UTMC 5962P0151101TXC, 5962P0151101QXC, 5962L0151101QXC, 5962D0151101TXC, 5962D0151101QXC Datasheet

FEATURES

q 25ns maximum (5 volt supply) address access time
q Asynchronous operation for compatible with industry

standard 512K x 8 SRAMs

q TTL compatible inputs and o utput levels , three-state

bidirectional data bus

q Typical radiation performance

- Total dose: 50krads

- SEL Immune >80 MeV-cm2/mg

- LETTH(0.25) = >10 MeV-cm2/mg

- Saturated Cross Section (cm2) per bit , 5.0E -9

- <1E-8 errors/bit-day, Adams 90% geosynchronous
heavy ion

q Packaging options:

- 68-lead dual cavity ceramic quad flatpack (CQFP) ­(weight 7.37 grams)

q Standard Microcircuit Drawing 5962-01511

- QML T and Q compliant part

INTRODUCTION

The QCOTSTM UT9Q512K32 Quantified Commercial
Off-the-Shelf product is a high-performance 2M byte
(16Mbit) CMOS static RAM multi-chip module (MCM),
organized as four individual 524,288 x 8 bit SRAMs with a
common output enable. Memory expansion is provided by
an active LOW chip enable (En), an active LOW output
enable (G), and three-state drivers. This device has a power­down feature that reduces power consumption by more than
90% when deselected .

Writing to each memory is accomplished by taking chip
enable (En) input LOW and write enable (Wn) inputs LOW.
Data on the eight I/O pins (DQ0 through DQ7) is then written

into the location specified on the address pins (A0 through
A18). Reading from the device is accomplished by taking
chip enable (En) and output enable (G) LOW while forcing

write enable (Wn) HIGH. Under these conditions, the
contents of the memory location specified by the address
pins will appear on the I/O pins.

The input/output pins are placed in a high impedance state
when the device is deselected (En HIGH), the outputs are
disabled (G HIGH), or during a write operation (En LOW
and Wn LOW). Perform 8, 16, 24 or 32 bit accesses by
making Wn along with En a common input to any
combination of the discrete memory die.

Figure 1. UT9Q512K32 SRAM Block Diagram

512K x 8 512K x 8 512K x 8 512K x 8

DQ(31:24)

or

DQ3(7:0)

DQ(23:16)

or

DQ2(7:0)

DQ(15:8)

or

DQ1(7:0)

DQ(7:0)
or
DQ0(7:0)

G

A(18:0)

W3

E3

E2

E1

E0

W2

W1

W0

Standard Products

QCOTS

TM

UT9Q512K32 16Megabit SRAM MCM

Data Sheet

June, 2003

2

PIN NAMES

DEVICE OPERATION

The UT 9Q512 has three control inputs called Enable 1 (En),
Write Enable (Wn), and Output Enable (G); 19 address inputs,
A(18:0); and eight bidirectional data lines, DQ(7:0). En Device
Enable controls device selection, active, and standby modes.
Asserting En enables the device, causes I

DD

to rise to its active

value, and decodes the 19 address inputs to select one of 524,288
words in the memory. Wn controls read and write operations.
During a read cycle, G must be asserted to enable the outputs.

Table 1. Device Operation Truth Table

Notes:

1. “X” is defined as a “don’t care” condition.

2. Device active; outputs disabled.

READ CYCLE

A combination of Wn greater than V

IH

(min) and En less than

V

IL

(max) defines a read cycle. Read access time is measured

from the latter of Device Enable, Output Enable, or valid address
to valid data output.

SRAM Read Cycle 1, the Address Access in figure 3a, is
initiated by a change in address inputs while the chip is enabled
with G asserted and Wn deasserted. Valid data appears on data
outputs DQ(7:0) after the specified t

AVQV

is satisfied. Outputs

remain active throughout the entire cycle. As long as Device
Enable and Output Enable are active, the address inputs may
change at a rate equal to the minimum read cycle time (t

AVAV

).

SRAM read Cycle 2, the Chip Enable - Controlled Access in
figure 3b, is initiated by En going active while G remains
asserted, Wn remains deasserted, and the addresses remain
stable for the entire cycle. After the specified t

ETQV

is satisfied,
the eight-bit word addressed by A(18:0) is accessed and appears
at the data outputs DQ(7:0).

SRAM read Cycle 3, the Output Enable - Controlled Access in
figure 3c, is initiated by G going active while En is asserted, Wn
is deasserted, and the addresses are stable. Read access time is
t

GLQV

unless t

AVQV

or t

ETQV

have not been satisfied.

