TO-220AC
PRODUCT SUMMARY
I
F(AV)
V
R
V
at 15 A at 125 °C 0.67 V
F
Vishay High Power Products
High Performance
Schottky Generation 5.0, 15 A
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
vs. IR trade off for high efficiency
F
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
cathode
1
Cathode
Base
2
3
Anode
15 A
100 V
15TT100
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
V
T
RRM
F
J
15 Apk, TJ = 125 °C (typical) 0.63
Range - 55 to 175 °C
100
V
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS 15TT100 UNITS
Maximum DC reverse voltage V
TJ = 25 °C 100 V
R
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 144 °C, rectangular waveform 15
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 240
TJ = 25 °C, IAS = 1.1 A, L = 60 mH 36 mJ
AS
Limited by frequency of operation and time pulse duration so
that T
< TJ max. IAS at TJ max. as a function of time pulse
J
See fig. 8
Following any rated load
condition and with rated
V
applied
RRM
T
920
I
AS
max.
J
at
A
A
Document Number: 94560 For technical questions, contact: diodes-tech@vishay.com
Revision: 04-Aug-08 1
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15TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 15 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
15 A
Forward voltage drop V
FM
(1)
15 A
30 A - 0.92
30 A - 0.79
Reverse leakage current I
Junction capacitance C
Series inductance L
RM
T
= 125 °C - 5 mA
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 550 - pF
T
Measured lead to lead 5 mm from package body 8.0 - nH
S
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
R
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AC 15TT100
T
, T
J
Stg
R
DC operation 2.5
thJC
R
thCS
Mounting surface, smooth and greased 0.5
-0.81
-0.67
- 120 µA
- 10 000 V/µs
- 55 to 175 °C
°C/W
2g
0.07 oz.
kgf · cm
(lbf · in)
V
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Document Number: 94560
2 Revision: 04-Aug-08
15TT100
100
Tj = 175°C
(A)
F
10
Instantaneous Forward Current - I
Tj = 125°C
High Performance
Schottky Generation 5.0, 15 A
(mA)
R
0.01
Reverse Current - I
0.001
0.0001
1000
(pF)
T
Vishay High Power Products
100
10
0.1
175°C
150°C
1
020406080100120
125°C
100°C
75°C
50°C
25°C
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Tj = 25°C
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Forward Voltage Drop - VFM (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
10
D = 0.75
D = 0.5
1
(°C/W)
thJC
0.01
Thermal Impedance Z
0.001
D = 0.33
D = 0.25
D = 0.2
0.1
Single Pulse
(Thermal Resistance)
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00
t1, Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z
Junction Capacitance - C
100
0 20 40 60 80 100 120
Reverse Voltage - VR (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Characteristics
thJC
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Revision: 04-Aug-08 3
15TT100
Vishay High Power Products
180
160
140
Square wave (D=0.50)
120
80% rated Vr applied
Allowable Case Temperature (°C)
see note (1)
100
0 5 10 15 20 25
Average Forward Current - IF
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
DC
FSM(A)
High Performance
Schottky Generation 5.0, 15 A
Average Power Loss - (Watts)
(A)
(AV)
1000
15
12
9
6
3
0
180°
120°
90°
60°
30°
RMS Limit
0 5 10 15 20 25
Average Forward Current - IF
DC
(AV)
(A)
Fig. 6 - Forward Power Loss Characteristics
Non-Repetitive Surge Current - I
100
10 100 1000 10000
Square Wave Pulse Duration - tp(microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current
Note
(1)
Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated V
REV
F(AV)
) x R
REV
x VFM at (I
;
thJC
/D) (see fig. 6);
F(AV)
R
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Document Number: 94560
4 Revision: 04-Aug-08
15TT100
High Performance
Vishay High Power Products
Schottky Generation 5.0, 15 A
100
10
Tj = 125°C
1
Avalanche Current (A)
0.1
Fig. 8 - Reverse Bias Safe Operating Area (Avalanche Current vs. Rectangular Pulse Duration)
100
Tj = 175°C
Rectangular Pulse Duration ( μsec)
Tj = 25°C
001011
10
Avalanche Energy (mJ)
1
Fig. 9 - Reverse Bias Safe Operating Area (Avalanche Energy vs. Rectangular Pulse Duration)
Tj = 25°C
Tj = 125°C
Tj = 175°C
001011
Rectangular Pulse Duration ( μsec)
Document Number: 94560 For technical questions, contact: diodes-tech@vishay.com
Revision: 04-Aug-08 5
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15TT100
Vishay High Power Products
High Performance
Schottky Generation 5.0, 15 A
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95221
Part marking information http://www.vishay.com/doc?95224
15 T T 100
1324
1 - Current rating (15 A)
- Package:
2
T = TO-220
- T = Trench
3
4 - Voltage code (100 V)
Tube standard pack quantity: 50 pieces
LINKS TO RELATED DOCUMENTS
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6 Revision: 04-Aug-08
Document Number: 94560
DIMENSIONS in millimeters and inches
(6)
E
(7)
E2
Q
(6)
D
D1
13
L3
L4
2
A
Ø P
0.014 AB
Detail B
L
MM
C
(6)
H1
(7)
TO-220AC
B
Seating
plane
A
A
A1
Outline Dimensions
Vishay Semiconductors
123
DL1D
H1
θ
E
Thermal pad
D2 (6)
E1 (6)
2 x b2 2 x b
Lead assignments
Diodes
1 + 2 - Cathode
3 - Anode
CC
Detail B
Lead tip
SYMBOL
e1
MM
0.015 AB
c
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
A
A2
NOTES SYMBOL
View A - A
Conforms to JEDEC outline TO-220AC
MILLIMETERS INCHES
NOTES
A 4.25 4.65 0.167 0.183 E1 6.86 8.89 0.270 0.350 6
A1 1.14 1.40 0.045 0.055 E2 - 0.76 - 0.030 7
A2 2.56 2.92 0.101 0.115 e 2.41 2.67 0.095 0.105
b 0.69 1.01 0.027 0.040 e1 4.88 5.28 0.192 0.208
b1 0.38 0.97 0.015 0.038 4 H1 6.09 6.48 0.240 0.255 6, 7
b2 1.20 1.73 0.047 0.068 L 13.52 14.02 0.532 0.552
b3 1.14 1.73 0.045 0.068 4 L1 3.32 3.82 0.131 0.150 2
c 0.36 0.61 0.014 0.024 L3 1.78 2.13 0.070 0.084
c1 0.36 0.56 0.014 0.022 4 L4 0.76 1.27 0.030 0.050 2
D 14.85 15.25 0.585 0.600 3 Ø P 3.54 3.73 0.139 0.147
D1 8.38 9.02 0.330 0.355 Q 2.60 3.00 0.102 0.118
D2 11.68 12.88 0.460 0.507 6 90° to 93° 90° to 93°
E 10.11 10.51 0.398 0.414 3, 6
Notes
(1)
Dimensioning and tolerancing as per ASME Y14.5M-1994
(2)
Lead dimension and finish uncontrolled in L1
(3)
Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured
at the outermost extremes of the plastic body
(4)
Dimension b1, b3 and c1 apply to base metal only
(5)
Controlling dimension: inches
(6)
Thermal pad contour optional within dimensions E, H1, D2 and E1
(7)
Dimension E2 x H1 define a zone where stamping and singulation irregularities are allowed
(8)
Outline conforms to JEDEC TO-220, D2 (minimum) where dimensions are derived from the actual package outline
Document Number: 95221 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 07-Mar-11 DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
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