Vishay 16CTT100 Data Sheet

Anode
TO-220AB
PRODUCT SUMMARY
I
F(AV)
V
R
V
at 8 A at 125 °C 0.58 V
F
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 8 A
FEATURES
• 175 °C high performance Schottky diode
Base
common
2
cathode
Anode
2
Common
13
cathode
2 x 8 A
100 V
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
vs. IR trade off for high efficiency
F
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
16CTT100
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
V
T
RRM
F
J
8 Apk, TJ = 125 °C (typical, per leg) 0.55
Range - 55 to 175 °C
100
V
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS 16CTT100 UNITS
Maximum DC reverse voltage V
TJ = 25 °C 100 V
R
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
Maximum peak one cycle non-repetitive surge current per leg
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per leg
per device 16
I
F(AV)
I
FSM
AS
AR
50 % duty cycle at TC = 163 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 210
TJ = 25 °C, IAS = 1.5 A, L = 60 mH 67 mJ
Limited by frequency of operation and time pulse duration so
< TJ max. IAS at TJ max. as a function of time pulse
that T
J
See fig. 8
Following any rated load condition and with rated V
applied
RRM
T
8
850
I
AS
max.
J
at
A
A
Document Number: 94530 For technical questions, contact: diodes-tech@vishay.com Revision: 08-Sep-08 1
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16CTT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 2 x 8 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
8 A
Forward voltage drop per leg V
FM
(1)
8 A
16 A - 0.85
16 A - 0.69
Reverse leakage current per leg I
Junction capacitance per leg C
Series inductance per leg L
RM
T
= 125 °C - 4 mA
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 520 - pF
T
Measured lead to lead 5 mm from package body 8.0 - nH
S
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
R
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage temperature range
Maximum thermal resistance, junction to case per leg
Maximum thermal resistance, junction to case per device
Typical thermal resistance, case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AB (JEDEC) 16CTT100
T
, T
J
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth and greased 0.5
-0.72
-0.58
-6A
- 10 000 V/µs
- 55 to 175 °C
2
1
°C/W
2g
0.07 oz.
kgf · cm
(lbf · in)
V
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Document Number: 94530
2 Revision: 08-Sep-08
16CTT100
100
Tj = 175°C
(A)
F
10
Instantaneous Forward Current - I
High Performance
Schottky Generation 5.0, 2 x 8 A
Tj = 125°C
Vishay High Power Products
100
175°C
10
(mA)
R
1
0.1
0.01
Reverse Current - I
0.001
0.0001 0 20406080100
Fig. 2 - Typical Values of Reverse Current vs.
1000
(pF)
T
150°C
125°C
100°C
75°C
50°C
25°C
Reverse Voltage - VR (V)
Reverse Voltage
Tj = 25°C
1
0.0 0.5 1.0 1.5 2.0
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
D = 0.5
1
D = 0.33
D = 0.25
0.1
0.01
D = 0.2
Thermal Impedance ZthJC (°C/W)
0.001 1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
Fig. 4 - Maximum Thermal Impedance Z
D = 0.75
Single Pulse
(Thermal Resistance)
t1, Rectangular Pulse Duration (Seconds)
100
Junction Capacitance - C
10
0 20 40 60 80 100 120
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Characteristics
thJC
Document Number: 94530 For technical questions, contact: diodes-tech@vishay.com
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Revision: 08-Sep-08 3
16CTT100
Vishay High Power Products
180
170
160
Square wave (D=0.50) 80% rated Vr applied
Allowable Case Temperature (°C)
see note (1)
150
0 2 4 6 8 10 12
Average Forward Current - IF
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
DC
1000
High Performance
Schottky Generation 5.0, 2 x 8 A
7
6
5
4
3
2
Average Power Loss - (Watts)
1
0
(A)
(AV)
Fig. 6 - Forward Power Loss Characteristics
180° 120°
90° 60° 30°
DC
024681012
Average Forward Current - IF
(AV)
(A)
Non-Repetitive Surge Current - IFSM(A)
100
10 100 1000 10000
Square Wave Pulse Duration - tp(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
) x R
REV
x VFM at (I
thJC
;
F(AV)
/D) (see fig. 6);
R
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Document Number: 94530
4 Revision: 08-Sep-08
16CTT100
High Performance
Vishay High Power Products
Schottky Generation 5.0, 2 x 8 A
100
Tj = 25°C
10
1
Avalanche Current (A)
0.1
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Tj = 125°C
Tj = 175°C
001011
Rectangular Pulse Duration ( μsec)
10
Avalanche Energy (mJ)
1
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Tj = 25°C
Tj = 125°C
Tj = 175°C
001011
Rectangular Pulse Duration ( μsec)
Document Number: 94530 For technical questions, contact: diodes-tech@vishay.com Revision: 08-Sep-08 5
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16CTT100
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
Tube standard pack quantity: 50 pieces
High Performance
Schottky Generation 5.0, 2 x 8 A
16 C T T 100
51324
- Current rating (16 A)
1
- Circuit configuration:
2
C = Common cathode
- Package:
3
T = TO-220
4 - T = Trench
5 - Voltage code (100 V)
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95222
Part marking information http://www.vishay.com/doc?95225
SPICE model http://www.vishay.com/doc?95229
www.vishay.com For technical questions, contact: diodes-tech@vishay.com 6 Revision: 08-Sep-08
Document Number: 94530
DIMENSIONS in millimeters and inches
13
2
D
D1
H1
Q
13
2
C
C
D
D
3 x b23 x b
(b, b2)
b1, b3
(H1)
D2
Detail B
C
A
B
L
e1
Lead tip
E
E2
Ø P
0.014 AB
M M
0.015 AB
MM
Seating
plane
c
A2
A1
A
A
A
Lead assignments
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
Conforms to JEDEC outline TO-220AB
(6)
(6)
(7)
(6)
(7)
e
2 x
L1
(2)
Detail B
Section C - C and D - D
View A - A
Base metal Plating
(4)
(4)
c1
c
(6)
Thermal pad
(E)
E1
(6)
Outline Dimensions
Vishay Semiconductors
TO-220AB
SYMBOL
A 4.25 4.65 0.167 0.183 E 10.11 10.51 0.398 0.414 3, 6 A1 1.14 1.40 0.045 0.055 E1 6.86 8.89 0.270 0.350 6 A2 2.56 2.92 0.101 0.115 E2 - 0.76 - 0.030 7
b 0.69 1.01 0.027 0.040 e 2.41 2.67 0.095 0.105 b1 0.38 0.97 0.015 0.038 4 e1 4.88 5.28 0.192 0.208 b2 1.20 1.73 0.047 0.068 H1 6.09 6.48 0.240 0.255 6, 7 b3 1.14 1.73 0.045 0.068 4 L 13.52 14.02 0.532 0.552
MILLIMETERS INCHES MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
c 0.36 0.61 0.014 0.024 L1 3.32 3.82 0.131 0.150 2 c1 0.36 0.56 0.014 0.022 4 Ø P 3.54 3.73 0.139 0.147
D 14.85 15.25 0.585 0.600 3 Q 2.60 3.00 0.102 0.118 D1 8.38 9.02 0.330 0.355 90° to 93° 90° to 93° D2 11.68 12.88 0.460 0.507 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body
(4)
Dimension b1, b3 and c1 apply to base metal only
(5)
Controlling dimensions: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2 and E1
Document Number: 95222 For technical questions within your region, please contact one of the following: www.vishay.com Revision: 08-Mar-11 DiodesAmericas@vishay.com
NOTES SYMBOL
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
(7)
(8)
Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline
MILLIMETERS INCHES
NOTES
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