A(18:0) Address Wn Write Enable

DQn(7:0) Data Input/Output G Output Enable

En

Enable

V

DD

Power

V

SS

Ground

10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26

60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44

9 8 7 6 5 4 3 2 1 68 67 66 65 64 63 62 61

27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43

Top View

DQ0(0)
DQ1(0)
DQ2(0)
DQ3(0)
DQ4(0)
DQ5(0)
DQ6(0)
DQ7(0)

V

SS

DQ0(1)
DQ1(1)
DQ2(1)
DQ3(1)

DQ4(1)
DQ5(1)
DQ6(1)
DQ7(1)

DQ0(2)
DQ1(2)
DQ2(2)
DQ3(2)
DQ4(2)
DQ5(2)
DQ6(2)
DQ7(2)

V

SS

DQ0(3)
DQ1(3)
DQ2(3)
DQ3(3)
DQ4(3)
DQ5(3)
DQ6(3)
DQ7(3)

NC

A0A1A2A3A4

A5

E2

V

SS

E3

W0

A6A7A8

A9

A10

V

DD

V

DD

A11

A12

A13

A14

A15

A16

E0GE1

A17

W 1

W 2

W 3

A18

NC

NC

Figure 2. 25ns SRAM Pinout (68)

G Wn En I/O Mode Mode

X

1

X 1 3-state Standby

X 0 0 Data in Write

1 1 0 3-state

Read

2

0 1 0 Data out Read

3

WRITE CYCLE

A combination of Wn less than VIL(max) and En less than
VIL(max) defines a write cycle. The state of G is a “don’t care”
for a write cycle. The outputs are placed in the high-impedance

state when either G is greater than VIH(min), or when Wn is less
than VIL(max).

Write Cycle 1, the Write Enable-controlled Access is defined
by a write terminated by Wn going high, with En still active.
The write pulse width is defined by t

WLWH

when the write is

initiated by Wn, and by t

ETWH

when the write is initiated by En.

Unless the outputs have been previously placed in the high­impedance state by G, the user must wait t

WLQZ

before applying

data to the nine bidirectional pins DQ(7:0) to avoid bus
contention.

Write Cycle 2, the Chip Enable-controlled Access is defined by
a write terminated by the latter of En going inactive. The write
pulse width is defined by t

WLEF

when the write is initiated by

Wn, and by t

ETEF

when the write is initiated by the En going

active. For the Wn initiated write, unless the outputs have been
previously placed in the high-impedance state by G, the user
must wait t

WLQZ

before applying data to the eight bidirectional

pins DQ(7:0) to avoid bus contention.

TYPICAL RADIATION HARDNESS

The UT9Q512K32 SRAM incorporates features which allows
operation in a limited radiation environment.

Table 2. Radiation Hardness

Design Specifications

1

Notes:

1. The SRAM will not latchup during radiation exposure under recommended

operating conditions.

2. 90% worst case particle environment, Geosynchronous orbit, 100 mils of

Aluminum.

Total Dose 50 krad(Si)

Heavy Ion
Error Rate

2

<1E-8 Errors/Bit-Day

4

ABSOLUTE MAXIMUM RATINGS

1

(Referenced to VSS)

Notes:

1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability and performance.

2. Maximum junction temperature may be increased to +175°C during burn-in and steady-static life.

3. Test per MIL-STD-883, Method 1012.

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER LIMITS

V

DD

DC supply voltage -0.5 to 7.0V

V

I/O

Voltage on any pin -0.5 to 7.0V

T

STG

Storage temperature -65 to +150°C

P

D

Maximum power dissipation 1.0W (per byte)

T

J Maximum junction temperature

2

+150°C

Θ

JC

Thermal resistance, junction-to-case

3

10°C/W

I

I

DC input current

±10 mA

SYMBOL PARAMETER LIMITS

V

DD

Positive supply voltage 4.5 to 5.5V

T

C

Case temperature range -40 to +125°C

V

IN

DC input voltage 0V to V

DD

5

DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*

(-40°C to +125°C) (VDD = 5.0V + 10%)

Notes:

* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019 .

1. Measured only for initial qualification and after process or design changes that could affect input/output capacitance.

2. Supplied as a design limit but not guaranteed or tested.

3. Not more than one output may be shorted at a time for maximum duration of one second.

SYMBOL PARAMETER CONDITION MIN MAX UNIT

V

IH

High-level input voltage 2.0 V

V

IL

Low-level input voltage 0.8 V

V

OL1

Low-level output voltage IOL = 8mA, VDD =4.5V

0.4

V

V

OL2

Low-level output voltage IOL = 200µA,VDD =4.5V 0.08 V

V

OH1

High-level output voltage IOH = -4mA,VDD =4.5V 2.4 V

V

OH2

High-level output voltage IOH = 200µA,VDD =4.5V 3.0 V

C

IN

1

Input capacitance ƒ = 1MHz @ 0V 32 pF

C

IO

1

Bidirectional I/O capacitance ƒ = 1MHz @ 0V 16 pF

I

IN

Input leakage current VIN = VDD and V

SS, VDD

= VDD (max) -2 2 µA

I

OZ

Three-state output leakage current VO = VDD and V

SS

VDD = VDD (max)
G = VDD (max)

