查询TLFGE50T供应商
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
TOSHIBA InGaAℓP LED
TLRE50T,TLRME50T,TLSE50T,TLOE50T,TLYE50T,
TLPYE50T,TLGE50T,TLFGE50T,TLPGE50T
Panel Circuit Indicators
· φ3 mm package
· InGaAℓP technology
· All plastic mold type
· Transparent lens
· Line-up: 6 colors (red, orange, yellow, pure yellow, green and pure
green)
· High intensity light emission
· Excellent low current light output
· Applications: message boards, security devices and dashboard
displays
Line-up
Unit: mm
Product Name Color Material
TLRE50T Red
TLRME50T Red
TLSE50T Red
TLOE50T Orange
TLYE50T Yellow
TLPYE50T Pure Yellow
TLGE50T Green
TLFGE50T Green
TLPGE50T Pure Green
PInGaAl
JEDEC ―
JEITA ―
TOSHIBA 4-3E1A
Weight: 0.14 g
1
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
Maximum Ratings
Product Name
TLRE50T 50 4 120
TLRME50T 50 4 120
TLSE50T 50 4 120
TLOE50T 50 4 120
TLYE50T 50 4 120
TLPYE50T 50 4 120
TLGE50T 50 4 120
TLFGE50T 50 4 120
TLPGE50T 50 4 120
(Ta ==== 25°C)
Forward Current
I
(mA)
F
Reverse Voltage
VR (V)
Power Dissipation
PD (mW)
Operating
Temperature
(°C)
T
opr
-40~100 -40~120
Storage
Temperature
T
stg
Electrical and Optical Characteristics
Product Name
TLRE50T 630 (644) 20 20 850 1800 20 1.9 2.4 20 50 4
TLRME50T 626 (636) 23 20 850 2200 20 1.9 2.4 20 50 4
TLSE50T 613 (623) 20 20 1530 3500 20 1.9 2.4 20 50 4
TLOE50T 605 (612) 20 20 1530 4500 20 2.0 2.4 20 50 4
TLYE50T 587 (590) 17 20 1530 3500 20 2.0 2.4 20 50 4
TLPYE50T 580 (583) 14 20 850 2500 20 2.0 2.4 20 50 4
TLGE50T 571 (574) 17 20 476 1500 20 2.0 2.4 20 50 4
TLFGE50T 565 (568) 15 20 272 1000 20 2.0 2.4 20 50 4
TLPGE50T 558 (562) 14 20 153 600 20 2.1 2.4 20 50 4
Unit nm mA mcd mA V mA mA V
Typ. Emission Wavelength
l
lP Dl IF
d
(Ta ==== 25°C)
Luminous Intensity
Min Typ. I
I
V
Typ. Max IF Max VR
F
Forward Voltage
VF
Reverse Current
Precautions
(°C)
IR
Please be careful of the following:
· Soldering temperature: 260°C max, soldering time: 3 s max
(soldering portion of lead: up to 2 mm from the body of the device)
· If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to
the resin. Soldering should be performed after lead forming.
· This visible LED lamp also emits some IR light.
If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light.
