UTRON UT62L6416MC-70LLE, UT62L6416MC-70LL, UT62L6416MC-70L, UT62L6416MC-70LE, UT62L6416MC-55LLE Datasheet

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A

A0 A1 A2 A3 A4 A8 A

A

UTRON

Preliminary Rev. 0.1

FEATURES

Fast access time :

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55ns(max) for Vcc=3.0V~3.6V 70/100ns(max) for Vcc=2.7V~3.6V

CMOS Low operating power

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Operating current: 45/35/25mA (Icc max)

Standby current: 20 uA(TYP.) L-version

3 uA(TYP.) LL-version

Single 2.7V~3.6V power supply

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Operating temperature:

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Commercial : 0℃~70℃ Extended : -20℃~80℃

All inputs and outputs TTL compatible

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Fully static operation

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Three state outputs

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Data retention voltage: 1.5V (min)

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Data byte control :

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Package : 44-pin 400mil TSOPⅡ

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48-pin 6mm × 8mm TFBGA

LB

UB

(I/O1~I/O8)

(I/O9~I/O16)

FUNCTIONAL BLOCK DIAGRAM

.

MEMORY ARRAY

1024 Rows x 64 Columns x 16 bits

.

. .

COLUMN I/O

12

13

14

15

I/O1

.

I/O16

DECODER

. . .

CONTROL

ROW

I/O

.

. . .

UT62L6416

64K X 16 BIT LOW POWER CMOS SRAM

GENERAL DESCRIPTION

The UT62L6416 is a 1,048,576-bit low power CMOS static random access memory organized as 65,536 words by 16 bits.

The UT62L6416 operates from a single 2.7V ~

3.6V power supply and all inputs and outputs are fully TTL compatible.

The UT62L6416 is design for upper and low byte access by data byte control(

PIN DESCRIPTION

SYMBOL DESCRIPTION

A0 - A15 Address Inputs I/O1 - I/O16 Data Inputs/Outputs

CE

WE

OE

LB

UB VCC Power Supply VSS Ground NC No Connection

VCC

VSS

UB

Chip Enable Input

Write Enable Input

Output Enable Input

Lower-Byte Control

High-Byte Control

LB

).

11

10

COLUMN DECODER

A9

A7 A6

5

CE

WE

OE

LB

UB

LOGIC

CONTROL

UTRON TECHNOLOGY INC. P80073 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919

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T

UTRON

Preliminary Rev. 0.1

PIN CONFIGURATION

A4 A3

A2

A1

A0

CE

I/O1

I/O2

I/O3

I/O4

Vcc

Vss

I/O5

I/O6

I/O7

I/O8

WE

A15

A14 A13

A12

NC

1

2 3

4

5 6

7

8

9

10

11

12

13

14

15

16 17

18

19 20

21

22 23

UT62L6416

64K X 16 BIT LOW POWER CMOS SRAM

44

43 42

41

40

39

38 37

36

35

34

33 32

31

30

29

28 27

26

25

24

A5

A6

A7

OE

UB

LB

I/O16

I/O15

I/O14

I/O13

Vss

Vcc

I/O12

I/O11

I/O10

I/O9

NC

A8

A9

A10

A11

NC

A

B

C

D

E

F

G

H

LB

OE

I/O9

UB

I/O11I/O10

I/O12

Vss

I/O13

Vcc

I/O15 I/O14

I/O16

NC

A8

123456

UT62L6416

A0

A3

A5

NC

A14

A12

A9

TFBGA

A1

A4

A6

A7

NC I/O5

A15 I/O6

A13

A10

A2

CE

I/O4NC

WE

A11

NC

I/O1

I/O3I/O2

Vcc

Vss

I/O7

I/O8

NC

TSOP II

TRUTH TABLE

MODE

Output Disable Read L

Write L

Note: H = VIH, L=VIL, X = Don't care.

CE

OE

H X X X X High – Z High – Z ISB, I X X X H H High – Z High – Z I L L

H H

L L L

L

X L L

X

WE

LB

UB

H H H H H

L L L

L X L

H

L L

H

L

X L High – Z

H L L H L L

I/O OPERATION

I/O1-I/O8 I/O9-I/O16

High – Z

D

OUT

High – Z D

OUT

DIN High – Z D

IN

High – Z High – Z D

OUT

D

OUT

High – Z D

IN

DIN

SUPPLY CURREN

Standby

SB1

, I

SB

SB1

ICC,I

CC1,ICC2

I

CC,ICC1,ICC2

I

CC,ICC1,ICC2

UTRON TECHNOLOGY INC. P80073 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919

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UTRON

Preliminary Rev. 1.0

ABSOLUTE MAXIMUM RATINGS

64K X 16 BIT LOW POWER CMOS SRAM

*

UT62L6416

PARAMETER SYMBOL RATING UNIT

Terminal Voltage with Respect to VSS V Operating Temperature

Commercial T Extended T

Storage Temperature T

-0.5 to 4.6 V

TERM

A

-65 to +150

STG

0 to 70

-20 to 80

℃ ℃ ℃

Power Dissipation PD 1 W DC Output Current I Soldering Temperature (under 10 secs) Tsolder 260

*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.

