Vishay 10ETS08PbF, 10ETS12PbF Data Sheet

Anode

1

2

3

Cathode

TO-220AC

Base

cathode

10ETS08PbF, 10ETS12PbF High Voltage Series

Vishay Semiconductors

Input Rectifier Diode, 10 A

FEATURES

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

APPLICATIONS

• Input rectification

• Vishay Semiconductors switches and output rectifiers
which are available in identical package outlines

PRODUCT SUMMARY

VF at 10 A < 1.1 V

I

FSM

V

RRM

200 A

800 V/1200 V

DESCRIPTION

The 10ETS..PbF rectifier series has been optimized for very
low forward voltage drop, with moderate leakage.

The glass passivation technology used has reliable
operation up to 150 °C junction temperature.

OUTPUT CURRENT IN TYPICAL APPLICATIONS

APPLICATIONS SINGLE-PHASE BRIDGE THREE-PHASE BRIDGE UNITS

Capacitive input filter T
common heatsink of 1 °C/W

= 55 °C, TJ = 125 °C

A

12.0 16.0 A

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

F(AV)

V

I

FSM

V

T

RRM

F

J

Sinusoidal waveform 10 A

800/1200 V

200 A

10 A, TJ = 25 °C 1.1 V

- 40 to 150 °C

VOLTAGE RATINGS

V

, MAXIMUM PEAK

PART NUMBER

10ETS08PbF 800 900

10ETS12PbF 1200 1300

RRM

REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT 150 °C

mA

0.5

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current I

Maximum peak one cycle
non-repetitive surge current

Maximum I

Maximum I

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 94337 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

2

t for fusing I2t

2

t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 1450 A2s

F(AV)

I

FSM

TC = 105 °C, 180° conduction half sine wave 10

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 200

10 ms sine pulse, rated V

10 ms sine pulse, no voltage reapplied 145

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applied 170

RRM

applied 130

RRM

A

2

A

s

10ETS08PbF, 10ETS12PbF High Voltage Series

Vishay Semiconductors

Input Rectifier Diode, 10 A

ELECTRICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum forward voltage drop V

Forward slope resistance r

Threshold voltage V

Maximum reverse leakage current I

FM

F(TO)

RM

10 A, TJ = 25 °C 1.1 V

t

TJ = 150 °C

TJ = 25 °C

T

= 150 °C 0.50

J

V

= Rated V

R

RRM

20 m

0.82 V

0.05

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, junction to ambient
(PCB mount)

Soldering temperature T

, T

J

Stg

DC operation 2.5

thJC

(1)

R

62

thJA

S

Approximate weight

Marking device Case style TO-220AC

Note

(1)

When mounted on 1" square (650 mm2) PCB of FR-4 or G-10 material 4 oz. (140 μm) copper 40 °C/W
For recommended footprint and soldering techniques refer to application note #AN-994

- 40 to 150 °C

240 °C

2g

0.07 oz.

10ETS08

10ETS12

mA

°C/W

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 94337
2 [e-mail]

, [e-mail], [e-mail] Revision: 22-Jul-10

90

150

140

130

120

110

100

4268

16

18

10 12 14

0

Maximum Allowable

Case Temperature (°C)

Average Forward Current (A)

DC

30°

60°

90°

120°

180°

10ETS.. Series
R

thJC

(DC) = 2.5 °C/W

Ø

Conduction period

10ETS08PbF, 10ETS12PbF High Voltage Series

150

140

130

120

110

100

Maximum Allowable

Case Temperature (°C)

90

80

0

2

Average Forward Current (A)

Fig. 1 - Current Rating Characteristics

Fig. 2 - Current Rating Characteristics

10ETS.. Series

R

(DC) = 2.5 °C/W

thJC

Conduction angle

60°

90°

30°

120°

468

Input Rectifier Diode, 10 A

Ø

180°

10

12

Vishay Semiconductors

20

18

16

14

12

10

Maximum Average

Forward Power Loss (W)

200

180

160

140

120

100

80

Forward Current (A)

Peak Half Sine Wave

60

40

DC
180°
120°

90°

60°

30°

8

6

4

2

0

02468

RMS limit

Conduction period

10ETS.. Series
T

J

Average Forward Current (A)

Fig. 4 - Forward Power Loss Characteristics

10ETS.. Series

1

At any rated load condition and with

rated V

applied following surge.

RRM

Initial TJ = 150 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10

Number of Equal Amplitude

Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Ø

= 150 °C

16141210

100

Maximum Average

Forward Power Loss (W)

Document Number: 94337 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 22-Jul-10 [e-mail]

16

14

12

10

180°
120°

90°
60°
30°

8

6

4

2

0

0

Fig. 3 - Forward Power Loss Characteristics

2468

Average Forward Current (A)

RMS limit

Ø

Conduction angle

10ETS.. Series

= 150 °C

T

J

240

220

200

180

160

140

120

100

Forward Current (A)

Peak Half Sine Wave

80

60

10

40

Maximum non-repetitive surge current

versus pulse train duration.

Initial T

No voltage reapplied

Rated V

10ETS.. Series

0.1 1.00.01

J

RRM

= 150 °C

reapplied

Pulse Train Duration (s)

Fig. 6 - Maximum Non-Repetitve Surge Current

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