2
2002-01-17
TLRE50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
100
(mA)
F
Forward current I
Ta = 25°C
50
30
10
5
3
– VF
I
F
1
1.6
1.7 1.8 1.9 2.0 2.1 2.2 2.3
Forward voltage VF (V)
(mcd)
V
Luminous intensity I
10000
1000
100
10
I
– IF
V
Ta = 25°C
101
Forward current IF (mA)
100
3
V
I
V
– Tc
1
Relative luminous intensity I
0.5
0.3
0.1
-20 80
0
20
40
Case temperature Tc (°C)
60
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
Ta = 25°C
0.8
0.6
0.4
0.2
Relative luminous intensity
0
700
680 660 640 620600580
Wavelength l (nm)
Radiation pattern
Ta = 25°C
I
– Ta
80
F
50°
60°
70°
80°
90°
40°
30°
20°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.00.80.6 0.4 0.2 0
(mA)
F
60
40
20
Allowable forward current I
0
0
40 60 80
100
12020
Ambient temperature Ta (°C)
3
2002-01-17
TLRME50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
100
(mA)
F
Forward current I
Ta = 25°C
50
30
10
5
3
– VF
I
F
1
1.6
1.7 1.8 1.9 2.0 2.1 2.2 2.3
Forward voltage VF (V)
(mcd)
V
Luminous intensity I
10000
1000
100
10
I
– IF
V
Ta = 25°C
101
Forward current IF (mA)
100
10
V
5
3
I
V
– Tc
1
Relative luminous intensity I
0.5
0.3
0.1
-20 80
0
20
40
Case temperature Tc (°C)
60
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
Ta = 25°C
0.8
0.6
0.4
0.2
Relative luminous intensity
0
700
680 660 640 620600580
Wavelength l (nm)
Radiation pattern
Ta = 25°C
I
– Ta
80
F
50°
60°
70°
80°
90°
40°
30°
20°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.00.80.6 0.4 0.2 0
(mA)
F
60
40
20
Allowable forward current I
0
0
40 60 80
100
12020
Ambient temperature Ta (°C)
4
2002-01-17
TLSE50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
100
(mA)
F
Forward current I
Ta = 25°C
50
30
10
5
3
– VF
I
F
1
1.6
1.7 1.8 1.9 2.0 2.1 2.2 2.3
Forward voltage VF (V)
(mcd)
V
Luminous intensity I
10000
1000
100
10
I
– IF
V
Ta = 25°C
101
Forward current IF (mA)
100
3
V
I
V
– Tc
1
Relative luminous intensity I
0.5
0.3
0.1
-20 80
0
20
40
Case temperature Tc (°C)
60
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
Ta = 25°C
0.8
0.6
0.4
0.2
Relative luminous intensity
0
680
660 640 620 600580560
Wavelength l (nm)
Radiation pattern
Ta = 25°C
I
– Ta
80
F
50°
60°
70°
80°
90°
40°
30°
20°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.00.80.6 0.4 0.2 0
(mA)
F
60
40
20
Allowable forward current I
0
0
40 60 80
100
12020
Ambient temperature Ta (°C)
5
2002-01-17
TLOE50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
100
(mA)
F
Forward current I
Ta = 25°C
50
30
10
5
3
– VF
I
F
1
1.6
1.7 1.8 1.9 2.0 2.1 2.2 2.3
Forward voltage VF (V)
(mcd)
V
Luminous intensity I
30000
10000
1000
100
I
– IF
V
Ta = 25°C
101
Forward current IF (mA)
100
3
V
I
V
– Tc
1
Relative luminous intensity I
0.5
0.3
0.1
-20 80
0
20
40
Case temperature Tc (°C)
60
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
Ta = 25°C
0.8
0.6
0.4
0.2
Relative luminous intensity
0
660
640 620 600 580560540
Wavelength l (nm)
Radiation pattern
Ta = 25°C
I
– Ta
80
F
50°
60°
70°
80°
90°
40°
30°
20°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.00.80.6 0.4 0.2 0
(mA)
F
60
40
20
Allowable forward current I
0
0
40 60 80
100
12020
Ambient temperature Ta (°C)
6
2002-01-17
TLYE50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
100
(mA)
F
Forward current I
Ta = 25°C
50
30
10
5
3
– VF
I
F
1
1.6
1.7 1.8 1.9 2.0 2.1 2.2 2.3
Forward voltage VF (V)
(mcd)
V
Luminous intensity I
10000
1000
100
10
I
– IF
V
Ta = 25°C
101
Forward current IF (mA)
100
3
V
I
V
– Tc
1
Relative luminous intensity I
0.5
0.3
0.1
-20 80
0
20
40
Case temperature Tc (°C)
60
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
Ta = 25°C
0.8
0.6
0.4
0.2
Relative luminous intensity
0
660
640 620 600 580560540
Wavelength l (nm)
