Datasheet XCM519 Datasheet (TOREX)

(

XCM519 Series

600mA Synchronous Step-Down DC/DC Converter + Low Voltage Input LDO

■GENERAL DESCRIPTION

The XCM519 series is a multi combination module IC which comprises of a 600mA driver transistor built-in synchronous
step–down DC/DC converter and a low voltage input LDO regulator. The device is housed in small USP-12B01 package which
is ideally suited for space conscious applications. Battery operated portable products require high efficiency so that a dual
DC/DC converter is often used. The XCM519 can replace this dual DC/DC to eliminate one inductor and reduce output noise.
The DC/DC converter and the LDO regulator blocks are isolated in the package so that noise interference from the DC/DC to
the LDO regulator is minimal.
A low output voltage and low On-resistance LDO regulator is added in series to the DC/DC output so that one another low output
voltage is created with a high efficiency and low noise. With comparison to the dual DC/DC solution, one inductor can be
eliminated which results in parts reduction and board space saving.

■APPLICATIONS

●Mobile phones, Smart phones

Bluetooth equipment

●

Portable communication modems

●

●Portable game consoles

■ TYPICAL APPLICATION CIRCUIT

* The dashed lines denote the connection using
through-holes at the backside of the PC board.

■TYPICAL PERFORMANCE
CHARACTERISTICS

Dropout Voltage vs. Output Current

300

250

200

150

100

50

Dropout Voltage: Vdif(mV)

0

0 100 200 300 400

TOP VIEW)

VROUT=1.2V

Ta=25℃

VBIAS=3.0V
VBIAS=3.3V
VBIAS=3.6V
VBIAS=4.2V
VBIAS=5.0V

　Output Current: IOUT(mA)

■FEATURES

<DC/DC Converter Block>

Input Voltage Range : 2.7V ~ 6.0V

Output Voltage Range : 0.8V ~ 4.0V

High Efficiency : 92% (TYP.)
Output Current : 600mA (MAX.)
Oscillation Frequency : 1.2MHz, 3.0MHz (+15%)
Maximum Duty Cycle : 100%

Soft-Start Circuit Built-In
Current Limiter Circuit
Built-In
Control Methods : PWM (XCM519A)
PWM/PFM Auto (XCM519B)

*Performance depends on external components and wiring on PCB wiring.

<Regulator Block>

Maximum Output Current
Dropout Voltage : 35mV@I
(at V
Bias Voltage Range : 2.5V ~ 6.0V
Input Voltage Range : 1.0V ~ 3.0V (V
Output Voltage Range : 0.7V ~ 1.8V (0.05V increments)
High Output Accuracy : ±20mV
Supply Current : I
Stand-by Current : I
UVLO : V
Thermal Shut Down :
Soft-start Time : 240μs＠V
CL High Speed Auto-Discharge

Low ESR Capacitor : Ceramic Capacitor Compatible
Operating Ambient Temperature
Package
Environmentally Friendly

Standard Voltage Combinations : DC/DC VR
XCM519xx01Dx 1.8V 1.2V
XCM519xx02Dx 1.8V 1.5V
XCM519xx03Dx 1.5V 1.2V
XCM519xx04Dx 1.8V 1.0V
XCM519xx05Dx 1.5V 1.0V

*Other combinations are available as semi-custom products.

(Constant Current & Latching)

: 400mA (Limiter 550mA TYP.)

=100mA (TYP.)

OUT

-

V

BIAS

ROUT(E)

(V

BIAS

IN2≦VBIAS

=25μA , I

BIAS

=0.01μA , I

BIAS

=2.0V , V

BIAS

IN2

Detect 150℃, Release 125℃ (TYP.)

=1.2V(TYP.)

ROUT

: -40℃ ~ +85℃
: USP-12B01
:

EU RoHS Compliant, Pb Free

ETR2421-005

=2.4V)

- V

ROUT(E)

=0.9V)

)

=1.0μA (TYP.)

IN2

=0.01μA (TYP.)

IN2

=0.4V (TYP)

1/49

XCM519 Series

■PIN CONFIGURATIOIN

DC/DC

(*1)

V

SS

VR

(*2)

V

BIAS

NOTE:
* The DC/DC ground pin (No. 2 and 11) should be connected for use.
* Two dissipation pads on the reverse side of the package should be electrically isolated.
(*1): Electrical potential of the dissipation pad should be V
(*2): Electrical potential of the dissipation pad should be V
Care must be taken for an electrical potential of each dissipation pad so as to enhance mounting strength and heat release
when the pad needs to be connected to the circuit.

(BOTTOM VIEW)

■PIN ASSIGNMENT

PIN No XCM519 FUNCTIONS

1 DCOUT

DC/DC Block: Output Voltage

2 AGND DC/DC Block: Analog Ground

3 EN1 DC/DC Block: Chip Enable

4 V

5 V

Voltage Regulator Block: Power Input

IN2

Voltage Regulator Block: Ground

SS2

6 VROUT Voltage Regulator Block: Output

7 EN2 Voltage Regulator Block: Enable

8 NC No Connection

9 V

10 V

Voltage Regulator Block: Power Input

BIAS

DC/DC Block: Power Input

IN1

11 PGND DC/DC Block: Power Ground

12 Lx DC/DC Block: Switching

2/49

PIN No.

1 DCOUT V

XCM519 DC/DC VR

OUT

2 AGND AGND ―

3 EN1 CE ―

4 V

5 V

― V

IN2

― V

SS2

6 VROUT ― V

7 EN2 ― CE

8 NC ― ―

9 V

10 V

― V

BIAS

V

IN1

―

IN

11 PGND PGND ―

12 Lx Lx ―

level.

SS

level.

BIAS

―

OUT

BIAS

IN

SS

X

■PRODUCT CLASSIFICATION

●Ordering Information

XCM519A①②③④⑤-⑥
XCM519B①②③④⑤

DESIGNATOR ITEM SYMBOL DESCRIPTION

①

② ③

(*1)

④⑤-⑥

(*1)

The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.

Package (Order Unit) DR-G USP-12B01 (3,000/Reel)

(*1)

DC/DC BLOCK：PWM fixed control

(*1)

-⑥

DC/DC BLOCK：PWM/PFM automatic switching control

Oscillation Frequency and Options － See the chart below

Output Voltage

－

Internally set sequential number relating to output voltage

(See the chart below)

●DESIGNATOR①

DC/DC BLOCK Voltage Regulator BLOCK

①

A 1.2M Not Available Standard Not Available

B 3.0M Not Available Standard Not Available

C 1.2M Available High Speed Not Available

D 3.0M Available High Speed Not Available

OSCILLATION

FREQUENCY

CL AUTO

DISCHARGE

SOFT START Pull-down

●DESIGNATOR②③

②③

01 1.8V 1.2V

02 1.8V 1.5V

03 1.5V 1.2V

04 1.8V 1.0V

05 1.5V 1.0V

*When the DCOUT pin is connected to V

*This series are semi-custom products. For other combinations of output voltages please consult with your Torex sales contact.

DCOUT VROUT

, DCOUT pin output voltage can be fixed in the range of 1.0V～3.0V.

IN2

CM519

Series

3/49

XCM519 Series

■BLOCK DIAGRAMS

Step-Down DC/DC Converter

XC9235A/XC9236A

R3

R4

Error Amp.

Vref with
Soft Start,
CE

UVLO

Phase
Compensation

VSHORT

PWM/PFM
Selector

UVLO Cmp

PWM
Comparator

Current Feedback

Current Limit

Logic

Synch
Buffer

Drive

Ramp Wave

Generator

OSC

CE/MODE
Control
Logic

Lx

CE

V

OUT

V

IN

V

SS

V

OUT

R2

V

R1

IN

V

SS

VR

* XCM519 series A type is a fixed PWM because that the “CE/MODE Control Logic” outputs a low level signal to the “PWM/PFM Selector”.

* XCM519 series B type is an auto PWM/PFM switching because the “CE/MODE Control Logic” outputs a high level signal to the “PWM/PFM Selector”.

*Diodes inside the circuit are an ESD protection diode and a parasitic diode.

■MAXIMUM ABSOLUTE RATINGS

Ta =2 5 ℃

PARAMETER SYMBOL RATINGS UNITS

V

Voltage V

IN1

- 0.3 ～ 6.5 V

IN1

Lx Voltage VLx - 0.3 ～ V

DCOUT Voltage V

EN1 Voltage V

- 0.3 ～ 6.5 V

DCOUT

- 0.3 ～ 6.5 V

EN1

Lx Current ILx ±1500 mA

V

Voltage V

BIAS

V

Voltage

IN2

VROUT Current

VROUT Voltage V

EN2 Voltage V

Power Dissipation

(Ta=25℃)

USP-12B01 Pd 150 mW

V

BIAS

V

V

IN2

700

I

VROUT

ROUT

V

EN2

Junction Temperature Tj 125 ℃

Operating Ambient Temperature Topr -40～+85 ℃

Storage Temperature Tstg -55～+125 ℃

(*1)

I

=Less than Pd / (V

VROUT

IN2-VROUT

)

4/49

Step-Down DC/DC Converter

XC9235B/XC9236B

Available with CL Discharge, High Speed Soft-Start

Available with CL Discharge, High Speed Soft-Start

Phase
Compensation

R2

Error Amp.

