VS-15MQ040NPbF
Vishay High Power Products
Schottky Rectifier, 3 A
Cathode Anode
SMA
PRODUCT SUMMARY
IF(AV) |
3 A |
VR |
40 V |
FEATURES
• Surface mountable
• Extremely low forward voltage
• Compact size
•Improved reverse blocking voltage capability relative to other similar size Schottky
•Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C
•Compliant to RoHS directive 2002/95/EC
•Designed and qualified for industrial level
APPLICATIONS
•Switching power supplies
•Meter protection
•Reverse protection for power input to PC board circuits
•Battery isolation and charging
•Low threshold voltage diode
•Freewheeling or by-pass diode
•Low voltage clamp
DESCRIPTION
The VS-15MQ040NPbF Schottky rectifier is designed to be used for low power applications where a reverse voltage of 40 V is encountered and surface mountable is required.
MAJOR RATINGS AND CHARACTERISTICS |
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CHARACTERISTICS |
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VALUES |
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UNITS |
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IF(AV) |
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DC |
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3 |
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A |
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VRRM |
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40 |
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V |
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IFSM |
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tp = 5 μs sine |
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330 |
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A |
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VF |
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2 Apk, TJ = 125 °C |
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0.43 |
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V |
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TJ |
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Range |
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- 40 to 150 |
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°C |
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VOLTAGE RATINGS |
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PARAMETER |
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SYMBOL |
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VS-15MQ040NPbF |
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UNITS |
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Maximum DC reverse voltage |
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VR |
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40 |
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V |
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Maximum working peak reverse voltage |
VRWM |
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ABSOLUTE MAXIMUM RATINGS |
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PARAMETER |
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TEST CONDITIONS |
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Maximum average forward current |
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50 % duty cycle at TL = 105 °C, rectangular waveform |
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IF(AV) |
On PC board 9 mm2 island |
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2.1 |
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A |
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See fig. 4 |
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(0.013 mm thick copper pad area) |
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Maximum peak one cycle |
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5 μs sine or 3 μs rect. pulse |
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Following any rated |
330 |
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non-repetitive surge current |
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IFSM |
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load condition and with |
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A |
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10 ms sine or 6 ms rect. pulse |
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140 |
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See fig. 6 |
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rated VRRM applied |
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Non-repetitive avalanche energy |
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EAS |
TJ = 25 °C, IAS = 1 A, L = 12 mH |
6.0 |
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mJ |
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Repetitive avalanche current |
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IAR |
Current decaying linearly to zero in 1 μs |
1.0 |
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A |
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Frequency limited by TJ maximum VA = 1.5 x VR typical |
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Document Number: 94141 |
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For technical questions, contact: diodestech@vishay.com |
www.vishay.com |
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Revision: 04-Mar-10 |
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1 |
VS-15MQ040NPbF
Vishay High Power Products |
Schottky Rectifier, 3 A |
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ELECTRICAL SPECIFICATIONS |
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PARAMETER |
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TEST CONDITIONS |
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1 A |
TJ = 25 °C |
0.42 |
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Maximum forward voltage drop |
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VFM (1) |
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2 A |
0.49 |
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V |
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See fig. 1 |
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1 A |
TJ = 125 °C |
0.34 |
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2 A |
0.43 |
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Maximum reverse leakage current |
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IRM (1) |
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TJ = 25 °C |
VR = Rated VR |
0.5 |
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mA |
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See fig. 2 |
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TJ = 125 °C |
20 |
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Threshold voltage |
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VF(TO) |
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TJ = TJ maximum |
0.26 |
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V |
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Forward slope resistance |
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rt |
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64.6 |
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mΩ |
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Typical junction capacitance |
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CT |
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VR = 10 VDC, TJ = 25 °C, test signal = 1 MHz |
134 |
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pF |
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Typical series inductance |
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LS |
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Measured lead to lead 5 mm from package body |
2.0 |
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nH |
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Maximum voltage rate of change |
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dV/dt |
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Rated VR |
10 000 |
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V/μs |
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Note |
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(1) |
Pulse width < 300 μs, duty cycle < 2 % |
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THERMAL - MECHANICAL SPECIFICATIONS |
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PARAMETER |
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TEST CONDITIONS |
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UNITS |
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Maximum junction and storage |
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TJ (1), TStg |
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- 40 to 150 |
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°C |
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temperature range |
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Maximum thermal resistance, |
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RthJA |
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DC operation |
80 |
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°C/W |
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junction to ambient |
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Approximate weight |
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0.07 |
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g |
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0.002 |
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oz. |
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Marking device |
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Case style SMA (similar D-64) |
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V3F |
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Note |
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(1) |
dPtot |
1 |
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------------- |
< -------------- thermal runaway condition for a diode on its own heatsink |
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dTJ |
RthJA |
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www.vishay.com |
For technical questions, contact: diodestech@vishay.com |
Document Number: 94141 |
2 |
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Revision: 04-Mar-10 |