AlGaAs/GaAs HIGH POWER T-1 3/4 PACKAGE
INFRARED EMITTING DIODE
MIE-524A4
Description Package Dimensions
p
s pulse)
A
FLAT DENOTES CATHODE
(.230)
The MIE-524A4 is an infrared emitting diode utilizing
φ5.05
(.200)
Unit : mm (inches )
GaAs with AlGaAs window coating chip technology.
It is molded in water clear plastic package.
7.62
(.300)
1.00
(.040)
Features
l High radiant power and high radiant intensity
l Suitable for DC and high pulse current operation
l Standard T-1 3/4 ( φ 5mm ) package, radiation angle : 20°
l Peak wavelength λ
= 940 nm
0.50 TYP.
(.020)
2.54
(.100)
23.40 MIN.
(.920)
1.00MIN
(.040)
5.47
(.215)
5.90
l Good spectral matching to si-photodetector
Absolute Maximum Ratings
Parameter Maximum Rating Unit
Power Dissipation 120 mW
Peak Forward Current(300pps,10µ
Continuos Forward Current 100 mA
Reverse Voltage 5 V
Operating Temperature Range
Storage Temperature Range
Lead Soldering Temperature
C
Notes :
1. Tolerance is ± 0.25 mm (.010") unless otherwise noted.
2. Protruded resin under flange is 1.5 mm (.059") max.
3. Lead spacing is measured where the leads emerge from the package.
'@ TA=25oC
1 A
o
C to +100oC
o
C to +100oC
o
C for 5 seconds
Unity Opto Technology Co., Ltd.
11/17/2000
MIE-524A4
Optical-Electrical Characteristics
Relative Radiant Intensity
AMBIENT TEMPERATURE
0° 10° 20°
60°
Parameter Test Conditions Symbol Min. Typ . Max. Unit
Radiant Intensity
Forward Voltage
Reverse Current
Peak Wavelength
Spectral Bandwidth
View Angle
IF=20mA
IF=50mA V
VR=5V I
IF=20mA
IF=20mA
IF=20mA 2θ
Typical Optical-Electrical Characteristic Curves
1
0.5
0
840 940 1040
Wavelength (nm)
FIG.1 SPECTRAL DISTRIBUTION
@ TA=25oC
Ie 4.0 mW/sr
1.30 1.50 V
100
940 nm
50 nm
20 deg .
-55 -25 0 25 50 75 100 125
Ambient Temperature TA (oC)
FIG.2 FORWARD CURRENT VS.
µA
λp
∆λ
F
R
1/2
100
90
80
70
60
50
Forward Current IF (mA)
0
100
80
60
40
20
Forward Current (mA)
0
0 1.2 1.6 2.0 2.4 2.8
Forward Voltage (V)
FIG.3 FORWARD CURRENT VS.
FORWARD VOLTAGE
5
4
=20mA
3
F
2
1
Value at I
Output Power Relative To
0
0 20 40 60 80 100
Forward Current (mA)
FIG.5 RELATIVE RADIANT INTENSITY
VS. FORWARD CURRENT
3
2.5
2
1.5
1
0.5
0
-40 -20 0 20 40 60
Output Power To Value IF=20mA
Ambient Temperature TA (oC)
FIG.4 RELATIVE RADIANT INTENSITY
1.0
0.9
0.8
Relative Radiant Intensity
0.5 0.3 0.1 0.2 0.4 0.6
FIG.6 RADIATION DIAGRAM
30°
40°
50°
70°
80°
90°
11/17/2000
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