R1

SS

SS

VSS - 0.3～V

- 0.3～V

V

SS

SS

VSHORT

Vref with
Soft Start,
CE

UVLO

R3

R4

+ 0.3 or 6.5 V

IN1

- 0.3 ～ 7.0 V

- 0.3 ～ 7.0 V

(*1)

mA

+ 0.3

BIAS

+ 0.3

IN2

- 0.3 ～ 6.5 V

、）(CL放電機能有 高速ソフトスタート

Current Feedback

Current Limit

PWM
Comparator

Logic

PWM/PFM
Selector

UVLO Cmp

Synch
Buffer

Drive

Ramp Wave

Generator

OSC

CE/MODE
Control
Logic

Lx

CE/

CE

V

X

■ELECTRICAL CHARACTERISTICS

CM519

Series

●XCM519xA (DC/DC BLOCK) V

DCOUT

=1.8V, f

=1.2MHz, Ta=25℃

OSC

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Output Voltage V

Operating Voltage Range V

Maximum Output Current I

UVLO Voltage V

Supply Current IDD

Stand-by Current I

Oscillation Frequency f

PFM Switching Current I

PFM Duty Limit D

Maximum Duty Ratio D

Minimum Duty Ratio D

Efficiency

(*2)

EFFI

Lx SW "H" ON Resistance 1 R

Lx SW "H" ON Resistance 2 R

Lx SW "L" ON Resistance 1 R

Lx SW "L" ON Resistance 2 R

Lx SW "H" Leak Current

Lx SW "L" Leak Current

Current Limit

Output Voltage

Temperature

Characteristics

(*5)

I

(*5)

I

(*9)

I

△

(V

DCOUT

EN1 "H" Level Voltage V

EN1 "L" Level Voltage V

EN1 "H" Current I

EN1 "L" Current I

Soft Start Time tSS

Latch Time t

Short Protection

Threshold Voltage

DCOUT

IN1

OUT1MAX

UVLO

STB

OSC

PFM

LIMIT_PFM

MAX

MIN

LXH

LXH

LXL

LXL

LEAKH

LEAKL

LIM

V

DCOUT

・△

EN1H

EN1L

EN1H

EN1L

LAT

V

SHORT

When connected to external components,
V

= V

IN1

2.7 - 6.0 V

When connected to external components,
V

IN1=VDCOUT(T)

V

EN1=VIN1, VDCOUT

Voltage which Lx pin holding “L” level

V

IN1=VEN1

V

V

V

V

=5.0V, V

IN1

When connected to external components,
V

IN1=VDCOUT(T)

When connected to external components,
V

IN1=VDCOUT(T)

EN1=VIN1

= V

IN1

= V

IN1

When connected to external components,
V

EN1=VIN1＝VDCOUT(T)

V

V

V

V

V

V

V

/

Topr)

V

V

= V

IN1

= V

IN1

= V

IN1

= V

IN1

= V

IN1

= V

IN1

IN1=VEN1

I

=30mA

OUT1

-40℃≦Topr≦85℃

V

DCOUT

Voltage changes Lx to “H” level
V

DCOUT

Voltage changes Lx to “L” level

IN1=VEN1

=5.0V, V

IN1

When connected to external components,
V

=0V → V

EN1

V

= VEN=5.0V, V

IN

Short Lx at 1Ω resistance
Sweeping V
1Ω resistance, V
level within 1ms

Test conditions: Unless otherwise stated, VIN = 5.0V, V

=5.0V, I

EN1

+2.0V, V

OUT1

=30mA

=1.0V

EN1

=0V,

=5.0V,

V

=

V

DCOUT

DCOUT(T)

=(C-1), I

=5.0V, V

EN1

=5.0V, V

EN1

=5.0V, V

EN1

=3.6V, V

EN1

=5.0V

EN1

=3.6V

EN1

DCOUT

DCOUT

=5.0V, V

=0V, V

EN1

+2.0V,V

+2.0V, V

OUT1

(*4)

(*4)

=5.0V, V

=5.0V, V

DCOUT

=

V

DCOUT

=1.0V, I

EN1

=V

EN1

IN1

(*11)

=1mA

=

V

DCOUT

DCOUT(T)

=

V

DCOUT

DCOUT(T)

(*7)

+1.2V

DCOUT

DCOUT

, I

=0V,ILX=100mA

=0V,ILX=100mA

- 0.45 0.66 Ω

- 0.52 0.77 Ω

=0V, VLX=0V - 0.01 1.0 μA

EN1

=0V, VLX=5.0V - 0.01 1.0 μA

EN1

=

V

DCOUT(T)

=0V, Applied voltage to V

=0V, Applied voltage to V

=5.0V, V

EN1

IN1

DCOUT

=0V - 0.1 - 0.1 μA

DCOUT

=0V, V

, I

OUT1

DCOUT

, V

DCOUT

=0V - 0.1 - 0.1 μA

DCOUT

=1mA
=0.8×V

(*6)

= 5.0V, Short Lx at

IN1=VEN1

voltage which Lx becomes “L”

= Setting voltage

DCOUT(T)

(*8)

(*1, *10)

×1.1V

DCOUT(T)

, I

(XCM519AA)

(XCM519BA)

×1.1V - 0 1.0 μA

(*11)

(*11)

OUT1

OUT1

=100mA

=1mA

- 200 - %

×0.9V 100 - - %

×1.1V - - 0 %

=100mA

OUT1

(*3)

- 0.35 0.55 Ω

(*3)

- 0.42 0.67 Ω

×0.9V 900 1050 1350 mA

EN,
(*10)

EN,

(*10)

DCOUT(T)

1.764 1.800 1.836 V ①

600 - - mA

1.00 1.40 1.78 V

- 22 50

- 15 33

1020 1200 1380 kHz

120 160 200 mA

- 92 - %

- ±100 - ppm/ ℃

0.65 - 6.0 V

V

- 0.25 V

SS

0.5 1.0 2.5 ms

1.0 - 20.0 ms

0.675 0.900 1.125 V

μA

NOTE:
*1: Including hysteresis width of operating voltage.

*2: EFFI = { ( output voltage×output current ) / ( input voltage×input current) }×100
*3: ON resistance (Ω)= (V

- Lx pin measurement voltage) / 100mA

IN

*4: Design value
*5: When temperature is high, a current of approximately 10μA (maximum) may leak.

*6: Time until it short-circuits DCOUT with GND via 1Ωof resistor from an operational state and is set to Lx=0V from current limit pulse

generating.

*7: V

+1.2V<2.7V, VIN=2.7V.

DCOUT(T)

*8: When the difference between the input and the output is small, some cycles may be skipped completely before current maximizes.

If current is further pulled from this state, output voltage will decrease because of P-ch driver ON resistance.

*9: Current limit denotes the level of detection at peak of coil current.

*10: "H"＝V
*11: XCM519A series exclude I

- 1.2V, "L"＝+ 0.1V ～ - 0.1V

IN～VIN

and MAXI

PFM

because those are only for the PFM control’s functions.

PFM

* The electrical characteristics above are when the other channel is in stop mode.

CIRCUIT

①

①

③

②

②

①

①

①

②

②

①

④
④
－
－
⑤
⑤
⑥

①

③

③

⑤
⑤

①

⑦

⑦

5/49

XCM519 Series

■ELECTRICAL CHARACTERISTICS (Continued)

●XCM519xB 1ch (DC/DC BLOCK) V

DCOUT

=1.8V, f

=3.0MHz, Ta=25℃

OSC

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Output Voltage V

Operating Voltage Range V

Maximum Output Current I

UVLO Voltage V

DCOUT

2.7 - 6.0 V

IN1

OUT1MAX

UVLO

Supply Current IDD

Stand-by Current I

Oscillation Frequency f

PFM Switching Current I

PFM Duty Limit D

Maximum Duty Ratio D

Minimum Duty Ratio D

V

STB

OSC

PFM

LIMIT_PFM

V

MAX

V

MIN

Efficiency EFFI

Lx SW "H" ON Resistance 1 R

Lx SW "H" ON Resistance 2 R

Lx SW "L" ON Resistance 1 R

Lx SW "L" ON Resistance 2 R

Lx SW "H" Leak Current

Lx SW "L" Leak Current

Current Limit

(*5)

I

(*5)

I

(*9)

I

Output Voltage

Temperature

Characteristics

(V

EN1 "H" Level Voltage V

EN1 "L" Level Voltage V

EN1 "H" Current I

EN1 "L" Current I

V

LXH

V

LXH

V

LXL

V

LXL

V

LEAKH

V

LEAKL

V

LIM

△

V

DCOUT

・△

To p r )

DCOUT

EN1H

EN1L

V

EN1H

V

EN1L

Soft Start Time tSS

Latch Time t

Short Protection

Threshold Voltage

V

LAT

SHORT

Test conditions: Unless otherwise stated, V

When connected to external components,
V

= V

IN1

When connected to external components,

V

IN1=VDCOUT(T)

V

EN1=VIN1, VDCOUT

=5.0V, I

EN1

+2.0V, V

OUT1

=0V,

=30mA

=1.0V

EN1

Voltage which Lx pin holding “L” level

V

=5.0V, V

IN1=VEN1

=5.0V, V

IN1

DCOUT=VDCOUT(T)

=0V, V

EN1

DCOUT=VDCOUT(T)

When connected to external components,
V

IN1=VDCOUT(T)

+2.0V,V

EN1

=1.0V, I

When connected to external components,
V

IN1=VDCOUT(T)

V

EN1=VIN1

IN1=VEN1

IN1=VEN1

+2.0V, V

=(C-1) I

=5.0V, V

=5.0V, V

=V

EN1

(*11)

=1mA

OUT1

DCOUT=VDCOUT(T)

DCOUT=VDCOUT(T)

IN1

When connected to external components,
V

EN1=VIN1＝VDCOUT(T)

= V

IN1

= V

IN1

= V

IN1

= V

IN1

= V

IN1

= V

IN1

IN1=VEN1

/

I

=30mA

OUT1

-40℃≦Topr≦85℃

V

DCOUT

=5.0V, V

EN1

=3.6V, V

EN1

=5.0V

EN1

=3.6V

EN1

DCOUT

DCOUT

=5.0V, V

=0V, Applied voltage to V

+1.2V, I

OUT1

=0V,ILX=100mA

DCOUT

=0V,ILX=100mA

DCOUT

(*4)

- 0.45 0.66 Ω

(*4)

- 0.52 0.77 Ω

=5.0V, V

=5.0V, V

=0V, VLX=0V - 0.01 1.0 μA

EN1

=0V, VLX=5.0V - 0.01 1.0 μA

EN1

DCOUT=VDCOUT(T)

