UNISONIC TECHNOLOGIES CO BC846, BC850 Technical data

查询BC846-A-AE3-R供应商
UNISONIC TECHNOLOGIES CO., LTD
BC846-BC850
NPN SILICON TRANSISTOR
SWITCHING AND AMPLIFIER APPLICATION
FEATURES
* Suitable for automatic insertion in thick and thin-film circuits. * Complement to BC856 … BC860
ORDERING INFORMATION
3
1
2
SOT-23
3
1
2
SOT-323
*Pb-free plating product number:
BC846L/BC847L/BC848L/BC849L/BC850L
Order Number Pin Assignment
Normal Lead Free Plating BC846-x-AE3-R BC846L-x-AE3-R SOT-23 E B C Tape Reel BC847-x-AE3-R BC847L-x-AE3-R SOT-23 E B C Tape Reel BC848-x-AE3-R BC848L-x-AE3-R SOT-23 E B C Tape Reel BC849-x-AE3-R BC849L-x-AE3-R SOT-23 E B C Tape Reel BC850-x-AE3-R BC850L-x-AE3-R SOT-23 E B C Tape Reel BC846-x-AL3-R BC846L-x-AL3-R SOT-323 E B C Tape Reel BC847-x-AL3-R BC847L-x-AL3-R SOT-323 E B C Tape Reel BC848-x-AL3-R BC848L-x-AL3-R SOT-323 E B C Tape Reel BC849-x-AL3-R BC849L-x-AL3-R SOT-323 E B C Tape Reel BC850-x-AL3-R BC850L-x-AL3-R SOT-323 E B C Tape Reel
BC846L-x-AE3-R
(1)P ac king T y pe (2)P ac kage T y pe (3)Rank (4)Lead Plating
Package
(1) R: Tape Reel (2) AE3: SOT-2 3, AL3: SOT-323 (3) x: refer to Classification of h (4) L: Lead F r ee Plating, Blank: P b/ S n
1 2 3
Packing
FE
MARKING
BC846
BC847
BC848
BC849 BC850
8A
: Rank Code,refer to Classification of h
www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd
8B
8C
FE
8D
8E
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QW-R206-027,C
BC846-BC850
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25℃, unless otherwise specified)
PARAMETER SYMBOL VALUE UNIT
BC846 80 V
Collector-Base Voltage
BC847 / BC850 50 V BC848 / BC849
V
CBO
30 V
BC846 65 V
Collector-Emitter Voltage
BC847 / BC850 45 V BC848 / BC849
V
CEO
30 V
BC846 / BC847 6 V
Emitter-Base Voltage
BC848 / BC849 / BC850
V
EBO
5 V Collector Current (DC) Ic 100 mA Collector Dissipation
SOT-23 310 mW SOT-323
PD
200 mW Junction Temperature TJ +150 °C Storage Temperature T
-40 ~ +150
STG
°
C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-Off Current I
VCB=30V, IE=0 15 nA
CBO
DC Current Gain hFE VCE=5.0V, Ic=2.0mA 110 800 Collector-Emitter Saturation Voltage V
Collector-Base Saturation Voltage V
CE(SAT)
BE(SAT)
Base-Emitter On Voltage V
Current Gain Bandwidth Product fT
Ic=10mA,IB=0.5mA 90 250 mV Ic=100mA,IB=5.0mA 200 600 mV Ic=10mA,IB=0.5mA 700 mV Ic=100mA,IB=5.0mA 900 mV VCE=5.0V,Ic=2.0mA 580 660 700 mV
BE(ON)
VCE=5.0V,Ic=10mA 720 mV V
=5.0V,Ic=10mA
CE
f=100MHz
300 MHz
Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz 3.5 6 pF Input Capacitance Cib VEB=0.5V, IC=0, f=1.0MHz 9 pF
Noise Figure
BC846/BC847/BC848 2 10 dB BC849/BC850 1.2 4 dB BC849 1.4 4 dB BC850
NF
V
=5V, Ic=200µA,
CE
f=1KHz, R V
=5V, IC=200µA,
CE
R
=2KΩ, f=30~15000Hz
G
=2KΩ
G
1.4 3 dB
CLASSIFICATION OF hFE
RANK A B C
RANGE 110-220 200-450 420-800
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
QW-R206-027,C
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