D2PA K
PRODUCT SUMMARY
VT at 8 A < 1.2 V
I
TSM
V
RRM
12TTS08SPbF High Voltage Series
Phase Control SCR, 8 A
DESCRIPTION/FEATURES
The 12TTS08SPbF high voltage series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
used has reliable operation up to 125 °C junction
temperature.
Typical applications are in input rectification and crow-bar
(soft start) and these products are designed to be used with
Vishay HPP input diodes, switches and output rectifiers
which are available in identical package outlines.
This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).
1
Anode
Base
cathode
4, 2
3
Anode
140 A
800 V
Vishay High Power Products
RoHS
COMPLIANT
OUTPUT CURRENT IN TYPICAL APPLICATIONS
APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS
Capacitive input filter T
common heatsink of 1 °C/W
= 55 °C, TJ = 125 °C,
A
13.5 17 A
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
V
RRM/VDRM
I
TSM
V
T
dV/dt 150 V/µs
dI/dt 100 A/µs
T
J
Sinusoidal waveform 8
12.5
800 V
140 A
8 A, TJ = 25 °C 1.2 V
Range - 40 to 125 °C
A
VOLTAGE RATINGS
, MAXIMUM PEAK
V
RRM
PART NUMBER
12TTS08SPbF 800 800 1.0
REVERSE VOLTAGE
V
V
, MAXIMUM PEAK
DRM
DIRECT VOLTAGE
V
I
RRM/IDRM
AT 125 °C
mA
Document Number: 94499 For technical questions, contact: diodes-tech@vishay.com
Revision: 06-Jun-08 1
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12TTS08SPbF High Voltage Series
Vishay High Power Products
Phase Control SCR, 8 A
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current I
Maximum RMS on-state current I
Maximum peak one-cycle
non-repetitive surge current
Maximum I
Maximum I
2
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied, TJ = 125 °C 1000 A2√s
Maximum on-state voltage drop V
On-state slope resistance r
Threshold voltage V
Maximum reverse and direct leakage current I
Typical holding current I
Maximum latching current I
Maximum rate of rise of off-state voltage dV/dt T
T(AV)
T(RMS)
I
TSM
TM
t
T(TO)
RM/IDM
H
L
TC = 108 °C, 180° conduction, half sine wave
12.5
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied, T
10 ms sine pulse, rated V
10 ms sine pulse, no voltage reapplied, T
applied, TJ = 125 °C 120
RRM
= 125 °C 140
J
applied, TJ = 125 °C 72
RRM
= 125 °C 100
J
8 A, TJ = 25 °C 1.2 V
TJ = 125 °C
TJ = 25 °C
= 125 °C 1.0
T
J
V
= Rated V
R
RRM/VDRM
Anode supply = 6 V, resistive load, initial IT = 1 A 30
Anode supply = 6 V, resistive load 50
= 25 °C 150 V/µs
J
Maximum rate of rise of turned-on current dI/dt 100 A/µs
8
16.2 mΩ
0.87 V
0.05
A
A
mA
2
s
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current + I
Maximum peak negative gate voltage - V
GM
G(AV)
GM
GM
8.0
2.0
1.5 A
10 V
W
Anode supply = 6 V, resistive load, TJ = - 65 °C 20
Maximum required DC gate current to trigger I
GT
Anode supply = 6 V, resistive load, T
= 25 °C 15
J
= 125 °C 10
J
mAAnode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, TJ = - 65 °C 1.2
Maximum required DC gate
voltage to trigger
Maximum DC gate voltage not to trigger V
Maximum DC gate current not to trigger I
V
GT
Anode supply = 6 V, resistive load, T
Anode supply = 6 V, resistive load, T
GD
GD
TJ = 125 °C, V
= Rated value
DRM
= 25 °C 1
J
= 125 °C 0.7
J
V
0.2
0.1 mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Typical turn-on time t
Typical turn-off time t
gt
rr
q
TJ = 25 °C 0.8
TJ = 125 °C
3
100
µsTypical reverse recovery time t
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Document Number: 94499
2 Revision: 06-Jun-08
12TTS08SPbF High Voltage Series
Phase Control SCR, 8 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
junction to ambient
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device Case style D
minimum 6 (5)
maximum 12 (10)
, T
T
J
Stg
R
R
R
thJC
thJA
thCS
DC operation 1.5
Mounting surface, smooth and greased 0.5
2
PAK (SMD-220) 12TTS08S
- 40 to 125 °C
62
2g
0.07 oz.
