UTC MMBTA44G, MMBTA45G Schematic [ru]

UNISONIC TECHNOLOGIES CO., LTD

MMBTA44/45

NPN SILICON TRANSISTOR

HIGH VOLTAGE TRANSISTORS

 FEATURES

*Collector-Emitter voltage: V
V
*Collector current up to 300mA
*Complement to UTC
*Power Dissipation: P

MMBTA94/93

(max)=350mW

D

=400V (UTC

CEO

=350V (UTC

CEO

 ORDERING INFORMATION

Ordering Number Package

MMBTA44G-AE3-R SOT-23 E B C Tape Reel
MMBTA45G-AE3-R SOT-23 E B C Tape Reel

Note: Pin Assignment: E: Emitter B: Base C: Collector

MMBTA44

MMBTA45

)

)

3

1

2

SOT-23

(JEDEC TO-236)

Pin Assignment

1 2 3

Packing

MARKINGS



MMBTA44

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MMBTA45

MMBTA44/45

ABSOLUTE MAXIMUM RATINGS



NPN SILICON TRANSISTOR

PARAMETER SYMBOL RATINGS UNIT

Collector-Base Voltage

Collector-Emitter Voltage

MMBTA44
MMBTA45 400 V
MMBTA44
MMBTA45 350 V

Emitter-Base Voltage V

V

CBO

V

CEO

6 V

EBO

500 V

400 V

Collector Current IC 300 mA

Power Dissipation

T

=25°C

A

TC=25°C 1.5 W

P

D

350 mW

Junction Temperature TJ +150 °C
Storage Temperature T

-40 ~ +150 °C

STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS



(TJ =25°C, unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT

Collector-Base Breakdown
Voltage

Collector-Emitter Breakdown
Voltage

MMBTA44
MMBTA45 400 V
MMBTA44
MMBTA45 350 V

BV

BV

Emitter-Base Breakdown Voltage BV

IC=100μA, IB=0

CBO

IC =1mA, IB=0

CEO

IE=100μA, IC =0 6 V

EBO

500 V

400 V

IC =1mA, IB=0.1mA 0.4 V

Collector-Emitter Saturation Voltage V

CE(SAT)

IC =10mA, IB=1mA 0.5 V
IC =50mA, IB=5mA 0.75 V

Base-Emitter Saturation Voltage V

Collector Cut-off Current

Collector Cut-off Current

MMBTA44
MMBTA45 VCB=320V, IE =0 0.1 μA
MMBTA44
MMBTA45 V

Emitter Cut-off Current I

DC Current Gain (Note)

Current Gain Bandwidth Product fT

IC 10mA, IB=1mA 0.75 V

BE(SAT)

V

=400V, IE =0 0.1 μA

I

I

h

h
h
h

CBO

CES

EBO

FE1

FE2

FE3

FE4

CB

V

=400V, IB=0 0.5 μA

CE

=320V, IB=0 0.5 μA

CE

VEB=4V, IC =0 0.1 μA
V

=10V, IC =1mA 40

CE

V

=10V, IC =10mA 50 240

CE

V

=10V, IC =50mA 45

CE

V

=10V, IC =100mA 40

CE

V

=20V, IC =10mA

CE

f=100MHz

50 MHz

Output Capacitance Cob VCB=20V, IE =0, f=1MHz 7 pF
Note: Pulse test: P

300μs, Duty Cycle<2%

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W

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