Toshiba RN2101F, RN2102F, RN2103F, RN2104F, RN2105F Schematic

RN2101F~RN2106F

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2101F,RN2102F,RN2103F RN2104F,RN2105F,RN2106F

Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

l Complementary to RN1101F~RN1106F

Equivalent Circuit and Bias Resister Values

Unit: mm

Type No. R1 (kΩ) R2 (kΩ)

RN2101F 4.7 4.7

RN2102F 10 10

RN2103F 22 22

RN2104F 47 47

Maximum Ratings

Collector-base voltage V

Collector-emitter voltage

Emitter-base voltage

Collector current IC −100 mA

Collector power dissipation PC 100 mW

Junction temperature Tj 150 °C

Storage temperature range

(Ta = 25°C)

Characteristic Symbol Rating Unit

RN2105F 2.2 47

RN2106F 4.7 47

−50 V

RN2101F~2106F

RN2101F~2104F −10

RN2105F, 2106F

RN2101F~2106F

CBO

V

−50 V

CEO

V

EBO

T

−55~150 °C

stg

−5

JEDEC ― EIAJ ― TOSHIBA 2-2HA1A

V

1

2001-06-07

RN2101F~RN2106F

Electrical Characteristics

Characteristic Symbol

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Input voltage (ON)

Input voltage (OFF)

Transition frequency

Collector Output capacitance

Input resistor

Resistor ratio

RN2101F

~2106F

RN2101F −0.82 ― −1.52

RN2102F −0.38 ― −0.71

RN2103F −0.17 ― −0.33

RN2104F

RN2105F −0.078 ― −0.145

RN2106F

RN2101F 30 ― ―

RN2102F 50 ― ―

RN2103F 70 ― ―

RN2104F 80 ― ―

RN2105F 80 ― ―

RN2106F

RN2101F

~2106F

RN2101F

RN2102F

RN2103F

RN2104F

RN2105F

RN2106F

RN2101F

~2104F

RN2105F,

2106F

RN2101F

~2106F

RN2101F

~2106F

RN2101F

RN2102F

RN2103F

RN2104F

RN2105F

RN2106F

RN2101F

~2104F

RN2105F

RN2106F

(Ta = 25°C)

V

R1/R2 ―

Test

Circuit

I

CBO

I

CEO

I

EBO

h

FE

CE (sat)

I (ON)

I (OFF)

fT ―

―

C

ob

R1 ―

―

―

Test Condition Min Typ. Max Unit

V

= −50V, IE = 0 ― ― −100

CB

V

= −50V, IB = 0 ― ― −500

CE

= −10V, IC = 0

V

EB

−0.082 ― −0.15

= −5V, IC = 0

V

EB

V

= −5V,

CE

I

= −10mA

C

= −5mA,

I

C

IB = −0.25mA

= −0.2V,

V

CE

IC = −5mA

= −5V,

V

CE

IC = −0.1mA

= −10V,

V

CE

IC = −5mA

= −10V, IE = 0,

V

CB

f = 1MHz

−0.074 ― −0.138

80 ― ―

― −0.1 −0.3

−1.1

−1.2

−1.3

−1.5

−0.6

−0.7

−1.0 ― −1.5

−0.5 ― −0.8

― 200 ―

― 3 6

3.29 4.7 6.11

7 10 13

15.4 22 28.6

32.9 47 61.1

1.54 2.2 2.86

3.29 4.7 6.11

0.9 1.0 1.1

0.0421 0.0468 0.0515

0.09 0.1 0.11

―

−2.0

−2.4

−3.0

−5.0

−1.1

−1.3

nA

mA

V

MHz

pF

kΩ



2

2001-06-07

RN2101F~RN2106F

3

2001-06-07

Toshiba RN2101F, RN2102F, RN2103F, RN2104F, RN2105F Schematic [ru]