°C/W
kgf ⋅ cm
(lbf ⋅ in)
Document Number: 94499 For technical questions, contact: diodes-tech@vishay.com
Revision: 06-Jun-08 3
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12TTS08SPbF High Voltage Series
Vishay High Power Products
125
120
115
110
105
100
Maximum Allowab le Case Temperature (°C)
0246810
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
125
120
115
12TTS08
R (DC) = 1.5 K/ W
thJC
30°
60°
90°
12TTS08
R (DC) = 1.5 K/ W
thJC
Cond uction An gle
120°
180°
Conduc tion Period
Phase Control SCR, 8 A
Maximum Average On-state Power Loss (W)
14
DC
180°
12
120°
90°
10
60°
30°
8
RM S Li m it
6
4
2
0
02468101214
Average On-st at e Current (A)
Conduct ion Pe riod
12TTS08
T = 125°C
J
Fig. 4 - On-State Power Loss Characteristics
130
At Any Rated Load Condition And With
Rated V Applied Following Surge.
120
110
100
RRM
Init ial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
110
105
100
Maximum Allowable Case Temperature (°C)
02468101214
30°
60°
90°
120°
180°
DC
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
10
9
8
7
6
5
4
3
2
1
0
Maximum Averag e On-sta te Power Loss (W)
0123456789
180°
120°
90°
60°
30°
RM S Lim i t
Conduction Angle
12TTS08
T = 1 25 ° C
J
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
90
80
70
12TTS08
Peak Half Sine Wave On-stat e Current (A)
60
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
150
Maximum Non Re petitive Surge Curren t
140
130
120
110
100
90
80
70
60
Pe ak Ha lf Sine Wave On-state Current (A)
50
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
12TTS08
0.01 0.1 1
Pu l se Tra in Du ra ti o n ( s)
Ini tia l T = 125° C
No Voltage Reapplied
Rated V Rea pp lied
J
RRM
Fig. 6 - Maximum Non-Repetitive Surge Current
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Document Number: 94499
4 Revision: 06-Jun-08
12TTS08SPbF High Voltage Series
Phase Control SCR, 8 A
1000
12TTS08
100
T = 25 ° C
10
Insta ntaneous On-state Current (A)
1
0.5 1 1.5 2 2.5 3 3.5
In st a n t a ne o u s On -st a t e V o lt a g e ( V)
J
T = 1 25 ° C
J
Vishay High Power Products
Fig. 7 - On-State Voltage Drop Characteristics
10
St e a d y St a t e V a l ue
thJC
1
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Si n g l e Pu ls e
(DC Operat ion)
12TTS08
Transient Thermal Impedance Z (°C/W)
0.01
0.0001 0.001 0.01 0.1 1
Sq uare Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
Characteristics
thJC
Document Number: 94499 For technical questions, contact: diodes-tech@vishay.com
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Revision: 06-Jun-08 5
12TTS08SPbF High Voltage Series
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
12 T T S 08 S TRL PbF
1
- Current rating (12.5 A)
2
- Circuit configuration:
3
- Package:
4
- Type of silicon:
5
- Voltage rating (08 = 800 V)
6
- S = TO-220 D2PAK (SMD-220) version
7
-
8
-
Phase Control SCR, 8 A
51324678
T = Single thyristor
T = TO-220AC
S = Standard recovery rectifier
None = Tube
TRL = Tape and reel (left oriented)
TRR = Tape and reel (right oriented)
None = Standard production
PbF = Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95046
Part marking information http://www.vishay.com/doc?95054
Packaging information http://www.vishay.com/doc?95032
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
6 Revision: 06-Jun-08
Document Number: 94499
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1
DIMENSIONS in millimeters and inches
Outline Dimensions
Vishay High Power Products
D2PAK
Conforms to JEDEC outline D
(2)(3)
E
(3)
L1
D
L2
2 x
Lead assignments
Diodes
1. - Anode (two die)/open (one die)
2., 4. - Cathode
3. - Anode
4
132
BB
e
2
H
2 x b2
2 x b
0.010
PAK (SMD-220)
A
Detail A
(2)
C
MM
A
Lead tip
B
A
c2
AA
A
c
M
± 0.004
B
Gauge
0° to 8°
plane
L3
B
L
L4
Detail “A”
Rotated 90 °CW
Scale: 8:1
(E)
E1
View A - A
A1
(3)
(D1)
17.90 (0.70)
15.00 (0.625)
2.32
(0.08)
Plating
Seating
plane
2.64 (0.103)
2.41 (0.096)
(3)
H
B
Pad layout
11.00
MIN.