Voltage changes Lx to “H” level
V

=0V, Applied voltage to V

DCOUT

Voltage changes Lx to “L” level

IN1=VEN1

=5.0V, V

IN1

=5.0V, V

EN1

=0V - 0.1 - 0.1 μA

DCOUT

=0V, V

=0V - 0.1 - 0.1 μA

DCOUT

When connected to external components,
V

=0V → V

EN1

V

IN1=VEN1

Short Lx at 1Ω resistance
Sweeping V
1Ω resistance, V
“L” level within 1ms

=5.0V, V

IN1

DCOUT(T)

, I

IN1

DCOUT

OUT1

DCOUT

, V

DCOUT

IN1=VEN1

=5.0V, V

= Nominal voltage

=1mA

=0.8×V

(*6)

=5.0V, Short Lx at

voltage which Lx becomes

(*8)

(*1, *10)

×1.1V

(XCM519AB) - 46 65

(XCM519BB) - 21 35

×1.1V - 0 1.0 μA

=100mA

OUT1

=1mA

(*11)

, I

OUT1

- 200 300 %

×0.9V 100 - - %

×1.1V - - 0 %

=100mA

(*3)

- 0.35 0.55 Ω

(*3)

- 0.42 0.67 Ω

×0.9V 900 1050 1350 mA

EN,

(*10)

EN,

(*10)

DCOUT(T)

1.764 1.800 1.836 V ①

600 - - mA

1.00 1.40 1.78 V

2550 3000 3450 kHz

170 220 270 mA

- 86 - %

- ±100 - ppm/ ℃

0.65 - 6.0 V

V

- 0.25 V

SS

0.5 0.9 2.5 ms

1.0 - 20 ms

0.675 0.900 1.125 V

NOTE:
*1: Including hysteresis width of operating voltage.

*2: EFFI = { ( output voltage×output current ) / ( input voltage×input current) }×100
*3: ON resistance (Ω)= (V

- Lx pin measurement voltage) / 100mA

IN

*4: Design value
*5: When temperature is high, a current of approximately 10μA (maximum) may leak.

*6: Time until it short-circuits V

with GND via 1Ωof resistor from an operational state and is set to Lx=0V from current limit pulse

DCOUT

generating.

*7: V

+1.2V<2.7V, VIN=2.7V.

DCOUT (T)

*8: When the difference between the input and the output is small, some cycles may be skipped completely before current maximizes.

If current is further pulled from this state, output voltage will decrease because of P-ch driver ON resistance.

*9: Current limit denotes the level of detection at peak of coil current.

*10: "H"＝V

*11: XCM519A series exclude I

- 1.2V, "L"＝+ 0.1V ～ - 0.1V

IN～VIN

PFM

and D

because those are only for the PFM control’s functions.

LIMIT_PFM

* The electrical characteristics above are when the other channel is in stop mode.

6/49

μA

CIRCUIT

①

①

③

②

②

①

①

①

②

②

①

④
④
－
－
⑤
⑤
⑥

①

③

③

⑤

⑤

①

⑦

⑦

X

■ELECTRICAL CHARACTERISTICS (Continued)

CM519

Series

●XCM519xC 1ch (DC/DC BLOCK) V

DCOUT

=1.8V, f

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Output Voltage V

Operating Voltage Range V

Maximum Output Current I

UVLO Voltage V

DCOUT

IN1

OUT1MAX

UVLO

Supply Current IDD

Stand-by Current I

Oscillation Frequency f

PFM Switching Current I

PFM Duty Limit D

Maximum Duty Ratio D

Minimum Duty Ratio D

STB

OSC

PFM

LIMIT_PFM

MAX

MIN

Efficiency EFFI

Lx SW "H" ON Resistance 1 R LXH V

Lx SW "H" ON Resistance 2 R LXH V

Lx SW "L" ON Resistance 1 RLXL V

Lx SW "L" ON Resistance 2 RLXL V

Lx SW "H" Leak Current

Current Limit

Output Voltage

Temperature

Characteristics

EN1 "H" Level Voltage V

EN1 "L" Level Voltage V

EN1 "H" Current I

EN1 "L" Current I

(*5)

I

(*9)

I

LEAKH

LIM

△

V

DCOUT

(V

・△

DCOUT

EN1H

EN1L

EN1H

EN1L

Soft Start Time tSS

Latch Time T

Short Protection

Threshold Voltage

CL Discharge R

V

LAT

SHORT

DCHG

When connected to external components,
V

IN1=VEN1

=5.0V,I

2.7 - 6.0 V

When connected to external components,
V

IN1=VDCOUT(T)

V

V

V

V

EN1=VIN1,VDCOUT

Voltage which Lx pin holding “L” level

V

IN1=VEN1

=5.0V,V

IN1

When connected to external components,
V

IN1=VDCOUT(T)

When connected to external components,
V

IN1=VDCOUT(T)

V

EN1=VIN1

IN1=VEN1

IN1=VEN1

+2.0V,V

=5.0V,

EN1

+2.0V,V

+2.0V,V

=(C-1)I

=5.0V, V

=5.0V, V

V

=0V, V

When connected to external components,
V

EN1=VIN1＝VDCOUT(T)

=5.0V, V

IN1=VEN1

=3.6V, V

IN1=VEN1

=5.0V

IN1=VEN1

=3.6V

IN1=VEN1

V

V

/

Topr)

V

V

= V

IN1

IN1=VEN1

I

OUT1

V

DCOUT

=5.0V,V

DCOUT

=5.0V, V

=30mA, -40℃≦Topr≦85℃ - ±100 - ppm/℃

=0V, Applied voltage to V
Voltage changes Lx to “H” level
V

=0V, Applied voltage to V

DCOUT

Voltage changes Lx to “L” level

=5.0V, V

IN1=VEN1

=5.0V,V

IN1

EN1

=0V, V

When connected to external components,
V

=0V→V

EN1

V

IN1=VEN1

Short Lx at 1Ω resistance
Sweeping V
1Ω resistance, V

, I

IN1

=5.0V, V

DCOUT

“L” level within 1ms

V

=5.0V, LX=5.0V,V

IN1

=1.2MHz, Ta=25℃

OSC

=30mA

OUT1

(*8)

=1.0V

EN1

=0V,

DCOUT=VDCOUT(T)

DCOUT=VDCOUT(T)

=1.0V, I

EN1

EN1=VIN1

=1mA

OUT1

DCOUT=VDCOUT(T)

DCOUT=VDCOUT(T)

+1.2V

=0V,ILX=100mA

DCOUT

=0V,ILX=100mA

DCOUT

(*4)

- 0.45 0.66 Ω

(*4)

- 0.52 0.77 Ω

=0V,LX=0V - 0.01 1.0 μA

EN1

DCOUT=VDCOUT(T)

=0V - 0.1 - 0.1 μA

DCOUT

DCOUT

=1mA

OUT1

=0.8×V

DCOUT

, V

IN1=VEN1

voltage which Lx becomes

DCOUT

(*1, *10)

×1.1V

(XCM519AC) - 22 50
(XCM519BC) - 15 33

×1.1V - 0 1.0 μA

=100mA

OUT1

=1mA

(*11)

, I

OUT1

(*11)

- 200 %

×0.9V 100 - - %

×1.1V - - 0 %

(*7)

, I

=100mA

OUT1

(*3)

- 0.35 0.55 Ω

(*3)

- 0.42 0.67 Ω

×0.9V 900 1050 1350 mA

EN1,

(*10)

EN1,
(*10)

=0V - 0.1 - 0.1 μA

DCOUT(T)

(*6)

=5.0V, Short Lx at

1.764 1.800 1.836 V

600 - - mA

1.00 1.40 1.78 V

1020 1200 1380 kHz

120 160 200 mA

- 92 - %

0.65 - 6.0 V

V

- 0.25 V

SS

- 0.25 0.40 ms

1.0 - 20 ms

0.675 0.900 1.150 V

EN1

=0V, V

DCOUT

=Open

200 300 450 Ω

μA

CIRCUIT

①

①

①

②

③

③

①

①

②

②

②

①

④
④
－
－
⑨
⑥

①

③

③

⑤
⑤

①

⑦

⑦

⑧

Test conditions: Unless otherwise stated, V

=5.0V, V

IN1

)= Nominal voltage

DCOUT(T)

NOTE:
*1: Including hysteresis width of operating voltage.

*2: EFFI = { ( output voltage×output current ) / ( input voltage×input current) }×100
*3: ON resistance (Ω)= (V

- Lx pin measurement voltage) / 100mA

IN

*4: Design value
*5: When temperature is high, a current of approximately 10μA (maximum) may leak.

*6: Time until it short-circuits V

with GND via 1Ωof resistor from an operational state and is set to Lx=0V from current limit pulse

DCOUT

generating.

*7: V

+1.2V<2.7V, VIN=2.7V.

DCOUT (T)

*8: When the difference between the input and the output is small, some cycles may be skipped completely before current maximizes.

If current is further pulled from this state, output voltage will decrease because of P-ch driver ON resistance.

*9: Current limit denotes the level of detection at peak of coil current.

*10: "H"＝V

*11: XCM519A series exclude I

- 1.2V, "L"＝+ 0.1V ～ - 0.1V

IN～VIN

PFM

and D

because those are only for the PFM control’s functions.

LIMT_PFM

* The electrical characteristics above are when the other channel is in stop mode.