-2 2 µA

I

OS

2, 3

Short-circuit output current VDD = VDD (max), VO = V

DD

VDD = VDD (max), VO = 0V

-90 90 mA

IDD(OP) Supply current operating

@ 1MHz
(per byte)

Inputs: VIL = 0.8V,
VIH = 2.0V
I

OUT

= 0mA

VDD = VDD (max)

125 mA

I

DD1

(OP) Supply current operating

@40MHz
(per byte)

Inputs: VIL = 0.8V,
VIH = 2.0V
I

OUT

= 0mA

VDD = VDD (max)

180 mA

I

DD2

(SB) Supply current standby

@0MHz
(per byte)

Inputs: VIL = VSS
I

OUT

= 0mA

E1 = V

DD

- 0.5, V

DD

= VDD (max)

VIH = VDD - 0.5V

6

12

mA

mA

-40°C and
25°C

125°C

6

AC CHARACTERISTICS READ CYCLE (Pre/Post-Radiation)*

(-40°C to +125°C) (VDD = 5.0V + 10%)

Notes: * Post-radiation performance guaranteed at 25 °C per MIL-STD-883 Method 1019.

1. Functional test.

2. Three-state is defined as a 500mV change from steady-state output voltage.

3. The ET (enable true) notation refers to the falling edge of En. SEU immunity does not affect the read parameters.

4. The EF (enable false) notation refers to the rising edge of En. SEU immunity does not affect the read parameters.

SYMBOL PARAMETER MIN

MAX

UNIT

t

AVAV

1

Read cycle time 25 ns

t

AVQV

Read access time 25 ns

t

AXQX

2

Output hold time 3 ns

t

GLQX

2

G-controlled Output Enable time 3 ns

t

GLQV

G-controlled Output Enable time (Read Cycle 3) 10 ns

t

GHQZ

2

G-controlled output three-state time 10 ns

t

ETQX

2,3

En-controlled Output Enable time 3 ns

t

ETQV

3

En-controlled access time 25 ns

t

EFQZ

1,2,4

En-controlled output three-state time 10 ns

{

{

}

}

V

LOAD

+ 500mV

V

LOAD

- 500mV

V

LOAD

VH - 500mV

VL + 500mV

Active to High Z LevelsHigh Z to Active Levels

Figure 3. 5-Volt SRAM Loading

7

Assumptions:

1. En and G < VIL (max) and Wn > VIH (min)

A(18:0)

DQn(7:0)

Figure 4a. SRAM Read Cycle 1: Address Access

t

AVAV

t

AVQV

t

AXQX

Previous Valid Data

Valid Data

Assumptions:

1. G < VIL (max) and Wn > VIH (min)

A(18:0)

Figure 4b. SRAM Read Cycle 2: Chip Enable-Controlled Access

En

DATA VALID

t

EFQZ

t

ETQV

t

ETQX

DQn(7:0)

Figure 4c. SRAM Read Cycle 3: Output Enable-Controlled Access

A(18:0)

DQn(7:0)

G

t

GHQZ

Assumptions:

1. En < VIL (max) and W n > VIH (min)

t

GLQV

t

GLQX

t

AVQV

DATA VALID

8

AC CHARACTERISTICS WRITE CYCLE (Pre/Post-Radiation)*

(-40°C to +125°C) (VDD = 5.0V + 10%)

Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883 Method 1019.

1. Functional test performed with outputs disabled (G high).

2. Three-state is defined as 500mV change from steady-state output voltage.

SYMBOL PARAMETER MIN

MAX

UNIT

t

AVAV

1

Write cycle time 25 ns

t

ETWH

Device Enable to end of write 20 ns

t

AVET

Address setup time for write (En - controlled) 1 ns

t

AVWL

Address setup time for write (Wn - controlled) 0 ns

t

WLWH

Write pulse width 20 ns

t

WHAX

Address hold time for write (Wn - controlled) 0 ns

t

EFAX

Address hold time for Device Enable (En - controlled) 0 ns

t

WLQZ

2

Wn - controlled three-state time 10 ns

t

WHQX

2

Wn - controlled Output Enable t ime 5 ns

t

ETEF

Device Enable pulse width (En - controlled) 20 ns

t

DVWH

Data setup time 15 ns

t

WHDX

Data hold time 0 ns

t

WLEF

Device Enable controlled write pulse width 20 ns

t

DVEF

Data setup time 15 ns

t

EFDX

Data hold time 0 ns

t

AVWH

Address valid to end of write 20 ns

t

WHWL

1

Write disable time 5 ns

9

Assumptions:

1. G < VIL (max). If G > VIH (min) then Qn(7:0) will be
in three-state for the entire cycle.

2. G high for t

AVAV

cycle.