Radiation pattern
Ta = 25°C
I
– Ta
80
F
50°
60°
70°
80°
90°
40°
30°
20°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.00.80.6 0.4 0.2 0
(mA)
F
60
40
20
Allowable forward current I
0
0
40 60 80
100
12020
Ambient temperature Ta (°C)
7
2002-01-17
TLPYE50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
100
(mA)
F
Forward current I
Ta = 25°C
50
30
10
5
3
– VF
I
F
1
1.7 2.1
1.8 1.9 2.2
2.0 1.6
Forward voltage VF (V)
2.3
(mcd)
V
Luminous intensity I
10000
1000
100
20
I
– IF
V
Ta = 25°C
101
Forward current IF (mA)
100
10
V
5
3
I
V
– Tc
Relative luminous intensity – Wavelength
1.0
0.8
IF = 20 mA
Ta = 25°C
1
0.5
0.3
Relative luminous intensity I
0.1
Case temperature Tc (°C)
20 -20
0 40 60
80
0.6
0.4
0.2
Relative luminous intensity
0
580540
560 600 620 640
660
Wavelength l (nm)
Radiation pattern
Ta = 25°C
I
– Ta
80
F
(mA)
F
60
60°
70°
80°
90°
30°
40°
50°
20°
10°
10°
20°
30°
40°
50°
60°
1.00.80.6 0.4 0.2 0
70°
80°
90°
40
20
Allowable forward current I
0
0
40 60 80
100
12020
Ambient temperature Ta (°C)
0°
8
2002-01-17
TLGE50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
100
(mA)
F
Forward current I
Ta = 25°C
50
30
10
5
3
– VF
I
F
1
1.6
1.7 1.8 1.9 2.0 2.1 2.2 2.3
Forward voltage VF (V)
I
– IF
5000
Ta = 25°C
1000
(mcd)
V
100
V
Luminous intensity I
10
101
100
Forward current IF (mA)
10
V
5
3
I
V
– Tc
Relative luminous intensity I
1
0.5
0.3
0.1
-20 80
0
20
40
Case temperature Tc (°C)
60
Relative luminous intensity – Wavelength
1.0
IF = 20 mA
Ta = 25°C
0.8
0.6
0.4
0.2
Relative luminous intensity
0
640
620 600 580 560540520
Wavelength l (nm)
Radiation pattern
Ta = 25°C
I
– Ta
80
F
50°
60°
70°
80°
90°
40°
30°
20°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.00.80.6 0.4 0.2 0
(mA)
F
60
40
20
Allowable forward current I
0
0
40 60 80
100
12020
Ambient temperature Ta (°C)
9
2002-01-17
TLFGE50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
100
Ta = 25°C
50
30
(mA)
F
10
5
3
– VF
I
F
Forward current I
1
1.7 2.1
1.8 1.9 2.2
Forward voltage VF (V)
2.0 1.6
2.3
I
– IF
5000
Ta = 25°C
1000
(mcd)
V
100
V
Luminous intensity I
10
101
100
Forward current IF (mA)
10
V
5
3
I
V
– Tc
Relative luminous intensity – Wavelength
1.0
0.8
IF = 20 mA
Ta = 25°C
1
0.5
0.3
Relative luminous intensity I
0.1
Case temperature Tc (°C)
20 -20
0 40 60
80
0.6
0.4
0.2
Relative luminous intensity
0
560520
540 580 600 620
640
Wavelength l (nm)
Radiation pattern
Ta = 25°C
I
– Ta
80
F
50°
60°
70°
80°
90°
40°
30°
20°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.00.80.6 0.4 0.2 0
(mA)
F
60
40
20
Allowable forward current I
0
0
40 60 80
100
12020
Ambient temperature Ta (°C)
10
2002-01-17
TLPGE50T
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
100
(mA)
F
Forward current I
Ta = 25°C
50
30
10
5
3
– VF
I
F
1
1.6
1.7 1.8 1.9 2.0 2.1 2.2 2.3
Forward voltage VF (V)
(mcd)
V
Luminous intensity I
10000
1000
100
10
I
– IF
V
Ta = 25°C
101
Forward current IF (mA)
100
10
V
5
3
I
V
– Tc
1
Relative luminous intensity I
0.5
0.3
0.1
-20 80
0
20
40
Case temperature Tc (°C)
60
Relative luminous intensity – Wavelength
1.0
0.8
0.6
0.4
0.2
Relative luminous intensity
0
IF = 20 mA
Ta = 25°C
640
620 600 580 560540520
Wavelength l (nm)
Radiation pattern
Ta = 25°C
I
– Ta
80
F
50°
60°
70°
80°
90°
40°
30°
20°
10°
0°
10°
20°
30°
40°
50°
60°
70°
80°
90°
1.00.80.6 0.4 0.2 0
(mA)
F
60
40
20
Allowable forward current I
0
0
40 60 80
100
12020
Ambient temperature Ta (°C)
11
2002-01-17
TL(RE,RME,SE,OE,YE,PYE,GE,FGE,PGE)50T
RESTRICTIONS ON PRODUCT USE
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
000707EAC
· The information contained herein is subject to change without notice.
12
2002-01-17
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