(0.43)
MIN.
(4)
b1, b3
(c)
(b, b2)
Section B - B and C - C
Scale: None
9.65
(0.38)
3.81
(0.15)
c1
MIN.
MIN.
Base
Metal
(4)
SYMBOL
MILLIMETERS INCHES
MIN. MAX. MIN. MAX. MIN. MAX. MIN. MAX.
NOTES SYMBOL
MILLIMETERS INCHES
NOTES
A 4.06 4.83 0.160 0.190 D1 6.86 - 0.270 - 3
A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3
b 0.51 0.99 0.020 0.039 E1 6.22 - 0.245 - 3
b1 0.51 0.89 0.020 0.035 4 e 2.54 BSC 0.100 BSC
b2 1.14 1.78 0.045 0.070 H 14.61 15.88 0.575 0.625
b3 1.14 1.73 0.045 0.068 4 L 1.78 2.79 0.070 0.110
c 0.38 0.74 0.015 0.029 L1 - 1.65 - 0.066 3
c1 0.38 0.58 0.015 0.023 4 L2 1.27 1.78 0.050 0.070
c2 1.14 1.65 0.045 0.065 L3 0.25 BSC 0.010 BSC
D 8.51 9.65 0.335 0.380 2 L4 4.78 5.28 0.188 0.208
Notes
(1)
Dimensioning and tolerancing per ASME Y14.5 M-1994
(2)
Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outmost extremes of the plastic body
(3)
Thermal pad contour optional within dimension E, L1, D1 and E1
(4)
Dimension b1 and c1 apply to base metal only
(5)
Datum A and B to be determined at datum plane H
(6)
Controlling dimension: inch
(7)
Outline conforms to JEDEC outline TO-263AB
Document Number: 95046 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 05-Dec-08 For technical questions concerning module products, contact: ind-modules@vishay.com
1
D2PAK
Part Marking Information
Vishay High Power Products
Assembly
lot code
xxxxxxS
V PYWWXA
8024
Part number
Product version (optional):
P = Lead (Pb)-free
None = Standard
Date code:
Year 0 = 2000
Week 02
Line X
Child lot A
Example: This is a xxxxxxS with
assembly lot code 8024,
assembled on WW 02, 2000
Document Number: 95054 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 17-Oct-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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1
D2PAK
TAPE AND REEL INFORMATION in millimeters (inches)
P
2
Ø 1.55 ± 0.05
Ø 1.6 ± 0.1
R 0.3
TYP.
2.0 ± 0.1
Y
See note (5)
C
2.17 ± 0.1
P
0
4.0 ± 0.1
See note (1)
Packaging Information
Vishay High Power Products
C
1.75 ± 0.1
C
F
11.50 ± 0.1
1.57 ± 0.1
See note (5)
C
W
24.00 ± 0.3
Y
P
1
16.00 ± 0.1
0.35 ± 0.05
0.12 MAX.
C
L
1.20
K
0
4.90 ± 0.1
Section Y - Y
A
0
10.50 ± 0.1
2
B
10.25 ± 0.1
C
C
0
B
15.80 ± 0.1
C
Notes
(1)
10 sprocket hole pitch cumulative tolerance ± 0.02
(2)
Camber not to exceed 1 mm in 100 mm
(3)
Material: conductive black styrenic alloy
(4)
K0 measured from a plane on the inside bottom of the pocket to the top surface of the carrier
(5)
Measured from centerline of sprocket hole to centerline of pocket
(6)
Vendor: (optional)
(7)
Must also meet requirements of EIA standard # EIA-481A taping of surface mount components for automatic placement
(8)
Surface resistivity of molded material must measure less or equal to 106 Ω per square. Measured in accordance to procedure given in
ASTM D-257 and ASTM D-991
(9)
Total length per reel must be 45 m
(10)
critical
C
Document Number: 95032 For technical questions concerning discrete products, contact: diodes-tech@vishay.com
Revision: 17-Apr-08 For technical questions concerning module products, contact: ind-modules@vishay.com
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1
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