Transforming Technologies Ohm Metrics SRM500K Instruction Manual
Ohm Metrics™
Surface Resistance Testing Kit
Model SRM500K
Instruction Manual
Contents
1 Description
SRM500K 1
Ohm Metrics 2
2 Operation
Power Option 2
Set Up 2
Parallel Probe Resistivity Testing 3
Probe Resistivity Testing 4
Resistance Between Two Points (RTT)
Surface to Ground Resistance (RTG)
5
4
3 Specifications 6
4 Service and Warranty 8
Description
Ohm Metrics Surface Resistance Meter:
SRM 500K
The SRM500K is a digital surface resistance test kit designed
to test all conductive, anti-static and static dissipative surfaces for electrical resistivity/resistance according to EOS/
ESD, CECC, ANSI, ASTM test procedures. It accurately and
quickly measures resistance between two points (RTT) and
surface to ground resistance (RTG). Suitable for factory audits and test lab evaluations, the Ohm Metrics SRM500K also
measures ambient temperature and humidity.
Features include:
10v and 100v range voltage selection
Automatic zeroing and power shut off
Two 5 lb disk probes
Built in resistivity probes
Carrying case
The SRM500k meets periodic test requirements per Compliance Verification ESD TR53 and conforms to ANSI/EOS/ESD
(S4.1, S7.1, S12.1, S2.1).
1
About Ohm Metrics
Ohm Metrics test and measurement products,
from Transforming Technologies, are useful, reliable
tools for characterizing and identifying the electrical resistance of materials and the performance of personal
grounding products.
All Ohm Metrics products are designed to support
ESDA Compliance Verification TR53.
All Ohm Metrics products can be calibrated.
All Ohm Metrics test and measurement products are
warranted for 1 full year.
Power Options
The SRM500K can be powered by a 9 volt battery or by
the included 120 volt AC adapter.
Set Up
The SRM500K has two methods to measure resistivity:
Parallel Probe Resistivity (PPR) method and Probe Resistivity (CRP) method. The PPR method uses built in
probes on the back of the SRM500 and the CRP method
uses two 5 lb probes attached to the meter by lead
wires.
2
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