UTC 2SC2881 Schematics
UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR
VOLTAGE AMPLIFIER
APPLICATIONS POWER
AMPLIFIER APPLICATIONS
FEATURES
* High voltage: VCEO= 120V
* High transition frequency: fT=120MHz(typ.)
* Pc=1.0 ~ 2.0 W(mounted on ceramic substrate)
* Complementary to 2SA1201
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL RATINGS UNIT
Collector-base voltage VCBO
Collector-emitter voltage VCEO
Emitter-base voltage VEBO
Collector current IC
Base current IB
Collector power dissipation
Junction temperature Tj
Storage temperature range Tstg
Note 1: Mounted on ceramic substrate( 250mm2×0.8t )
ELECTRICAL CHARACTERISTICS (Ta=25℃)
PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT
Collector-emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 120 V
Emitter-base breakdown voltage V(BR)EBO IE=1mA, Ic=0 5 V
Collector cut-off current ICBO VCB=120V, IE=0 0.1
Emitter cut-off current IEBO VEB=5V, IC=0 0.1
DC current gain hFE VCE=5V, IC=100mA 80 240
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB=50mA 1.0 V
Base-emitter voltage VBE VCE=5V, IC=500mA 1.0 V
Transition frequency fT VCE=5V, IC=100mA 120 MHz
Collector output capacitance Cob VCB=10V, f=1MHz, IE=0 30 pF
CLASSIFICATION OF hFE
RANK O Y
RANGE 80 - 160 120 - 240
(Ta=25℃)
PC
PC(Note 1)
1
1:EMITTER 2:COLLECTOR 3:BASE
120
120
5
800
160
500
1000
150
-55 ~ 150
SOT-89
V
V
V
mA
mA
mW
°C
°C
μA
μA
UTC UNISONIC TECHNOLOGIES CO., LTD. 1
QW-R208-032,A
UTC 2SC2881 NPN EPITAXIAL SILICON TRANSISTOR
TYPICAL PERFORMANCE CHARACTERISTICS
2050
4
Ic - VCE
10
5
3
2
RL=8次IB=1mA
0
8
VCE(sat) - Ic
Common
emitter
Ta=25℃
12
CE (V)
Common emitter
B=10
Ic/I
16
800
600
400
200
Collector current, Ic (mA)
0
0
Coll ector-emitt er voltage V
1
0.5
0.3
1000
500
300
100
50
30
Collector current, Ic (mA)
10
1.0
0.8
0.6
3
Common emitter
CE=5V
V
hFE - Ic
Common emitter
CE=5V
V
RL=8次
Ta=100℃
25
-25
30
10
Collector current Ic (mA)
100
Ic - VBE
300
1000
CE (sat) (V)
V
0.1
0.05
Collector -emitter saturation voltage,
0.03
3
3000
1000
Ic max (continuous)
500
300
100
50
30
10
Collector current, Ic (mA)
5
3
1
0.3
RL=8次
Ta=100℃
25
-25
30
10
Collector current, Ic (mA)
Safe Oper ating Area
Ic max (pulse)*
10ms*
100ms*
DC operation
Ta=25℃
*:Single nonrepetitive pulse
Ta=25℃
Curves must be derated
linearly with incr ease in
temperature
Tested without a substrate
10
3
1
Collector-emitter voltage, V
100
30
300
1ms*
100 300
CE (V)
1000
0.4
Collector current, Ic (A)
0.2
0
0
1.2
(1)
1.0
0.8
0.6
(2)
0.4
0.2
Collector power dissipation, Pc (W)
0
0
20
RL=8次
Ta=100℃
0.4
0.2
Base-emitter voltage V
(1) Mounted on ceramic substrate
( 250mm × 0.8t )
(2) No heat sin k
40
Ambient temperature, T a (℃ )
60
0.6
Pc - Ta
80
25
0.8
2
100 120
-25
1.0 1.2
BE (V)
140 160
UTC UNISONIC TECHNOLOGIES CO., LTD. 2
QW-R208-032,A
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