GaAlAs T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-534L3
Description Package Dimensions
p
s pulse)
Unite: mm ( inches )
(.100)
SEE NOTE 2
FLAT DENOTES CATHODE
(.230)
(.215)
The MIE-534L3 is an infrared emitting diode in GaAlAs
on GaAlAs technology molded in water clear plastic
package .
Features
l Suitable for DC and high pulse current operation
l Standard T-1 3/4 ( φ 5mm ) package
l Peak wavelength λ
l Good spectral matching to si-photodetector
l Radiation angle : 30°
= 880 nm
0.50 TYP.
(.020)
A
φ5.05
(.200)
2.54NOM.
SEE NOTE 3
7.62
(.300)
1.00
(.040)
23.40 MIN
(.920)
1.00MIN.
(.040)
C
5.47
5.90
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 120 mW
Peak Forward Current(300pps,10µ
Continuos Forward Current 100 mA
Reverse Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
NOTES :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
'@ TA=25oC
1 A
o
C to +100oC
o
C to +100oC
o
C for 5 seconds
Unity Opto Technology Co., Ltd.
11/20/2000
MIE-534L3
Optical-Electrical Characteristics
1/2
0.5 0.3 0.1 0.2 0.4 0.6
VS. AMBIENT TEMPERATURE
VS. FORWARD CURRENT
FIG.5 RADIATION DIAGRAM
Forward Current (mA)
Parameter Test Conditions Symbol Min. Typ. Max. Unit
Radiant Intensity IF=20mA Ie 2.8 mW/sr
Forward Voltage IF=50mA V
Reverse Current VR=5V I
Peak Wavelength IF=20mA
Spectral Bandwidth IF=20mA ∆λ 80 nm
Half View Angle IF=20mA 2θ
Typical Optical-Electrical Characteristic Curves
1
0.5
0
Relative Radiant Intensity
780 880 980
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
F
R
λp
@ TA=25oC
1.4 1.7 V
100
880 nm
30 deg .
60
50
40
30
20
10
Forward Current IF (mA)
0
-55 -25 0 25 50 75 100 125
Ambient Temperature TA (oC)
FIG.2 FORWARD CURRENT VS.
µA
100
80
60
40
20
0
0.8 1.2 1.6 2 2.4 2.8
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
5
4
3
=20mA
F
2
1
Value at I
Output Power Relative To
0
0 20 40 60 80 100
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
3
=20mA
F
2.5
2
1.5
1
0.5
0
-40 -20 0 20 40 60
Output Power To Value I
Ambient Temperature TA (oC)
FIG.4 RELATIVE RADIANT INTENSITY
0° 10° 20°
30°
40°
1.0
0.9
0.8
Relative Radiant Intensity
50°
60°
70°
80°
90°
Unity Opto Technology Co., Ltd.
11/20/2000
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