Vishay 12TTS08SPBF Data Sheet

D2PA K

PRODUCT SUMMARY

VT at 8 A < 1.2 V

I

TSM

V

RRM

12TTS08SPbF High Voltage Series

Phase Control SCR, 8 A

DESCRIPTION/FEATURES

The 12TTS08SPbF high voltage series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125 °C junction
temperature.

Typical applications are in input rectification and crow-bar
(soft start) and these products are designed to be used with
Vishay HPP input diodes, switches and output rectifiers
which are available in identical package outlines.

This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).

1

Anode

Base

cathode

4, 2

3

Anode

140 A

800 V

Vishay High Power Products

RoHS

COMPLIANT

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C,

A

13.5 17 A

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

V

RRM/VDRM

I

TSM

V

T

dV/dt 150 V/µs

dI/dt 100 A/µs

T

J

Sinusoidal waveform 8

12.5

800 V

140 A

8 A, TJ = 25 °C 1.2 V

Range - 40 to 125 °C

A

VOLTAGE RATINGS

, MAXIMUM PEAK

V

RRM

PART NUMBER

12TTS08SPbF 800 800 1.0

REVERSE VOLTAGE

V

V

, MAXIMUM PEAK

DRM

DIRECT VOLTAGE

V

I

RRM/IDRM

AT 125 °C

mA

Document Number: 94499 For technical questions, contact: [e-mail]
Revision: 06-Jun-08 1

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12TTS08SPbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 8 A

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current I

Maximum RMS on-state current I

Maximum peak one-cycle
non-repetitive surge current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C 1000 A2√s

Maximum on-state voltage drop V

On-state slope resistance r

Threshold voltage V

Maximum reverse and direct leakage current I

Typical holding current I

Maximum latching current I

Maximum rate of rise of off-state voltage dV/dt T

T(AV)

T(RMS)

I

TSM

TM

t

T(TO)

RM/IDM

H

L

TC = 108 °C, 180° conduction, half sine wave

12.5

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied, T

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied, T

applied, TJ = 125 °C 120

RRM

= 125 °C 140

J

applied, TJ = 125 °C 72

RRM

= 125 °C 100

J

8 A, TJ = 25 °C 1.2 V

TJ = 125 °C

TJ = 25 °C

= 125 °C 1.0

T

J

V

= Rated V

R

RRM/VDRM

Anode supply = 6 V, resistive load, initial IT = 1 A 30

Anode supply = 6 V, resistive load 50

= 25 °C 150 V/µs

J

Maximum rate of rise of turned-on current dI/dt 100 A/µs

8

16.2 mΩ

0.87 V

0.05

A

A

mA

2

s

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current + I

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

8.0

2.0

1.5 A

10 V

W

Anode supply = 6 V, resistive load, TJ = - 65 °C 20

Maximum required DC gate current to trigger I

GT

Anode supply = 6 V, resistive load, T

= 25 °C 15

J

= 125 °C 10

J

mAAnode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2
Maximum required DC gate
voltage to trigger

Maximum DC gate voltage not to trigger V

Maximum DC gate current not to trigger I

V

GT

Anode supply = 6 V, resistive load, T

Anode supply = 6 V, resistive load, T

GD

GD

TJ = 125 °C, V

= Rated value

DRM

= 25 °C 1

J

= 125 °C 0.7

J

V

0.2

0.1 mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Typical turn-on time t

Typical turn-off time t

gt

rr

q

TJ = 25 °C 0.8

TJ = 125 °C

3

100

µsTypical reverse recovery time t

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Document Number: 94499

2 Revision: 06-Jun-08

12TTS08SPbF High Voltage Series

Phase Control SCR, 8 A

Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
junction to ambient

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Marking device Case style D

minimum 6 (5)

maximum 12 (10)

, T

T

J

Stg

R

R

R

thJC

thJA

thCS

DC operation 1.5

Mounting surface, smooth and greased 0.5

2

PAK (SMD-220) 12TTS08S

- 40 to 125 °C

62

2g

0.07 oz.

°C/W

kgf ⋅ cm
(lbf ⋅ in)

Document Number: 94499 For technical questions, contact: [e-mail]
Revision: 06-Jun-08 3

www.vishay.com