Wn

t

AVWL

Figure 5a. SRAM Write Cycle 1: Write Enable - Controlled Access

A(18:0)

Qn(7:0)

En

t

AVAV

2

Dn(7:0)

APPLIED DATA

t

DVWH

t

WHDX

t

ETWH

t

WLWH

t

WHAX

t

WHQX

t

WLQZ

t

AVWH

t

WHWL

10

t

EFDX

Assumptions & Notes:

1. G < VIL (max). If G > V IH (min) then Qn(7:0) will be in three-state for the entire cycle.

2. Either En scenario above can occur.

3. G high for t

AVAV

cycle.

A(18:0)

Figure 5b. SRAM Write Cycle 2: Chip Enable - Controlled Access

Wn

En

Dn(7:0)

APPLIED DATA

En

Qn(7:0)

t

WLQZ

t

ETEF

t

WLEF

t

DVEF

t

AVAV

3

t

AVET

t

AVET

t

ETEF

t

EFAX

t

EFAX

or

Notes:

1. 50pF including scope probe and test socket capacitance.

2. Measurement of data output occurs at the low to high or high to low transition mid-point
(i.e., CMOS input = VDD/2).

90%

Figure 6. AC Test Loads and Input Waveforms

Input Pulses

10%

< 5ns < 5ns

V

LOAD

= 1.55V

300 ohms

50pF

CMOS

0.5V

VDD-0.05V

10%

11

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(1 Second Data retention Test)

Notes:

1. En = V

DD

- .2V, all other inputs = VDR or VSS.

2. Data retention current (I

DDR

) Tc = 25oC.

3. Not guaranteed or tested.

4. VDR = T=-40oC and 125oC.

DATA RETENTION CHARACTERISTICS (Pre/Post-Irradiation)

(10 Second Data Retention Test, TC=-40oC and +125oC)

Notes:

1. Performed at VDD (min) and VDD (max).

2. En = VSS, all other inputs = VDR or VSS.

3. Not guaranteed or tested.

SYMBOL PARAMETER MINIMUM MAXIMUM UNIT

V

DR

VDD for data retention 2.5 -- V

I

DDR

1,2

Data retention current (per byte) -- 5.0 mA

t

EFR

1,3

Chip deselect to data retention time 0 ns

t

R

1,3

Operation recovery time t

AVAV

Ns

SYMBOL PARAMETER MINIMUM MAXIMUM UNIT

V

DD

1

VDD for data retention 4.5 5.5 V

t

EFR

2, 3

Chip select to data retention time 0 ns

t

R

2, 3

Operation recovery time t

AVAV

ns

V

DD

DATA RETENTION MODE

t

R

4.5V

4.5V

VDR > 2.5V

Figure 7. Low VDD Data Retention Waveform

t

EFR

E1

V

DD

= V

DR

12

PACKAGING

Figure 8. 68-pin Ceramic FLATPACK

Notes:

1. Package shipped with non-conductive
strip (NCS). Leads are not trimmed.

2. Total weight approx. 7.37g.

13

ORDERING INFORMATION
512K32 16Megabit SRAM MCM:

Device Type:

- =25ns access time, 5.0V operation

Package Type:
(S) = 68-lead dual cavity CQFP

Screening:
(P) = Prototype flow

(W) = Extended Industrial Temperature Range Flow (-40oC to +125oC)

Lead Finish:
(C) = Gold

Notes:

1. Prototype flow per UTMC Manufacturing Flows Document. Devices are tested at 25oC. Gold lead finish only.

2. Extended Industrial Temperature Range flow per UTMC Manufacturing Flows Document. Devices are tested at -40°C to +125°C. Radiation neither

tested nor guaranteed. Gold Lead Finish Only.

UT9Q512K32 -* * * *

Aeroflex UTMC Core Part Number

14

512K32 16Megabit SRAM MCM: SMD

5962 - 01511 **

* * *

Notes:

1. Total dose radiation must be specified when ordering. Gold finish only.

2. Only Extended Industrial temperature -40C to +125C. No military temp. test available.

Federal Stock Class Designator: No Options

Total Dose
(-) = none
(D) = 1E4 (10krad(Si))
(P) = 3E4 (30krad(Si)) (contact factory)
(L) = 5E4 (50krad(Si)) (contact factory)

Drawing Number: 01511

Device Type
01 = 25 ns access time, 5.0V operation, Extended Industrial Temp (-40oC to +125oC)

Class Designator:
(T) = QML Class T
(Q) = QML Class Q

Case Outline:
(X) = 68-lead dual cavity CQFP

Lead Finish:
(C) = Gold