TS TSH251CT, TSH251CX Schematic [ru]

TO-92S

TSOT-23

OUT

DD

/OUT

OUT

STG

o

o

P

in

Definition

:

Pin

Definition

:

TSH251

Micropower CMOS Output Hall Effect Switch

1. VCC

2. GND

3. Output

Description

TSH251 Hall-effect sensor is a temperature stable, stress-resistant, Low Tolerance of Sensitivity micro-power
switch. Superior high-temperature performance is made possible through a dynamic offset cancellation that
utilizes chopper-stabilization. This method reduces the offset voltage normally caused by device over molding,
temperature dependencies, and thermal stress. TSH251 is special made for low operation voltage, 1.65V, to
active the chip which is includes the following on a single silicon chip: voltage regulator, Hall voltage generator,
small-signal amplifier, chopper stabilization, Schmitt trigger, CMOS output driver. Advanced CMOS wafer
fabrication processing is used to take advantage of low-voltage requirements, component matching, very low
input-offset errors, This device requires the presence of omni-polar magnetic fields for operation.

1. VCC

2. Output

3. GND

Features

● CMOS Hall IC Technology

● Strong RF noise protection

● 1.65 to 3.5V for battery-powered applications

● Omni polar, output switches with absolute value of

North or South pole from magnet

● Operation down to 1.65V, Micropower consumption

● High Sensitivity for reed switch replacement

applications

● Low sensitivity drift in crossing of Temp. range

● Ultra Low power consumption at 5uA (Avg)

● High ESD Protection, HBM > ±4KV( min )

● Totem-pole output

Absolute Maximum Rating

Characteristics

Supply voltage
Output Voltage
Reverse Voltage
Magnetic flux density
Output current
Operating temperature range

Storage temperature range
Maximum Junction Temp

Thermal Resistance - Junction to Ambient

Thermal Resistance - Junction to Case

Package Power Dissipation

Note: Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute maximum-

rated conditions for extended periods may affect device reliability.

(Ta = 25oC unless otherwise noted)

TO-92S
TSOT-23
TO-92S
TSOT-23
TO-92S
TSOT-23

Ordering Information

Part No. Package Packing

TSH251CT B0G TO-92S 1Kpcs / Bulk Bag
TSH251CX RFG TSOT-23 3Kpcs / 7” Reel

Note: “G” denote for Halogen Free Product

Application

● Solid state switch

● Handheld Wireless Handset Awake Switch

(Flip Cell/PHS Phone/Note Book/Flip Video Set)

● Lid close sensor for battery powered devices

● Magnet proximity sensor for reed switch

replacement in low duty cycle applications

● Water Meter, Floating Meter

Limit Value

4.5

4.5

-0.3

Unlimited

1

-40 to +85

-65 to +150
150
206
543
148
410
606
230

V

VDD

V

I

T

OPR

T

TJ

θJA

θJC

PD

Unit

V
V
V

Gauss

mA

o

C
C

C

o

C/W

o

C/W

mW

1/8

Version: A13

TSH251

Micropower CMOS Output Hall Effect Switch

Block Diagram

Note: Static sensitive device; please observe ESD precautions. Reverse VDD protection is not included. For

reverse voltage protection, a 100Ω resistor in series with VDD is recommended.

Typical Application Circuit

C1：10nF
C2：100pF

Electrical Specifications (

Parameters Test Conditions Min Typ Max Units

Supply Voltage Operating 1.65 -- 3.5 V

Supply Current

Output Leakage Current Output off -- -- 1 uA
Output High Voltage IOUT=0.5mA(Source) VDD-0.2

DC Operating Parameters：TA=+25oC,VDD=1.8V)

Awake State -- 1.4 3 mA
Sleep State -- 3.6 7 µA
Average -- 5 10 µA

-- -- V

Output Low Voltage IOUT=0.5mA(Sink) -- -- 0.2 V
Awake mode time Operating -- 40 80 uS
Sleep mode time Operating -- 40 80 mS
Duty Cycle -- 0.1 -- %
Electro-Static Discharge HBM 4 KV

2/8

Version: A13

Micropower CMOS Output Hall Effect Switch

Magnetic Specifications (TSH251CT)

Parameter Symbol

B

S pole to branded side, B > BOP, Vout On 30 55 Gauss

Operating

Point

Release

Point

Hysteresis

Note: 1G (Gauss) = 0.1mT (millitesta)

OPS

B

N pole to branded side, B > BOP, Vout On -55 -30 Gauss

OPN

B

S pole to branded side, B < BRP, Vout Off 10 20 Gauss

RPS

B

N pole to branded side, B < BRP, Vout Off -20 -10 Gauss

RPN

B

|BOPx - BRPx| 10 Gauss

HYS

Magnetic Specifications (TSH251CX)

Parameter Symbol

B

N pole to branded side, B > BOP, Vout On 30 55 Gauss

Operating

Point

Release

Point

Hysteresis

Note: 1G (Gauss) = 0.1mT (millitesta)

OPS

B

S pole to branded side, B > BOP, Vout On -55 -30 Gauss

OPN

B

N pole to branded side, B < BRP, Vout Off 10 20 Gauss

RPS

B

S pole to branded side, B < BRP, Vout Off -20 -10 Gauss

RPN

B

|BOPx - BRPx| 10 Gauss

HYS

Test Conditions Min. Typ. Max. Units

Test Conditions Min. Typ. Max. Units

TSH251

Output Behavior versus Magnetic Pole

DC Operating Parameters: TA = -40 to 125oC, VCC = 1.8V ~ 6V

Parameter Test condition OUT

South pole

Null or weak magnetic field

North pole

B<Bop[(-55)~(-10)] Low

B=0 or B < BRP High

B>Bop(55~10) Low

TO-92S SOT-23

3/8

Version: A13