Vishay 12TTS08SPBF Data Sheet

12TTS08SPbF High Voltage Series

Vishay High Power Products

Phase Control SCR, 8 A

				Base
				cathode
					4, 2
D2PAK				1			3
		Anode			Anode
PRODUCT SUMMARY
VT at 8 A					< 1.2 V
ITSM					140 A
VRRM					800 V

DESCRIPTION/FEATURES

The 12TTS08SPbF high voltage series of silicon controlled rectifiers are specifically designed for

medium power switching and phase control RoHS applications. The glass passivation technology COMPLIANT used has reliable operation up to 125 °C junction temperature.

Typical applications are in input rectification and crow-bar (soft start) and these products are designed to be used with Vishay HPP input diodes, switches and output rectifiers which are available in identical package outlines.

This product has been designed and qualified for industrial level and lead (Pb)-free (“PbF” suffix).

OUTPUT CURRENT IN TYPICAL APPLICATIONS

	APPLICATIONS	SINGLE-PHASE BRIDGE	THREE-PHASE BRIDGE	UNITS
	Capacitive input filter TA = 55 °C, TJ = 125 °C,	13.5	17	A
	common heatsink of 1 °C/W

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER	TEST CONDITIONS	VALUES	UNITS
IT(AV)	Sinusoidal waveform	8	A
IT(RMS)		12.5
VRRM/VDRM		800	V
ITSM		140	A
VT	8 A, TJ = 25 °C	1.2	V
dV/dt		150	V/µs
dI/dt		100	A/µs
TJ	Range	- 40 to 125	°C

VOLTAGE RATINGS

	VRRM, MAXIMUM PEAK	VDRM, MAXIMUM PEAK	IRRM/IDRM
PART NUMBER	REVERSE VOLTAGE	DIRECT VOLTAGE	AT 125 °C
	V	V	mA
12TTS08SPbF	800	800	1.0

Document Number: 94499	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 06-Jun-08		1

12TTS08SPbF High Voltage Series

Vishay High Power Products Phase Control SCR, 8 A

ABSOLUTE MAXIMUM RATINGS
PARAMETER		SYMBOL		TEST CONDITIONS		VALUES	UNITS
Maximum average on-state current		IT(AV)	TC = 108 °C, 180° conduction, half sine wave			8
Maximum RMS on-state current		IT(RMS)				12.5	A
Maximum peak one-cycle		ITSM	10 ms sine pulse, rated VRRM applied, TJ = 125 °C			120
non-repetitive surge current			10 ms sine pulse, no voltage reapplied, TJ = 125 °C			140
Maximum I2t for fusing		I2t	10 ms sine pulse, rated VRRM applied, TJ = 125 °C			72	A2s
			10 ms sine pulse, no voltage reapplied, TJ = 125 °C			100
Maximum I2√t for fusing		I2√t	t = 0.1 to 10 ms, no voltage reapplied, T = 125 °C			1000	A2√s
				J
Maximum on-state voltage drop		VTM	8 A, TJ = 25 °C			1.2	V
On-state slope resistance		rt	TJ = 125 °C			16.2	mΩ
Threshold voltage		VT(TO)				0.87	V
Maximum reverse and direct leakage current		IRM/IDM	TJ = 25 °C	VR = Rated VRRM/VDRM		0.05
			TJ = 125 °C			1.0	mA
Typical holding current		IH	Anode supply = 6 V, resistive load, initial IT = 1 A			30
Maximum latching current		IL	Anode supply = 6 V, resistive load			50
Maximum rate of rise of off-state voltage		dV/dt	TJ = 25 °C			150	V/µs
Maximum rate of rise of turned-on current		dI/dt				100	A/µs
TRIGGERING
PARAMETER		SYMBOL		TEST CONDITIONS		VALUES	UNITS
Maximum peak gate power		PGM				8.0	W
Maximum average gate power		PG(AV)				2.0
Maximum peak positive gate current		+ IGM				1.5	A
Maximum peak negative gate voltage		- VGM				10	V
			Anode supply = 6 V, resistive load, TJ = - 65 °C			20
Maximum required DC gate current to trigger		IGT	Anode supply = 6 V, resistive load, TJ = 25 °C			15	mA
			Anode supply = 6 V, resistive load, TJ = 125 °C			10
			Anode supply = 6 V, resistive load, TJ = - 65 °C			1.2
Maximum required DC gate		VGT
			Anode supply = 6 V, resistive load, TJ = 25 °C			1
voltage to trigger							V
			Anode supply = 6 V, resistive load, TJ = 125 °C			0.7
Maximum DC gate voltage not to trigger		VGD	TJ = 125 °C, VDRM = Rated value			0.2
Maximum DC gate current not to trigger		IGD				0.1	mA
SWITCHING
PARAMETER		SYMBOL		TEST CONDITIONS		VALUES	UNITS
Typical turn-on time		tgt	TJ = 25 °C			0.8
Typical reverse recovery time		trr	TJ = 125 °C			3	µs
Typical turn-off time		tq				100
www.vishay.com	For technical questions, contact: [e-mail]				Document Number: 94499
2						Revision: 06-Jun-08

12TTS08SPbF High Voltage Series

Phase Control SCR, 8 A Vishay High Power Products

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER		SYMBOL	TEST CONDITIONS	VALUES	UNITS
Maximum junction and storage		TJ, TStg		- 40 to 125	°C
temperature range
Maximum thermal resistance,		RthJC	DC operation	1.5
junction to case
Maximum thermal resistance,		RthJA		62	°C/W
junction to ambient
Typical thermal resistance,		RthCS	Mounting surface, smooth and greased	0.5
case to heatsink
Approximate weight				2	g
				0.07	oz.
Mounting torque	minimum			6 (5)	kgf cm
	maximum			12 (10)	(lbf in)
Marking device			Case style D2PAK (SMD-220)	12TTS08S

Document Number: 94499	For technical questions, contact: [e-mail]	www.vishay.com
Revision: 06-Jun-08		3