UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR
VOLTAGE AMPLIFIER
APPLICATIONS POWER
AMPLIFIER APPLICATIONS
FEATURES
* High voltage: VCEO= 120V
* High transition frequency: fT=120MHz(typ.)
* Pc=1.0 ~ 2.0 W(mounted on ceramic substrate)
* Complementary to 2SA1201
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Collector-base voltage VCBO
Collector-emitter voltage VCEO
Emitter-base voltage VEBO
Collector current IC
Base current IB
Collector power dissipation
Junction temperature Tj
Storage temperature range Tstg
Note 1: Mounted on ceramic substrate( 250mm2×0.8t )
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 120 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA, Ic=0 5 V
Collector cut-off current ICBO VCB=120V, IE=0 0.1
Emitter cut-off current IEBO VEB=5V, IC=0 0.1
DC current gain hFE VCE=5V, IC=100mA 80 240
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 1.0 V
Base-emitter voltage VBE VCE=5V, IC=500mA 1.0 V
Transition frequency fT VCE=5V, IC=100mA 120 MHz
Collector output capacitance Cob VCB=10V, f=1MHz, IE=0 30 pF
CLASSIFICATION OF hFE
RANK O Y
RANGE 80 - 160 120 - 240
(Ta=25℃)
PC
PC(Note 1)
1
1:EMITTER 2:COLLECTOR 3:BASE
120
120
5
800
160
500
1000
150
-55 ~ 150
SOT-89
V
V
V
mA
mA
mW
°C
°C
μA
μA
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R208-032,A
UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
2050
4
Ic - VCE
10
5
3
2
RL=8次IB=1mA
0
8
VCE(sat) - Ic
Common
emitter
Ta=25℃
12
CE (V)
Common emitter
B=10
Ic/I
16
800
600
400
200
Collector current, Ic (mA)
0
0
Coll ector-emitt er voltage V
1
0.5
0.3
1000
500
300
100
50
30
Collector current, Ic (mA)
10
1.0
0.8
0.6
3
Common emitter
CE=5V
V
hFE - Ic
Common emitter
CE=5V
V
RL=8次
Ta=100℃
25
-25
30
10
Collector current Ic (mA)
100
Ic - VBE
300
1000
CE (sat) (V)
V
0.1
0.05
Collector -emitter saturation voltage,
0.03
3
3000
1000
Ic max (continuous)
500
300
100
50
30
10
Collector current, Ic (mA)
5
3
1
0.3
RL=8次
Ta=100℃
25
-25
30
10
Collector current, Ic (mA)
Safe Oper ating Area
Ic max (pulse)*
10ms*
100ms*
DC operation
Ta=25℃
*:Single nonrepetitive pulse
Ta=25℃
Curves must be derated
linearly with incr ease in
temperature
Tested without a substrate
10
3
1
Collector-emitter voltage, V
100
30
300
1ms*
100 300
CE (V)
1000
0.4
Collector current, Ic (A)
0.2
0
0
1.2
(1)
1.0
0.8
0.6
(2)
0.4
0.2
Collector power dissipation, Pc (W)
0
0
20
RL=8次
Ta=100℃
0.4
0.2
Base-emitter voltage V
(1) Mounted on ceramic substrate
( 250mm × 0.8t )
(2) No heat sin k
40
Ambient temperature, T a (℃ )
60
0.6
Pc - Ta
80
25
0.8
2
100 120
-25
1.0 1.2
BE (V)
140 160
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R208-032,A
UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, ev en momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UTC UNISONIC TECHNOLOGIES CO., LTD. 3
QW-R208-032,A
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