7/49

XCM519 Series

■ELECTRICAL CHARACTERISTICS (Continued)

●XCM519xD 1ch (DC/DC BLOCK) V

DCOUT

=1.8V, f

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Output Voltage V

Operating Voltage Range V

Maximum Output Current I

UVLO Voltage V

DCOUT

IN1

OUT1MAX

UVLO

Supply Current IDD V

Stand-by Current I

Oscillation Frequency f

PFM Switching Current I

PFM Duty Limit D

Maximum Duty Ratio D

Minimum Duty Ratio D

STB

OSC

PFM

LIMIT_PFM

MAX

MIN

Efficiency EFFI

Lx SW "H" ON Resistance 1 R LXH V

Lx SW "H" ON Resistance 2 R LXH V

Lx SW "L" ON Resistance 1 RLXL V

Lx SW "L" ON Resistance 2 RLXL V

Lx SW "H" Leak Current

Current Limit

Output Voltage

Temperature

Characteristics

EN1 "H" Level Voltage V

EN1 "L" Level Voltage V

EN1 "H" Current I

EN1 "L" Current I

(*5)

I

(*9)

I

LEAKH

LIM

△

V

DCOUT

・△

(V

DCOUT

EN1H

EN1L

EN1H

EN1L

Soft Start Time tSS

Latch Time t

Short Protection

Threshold Voltage

CL Discharge R

V

LAT

SHORT

DCHG

When connected to external components,
V

IN1=VEN1

=5.0V, I

2.7 - 6.0 V

When connected to external components,
V

IN1=VDCOUT(T)

V

V

V

V

EN1=VIN1

Voltage which Lx pin holding “L” level

IN1=VEN1

=5.0V,V

IN1

When connected to external components,
V

IN1=VDCOUT(T)

When connected to external components,
V

IN1=VDCOUT(T)

V

EN1=VIN1

IN1=VEN1

IN1=VEN1

+2.0V,V

, V

DCOUT

=5.0V, V

=0V, V

EN1

+2.0V, V

+2.0V, V

=(C-1)I

=5.0V, V

=5.0V, V

When connected to external components,
V

EN1=VIN1＝VDCOUT(T)

=5.0V, V

IN1=VEN1

=3.6V, V

IN1=VEN1

=5.0V

IN1=VEN1

=3.6V

IN1=VEN1

V

V

/

Topr)

V

V

=DCOUT=5.0V,V

IN1

=5.0V, V

IN1=VEN1

I

=30mA

OUT1

-40℃≦Topr≦85℃

V

=0V, Applied voltage to V

DCOUT

Voltage changes Lx to “H” level
V

=0V, Applied voltage to V

DCOUT

Voltage changes Lx to “L” level

=5.0V, V

IN1=VEN1

=5.0V,V

IN1

EN1

=0V, V

When connected to external components,
V

=0V→V

EN1

V

IN1=VEN1

Short Lx at 1Ω resistance
Sweeping V
1Ω resistance, V

, I

IN1

=5.0V, DCOUT=0.8×DCOUT(E)

DCOUT

“L” level within 1ms

V

=5.0V, LX=5.0V, V

IN1

=3.0MHz, Ta=25℃

OSC

=30mA

OUT1

(*8)

=1.0V

EN1

=0V,

DCOUT=VDCOUT(T)

DCOUT=VDCOUT(T)

EN1

EN1=VIN1

=1mA

OUT1

DCOUT=VDCOUT(T)

DCOUT=VDCOUT(T)

+1.2V

=0V, ILX=100mA

DCOUT

=0V, ILX=100mA

DCOUT

(*4)

- 0.45 0.66 Ω

(*4)

- 0.52 0.77 Ω

=0V, LX=0V - 0.01 1.0 μA

EN1

DCOUT=VDCOUT(T)

(*1, *10)

(XCM519AD) - 46 65

×1.1V

(XCM519BD) - 21 35

×1.1V - 0 1.0 μA

=1.0V, I

(*11)

=100mA

OUT1

=1mA

(*11)

, I

OUT1

- 200 300 %

×0.9V 100 - - %

×1.1V - - 0 %

(*7)

,I

=100mA

OUT1

(*3)

- 0.35 0.55 Ω

(*3)

- 0.42 0.67 Ω

×0.9V 900 1050 1350 mA

1.764 1.800 1.836 V

600 - - mA

1.00 1.40 1.78 V

2550 3000 3450 kHz

170 220 270 mA

- 86 - %

- ±100 - ppm/℃

EN1,

(*10)

EN1,

(*10)

=0V - 0.1 - 0.1 μA

DCOUT

=0V - 0.1 - 0.1 μA

DCOUT

=1mA

OUT1

(*6)

, V

DCOUT

=5.0V, Short Lx at

IN1=VEN1

voltage which Lx becomes

0.65 - 6.0 V

V

- 0.25 V

SS

- 0.32 0.50 ms

1.0 - 20 ms

0.675 0.900 1.150 V

EN1

=0V, V

DCOUT

=Open

200 300 450 Ω

μA

CIRCUIT

①

①

①

②

③

③

①

①

②

②

②

①

④
④
－
－
⑨
⑥

①

③

③

⑤
⑤

①

⑦

⑦

⑧

Test conditions: Unless otherwise stated, V

=5.0V, V

IN1

= Nominal voltage

DCOUT(T)

NOTE:
*1: Including hysteresis width of operating voltage.

*2: EFFI = { ( output voltage×output current ) / ( input voltage×input current) }×100
*3: ON resistance (Ω)= (V

- Lx pin measurement voltage) / 100mA

IN

*4: Design value
*5: When temperature is high, a current of approximately 10μA (maximum) may leak.

*6: Time until it short-circuits V

with GND via 1Ωof resistor from an operational state and is set to Lx=0V from current limit pulse

DCOUT

generating.

*7: V

+1.2V<2.7V, VIN=2.7V.

DCOUT (T)

*8: When the difference between the input and the output is small, some cycles may be skipped completely before current maximizes.

If current is further pulled from this state, output voltage will decrease because of P-ch driver ON resistance.

*9: Current limit denotes the level of= detection at peak of coil current.

*10: "H"＝V

*11: XCM519A series exclude I

- 1.2V, "L"＝+ 0.1V ～ - 0.1V

IN～VIN

PFM

and D

because those are only for the PFM control’s functions.

LIMT_PFM

* The electrical characteristics above are when the other channel is in stop mode.

8/49

X

■ELECTRICAL CHARACTERISTICS (Continued)

●PFM Switching Current (I

1.2MHz

SETTING VOLTAGE MIN. TYP. MAX.

V

1.2V＜V

1.8V≦V

DCOUT(E)

DCOUT(E)

≦1.2Ｖ

≦1.75Ｖ

DCOUT(E)

3.0MHz (mA)

SETTING VOLTAGE MIN. TYP. MAX.

V

1.2V＜V

1.8V≦V

DCOUT(E)

DCOUT(E)

≦1.2Ｖ

≦1.75Ｖ

DCOUT(E)

●Measuring Maximum I

f

1.2MHz 3.0MHz

OSC

(C-1) V

DCOUT(E)

+0.5V V

Minimum operating voltage is 2.7V

ex.) Although when V

DCOUT(E)

●Soft-Start Time Chart (XCM519xC/ XCM519xD Series Only)

PRODUCT SERIES f

XCM519AC

XCM519BC

XCM519xD

) by Oscillation Frequency and Output Voltage

PFM

(mA)

140 180 240

130 170 220

120 160 200

190 260 350

180 240 300

Limit, VIN Voltage

PFM

DCOUT(E)

=1.2V, f

170 220 270

+1.0V

=1.2MHz, (C-1)=1.7V the (C-1) becomes 2.7V because of the minimum operating voltage 2.7V.

OSC

OUTPUT VOLTAGE MIN. TYP. MAX.

OSC

1200kHz

1200kHz

1200kHz

1200kHz

1200kHz

1200kHz

3000kHz

3000kHz

0.8≦V

1.5≦V

1.8≦V

2.5≦V

0.8≦V

2.5≦V

0.8≦V

1.8≦V

DCOUT(E)

DCOUT(E)

DCOUT(E)

DCOUT(E)

DCOUT(E)

DCOUT(E)

DCOUT(E)

DCOUT(E)

<1.5

<1.8

<2.5

<4.0

<2.5

<4.0

<1.8

<4.0

- 250

- 320

- 250

- 320

- 250

- 320

- 250

- 320

CM519

Series

400μs

500μs

400μs

500μs

400μs

500μs

400μs

500μs

9/49

XCM519 Series

■ELECTRICAL CHARACTERISTICS (Continued)

●XCM519xx 2ch (REGULATOR BLOCK)

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Bias Voltage

Input Voltage

Output Voltage V

Maximum Output Current1

Maximum Output Current2

Maximum Output Current3

Load Regulation △V

Dropout Voltage1 Vdif1

Dropout Voltage2 Vdif2

Dropout Voltage3 Vdif3

Dropout Voltage4 Vdif4

Supply Current 1 I

Supply Current 2 I

Bias Current

Stand-by Current 1 I

Stand-by Current 2 I

Bias Regulation

Input Regulation

Bias Voltage UVLO V

Input Voltage UVLO V

V

Ripple Rejection V

BIAS

V

Ripple Rejection V

IN2

(*1)

V

(*2)

V

(*10)

I

(△V

(△V

V

BIAS

V

IN2

V

(*3)

ROUT(E)

I

I

I

△V

BIAS・VROUT

△V

OUTMAX1

OUTMAX2

OUTMAX3

ROUT

(*7)

V

(*7)

V

(*7)

V

(*7)

V

BIAS

IN2

BIASMAX

V

BIAS_STB

V

IN_STB

/

ROUT

)

/

ROUT

IN2・VROUT

BIAS_UVLO

IN_UVLO

BIAS_PSRR

IN_PSRR

)

V

V

BIAS=VEN2

V

EN2 =VBIAS

V

EN2 =VBIAS

V

EN2 =VBIAS

V

BIAS=VEN2

V

BIAS=VEN2

V

BIAS=VEN2

V

ROUT(T)

V

IN2=VROUT(T)

V

ROUT(T)

V

IN2

BIAS

BIAS

V

IN2=VROUT(T)

V

IN2=VROUT(T)

V

ROUT(T)

V

ROUT(T)

=V

EN2

V

=3.6VDC+0.2Vp-pAC,V

BIAS

V

IN2=VOUT(T)

V

=V

EN2

BIAS,VIN2=VROUT(T)

