10

Maximum Average On-state Power Loss (W)

180°
120°

90°
60°
30°

RMS Limi t

Conducti on Angle

16RIA Series
T = 125°C

5

0

0 5 10 15 20 25

J

Average On-state Current (A)

Fig. 3 - On-State Power Loss Characteristics

DC
180°
120°

90°

60°

30°

RMS Limi t

Conducti on Period

16RIA Series

T = 125°C

5

0

0 4 8 1216202428

Average On-state Current (A)

J

Vishay High Power Products

R

t

h

S

A

2

K

3

K

/

W

4

K

/

W

5

K

/

W

7

K

/

W

1

0

K

/

W

0255075100125

Maximum Allowable Ambient Temperature (°C)

2

K

3

K

/

W

4

K

/

W

5

K

/

W

7K

/

W

1

0

K

/W

0255075100125

Maximu m All owa ble Ambi ent T emper atur e (°C)

=

0

/

W

/

W

.

1

K

/

W

­D

e

l

t

a

R

R

t

h

S

A

=

0

.

1

K

/

W

­D

e

l

t

a

R

Fig. 4 - On-State Power Loss Characteristics

300

280

260

At Any Rated Load Condition And With
Rated V Applied Following Surge.

RRM

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

240

220

200

180

16RIA Serie s

160

Peak Half Sine Wave On-state Current (A)

140

110100

Number Of Equal Amplitude Half Cycl e Curr ent Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

350

Maxi mum Non Repeti ti ve Surge Cur ren t

325

300

275

Versus Pulse Train Durati on. Control

Of Conduction May Not Be Maintained.

Initial T = 125°C

No Voltage Reapplied

Rated V Reappli ed

J

RRM

250

225

200

175

16RIA Series

150

Peak Half Sine Wave On-state Current (A)

125

0.01 0.1 1

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitive Surge Current

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16RIA Series

Vishay High Power Products

1000

Instantaneous On-state Current (A)

10

Stead y State Val ue

R = 1.15 K/W

thJC

thJC

(DC Operation)

1

Medium Power Thyristors

(Stud Version), 16 A

16RIA Series

100

10

1

0.5 1 1.5 2 2.5 3 3.5

Instantaneous On-state Voltage (V)

Fig. 7 - Forward Voltage Drop Characteristics

T = 25°C

J

T = 125°C

J

0.1

16RIA Ser ies

Transient Thermal Impedance Z (K/W)

0.01

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 10V, 20ohms

tr <=0.5 µs, tp >= 6 µs

b) Recommended load li ne for

<=30% rated di/dt : 10V, 65ohms

10

tr<=1 µs, tp >= 6 µs

(b)

Tj = 25 °C

1

VGD

Instantaneous Gate Voltage (V)

0.1

IGD

0.001 0.0 1 0.1 1 10 100

Tj = 125 °C

Instantaneous Gate Current (A)

(a)

Tj = -65 °C

16RIA Series Frequency Limited by PG(AV)

Characteristics

thJC

(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms

(1)

Fig. 9 - Gate Characteristics

(4)

(3)

(2)

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16RIA Series

Medium Power Thyristors

Vishay High Power Products

(Stud Version), 16 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95333

16 RIA 120 M S90

51324

1 - Current code

- Essential part number

2

- Voltage code x 10 = V

3

- None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A

4

M = Stud base TO-208AA (TO-48) M6 x 1

- Critical dV/dt:

5

None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)

LINKS TO RELATED DOCUMENTS

(see Voltage Ratings table)

RRM

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Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1

DIMENSIONS in millimeters (inches)

12.8 MAX.
(0.5 MAX.)

TO-208AA (TO-48)

Ø 1.7/1.8

(Ø 0.06/0.07)

30.2 MAX.

(0.18 MAX.)

22.2 MAX.

(0.87 MAX.)

Outline Dimensions

Vishay High Power Products

Ø 3.9/4.1

(Ø 0.15/0.16)

10.7/11.5

(0.42/0.45)

13.8/14.3

(0.54/0.56)

Across flats

1/4"-28UNF-2A

For metric device M6 x 1

Ø 15.5

(Ø 0.61)

45°

3.1/3.3

(0.12/0.13)

1.24/1.44
(0.04/0.05)

Document Number: 95333 For technical questions concerning discrete products, contact: [e-mail]
Revision: 07-Jul-08 For technical questions concerning module products, contact: [e-mail]

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1