SUBMINIATURE
PHOTOINTERRUPTER
MIR-3301
Description Package Dimensions
Unit: mm
The MIR-3301 consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor built in a black plastic housing. It is a reflective subminiature photointerrupter.
( Emitter center )
3.4±0.2
1.80
A
D
CB
Features
l Compact and thin
l MIR-3301 : Compact DIP, long lead type
l Optimum detecting diatance : 0.8 - 1.0 mm
l Wavelength : 940nm
l Visible light cut-off type
±15°
0.5±0.1
±15°
( Detector center )
0.65
1.5±0.2
10±1.0
0~20° 0~20°
A
B
2.75±0.2
4.0
D
C
0.15
Absolute Maximum Ratings
Parameter Symbol Minimum Rating Maximum Rating Unit
Continuous Forward Current
INPUT Reverse Voltage
Power Dissipation
Collector-emitter breakdown voltage
OUTPUT Emitter-Collector breakdown voltage
Collector power dissipation
Total power dissipation
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature (within 5 sec, minimum 1.6mm from body) at 260oC
V
P
V
(BR)CEO
V
(BR)ECO
P
T
I
P
TOT
T
F
ad
C
opr
stg
@ TA=25oC
50 mA
R
5 V
75 mW
30 V
5 V
75 mW
100 mW
o
C to + 85oC
o
C to + 100oC
Unity Opto Technology Co., Ltd.
02/04/2002
MIR-3301
Optical-Electrical Characteristics
*2
Device
Ambient Temperature
TOT
Ta=25oC
Forward Voltage
Parameter Min . Typ . Max . Unit . Test Conditions
Input Forward Voltage - 1.2 1.4 V
Reverse Current - - 10 µA
Output Collector Dark Current - - 100 nA Vce=10V
*1
Transfer Cha-
Collector Current
racteristics
Response Time (RISE) - 20 100 µS
Response Time (FALL) - 20 100 µS
Leak Current - - 0.1 µA
Symbol
V
I
Iceo
Ic
t
t
I
LEAK
F
R
B
C
D
E
r
f
38 - 75
56 - 108
80 - 151
112 - 216
µA
IF=20mA
VR=5V
IF=4mA,Vce=5V
Ic=100µA,Vce=2V
RL=1K,d=1mm
IF=4mA,Vce=5V
*1 THE CONDITION AND ARRANGEMENT OF THE REFLECTIVE OBJECT ARE SHOWN AS FOLLOWING .
*2 WITHOUT REFLECTIVE OBJECT.
TEST CONDITION AND ARRANGEMENT FOR COLLECTOR CURRENT
Al refletive
2 mm-thick glass
Typical Optical-Electrical Characteristic Curves
60
(mA)
50
F
40
30
20
10
0
Forward Current I
-25 0 25 50 75 100
Ambient Temperature TA (oC)
Fig.1 forward Current VS
50
(mA)
40
F
30
20
10
0
Forward Current I
0 0.5 1 1.5
Forward Voltage VF (V)
Fig.3 Forward Current VS
.
120
P
100
P
, P
ad
80
60
40
20
0
Power Dissipation (mW)
-25 0 25 50 75 100
C
Ambient Temperature TA ( oC )
Fig.2 Power Dissipation vs.
Ambient Temperature
600
A)
µ
Collector Current Ic (
Vce=5V
500
400
300
200
100
0
0 5 10 15 20
Forward Current IF (mA)
Fig.4 Collector Current vs.
Forward Current
Unity Opto Technology Co., Ltd.
02/04/2002
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