Vishay 15MQ040NTRPBF Data Sheet
SMA
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 3 A
Cathode Anode
3 A
40 V
VS-15MQ040NPbF
Vishay High Power Products
FEATURES
• Surface mountable
• Extremely low forward voltage
• Compact size
• Improved reverse blocking voltage capability
relative to other similar size Schottky
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
APPLICATIONS
• Switching power supplies
• Meter protection
• Reverse protection for power input to PC board circuits
• Battery isolation and charging
• Low threshold voltage diode
• Freewheeling or by-pass diode
• Low voltage clamp
DESCRIPTION
The VS-15MQ040NPbF Schottky rectifier is designed to be
used for low power applications where a reverse voltage of
40 V is encountered and surface mountable is required.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
I
FSM
V
T
RRM
F
J
DC 3 A
40 V
tp = 5 μs sine 330 A
2 Apk, TJ = 125 °C 0.43 V
Range - 40 to 150 °C
VOLTAGE RATINGS
PARAMETER SYMBOL VS-15MQ040NPbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
40 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
See fig. 4
Maximum peak one cycle
non-repetitive surge current
See fig. 6
Non-repetitive avalanche energy E
Repetitive avalanche current I
I
F(AV)
I
FSM
AS
AR
50 % duty cycle at TL = 105 °C, rectangular waveform
On PC board 9 mm
(0.013 mm thick copper pad area)
5 μs sine or 3 μs rect. pulse
10 ms sine or 6 ms rect. pulse 140
TJ = 25 °C, IAS = 1 A, L = 12 mH 6.0 mJ
Current decaying linearly to zero in 1 μs
Frequency limited by T
2
island
Following any rated
load condition and with
rated V
RRM
maximum VA = 1.5 x VR typical
J
2.1 A
330
A
applied
1.0 A
Document Number: 94141 For technical questions, contact: diodestech@vishay.com
Revision: 04-Mar-10 1
www.vishay.com
VS-15MQ040NPbF
Vishay High Power Products
Schottky Rectifier, 3 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop
See fig. 1
V
FM
2 A 0.49
(1)
1 A
2 A 0.43
Maximum reverse leakage current
See fig. 2
I
RM
Threshold voltage V
Forward slope resistance r
Typical junction capacitance C
Typical series inductance L
F(TO)
t
S
TJ = 25 °C
(1)
T
= 125 °C 20
J
TJ = TJ maximum
VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz 134 pF
T
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.42
0.34
0.5
0.26 V
64.6 mΩ
10 000 V/μs
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style SMA (similar D-64) V3F
Note
dP
(1)
------------dT
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
T
, T
J
Stg
R
thJA
DC operation 80 °C/W
- 40 to 150 °C
0.07 g
0.002 oz.
V
mA
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94141
2 Revision: 04-Mar-10
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