Page 1
Darlington Transistors
PNP Silicon
LESHAN RADIO COMPANY, LTD.
MMBTA63LT1
3
COLLECTOR
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage V
Collector–Base Voltage V
Emitter–Base Voltage V
Collector Current — Continuous I
CES
CBO
EBO
C
–30 Vdc
–30 Vdc
–10 Vdc
–500 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) P
D
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient R
T otal Device Dissipation P
θJA
D
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient R
Junction and Storage T emperature TJ , T
θJA
stg
225 mW
556 °C/W
300 mW
417 °C/W
–55 to +150 °C
MMBTA64LT1
3
1
2
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
DEVICE MARKING
MMBTA63LT1 = 2U MMBTA64LT1 = 2V
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted.)
A
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I C = –100 µAdc, )
Collector Cutoff Current
( V CB = –30Vdc)
Emitter Cutoff Current
( V EB = –10Vdc )
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)CEO
I
CBO
I
EBO
–30 — Vdc
— –100 nAdc
— –100 nAdc
M30–1/3
Page 2
LESHAN RADIO COMPANY, LTD.
MMBTA63LT1 MMBTA64LT1
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise noted) (Continued)
A
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain(3) h
(I C = –10 mAdc, V
(I C = –10 mAdc, V
(I C = –100mAdc, V
(I C = –100mAdc, V
= –5.0 Vdc) MMBTA63 5,000 —
CE
= –5.0 Vdc) MMBTA64 10,000 —
CE
= –5.0Vdc) MMBTA63 10,000 —
CE
= –5.0Vdc) MMBTA64 20,000 —
CE
Collector–Emitter Saturation Voltage
(I C = –100 mAdc, I B = –0.1 mAdc)
Base–Emitter On Voltage
(I C = –100mAdc, V
= –5.0Vdc)
CE
SMALL–SIGNAL CHARACTERISTICS
Current – Gain–Bandwidth Product(4)
(V CE = –5.0 Vdc, I C = –10mAdc, f = 100 MHz)
3. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
V
V
FE
CE(sat)
BE(on)
f
––
–– –1.5 Vdc
— –2.0 Vdc
T
125 — MHz
M30–2/3
Page 3
LESHAN RADIO COMPANY, LTD.
MMBTA63LT1 MMBTA64LT1
200
100
70
50
30
20
10
7.0
5.0
, DC CURRENT GAIN (X1.0 K)
FE
3.0
h
2.0
–0.3 –0.5 –0.7 –1.0 –2.0 –3.0 –5.0 –7.0 –10 –20 –30 –50 –70 –100 –200 –300
T A = 125°C
25°C
–55°C
V
I C , COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
= –2.0 V
CE
–5.0 V
–10 V
–2.0
T A = 25°C
@ I C /I B = 100
V
–1.6
–1.2
V
–0.8
–0.4
V, VOLTAGE (VOLTS)
–0
–0.3–0.5 –1.0 –2.0–3.0 –5.0 –10 –20–30 –50 –100 –200–300
@ I C /I B = 1000
CE(sat)
BE(sat)
V
@ V CE = –5.0 V
BE(on)
I
/I B = 100
C
I C , COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
10
V
= –5.0 V
CE
f = 100 MHz
4.0
T A = 25°C
3.0
2.0
1.0
–2.0
–1.8
–1.6
I C = –10 mA
–1.4
–1.2
(VOLTS)
–1.0
–0.8
, COLLECTOR– EMITTER VOLTAGE
–0.6
CE
–0.1 –0.2 –0.5–1.0 –2.0 –5.0 –10 –20 – 50 –100 –300 –500 –1k –2k –5k –10k
V
–50 mA –100 mA
–175 mA –300 mA
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
T
= 25°C
A
0.4
0.2
0.1
|, HIGH FREQUENCY CURRENT GAIN
–1.0 –2.0 –5.0 –10 –20 –50 –100 –200 –500 –1k
FE
|h
I C , COLLECTOR CURRENT (mA)
Figure 4. High Frequency Current Gain
M30–3/3
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