Unity Opto Technology MIE-814A2 Datasheet

AlGaAs/GaAs T-1 3/4 PACKAGE

INFRARED EMITTING DIODE

MIE-814A2

Description Package Dimensions

A

C

The MIE-814A2 is an infrared emitting diode utilizing
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.

6.70±0.20

(.264±.008)

1.30 max
(.051)

Unit: mm ( inches )

φ5.00±0.20
(.197±.008)

Features

l High radiant power and high radiant intesity
l Suitable for DC and high pulse current operation
l Peak wavelength λ
l Good spectral matching to Si-Photodetector

=940 nm

P

Absolute Maximum Ratings

Parameter Maximum Rating Unit
Power Dissipation 150 mW
Peak Forward Current 1 A

2.00- 0.50

(.079) (.020)

2.00±1.00

(.079±.039)

2.54NOM.
(.100)

NOTES :

1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2. Protruded resin under flange is 1.5 mm (.059") max.

3. Lead spacing is measured where the leads emerge from the package.

28 typ

(1.102)

@ TA=25oC

Continuous Forward Current 100 mA
Reverse Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature

-55oC to +100oC

-55oC to +100oC

260oC for 5 seconds

Unity Opto Technology Co., Ltd.

02/04/2002

MIE-814A2

Optical-Electrical Characteristics

Relative Radiant Intensity

70

VS. AMBIENT TEMPERATURE

Output Power Relative To

F

VS. FORWARD CURRENT

60

Parameter Test Conditions Symbol Min. Typ . Max. Unit
Radiant Intensity
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle

IF=20mA
IF=50mA V
VR=5V I
IF=20mA
IF=20mA
IF=20mA 2 θ

Ie 1 2 mW/sr

∆λ

Typical Optical-Electrical Characteristic Curves

1

0.5

0

840 940 1040

Wavelength (nm)

FIG.1 SPECTRAL DISTRIBUTION

100

80
60
40
20

Forward Current (mA)

0

0 1.2 1.6 2.0 2.4 2.8

Forward Voltage (V)

FIG.3 FORWARD CURRENT VS.

FORWARD VOLTAGE

@ TA=25oC

F

R

λ

1.32 1.45 V
100

µA

940 nm

50 nm

1/2

100

90
80

60
50

Forward Current IF (mA)

0

FIG.2 FORWARD CURRENT VS.

3.0

=20mA

2.5

F

2.0

1.5

1.0

0.5

0.0

Output Power To Value I

FIG.4 RELATIVE RADIANT INTENSITY

50 deg .

-55 -25 0 25 50 75 100 125

Ambient Temperature TA (oC)

AMBIENT TEMPERATURE

-40 -20 0 20 40 60

Ambient Temperature TA (oC)

5
4

=20mA

3
2
1

Value at I

0

0 20 40 60 80 100

1.0

0.9

0.8

Relative Radiant Intensity

0.5 0.3 0.1 0.2 0.4 0.6

Forward Current (mA)

FIG.5 RELATIVE RADIANT INTENSITY

Unity Opto Technology Co., Ltd.

FIG.6 RADIATION DIAGRAM

0° 10° 20°

30°

40°
50°

70°
80°

90°

02/04/2002