Toshiba RN1421, RN1422, RN1423, RN1424, RN1425 Schematic [ru]

...
RN1421RN1427
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1421,RN1422,RN1423,RN1424
RN1425,RN1426,RN1427
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
z High current type (I z With built-in bias resistors z Simplify circuit design z Reduce a quantity of parts and manufacturing process z Low V z Complementary to RN2421 to RN2427
CE
(sat)
(max) = 800mA)
C

Equivalent Circuit and Bias Resister Values

Unit: mm
Absolute Maximum Ratings
Characteristic Symbol Rating Unit
Collector-base voltage V
Collector-emitter voltage
Emitter-base voltage
Collector current IC 800 mA
Collector power dissipation PC 200 mW
Junction temperature Tj 150 °C
Storage temperature range
Type No. R1 (k) R2 (kΩ)
RN1421 1 1
RN1422 2.2 2.2
RN1423 4.7 4.7
RN1424 10 10
RN1425 0.47 10
RN1426 1 10
RN1427 2.2 10
(Ta = 25°C)
RN1421 to 1427
RN1421 to 1424 10
RN1425, 1426 5
RN1427
RN1421 to 1427
50 V
CBO
V
50 V
CEO
V
EBO
6
T
55 to 150 °C
stg
S-Mini
JEDEC TO-236MOD
JEITA SC-59
TOSHIBA 2-3F1A
Weight: 12 mg (typ.)
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1
2010-08-20

Electrical Characteristics (Ta = 25°C)

RN1421RN1427
Characteristic Symbol
I
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Input voltage (ON)
Input voltage (OFF)
Transition frequency RN1421 to 1427 fT V
Collector Output capacitance
Input resistor
Resistor ratio
RN1421 to 1427
RN1421 3.85 ― 7.14
RN1422 1.75 ― 3.25
RN1423 0.82 ― 1.52
RN1424
RN1425 0.365 ― 0.682
RN1426
RN1427
RN1421 60
RN1422 65
RN1423 70
RN1424 90
RN1425 90
RN1426 90
RN1427
RN1421
RN1422 to 1427
RN1421
RN1422
RN1423
RN1424
RN1425
RN1426
RN1427
RN1421 to 1424
RN1425, 1426
RN1427
RN1421 to 1427 C
RN1421
RN1422
RN1423
RN1424
RN1425
RN1426
RN1427
RN1421 to 1424
RN1425
RN1426 0.09 0.1 0.11
RN1427
CBO
I
CEO
I
EBO
h
FE
V
CE (sat)
V
I (ON)
V
I (OFF)
ob
R1
R1/R2
Test
Circuit
V
V
V
Test Condition Min Typ. Max Unit
V
= 50V, IE = 0 100
CB
V
= 50V, IB = 0 500
CE
= 10V, IC = 0
V
EB
0.38 0.71
V
= 5V, IC = 0
EB
= 6V, IC = 0 0.378 0.703
V
EB
= 1V, IC = 100mA
CE
I
= 50mA, IB = 2mA
C
= 50mA, IB = 1mA
I
C
= 0.2V, IC = 100mA
CE
= 5V, IC = 0.1mA
CE
= 5V, IC = 20mA 300
CE
= 10V, IE = 0,
V
CB
f = 1MHz
0.35 0.65
90
1.0
1.4
2.0
3.0
0.6
0.7
1.0
0.8
0.4
0.5 1.0
7
0.7 1.0 1.3
1.54 2.2 2.86
3.29 4.7 6.11
0.329 0.47 0.61
0.7 1.0 1.3
1.54 2.2 2.86
0.9 1.0 1.1
0.0423 0.047 0.0517
0.2 0.22 0.24
7 10 13
0.25
3.5
4.5
6.5
12.0
2.0
2.5
3.0
1.3
0.8
nA
mA
V
V
V
MHz
pF
k
2
2010-08-20
RN1421RN1427
3
2010-08-20
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