TOSHIBA RN4605 User Manual
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RN4605
Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
TOSHIBA Transistor
RN4605
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l Includeing two devices in SM6 (super mini type with 6 leads)
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
Equivalent Circuit and Bias Resister Values
R1: 2.2kΩ
R2: 47kΩ
(Q1, Q2 Common)
Q1 Maximum Ratings
(Ta = 25°°°°C)
Unit in mm
Characteristic Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC −100 mA
Q2 Maximum Ratings
Characteristic Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage V
Emitter-base voltage V
Collector current IC 100 mA
(Ta = 25°°°°C)
−50 V
CBO
−50 V
CEO
−5 V
EBO
50 V
CBO
50 V
CEO
5 V
EBO
JEDEC ―
EIAJ ―
TOSHIBA
Weight: 0.015g
2-3N1A
1
2001-06-05
Q1, Q2 Common Maximum Ratings
Characteristic Symbol Rating Unit
(Ta = 25°°°°C)
RN4605
Collector power dissipation P
Junction temperature Tj 150 °C
Storage temperature range T
* Total rating
* 300 mW
C
−55~150 °C
stg
Marking
Equivalent Circuit
(Top View)
2
2001-06-05
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