BIAS=VEN2

=3.6V,V

IR

,V

=V

V

IN2

,V

=V

V

IN2

,V

=V

V

IN2

=3.6V, V

1mA≦I

EN2 =VBIAS

EN2 =VBIAS

EN2 =VBIAS

EN2 =VBIAS

=3.6V,V

V

ROUT(T)

=3.6V, V

V

ROUT(T)

≧0.95V,V

+0.05V, V
＜0.95V,V

=1.0V, V

ROUT=VROUT(T)

=6.0V,V

=6.0V,V

V

ROUT(T)

+1.2V≦V

V

ROUT(T)

+0.3V, V

V

ROUT(T)

2.5V≦V

+0.3V, V

≧0.90V,V

V

ROUT(T)

BIAS=VEN2

＜0.90V,1.0V≦V

V

BIAS=VEN2

=V

BIAS,VIN2

BIAS=VEN2

=3.6V, I

=30mA,f=1kHz

I

OUT

+0.3VDC+0.2Vp-pAC,

=3.6V, I

BIAS

+0.3V 2.5 - 6.0 V －

=3.6V 1.0 - 3.0 V －

IN2=VROUT(T)

=1mA

OUT

BIAS -VROUT(T)

ROUT(T)

BIAS -VROUT(T)

ROUT(T)

BIAS -VROUT(T)

ROUT(T)

IN2=VROUT(T)

≦100mA

VROUT

, I

OUT

, I

OUT

, I

OUT

, I

OUT

IN2=VROUT(T)

+0.3V,

≧1.2V

+0.5V

≧1.3V

+0.5V

≧1.5V

+0.5V

+0.3V,

=100mA E-1

=200mA E-2

=300mA E-3

=400mA E-4

+0.3V

=OPEN

IN2=VROUT(T)

+0.3V

=OPEN

BIAS=VEN2

ROUT=VROUT(T)

BIAS=VEN2

=3.6V,

- 0.05V

=3.6V,

-0.02 V

200 - - mA ⑩

300 - - mA ⑩

400 - - mA ⑩

- 8 17 mV

8 25 45 μA ⑩

- 1.0 2.5 μA ⑩

- 1.0 2.5 mA ⑩

(*4)

+0.02

OUT(T)

(*5)

E-0

(*6)

mV ⑩

(*6)

mV ⑩

(*6)

mV ⑩

(*6)

mV ⑩

- 0.05V

=3.0V, V

IN2

=3.0V, V

IN2

- 0.01 0.10 μA ⑩

EN2=VSS2

- 0.01 0.35 μA ⑩

EN2=VSS2

≧1.3V

≦6.0V,

BIAS

, I

EN2 =VBIAS

＜1.3V

≦6.0V,

BIAS

EN2 =VBIAS

+0.1V≦V

=3.6V,I

OUT

=3.6V,I

OUT

+0.3V,I

ROUT(T)

VROUT

IN2=VROUT(T)

=30mA,f=1kHz

OUT

=1mA

, I

=1mA

≦3.0V

IN2

OUT

=1mA

OUT

≦3.0V,

IN2

- 0.01 0.3 %/V ⑩

- 0.01 0.1 %/V ⑩

=1mA

=1mA 1.37 2.0 2.5 V ⑩

OUT

=1mA 0.07 0.4 0.6 V ⑩

+0.3V,

- 40 - dB ⑪

- 60 - dB ⑪

CIRCUIT

V

－

－

10/49

X

■ELECTRICAL CHARACTERISTICS (Continued)

●XCM519xx 2ch (REGULATOR BLOCK) (Continued)

CM519

Series

PARAMETER SYMBOL CONDITIONS MIN. TYP. MAX. UNITS

Output Voltage

Temperature

Characteristics

Limit Current

Short Current

Thermal Shutdown

Detect Temperature

Thermal Shutdown

Release Temperature

TSD Hysteresis Width T

CL Auto-Discharge

Resistance

EN2 "H" Level Voltage V

EN2 "L" Level Voltage V

EN2 "H" Level Current I

EN2 "L" Level Current I

Soft Start Time

NOTE:
* 1: Please use Bias voltage V
* 2: Please use Input voltage V
* 3: V

ROUT(E)

* 4: V

ROUT(T)

* 5: E-0 = Please refer to the table named OUTPUT VOLTAGE CHART
* 6: E-1 = Please refer to the table named DROPOUT VOLTAGE CHART
* 7: Vdif={V
* 8: V

IN21

* 9: V

ROUT1

V

BIAS

*10 : I

BIASMAX

*11: t

■OUTPUT VOLTAGE CHART

: Time that V

SS

* The electrical characteristics above are when the other channel is in stop mode.

(*11)

: Effective output voltage
: Specified output voltage

(*8)

-V

IN21

: The input voltage when VOUT1 appears as input voltage is gradually decreased.

: A voltage equal to 98% of the output voltage while maintaining an amply stabilized output voltage when V

≧3.0V at V

: A supply current at the V

NOMINAL OUTPUT

VOLTAGE (V)

V

ROUT(T)

△V

ROUT

(△Topr・V

I

LIM

I

SHORT

T

TSD

T

TSR

TSD－TTSR

R

DCHG

EN2H

EN2L

EN2H

EN2L

ROUT1

IN2=VBIAS

ROUT

t

SS

BIAS

(*9)

}

input to the V

becomes more than V

OUTPUT VOLTAGE (V)

MIN. MAX.

V

/

BIAS=VEN2

)

ROUT

Junction Temperature - 150 - ℃

Junction Temperature - 125 - ℃

- 25 - ℃

within the range V

within the range VIN≦V

IN

BIAS

E-0

V

ROUT

0.70 0.680 0.720

0.75 0.730 0.770

0.80 0.780 0.820

0.85 0.830 0.870

0.90 0.880 0.920

0.95 0.930 0.970

1.00 0.980 1.020

1.05 1.030 1.070

1.10 1.080 1.120

1.15 1.130 1.170

1.20 1.180 1.220

1.25 1.230 1.270

=3.6V, V

IN2=VROUT(T)

+0.3V , I

- 40℃≦ Topr ≦85℃

V

ROUT=VROUT(T)

V

BIAS=VEN2

V

BIAS=VEN2

V

BIAS

V

BIAS

V

=3.6V、V

BIAS

pin.

BIAS

pin providing for the output current (I

ROUT(E)

=3.6V, V

=3.6V, V

=3.6V, V

V

V

=6.0V, V

= V

IN2

V

ROUT=VROUT(T)

=3.6V,V

BIAS

=3.6V,V

BIAS

V

BIAS=VEN2

V

IN2=VROUT(T)

EN2=VSS,VIN2=VROUT(T)

IN2=VROUT(T)

V

EN2

BIAS –VROUT(T)

BIAS

×0.9V after the EN2 pin is input 0.75V as EN2 “H” level voltage.

IN2=VROUT(T)

IN2=VROUT(T)

=0V

V

ROUT

ROUT(T)

IN2=VROUT(T)

IN2=VROUT(T)

=6.0V,

+0.3V

=0V→3.6V

≧0.9V

×0.95,

+0.3V

+0.3V,

+0.3V, V

EN2

+0.3V 0.75 - 6.0

+0.3V - - 0.16

+0.3V、I

OUT

=30mA,

OUT

- ±100 - ppm/℃

400 - - mA

- 80 - mA

= VSS

290 430 610 Ω

-0.1 - 0.1

+0.3V -0.1 - 0.1

=1mA

) .

VROUT

NOMINAL OUTPUT

VOLTAGE (V)

V

100 - 410

BIAS

E-0

OUTPUT VOLTAGE (V)

V

ROUT

MIN. MAX.

ROUT(T)

1.30 1.280 1.320

1.35 1.330 1.370

1.40 1.380 1.420

1.45 1.430 1.470

1.50 1.480 1.520

1.55 1.530 1.570

1.60 1.580 1.620

1.65 1.630 1.670

1.70 1.680 1.720

1.75 1.730 1.770

1.80 1.780 1.820

V

V

μA ⑩

μA ⑩

μs ⑫

<3.0V at V

CIRCUIT

= V

IN2

⑩

⑩

⑩

⑩

⑩

⑩

⑩

⑩

⑩

BIAS,

11/49

XCM519 Series

■DROPOUT VOLTAGE CHART

E-1

NOMINAL OUTPUT

VOLTAGE (V)

V

ROUT(T)

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

1.45

1.50

1.55

1.60

1.65

1.70

1.75

1.80

V

=3.0(V)

BIAS

(*1)

Vgs

(V)

2.30

2.25

2.20

2.15

2.10

2.05 2.35 2.65 3.25

Vdif (mV) Vdif (mV) Vdif (mV) Vdif (mV) Vdif (mV)

TYP. MAX.

40 300

250

41

200

150

42

100

43 68

2.00

1.95 2.25 2.55 3.15 3.95
46 72

1.90

1.85 2.15 2.45 3.05 3.85
48 75

1.80

1.75 2.05 2.35 2.95 3.75
51 81

1.70

1.65 1.95 2.25 2.85 3.65
54 87

1.60

1.55 1.85 2.15 2.75 3.55
57 92

1.50

1.45 61

1.40

63 97

1.35 67

1.30

70 113

1.25 74

1.20

79 154

94

104

131

V

=3.3(V)

BIAS

Vgs

(V)

TYP. MAX.

2.60

2.55

35 300

36

2.50

2.45
38

2.40

40 61

2.30

41 63

2.20

42 65

2.10

43 68

2.00

46 72

1.90

48 75

1.80

1.75 2.05 2.65 3.45
51 81

1.70

1.65 1.95 2.55 3.35
54 87

1.60

1.55 1.85 2.45 3.25
57 92

1.50

*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of V

DROPOUT VOLTAGE1 (mV)

Vdif1

V

=3.6(V) V

BIAS

Vgs

(V)

TYP. MAX.

