TOSHIBA TC7MH273FK Technical data
TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic
TC7MH273FK
Octal D-Type Flip Flop with Clear
The TC7MH273FK is an advanced high speed CMOS octal
D-type flip-flop fabricated with silicon gate C
It achieves the high speed operation similar to equivalent
bipolar schottky TTL while maintaining the CMOS low power
dissipation.
Information signals applied to D inputs are transferred to the
Q outputs on the positive going edge of the clock pulse.
When the CLR input is held “L”, the Q outputs are at a low
logic level independent of the other inputs.
An input protection circuit ensures that 0 to 7 V can be applied
to the input pins without regard to the supply voltage. This
device can be used to interface 5 V to 3 V systems and two supply
systems such as battery back up. This circuit prevents device
destruction due to mismatched supply and input voltages.
Features
2
MOS technology.
Weight: 0.03 g (typ.)
TC7MH273FK
• High speed: f
• Low power dissipation: I
• High noise immunity: V
• Power down protection is provided on all inputs.
• Balanced propagation delays: t
• Wide operating voltage range: V
• Low noise: V
• Pin and function compatible with 74ALS273
= 165 MHz (typ.) (VCC = 5 V)
max
= 4 μA (max) (Ta = 25°C)
CC
= 0.8 V (max)
OLP
NIH
= V
= 28% VCC (min)
NIL
≈ t
pLH
CC (opr)
pHL
= 2~5.5 V
1
2001-10-23
TC7MH273FK
K
Pin Assignment
CLR 1
Q1
D1
D2
Q2
Q3
D3 D6
D4
Q4
10
GND
Truth Table
(top view)
2
3
4
5
6
7
8
9
IEC Logic Symbol
C
D1
D2
D3
D4
D5
D6
D7
D8
(1)
(11)
(3)
(4)
(7)
(8)
(13)
(14)
(17)
(18)
C1
1D
V
20
CC
Q8
19
D8
18
D7
17
Q7
16
Q6
15
14
D5
13
Q5
12
CK
11
CLR R
(2)
(5)
(6)
(9)
(12)
(15)
(16)
(19)
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Q8
Inputs Outputs
CLR D CK Q
L X X L Clear
H L L ⎯
H H H ⎯
H X Qn No change
X: Don’t care
System Diagram
D1 D2 D3 D4 D5 D6 D7 D8
CLR
CK
1
11
3
D
CK
4
R
Q
D
CK
2
Q1
7
R
Q
5
Q2
D
CK
Function
8
R
Q
D
CK
6
Q3
13
R
Q
D
CK
9
Q4
14
R
Q
D
CK
12
Q5
17
R
Q
D
CK
15
Q6
18
R
Q
16
Q7
D
CK
R
Q
19
Q8
2
2001-10-23
Maximum Ratings
Characteristics Symbol Rating Unit
TC7MH273FK
Supply voltage range V
DC input voltage V
DC output voltage V
Input diode current I
Output diode current I
DC output current I
DC VCC/ground current I
Power dissipation P
Storage temperature T
CC
IN
OUT
IK
OK
OUT
CC
D
stg
Recommended Operating Conditions
Characteristics Symbol Rating Unit
Supply voltage V
Input voltage V
Output voltage V
Operating temperature T
Input rise and fall time dt/dv
CC
IN
OUT
opr
Electrical Characteristics
−0.5~V
0~100 (V
0~20 (V
−0.5~7.0 V
−0.5~7.0 V
+ 0.5 V
CC
−20 mA
±20 mA
±25 mA
±75 mA
180 mW
−65~150 °C
2.0~5.5 V
0~5.5 V
0~V
CC
−40~85 °C
= 3.3 ± 0.3 V)
CC
= 5 ± 0.5 V)
CC
V
ns/V
DC Characteristics
Characteristics Symbol
“H” level
Input voltage
“L” level V
“H” level V
Output
voltage
“L” level VOL
Input leakage current I
Quiescent supply current ICC VIN = VCC or GND 5.5 ⎯ ⎯ 4.0 ⎯ 40.0 μA
VIH ⎯
⎯
IL
OH
IN
Test Condition
IOH = −50 μA
VIN = VIH
or V
IL
IOH = −4 mA 3.0 2.58 ⎯ ⎯ 2.48 ⎯
I
= −8 mA 4.5 3.94 ⎯ ⎯ 3.80 ⎯
OH
IOL = 50 μA
V
= VIH
IN
or V
IL
IOL = 4 mA 3.0 ⎯ ⎯ 0.36 ⎯ 0.44
I
= 8 mA 4.5 ⎯ ⎯ 0.36 ⎯ 0.44
OL
VIN = 5.5 V or GND 0~5.5 ⎯ ⎯ ±0.1 ⎯ ±1.0 μA
Ta = 25°C Ta = −40~85°C
(V) Min Typ. Max Min Max
V
CC
2.0 1.50 ⎯ ⎯ 1.50 ⎯
V
3.0~5.5
2.0 ⎯ ⎯ 0.50 ⎯ 0.50
3.0~5.5
2.0 1.9 2.0 ⎯ 1.9 ⎯
3.0 2.9 3.0 ⎯ 2.9 ⎯
4.5 4.4 4.5
2.0 ⎯ 0 0.1 ⎯ 0.1
3.0 ⎯ 0 0.1 ⎯ 0.1
4.5
CC
× 0.7
⎯ ⎯
⎯ 0 0.1 ⎯ 0.1
⎯ ⎯
V
× 0.3
V
CC
× 0.7
CC
⎯
⎯ 4.4 ⎯
⎯
V
CC
× 0.3
Unit
V
V
3
2001-10-23
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