Vishay 10BQ100PbF Data Sheet
SMB
PRODUCT SUMMARY
I
F(AV)
V
R
Schottky Rectifier, 1 A
Cathode Anode
1.0 A
100 V
10BQ100PbF
Vishay High Power Products
FEATURES
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION
The 10BQ100PbF surface mount Schottky rectifier has
been designed for applications requiring low forward drop
and very small foot prints on PC boards. Typical applications
are in disk drives, switching power supplies, converters,
freewheeling diodes, battery charging, and reverse battery
protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 1.0 A
100 V
tp = 5 µs sine 780 A
1.0 Apk, TJ = 125 °C 0.62 V
Range - 55 to 175 °C
VOLTAGE RATINGS
PARAMETER SYMBOL 10BQ100PbF UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
100 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Maximum peak one cycle
non-repetitive surge current
Non-repetitive avalanche energy E
Repetitive avalanche current I
F(AV)
I
FSM
AS
AR
50 % duty cycle at TL = 152 °C, rectangular waveform 1.0 A
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 38
TJ = 25 °C, IAS = 0.5 A, L = 8 mH 1.0 mJ
Current decaying linearly to zero in 1 µs
Frequency limited by T
maximum VA = 1.5 x VR typical
J
Following any rated
load condition and with
rated V
RRM
applied
780
0.5 A
A
Document Number: 94114 For technical questions, contact: diodestech@vishay.com
Revision: 06-Jul-09 1
www.vishay.com
10BQ100PbF
Vishay High Power Products
Schottky Rectifier, 1 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
1 A
Maximum forward voltage drop
See fig. 1
V
FM
2 A 0.89
(1)
1 A
2 A 0.72
Maximum reverse leakage current
See fig. 2
I
RM
Typical junction capacitance C
Typical series inductance L
T
S
TJ = 25 °C
(1)
T
= 125 °C 1
J
VR = 5 VDC, (test signal range 100 kHz to 1 MHz) 25 °C 42 pF
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of charge dV/dt Rated V
T
= 25 °C
J
= 125 °C
T
J
V
= Rated V
R
R
R
0.78
0.62
0.5
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to lead
Maximum thermal resistance,
junction to ambient
Approximate weight
Marking device Case style SMB (similar DO-214AA) V1J
Notes
dP
(1)
------------dT
(2)
Mounted 1" square PCB
1
tot
J
thermal runaway condition for a diode on its own heatsink
--------------<
R
thJA
(1)
, T
T
J
Stg
(2)
R
thJL
R
thJA
DC operation 36
- 55 to 175 °C
80
0.10 g
0.003 oz.
V
mA
°C/W
www.vishay.com For technical questions, contact: diodestech@vishay.com
Document Number: 94114
2 Revision: 06-Jul-09
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