TOSHIBA SSM6N15FU Datasheet

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

SSM6N15FU

SSM6N15FU

High Speed Switching Applications

Analog Switching Applications

• Small package

• Low ON resistance : R

: R

Absolute Maximum Ratings

(Q1, Q2 Common)

Characteristics Symbol Rating Unit

Drain-Source voltage V

Gate-Source voltage V

Drain current

Drain power dissipation (Ta = 25°C) PD (Note 1) 200 mW

Channel temperature Tch 150 °C

Storage temperature range T

= 4.0 Ω (max) (@VGS = 4 V)

on

= 7.0 Ω (max) (@VGS = 2.5 V)

on

(Ta = 25°C)

DS

±20 V

GSS

DC ID 100

Pulse I

200

DP

−55 to 150 °C

stg

30 V

mA

Unit: mm

JEDEC ―

JEITA ―

Note: Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).

Note 1: Total rating

Marking Equivalent Circuit

6 5 4

6 5 4

Q1

D P

1 2 3

1 2 3

(top view)

Q2

Handling Precaution

TOSHIBA 2-2J1C

Weight: 6.8 mg (typ.)

When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.

Start of commercial production

2001-02

1

2014-03-01

SSM6N15FU

)

Electrical Characteristics

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current I

Drain-Source breakdown voltage V

Drain cut-off current I

Gate threshold voltage Vth VDS = 3 V, ID = 0.1 mA 0.8 ⎯ 1.5 V
Forward transfer admittance ⎪Yfs⎪ VDS = 3 V, ID = 10 mA 25 ⎯ ⎯ mS

Drain-Source ON resistance R

Input capacitance C

Reverse transfer capacitance C

Output capacitance C

Switching time

Turn-on time t

Turn-off time t

(Ta = 25°C) (Q1, Q2 Common)

VGS = ±16 V, VDS = 0 ⎯ ⎯ ±1 μA

GSS

(BR) DSSID

DSS

DS (ON)

⎯ 7.8 ⎯ pF

iss

⎯ 3.6 ⎯ pF

rss

oss

⎯ 50 ⎯

on

off

= 0.1 mA, VGS = 0 30 ⎯ ⎯ V

VDS = 30 V, VGS = 0 ⎯ ⎯ 1 μA

ID = 10 mA, VGS = 4 V ⎯ 2.2 4.0

= 10 mA, VGS = 2.5 V ⎯ 4.0 7.0

I

D

V

= 3 V, VGS = 0, f = 1 MHz

DS

V

= 5 V, ID = 10 mA,

DD

= 0 to 5 V

V

GS

⎯ 8.8 ⎯ pF

⎯ 180 ⎯

Switching Time Test Circuit

(a) Test circuit

(b) V

IN

Ω

ns

V

DS (ON

V

5 V

0 V

DD

10%

t

t

on

90%

10%

90%

r

t

f

t

off

5 V

0

10 μs

VDD = 5 V
Duty ≤ 1%
V

: tr, tf < 5 ns

IN

= 50 Ω)

(Z

out

Common Source
Ta = 25°C

OUT

IN

L

50 Ω

R

V

DD

(c) V

OUT

Precaution

Vth can be expressed as voltage between gate and source when low operating current value is ID = 100 μA for this
product. For normal switching operation, V
voltage than V

. (Relationship can be established as follows: V

th

Please take this into consideration for using the device.

requires higher voltage than Vth and V

GS (on)

< Vth < V

GS (off)

GS (on)

)

requires lower

GS (off)

2

2014-03-01