USHA MJE3055T Datasheet
SILICON P LASTIC POWER TRANSISTOR
NPN MJE3055T
10A 75W
Technical Data
…designed for general-purpose switching and amplifier application.
F DC Current Gain - h FE = 20 – 100 @ I
F Collector-Emitter Saturation Voltage – V
= 4Adc
C
(sat) = 1.1 Vdc (Max) @ IC = 4Adc
CE
F Excellent Safe Operating Area
F TO-220 Package
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector- Emitter Voltage V
Collector – Base Voltage V
Emitter Base Voltage V
Collector Current – Continuos I
Base Current – Continuos I
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage junction
Temperature Range
PD 75
Tj,Tstg -65 to +150 °C
THERMAL CHARACTERISTICS
CEO
CB
EB
C
B
60 Vdc
70 Vdc
5 Vdc
10 Adc
6 Adc
Watts
0.6
W/°C
Characteristic Symbol Max. Unit
Thermal resistance junction to case R
thjc
1.67
°C/W
ELECTRICAL CHARACTERISTICS :[ Tc = 25 °C unless otherwise noted ]
CEO(sus)
CE
=70Vdc,V
BE(off)
=1.5Vdc,TC=150¼C]
Characteristic Symbol Min Typ Max Unit
* OFF CHARACTERISTICS :
Collector–Emitter Sustaining Voltage (1)
[ Ic =200 mAdc, IB = 0 ]
Collector Cutoff Current
[ VCB = 70 Vdc, IE=0 ]
[VCB=70Vdc,IE=0,TC=150¼C]
Collector Cutoff Current
[ VCE = 30 Vdc, IB = 0 ]
V
I
CBO
I
CE0
60 Vdc
1.0 mAdc
0.70 mAdc
Collector Cutoff Current
[ VCE = 70 Vdc, V
BE(off)
= 1.5 Vdc ]
[V
Emitter Cutoff Current
[ VBE = 5.0 Vdc , Ic = 0 ]
* ON CHARACTERISTICS (1):
DC Current Gain
[ Ic = 4.0 Adc , VCE = 4.0 Vdc ]
[ Ic = 10 Adc , VCE = 4.0 Vdc ]
Collector-Emitter Saturation Voltage
[ Ic = 4.0 Adc , IB = 400 mAdc ]
[ Ic = 10 Adc , IB = 3.3 Adc ]
Base-Emitter on Voltage
[ Ic = 4.0 Adc , VCE= 4.0. VDC ]
SECOND BREAKDOWN
Second Breakdown Collector current
With Base Forward Biased
[VCE=37.5Vdc, t = 1.0 s Nonrepetitive]
I
I
h
CEX
EBO
FE
20
1.0 mAdc
5.0 mAdc
100
5.0
V
CE(sat)
1.1
8.0
V
BE(on)
1.8 Vdc
1s/b 2 Adc
Vdc
DYNAMIC CHARACTERISTICS :
Current Gain – Bandwidth Product
[ Ic = 0.5Adc , VCE=10 Vdc , f=500kHz ]
• (1) Pulse Test : Pulse Width <300µs , Duty Cycle < 2.0%
f
T
2.0 MHz
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