TOSHIBA TLP630 Technical data

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TOSHIBA Photocoupler GaAs IRed & Photo−Transistor

TLP630

TLP630

Programmable Controllers

AC / DC−Input Module

Telecommunication

The TOSHIBA TLP630 consists of a photo−transistor optically coupled to
two gallium arsenide infrared emitting diode connected inverse parallel
in a six lead plastic DIP package.

• Collector−emitter voltage: 55V min.

• Current transfer ratio: 50% min.

Rank GB: 100% min.

• Isolation voltage: 5000Vrms min.

• UL recognized: UL1577 file no. E67349

Unit in mm

TOSHIBA 11−7A8

Weight: 0.4g

Pin Configurations(top view)

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2007-10-01

TLP630

Absolute Maximum Ratings

(Ta = 25°C)

Characteristic Symbol Rating Unit

Forward current I

Forward current derating

LED

(Ta ≥ 39°C)

Peak forward current
(100μs pulse,100pps)

Collector−emitter voltage V

Collector−base voltage V

Emitter−collector voltage V

Emitter−base voltage V

Detector

Collector current I

F(RMS)

/ °C −0.7 mA / °C

ΔI

F

I

FPT

CEO

CBO

ECO

EBO

C

60 mA

±1 A

55 V

80 V

7 V

7 V

50 mA

Power dissipation PC 150 mW

Power dissipation derating
(Ta ≥ 25°C)

Operating temperature range T

Storage temperature range T

Lead soldering temperature T

ΔP

/ °C

C

opr

stg

sol

−1.5 mW / °C

−55~100 °C

−55~125 °C

260(10s) °C

Junction temperature Tj 125 °C

Total package power dissipation PT 250 mW

Total package power dissipation
derating

Isolation voltage
(AC, 1 min., R.H. ≤ 60%)

/ °C −2.5 mW / °C

ΔP

T

BV

S

5000 V r m s

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).

Recommended Operating Conditions

Characteristic Symbol Min. Typ. Max. Unit

Supply voltage V

Forward current I

Collector current I

Operating temperature T

CC

F(RMS)

C

opr

Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the

device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.

― 5 24 V

― 16 25 mA

― 1 10 mA

−25 ― 85 °C

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TLP630

Individual Electrical Characteristics

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Forward voltage V

Forward current IF VF = 0.7V ― 2.5 10 μA

LED

Capacitance C

Collector−emitter breakdown
voltage

Emitter−collector breakdown

voltage

Collector−base breakdown
voltage

Emitter−base breakdown

voltage

Detector

Collector dark current ID(I

Collector dark current I

Capacitance

(collector to emitter)

F

T

V

(BR)CEOIC

V

(BR)ECOIE

V

(BR)CBOIC

V

(BR)EBOIE

)

CEO

VCB = 10V ― 0.1 ― nA

CBO

C

CE

Coupled Electrical Characteristics

(Ta = 25°C)

IF = 10mA 1.0 1.15 1.3 V

V = 0, f = 1MHz ― 60 ― pF

= 0.5mA 55 ― ― V

= 0.1mA 7 ― ― V

= 0.1mA 80 ― ― V

= 0.1mA 7 ― ― V

VCE = 24V ― 10 100 nA

V

= 24V, Ta = 85°C ― 2 50 μA

CE

V = 0, f = 1MHz ― 10 ― pF

(Ta = 25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Current transfer ratio IC / I

Saturated CTR IC / I

Base photo−current IPB IF = ±5mA, VCB = 5V ⎯ 10 ― μA

Collector−emitter saturation

voltage

Off−state collector current I

CTR symmetry I

(Note 1)

I

C(ratio) =

IF(IC2I

F2,

IF(IC1I

F1,

V

CE

V

CE

==

==

V

CE(sat)

C(off)

C(ratio)

5V)

5V)

F(sat)

IF = ±5mA, VCE = 5V

F

IF = ±1mA, VCE = 0.4V

IC = 2.4mA, IF = ±8mA ― ― 0.4 V

VF = ±0.7V, VCE = 24V ― 1 10 μA

I

= −5mA) /

C(IF

= +5mA) (Note 1)

I

C(IF

Rank GB

Rank GB

50 ― 600

100 ― 600

― 60 ―

30 ― ―

0.33 1 3 ―

%

%

3

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