33 300

34

34

250

200

150

100

2.90

2.85

2.80

2.75

2.70

35 56

2.60

36 58

2.50

38 59

2.40

40 61

2.30

41 63

2.20

42 65

2.10

43 68

2.00

46 72

1.90

48 75

1.80

250

200

150

100

BIAS

- V

Vgs

(V)

3.50

3.45

3.40

3.35

3.30

3.20

3.10

3.00

2.90

2.80

2.70

2.60

2.50

2.40

ROUT

=4.2(V) V

BIAS

TYP. MAX.

30 300

31

31

32

32 50

32 51

33 52

34 53

34 54

35 56

36 58

38 59

.

(T)

250

200

150

100

50

49

Vgs

(V)

4.30

4.25

4.20

4.15

4.10

4.05

4.00

3.90

3.80

3.70

3.60

3.50

3.40

3.30

3.20

=5.0(V)

BIAS

TYP. MAX.

27 300

28

28

28

29 45

29 46

29 47

30 47

30 48

31 48

31 49

32 49

250

200

150

100

50

44

12/49

X

■DROPOUT VOLTAGE CHART (Continued)

E-2

DROPOUT VOLTAGE 2 (mV)

NOMINAL OUTPUT

VOLTAGE (V)

V

ROUT(T)

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

1.45

1.50

1.55

1.60

1.65

1.70

1.75

1.80

V

=3.3(V)

V

=3.0(V)

BIAS

(*1)

Vgs

(V)

2.30

2.25

2.20

2.15

2.10

2.05 2.35 2.65 3.25 4.05

Vdif (mV) Vdif (mV) Vdif (mV) Vdif (mV) Vdif (mV)

TYP MAX

81 300

250

85

200

150

88

131

90 139

2.00

1.95 2.25 2.55 3.15 3.95
96 146

1.90

1.85 2.15 2.45 3.05 3.85

101 154

1.80

1.75 2.05 2.35 2.95 3.75

108 170

1.70

1.65 1.95 2.25 2.85 3.65

115 179

1.60

1.55 1.85 2.15 2.75 3.55

122 192

1.50

1.45 129

1.40

135 206

1.35 145

1.30

154 248

1.25 165

1.20

175 353

197

223

293

BIAS

Vgs

(V)

TYP MAX

2.60

2.55

2.50

2.45

2.40

74 300

250

76

200

150

78

117

81 123

2.30

85 127

2.20

88 131

2.10

90 139

2.00

96 146

1.90

101 154

1.80

1.75 2.05 2.65 3.45
108 170

1.70

1.65 1.95 2.55 3.35
115 179

1.60

1.55 1.85 2.45 3.25
122 192

1.50

Vdif2

V

=3.6(V) V

BIAS

Vgs

(V)

TYP MAX

2.90

2.85

68 300

70

2.80

2.75
72

2.70

74 111

2.60

76 114

2.50

78 117

2.40

81 123

2.30

85 127

2.20

88 131

2.10

90 139

2.00

96 146

1.90

101 154

1.80

*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of V

250

200

150

110

BIAS

- V

Vgs

(V)

3.50

3.45

3.40

3.35

3.30

3.20

3.10

3.00

2.90

2.80

2.70

2.60

2.50

2.40

ROUT

=4.2(V) V

BIAS

TYP MAX

62 300

63

63

64 98

65 101

67 103

68 106

70 108

72 110

74 111

76 114

78 117

.

(T)

250

200

150

100

Vgs

(V)

4.30

4.25

4.20

4.15

4.10

4.00

3.90

3.80

3.70

3.60

3.50

3.40

3.30

3.20

CM519

Series

=5.0(V)

BIAS

TYP MAX

57 300

58

58

58 88

59 90

59 91

60 92

61 93

62 94

63 95

63 97

64 98

250

200

150

100

13/49

XCM519 Series

■DROPOUT VOLTAGE CHART (Continued)

E-3

NOMINAL OUTPUT

VOLTAGE (V)

V

VROUT(T)

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

1.45

1.50

1.55

1.60

1.65

1.70

1.75

1.80

V

=3.0(V)

BIAS

(*1)

Vgs

(V)

2.30

2.25

2.20

2.15

2.10

2.05

2.00

1.95 2.25 2.55 3.15 3.95

1.90

1.85 2.15 2.45 3.05 3.85

1.80

1.75 2.05 2.35 2.95 3.75

1.70

1.65 1.95 2.25 2.85 3.65

1.60

1.55 1.85 2.15 2.75 3.55

1.50

1.45 209

1.40

1.35 239

1.30

1.25 1.55 1.85 2.45 3.25

1.20

Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV)

TYP MAX

130 300

134

138 204

145 216

153 227

161 239

173 264

184 289

196 313

222 344

256 442

250

200

323

388

- -

V

=3.3(V)

BIAS

Vgs

(V)

TYP MAX

115 300

2.60

2.55
117

2.50

2.45 2.75 3.35 150 4.15 150
119 181

2.40

2.35 2.65 3.25 4.05
130 190

2.30

134 197

2.20

138 204

2.10

145 216

2.00

153 227

1.90

161 239

1.80

1.75 2.05 2.65 3.45
173 264

1.70

1.65 1.95 2.55 3.35
184 289

1.60

196 313

1.50

*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of V

DROPOUT VOLTAGE 3 (mV)

Vdif3

V

=3.6(V) V

BIAS

Vgs

(V)

TYP MAX

107 300

109

111 167

115 170

117 176

119 181

130 190

134 197

138 204

145 216

153 227

161 239

250

200

2.90

2.85

2.80

2.70

2.60

2.50

2.40

2.30

2.20

2.10

2.00

1.90

1.80

250

200

BIAS

- V

Vgs

(V)

3.50

3.45

3.40

3.30

3.20

3.10

3.00

2.90

2.80

2.70

2.60

2.50

2.40

ROUT

=4.2(V) V

BIAS

TYP MAX

95 300

96

97

98 151

101 153

105 155

107 159

109 163

111 167

115 170

117 176

119 181

.

(T)

Vgs

(V)

4.30

250

4.25

200

4.20

148 4.10

4.00

3.90

3.80

3.70

3.60

3.50

3.40

3.30

3.20

=5.0(V)

BIAS

TYP MAX

89 300

90

90

91 134

92 137

93 139

93 140

94 141

95 142

96 145

97 148

98 151

250

200

132

14/49

X

■DROPOUT VOLTAGE CHART (Continued)

E-4

DROPOUT VOLTAGE 4(mV)

NOMINAL OUTPUT

VOLTAGE (V)

V

VROUT(T)

0.70

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

1.15

1.20

1.25

1.30

1.35

1.40

1.45

1.50

1.55

1.60

1.65

1.70

1.75

1.80

V

=3.0(V) V

BIAS

(*1)

Vgs

(V)

2.30

2.25 2.55 2.85 3.45

2.20

2.15 2.45 2.75 3.35 4.15

2.10

2.05 2.35 2.65 3.25 4.05

2.00

1.95 2.25 2.55 3.15 3.95

1.90

1.85

1.80

1.75 2.05 2.35 2.95 3.75

1.70

1.65 1.95 2.25 2.85 3.65

1.60

1.55 1.85 2.15 2.75 3.55

1.50

1.45 1.75 2.05 2.65 3.45

1.40

1.35 1.65 1.95 2.55 3.35

1.30

1.25 1.55 1.85 2.45 3.25

1.20

Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV) Vdif(mV)

Vgs

TYP MAX

189 300

2.60

195 277

2.50

201 277

2.40

206 277

2.30

218 277

2.20

227

231

334

2.15

2.10

248 376

2.00

264 418

1.90

281 460

1.80

- -

1.70

- -

1.60

- -

1.50

(V)

BIAS

TYP MAX

=3.3(V) V

157 300

164 272

170 272

189 272

195 272

272

201

277

206 296

218 315

231 334

248 376

264 418

281 460

Vdif4

=3.6(V) V

BIAS

Vgs

(V)

TYP MAX

2.90

146 300

150 250

2.80

153 250

2.70

157 250

2.60

164 250

2.50

2.45
170

2.40

189 255

2.30

195 266

2.20

201 277

2.10

206 296

2.00

218 315

1.90

231 334

1.80

*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of V

250

248

BIAS

- V

Vgs

(V)

3.50

3.40

3.30

3.20

3.10

3.05

3.00

2.90

2.80

2.70

2.60

2.50

2.40

ROUT

=4.2(V) V

BIAS

TYP MAX

129 300

131

134 246

136 246

139 246

142

146 219

150 224

153 228

157 234

164 241

170 248

.

(T)

250

246

246

215

Vgs

(V)

4.30

4.25

4.20

4.10

4.00

3.90

3.85

3.80

3.70

3.60

3.50

3.40

3.30

3.20

CM519

Series

=5.0(V)

BIAS

TYP MAX

116 300

118

119 231

121 231

125 231

128

128 191

129 193

129 195

131 198

134 202

136 205

250

231

231

189

15/49

XCM519 Series

■TYPICAL APPLICATION CIRCUIT

● DC/DC BLOCK f

L : 1.5μH (NR3015 TAIIYO YUDEN)
CIN1 : 10μF (Ceramic)
CL1 : 10μF (Ceramic)
CBIAS : 1μF (Ceramic)
CIN2 : 1μF (Ceramic)
CL2 : 4.7μF (Ceramic)

DCOUT

VROUT

=3.0MHz

OSC

C

L1

1

2

EN1

3

C

C

4

IN2

5

L2

6

■OPERATIONAL EXPLANATION

L

DCOUT

AVSS

EN1 VIN1

VIN2

VSS2

VROUT EN2

PVSS

VBIAS

Lx

12

11

C

IN1

VIN

C

BIAS

EN2

NC

10

9

8

7

● DC/DC BLOCK f

L : 4.7μH (NR4018 TAIIYO YUDEN)
CIN1 : 10μF (Ceramic)
CL1 : 10μF (Ceramic)
CBIAS : 1μF (Ceramic)
CIN2 : 1μF (Ceramic)
CL2 : 4.7μF (Ceramic)

=1.2MHz

OSC

●DC/DC BLOCK

The DC/DC block of the XCM519 series consists of a reference voltage source, ramp wave circuit, error amplifier, PWM
comparator, phase compensation circuit, output voltage adjustment resistors, P-channel MOSFET driver transistor, N-channel
MOSFET switching transistor for the synchronous switch, current limiter circuit, UVLO circuit and others. (See the block
diagram above.)
The series ICs compare, using the error amplifier, the voltage of the internal voltage reference source with the feedback voltage
from the DCOUT pin through split resistors, R1 and R2. Phase compensation is performed on the resulting error amplifier
output, to input a signal to the PWM comparator to determine the turn-on time during PWM operation. The PWM comparator
compares, in terms of voltage level, the signal from the error amplifier with the ramp wave from the ramp wave circuit, and
delivers the resulting output to the buffer driver circuit to cause the Lx pin to output a switching duty cycle. This process is
continuously performed to ensure stable output voltage. The current feedback circuit monitors the P-channel MOS driver
transistor current for each switching operation, and modulates the error amplifier output signal to provide multiple feedback
signals. This enables a stable feedback loop even when a low ESR capacitor such as a ceramic capacitor is used ensuring
stable output voltage.