50 mA

OUT

℃

DC ELECTRICAL CHARACTERISTICS

(VCC = 2.7V~3.6V, TA = 0℃ to 70℃ / -20℃ to 80℃(E))

PARAMETER

SYMBOL

Power Voltage VCC 2.7 3.0 3.6 V Input High Voltage VIH 2.2 - VCC+0.3 V Input Low Voltage VIL -0.2 - 0.6 V Input Leakage Current ILI

Output Leakage Current ILO

Output High Voltage VOH IOH= -1mA 2.2 - - V Output Low Voltage VOL IOL= 2 mA - - 0.4 V Operating Power

ICC Cycle time=min, 100%duty,

Supply Current

Icc1

Current

Icc2

Standby Current (TTL) ISB

Standby Current (CMOS) -L - 20 80

I

SB

TEST CONDITION MIN. TYP. MAX. UNIT

V

≦VIN ≦VCC

SS

V

≦V

SS

I/O

≦V

Output Disabled

CC;

- 1 - 1

55 - 30 45 mA

I/O=0mA,

CE

=V

;

IL

70 - 25 35 mA

100 - 20 25 mA

Cycle time=1µs,100%duty,I/O=0mA,

≦

0.2V,other pins at 0.2V or Vcc-0.2V,

CE

Cycle time=500ns,100%duty,I/O=0mA,

≦

0.2V,other pins at 0.2V or Vcc-0.2V,

CE

=V

1

1.

2.

1.

CE

UB

CE

other pins =VIL or VIH,

IH,

=

= V

other pins =VIL or VIH,

IH,

-0.2V,

=V

LB

CC

4 5 mA Average Operation

-

8 10 mA

-

- 0.3 0.5 mA

other pins at 0.2V or Vcc-0.2V,

2.

UB

=

=VCC-0.2V,

LB

-LL - 3 25

other pins at 0.2V or Vcc-0.2V,

A

µ

A

µ

A

µ

A

µ

UTRON TECHNOLOGY INC. P80073 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919

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

UTRON

Preliminary Rev. 1.0

CAPACITANCE

(TA=25℃, f=1.0MHz)

64K X 16 BIT LOW POWER CMOS SRAM

UT62L6416

PARAMETER SYMBOL MIN. MAX UNIT

Input Capacitance C Input/Output Capacitance C

Note : These parameters are guaranteed by device characterization, but not production tested.

IN

I/O

-

6 pF 8 pF

AC TEST CONDITIONS

Input Pulse Levels 0V to 3.0V Input Rise and Fall Times 5ns Input and Output Timing Reference Levels 1.5V Output Load CL = 30pF, IOH/IOL = -1mA / 2mA

AC ELECTRICAL CHARACTERISTICS

(1) READ CYCLE

PARAMETER SYMBOL UT62L6416-55 UT62L6416-70 UT62L6416-100

Read Cycle Time Address Access Time Chip Enable Access Time Output Enable Access Time Chip Enable to Output in Low Z Output Enable to Output in Low Z Chip Disable to Output in High Z Output Disable to Output in High Z Output Hold from Address Change

,UB

LB

Access Time

,UB

to High-Z Output

,UB

to Low-Z Output

(2) WRITE CYCLE

PARAMETER SYMBOL UT62L6416-55 UT62L6416-70 UT62L6416-100

Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write Time Output Active from End of Write Write to Output in High Z

,UB

LB

*These parameters are guaranteed by device characterization, but not production tested. *55ns for Vcc=3.0V~3.6V

Valid to End of Write

MIN. MAX. MIN. MAX. MIN. MAX.

tRC 55 - 70 - 100 - ns tAA - 55 - 70 - 100 ns t

- 55 - 70 - 100 ns

ACE

tOE - 30 - 35 - 50 ns t

10 - 10 - 10 - ns

CLZ*

t

5 - 5 - 5 - ns

OLZ*

t

- 20 - 25 - 30 ns

CHZ*

t

- 20 - 25 - 30 ns

OHZ*

tOH 5 - 5 - 5 - ns tBA - 55 - 70 - 100 ns

t

- 25 - 30 - 40 ns

BHZ

t

0 - 0 - 0 - ns

BLZ

MIN. MAX. MIN. MAX. MIN. MAX.

tWC 55 - 70 - 100 - ns tAW 50 - 60 - 80 - ns tCW 50 - 60 - 80 - ns tAS 0 - 0 - 0 - ns tWP 45 - 55 - 70 - ns tWR 0 - 0 - 0 - ns tDW 25 - 30 - 40 - ns tDH 0 - 0 - 0 - ns t

5 - 5 - 5 - ns

OW*

t

- 30 - 30 - 40 ns

WHZ*

tBW 45 - 60 - 80 - ns

(VCC =2.7V~3.6V, TA =0℃ to 70℃ / -20℃ to 80℃(E))

UNIT

UTRON TECHNOLOGY INC. P80073 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919

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