Toshiba RN2107F, RN2108F, RN2109F Schematic [ru]
RN2107F∼RN2109F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2107F,RN2108F,RN2109F
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
z With built-in bias resistors
z Simplify circuit design
z Reduce a quantity of parts and manufacturing process
z Complementary to RN1107F~RN1109F
Equivalent Circuit and Bias Resister Values
Type No. R1 (kΩ) R2 (kΩ)
RN2107F 10 47
RN2108F 22 47
RN2109F 47 22
Absolute Maximum Ratings
(Ta = 25°C)
Unit: mm
JEDEC ⎯
EIAJ ⎯
TOSHIBA 2-2HA1A
Weight: 2.3 mg (typ.)
Characteristic Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage
Emitter-base voltage
Collector current IC −100 mA
Collector power dissipation PC 100 mW
Junction temperature Tj 150 °C
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
RN2107F
~RN2109F
RN2107F −6
RN2108F −7
RN2109F
RN2107F
~RN2109F
−50 V
CBO
V
−50 V
CEO
V
EBO
−15
T
−55~150 °C
stg
V
2007-11-01 1
RN2107F∼RN2109F
Electrical Characteristics
Characteristic Symbol
Collector cut-off
current
Emitter cut-off current
DC current gain
Collector-emitter
saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency
Collector Output
capacitance
Input resistor
Resistor ratio
RN2107F
~RN2109F
RN2107F V
RN2108F V
RN2109F
RN2107F 80 ― ―
RN2108F 80 ― ―
RN2109F
RN2107F
~RN2109F
RN2107F
RN2108F
RN2109F
RN2107F
RN2108F
RN2109F
RN2107F
~RN2109F
RN2107F
~RN2109F
RN2107F
RN2108F
RN2109F
RN2107F
RN2108F
RN2109F
(Ta = 25°C)
V
V
V
Test
Circuit
I
CBO
I
CEO
I
EBO
h
FE
CE (sat)
I (ON)
I (OFF)
f
―
T
C
―
ob
R1 ― ―
R1/R2 ― ―
―
―
―
―
―
―
Test Condition Min Typ. Max Unit
V
= −50V, IE = 0 ― ― −100 nA
CB
V
= −50V, IB = 0 ― ― −500 nA
CE
= −6V, IC = 0 −0.081 ― −0.15
EB
= −7V, IC = 0 −0.078 ― −0.145
EB
V
= −15V, IC = 0 −0.167 ― −0.311
EB
V
= −5V,
CE
= −10mA
I
C
70 ― ―
I
= −5mA,
C
= −0.25mA
I
B
V
= −0.2V,
CE
I
= −5mA
C
V
= −5V,
CE
= −0.1mA
I
C
V
= −10V,
CE
IC = −5mA
V
= −10V, IE = 0,
CB
f = 1MH
z
― −0.1 −0.3
−0.7 ― −1.8
−1.0 ― −2.6
−2.2 ― −5.8
−0.5 ― −1.0
−0.6 ― −1.16
−1.5 ― −2.6
― 200 ―
― 3 6
7 10 13
15.4 22 28.6
32.9 47 61.1
0.191 0.213 0.232
0.421 0.468 0.515
1.92 2.14 2.35
mA
―
V
V
V
MHz
pF
kΩ
―
2007-11-01 2
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