<Reference Voltage Source>
The reference voltage source provides the reference voltage to ensure stable output voltage of the DC/DC converter.

<Ramp Wave Circuit>
The ramp wave circuit determines switching frequency. The frequency is fixed internally and can be selected from 1.2MHz or

3.0MHz. Clock pulses generated in this circuit are used to produce ramp waveforms needed for PWM operation, and to
synchronize all the internal circuits.

<Error Amplifier>
The error amplifier is designed to monitor output voltage. The amplifier compares the reference voltage with the feedback
voltage divided by the internal split resistors, R1 and R2. When a voltage is lower than the reference voltage is fed back, the
output voltage of the error amplifier increases. The gain and frequency characteristics of the error amplifier output are fixed
internally to deliver an optimized signal to the mixer.

16/49

X

CM519

Series

■OPERATIONAL EXPLANATION (Continued)

<Current Limit>
The current limiter circuit of the XCM519 series monitors the current flowing through the P-channel MOS driver transistor
connected to the Lx pin, and features a combination of the current limit mode and the operation suspension mode.

① When the driver current is greater than a specific level, the current limit function operates to turn off the pulses from the Lx pin

at any given timing.

② When the P-channel MOS driver transistor is turned off, the limiter circuit is then released from the current limit detection
state.
③ At the next pulse, the P-channel MOS driver transistor is turned on. However, the P-channel MOS driver transistor is

immediately turned off in the case of an over current state.

④ When the over current state is eliminated, the IC resumes its normal operation.

The IC waits for the over current state to end by repeating the steps ① through ③. If an over current state continues for a

few ms and the above three steps are repeatedly performed, the IC performs the function of latching the OFF state of the
P-channel MOS driver transistor, and goes into operation suspension mode. Once the IC is in suspension mode, operations
can be resumed by either turning the IC off via the CE/MODE pin, or by restoring power to the V
does not mean a complete shutdown, but a state in which pulse output is suspended; therefore, the internal circuitry remains in
operation. The current limit of the XCM519 series can be set at 1050mA at typical. Besides, care must be taken when laying
out the PC Board, in order to prevent miss-operation of the current limit mode. Depending on the state of the PC Board, latch
time may become longer and latch operation may not work. In order to avoid the effect of noise, the board should be laid out
so that input capacitors are placed as close to the IC as possible.

Limit＜#ms Limit＞#ms

<Short-Circuit Protection>
The short-circuit protection circuit monitors the internal R1 and R2 divider voltage from the DCOUT pin. In case where
output is accidentally shorted to the Ground and when the FB point voltage decreases less than half of the reference
voltage (Vref) and a current more than the I

flows to the P-channel MOS driver transistor, the short-circuit protection

LIM

quickly operates to turn off and to latch the P-channel MOS driver transistor. In latch state, the operation can be resumed
by either turning the IC off and on via the EN1 pin, or by restoring power supply to the V

IN1

pin.
When sharp load transient happens, a voltage drop at the DCOUT pin is propagated to FB point through C
short circuit protection may operate in the voltage higher than 1/2 V

voltage.

OUT

<UVLO Circuit>
When the V
output caused by unstable operation of the internal circuitry. When the V

IN1 pin voltage becomes 1.4V or lower, the P-channel MOS driver transistor is forced OFF to prevent false pulse

pin voltage becomes 1.8V or higher, switching

IN1

operation takes place. By releasing the UVLO function, the IC performs the soft start function to initiate output startup
operation. The soft start function operates even when the V

IN pin voltage falls momentarily below the UVLO operating voltage.

The UVLO circuit does not cause a complete shutdown of the IC, but causes pulse output to be suspended; therefore, the
internal circuitry remains in operation.

pin. The suspension mode

IN

, as a result,

FB

17/49

XCM519 Series

■OPERATIONAL EXPLANATION (Continued)

<PFM Switch Current>
In the PFM control operation, until coil current reaches to a specified level (D
transistor on. In this case, on-time (t

) that the P-channel MOS driver transistor is kept on can be given by the following

ON

formula.

t

= L×IPFM (VIN1－V

ON

) →IPFM①

DCOUT

<PFM duty Limit>
In the PFM control operation, the PFM duty limit (D

) is set to 200% (TYP.). Therefore, under the condition that the duty

LIMT_PFM

increases (e.g. the condition that the step-down ratio is small), it’s possible for P-channel MOS driver transistor to be turned off
even when coil current doesn’t reach to IPFM. →IPFM②

＜CL High Speed Discharge＞
XCM519xC/ XCM519xD series can quickly discharge the electric charge at the output capacitor (CL) when a low signal to the CE

pin which enables a whole IC circuit put into OFF state, is inputted via the N-channel MOSFET switching transistor located
between the L

pin and the VSS pin. When the IC is disabled, electric charge at the output capacitor (CL) is quickly discharged so

X

that it may avoid application malfunction. Discharge time of the output capacitor (CL) is set by the CL auto-discharge resistance
(R) and the output capacitor (C
value (C

) as

L

). By setting time constant of a CL auto-discharge resistance value [R] and an output capacitor

L

τ(τ=C x R), discharge time of the output voltage after discharge via the N channel transistor is calculated by the following
formula.

V = V

DCOUT(T)

V : Output voltage after discharge

V

: Output voltage

DCOUT (T)

t: Discharge time
τ: C×R

C= Capacitance of Output capacitor (C
R= CL auto-discharge resistance

×e

-t /τ

or t = τLn (DCOUT(E) / V)

Output Voltage Dischage Characteristics

100

90

80

)

L

70

60

50

40

30

20

10

0

0 102030405060708090100

), the IC keeps the P-channel MOS driver

LIMIT_PFM

Rdischg

（）

= 300Ω TYP

CL=10uF

CL=20uF

CL=50uF

Discharge Time t (ms)

18/49

X

CM519

Series

■OPERATIONAL EXPLANATION (Continued)

●Voltage Regulator BLOCK

The voltage divided by resistors R1 & R2 is compared with the internal reference voltage by the error amplifier. The N-channel
MOSFET which is connected to the V
is controlled & stabilized by a system of negative feedback.
V

pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. When output current increase,

BIAS

the V

pin supplies output current also. V

BIAS

In order to obtain high efficient output current through low on-resistance, please take enough Vgs (=V
transistor. Output current triggers operation of constant current limiter and fold-back circuit, heat generation triggers operation of
thermal shutdown circuit, the driver transistor circuit is forced OFF when V
Further, the IC's internal circuitry can be shutdown via the EN2 pin's signal.

<Low ESR Capacitor>
With the XCM519 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation
circuit is built-in. The output capacitor (C
compensation. Values required for the phase compensation are as the table below.
For a stable power input, please connect an bias capacitor (C
connect an input capacitor (CIN2) of 1.0μF between the VIN2 pin and the VSS pin. In order to ensure the stable phase
compensation while avoiding run-out of values, please use the capacitor (C
temperature too much. The table below shows recommended values of C

VOLTAGE

0.7V～1.8V C

pin is then driven by the subsequent output signal. The output voltage at the V

ROUT

pin is connected to a driver transistor and provides output current.

IN2

– V

BIAS

ROUT (T)

or V

voltage goes lower than UVLO voltage.

IN2

pin and VSS pin to obtain stable phase

ROUT

pin and the VSS pin. Also, please

BIAS

, C

, CL2 ) which does not depend on bias or

IN2

Figure 1: XC6601B Series

) should be connected as close to V

L2

) of 1.0μF between the V

BIAS

BIAS

BIAS

, CIN, CL.

BIAS

BIAS CAPACITOR INPUT CAPACITOR OUTPUT CAPACITOR NOMINAL

C

C

BIAS

=1.0μF C

BIAS

Recommended Values of C

CL2

IN2

=1.0μF CL2=4.7μF

IN2

BIAS, CIN2, CL2

pin

ROUT

) of the driver

19/49

XCM519 Series

■OPERATIONAL EXPLANATION (Continued)

<Soft-start>

With the XCM519, the inrush current from V
The soft-start time is optimized to 240μA (TYP.) at V
V

from the time when CE H threshold 0.75V is input to the CE pin.

ROUT (E)

(mA)

RUSH

I

Inrush Current

Figure2: Example of the inrush current wave form at IC start-up. Figure3: Timing chart at IC start-up

<

CL High Speed Auto-Discharge>

XCM519 series can quickly discharge the electric charge at the output capacitor (CL) when a low signal to the EN2 pin which
enables a whole IC circuit put into OFF state, is inputted via the N-channel transistor located between the V
V

SS pin. When the IC is disabled, electric charge at the output capacitor (CL) is quickly discharged so that it could avoids

malfunction. At that time, CL discharge resistance is depended on a bias voltage. Discharge time of the output capacitor (CL)
is set by the C

L auto-discharge resistance (R) and the output capacitor (CL). By setting time constant of a CL auto-discharge

resistance value [R] and an output capacitor value (CL) as τ(τ=C x R), the output voltage after discharge via the N channel
transistor is calculated by the following formulas.

