GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-824L3
Description Package Dimensions
The MIE-824L3 is an infrared emitting diode utilizing
GaAs with AlGaAs window coation chip technology.
It is molded in water clear plastic package.
SEE NOTE 2
Features
l High radiant power and high radiant intesity
l Standard T-1 3/4 ( φ 5mm) package
l Peak wavelength λ
l Good spectral matching to si-photodetector
l Radiant angle: 80°
= 940 nm
p
0.50 TYP.
(.020)
A
φ5.00
(.197)
2.54 NOM.
(.100)
SEE NOTE 3
4.30
(.169)
1.00
(.039)
23.40 MIN.
(.921)
1.00MIN.
(.039)
C
Unit: inches
5.80
(.228)
FLAT DENOTES CATHODE
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 120 mW
Peak Forward Current 1 A
Continuous Forward Current 100 mA
Reverse Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
@ TA=25oC
-55oC to +100oC
-55oC to +100oC
260oC for 5 seconds
Unity Opto Technology Co., Ltd.
02/04/2002
MIE-824L3
Optical-Electrical Characteristics
VS. FORWARD CURRENT
FIG.6 RADIANTION DIAGRAM
60°
Parameter Test Conditions Symbol Min. Typ . Max. Unit
Radiant Intensity
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle
IF=20mA
IF=50mA V
VR=5V I
IF=20mA
IF=20mA
IF=20mA 2θ
Ie 0.2 0.7 - mW/sr
F
R
λ
∆λ
1/2
Typical Optical-Electrical Characteristic Curves
1
@ TA=25oC
- 1.32 1.50 V
- - 100
- 940 - nm
- 50 - nm
- 120 - deg .
100
80
µA
0.5
Relative Radiant Intensity
0
780 880 980
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
100
80
60
40
20
Forward Current (mA)
0
0.8 1.2 1.6 2.0 2.4 2.8
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
5
4
60
40
20
Forward Current IF (mA)
0
-50 -25 0 25 50 75 100
Ambient Temperature TA (oC)
FIG.2 FORWARD CURRENT VS.
3.0
=20mA
2.5
F
2.0
1.5
1.0
0.5
0.0
-40 -20 0 20 40 60
Output Power To Value I
Ambient Temperature TA(oC)
FIG.4 RELATIVE RADIANT INTENSITY
VS. AMBIENT TEMPERATURE
0° 10° 20°
30°
Unity Opto Technology Co., Ltd.
3
=20mA
F
2
1
Value at I
Output Power Relative To
0
0 20 40 60 80 100
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
1.0
0.9
0.8
Relative Radiant Intensity
0.5 0.3 0.1 0.2 0.4 0.6
40°
50°
70°
80°
90°
02/04/2002
Loading...