V = V

V : Output voltage after discharge, V
τ: C

x e –t/τ, or ｔ=τln（V

ROUT(E)

L auto-discharge resistance R×Output capacitor (CL) value C

ROUT(E)

/ V

ROUT(E)

<Current Limit, Short-Circuit Protection>
The XCM519 series’ fold-back circuit operates as an output current limiter and a short protection of the output pin. When the
load current reaches the current limit level, the fixed current limiter circuit operates and output voltage drops. When the output
pin is shorted to the V

level, current flows about 50mA.

SS

<Thermal Shutdown Circuit (TSD) >
When the junction temperature of the built-in driver transistor reaches the temperature limit level (150℃ TYP.), the thermal
shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown
function is released and the IC’s operation is automatically restored because the junction temperature drops to the level of the
thermal shutdown release temperature (135℃ TYP.).

<Under Voltage Lock Out (UVLO) >
When the V

pin voltage drops below 2.0V (TYP.) or V

BIAS

forced OFF by UVLO function to prevent false output caused by unstable operation of the internal circuitry. When the V
voltage rise at 2.2V (TYP.) or the V

pin voltage rises at 0.4V (TYP.), the UVLO function is released. The driver transistor is

IN2

turned in the ON state and start to operate voltage regulation.

IN2

to V

(V)

EN2 Input Voltage

for charging CL at start-up can be reduced and makes the V

ROUT

=1.2V internally. Soft-start time is defined as the V

ROUT

EN2

V

）

: Output voltage, t: Discharge time,

pin voltage drops below 0.4V (TYP.), the output driver transistor is

IN2

reaches 90% of

ROUT

pin and the

ROUT

stable.

IN2

BIAS

pin

20/49

X

CM519

Series

■OPERATIONAL EXPLANATION (Continued)

<EN2 Pin>
The IC internal circuitry can be shutdown via the signal from the EN2 pin with the XCM519 series. In shutdown mode, output at
the V
resistor is connected in parallel to R1 and R2 while the power supply is applied to the V
pin reaches the V

pin will be pulled down to the VSS level via R1 & R2. However, as for the XCM519 series, the CL auto-discharge

ROUT

pin. Therefore, time until the VROUT

IN2

level becomes short.

SS

The EN2 pin of XCM519 has pull-down circuitry so that EN2 input current increase during IC operation. The EN2 pin of XCM519
does not have pull-down circuitry so that logic is not fixed when the CE pin is open. If the EN2 pin voltage is taken from V

BIAS

pin or VSS pin then logic is fixed and the IC will operate normally. However, supply current may increase as a result of through
current in the IC's internal circuitry when medium voltage is input.

■NOTE ON USE

When the DC/DC converter and the VR are connected as V

IN1=VBIAS

1. When the DC/DC load is changed drastically during a light load of the VR, a fluctuation may happen in tenths of mV. This

value can be reduced by increasing C

load capacitance at the DC/DC in order to reduce a voltage drop during load

L1

transient.

2. It is recommended that both C

立ち上がり 立下り

1ch:DC/DC VOUT:50mV/div

2ch:VR VOUT:50mV/div

4ch:VR IOUT:200mA/div

20μs/div

IN1

and C

are connected to each pin separately. When one capacitor is used instead of

BIAS

the two, this capacitor should be placed in 10μF or more as close as the VIN1 and the PGND (AGND) pins of the DC/DC
circuit. Please ensure it by testing on the actual product design.

3. It is recommended that both C

and C

L1

are connected to each pin separately. When one capacitor is used instead of the

IN2

two, this capacitor should be selected in 4.7μF or bigger. Please ensure it by testing on the actual product design.

4. C

of the VR is recommended 4.7μA. When larger value is used in CL2, the larger value is also used in C

L2

proportional. Please be noted that when C

capacitance of the VR is getting large, an inrush current increases at VR

L2

start-up, DC/DC short circuit protection starts to operate, as a result, the IC may happen to stop.

DCOUT(1V/div)

IIN2(500mA/div)

VROUT(1V/div)

EN2(5V/div)

* VR inrush current I

start, as a result, the IC may happen to stop.

The left waver forms are taken at C

contrast to the recommended 4.7μF).

However, it improves when C

, V

DCOUT=VIN2

, the following points should be noted.

1ch:DC/DC VOUT:50mV/div

2ch:VR VOUT:50mV/div

4ch:VR IOUT:200mA/div

50μs/div

makes DC/DC short-circuit protection to

IN2

=10μ, CL2=10μF(in

L1

=20μF.

L1

L1

as in

50us/div

21/49

XCM519 Series

■NOTE ON USE (Continued)

5. When the input-output voltage differential is small in the DC/DC converter and heavy load condition, a duty cycle is getting

large and keeps the 100% duty cycle in a several period cycles. At the time of duty cycle transition to 100% or from 100%,
noise may appear on the voltage regulator output. Please evaluate this on the actual design board when the condition is
in small input-output voltage differential and heavy load.

6. When the load is changed at the DC/DC converter, ringing may happen in some load conditions of DC/DC and VR at the

timing of turn on and turn off. The ringing can be reduced by increasing C
between V

and V

IN1

BIAS

pins.

7. In order to turn off the input voltage, the EN2 pin should be turned off first. If the input voltage is turned off with keeping VR

operation, the VROUT voltage goes up instantaneously as a result of the VR bias voltage transient.

VIN(5V/div)

DCOUT(500mV/div)

VROUT(500mV/div)

8. When the DCOUT pin is connected to the V

and EN2 should be started up 10μs later than V

200us/div

pin and the bias voltage (V

IN2

. If EN1 and EN2 is turned on within 10μs, inrush current like 1A may

BIAS

happen which result in starting the DC/DC short-circuit protection.

9. It is recommended to test this in the actual product design board.

<DC/DC BLOCK>

1. The XCM519 series is designed for use with ceramic output capacitors. If, however, the potential difference is too large

between the input voltage and the output voltage, a ceramic capacitor may fail to absorb the resulting high switching
energy and oscillation could occur on the output. If the input-output potential difference is large, connect an electrolytic
capacitor in parallel to compensate for insufficient capacitance.

2. Spike noise and ripple voltage arise in a switching regulator as with a DC/DC converter. These are greatly influenced by

external component selection, such as the coil inductance, capacitance values, and board layout of external components.
Once the design has been completed, verification with actual components should be done.

3. As a result of input-output voltage and load conditions, oscillation frequency goes to 1/2, 1/3, and continues, then a ripple

may increase.

4. When input-output voltage differential is large and light load conditions, a small duty cycle comes out. After that, 0%duty

cycle may continue in several periods.

5. When input-output voltage differential is small and heavy load conditions, a large duty cycle comes out and may

continues100% duty cycle in several periods.

6. With the IC, the peak current of the coil is controlled by the current limit circuit. Since the peak current increases when

dropout voltage or load current is high, current limit starts operation, and this can lead to instability. When peak current
becomes high, please adjust the coil inductance value and fully check the circuit operation. In addition, please calculate
the peak current according to the following formula:

Ipk = (V

IN1-VDCOUT

)× OnDuty /(2×L×f

OSC

) + I

OUT

L: Coil Inductance Value
f

: Oscillation Frequency

OSC

capacitance or placing a resistor over 10kΩ

IN1

) is taken from the other power supply, EN1

BIAS

22/49

X

CM519

Series

■NOTE ON USE (Continued)

7. When the peak current which exceeds limit current flows within the specified time, the built-in P-channel MOS driver

transistor turns off. During the time until it detects limit current and before the built-in P-channel MOS driver transistor can
be turned off, the current for limit current flows; therefore, care must be taken when selecting the rating for the external
components such as a coil.

Care must be taken when laying out the PC Board, in order to prevent misoperation of the current limit mode. Depending

8.

on the state of the PC Board, latch time may become longer and latch operation may not work. In order to avoid the effect
of noise, the board should be laid out so that input capacitors are placed as close to the IC as possible.

9. Use of the IC at voltages below the recommended voltage range may lead to instability.

10. This IC should be used within the stated absolute maximum ratings in order to prevent damage to the device.

11. When the IC is used in high temperature, output voltage may increase up to input voltage level at no load because of the

leak current of the P-channel MOS driver transistor.

12. The current limit is set to 1350mA (MAX.) at typical. However, the current of 1350mA or more may flow. In case that the

current limit functions while the DCOUT pin is shorted to the GND pin, when P-channel MOS driver transistor is ON, the
potential difference for input voltage will occur at both ends of a coil. For this, the time rate of coil current becomes large.
By contrast, when N-channel MOS switching transistor is ON, there is almost no potential difference at both ends of the coil
since the DCOUT pin is shorted to the GND pin. Consequently, the time rate of coil current becomes quite small.
According to the repetition of this operation, and the delay time of the circuit, coil current will be converged on a certain
current value, exceeding the amount of current, which is supposed to be limited originally. Even in this case, however,
after the over current state continues for several ms, the circuit will be latched. A coil should be used within the stated
absolute maximum rating in order to prevent damage to the device.

①Current flows into P-channel MOS driver transistor to reach the current limit (I

LIM).

②The current of ILIM or more flows since the delay time of the circuit occurs during from the detection of the current limit to

OFF of P-channel MOS driver transistor.

③Because of no potential difference at both ends of the coil, the time rate of coil current becomes quite small.
④Lx oscillates very narrow pulses by the current limit for several ms.
⑤The circuit is latched, stopping its operation.

13. In order to stabilize V

②

①

LX

ILIM

IL X

’s voltage level and oscillation frequency, we recommend that a by-pass capacitor (CIN) be

IN1

③

Dela y

④

Limit > # mS

ms

⑤

connected as close as possible to the VIN1 & VSS pins.

14. High step-down ratio and very light load may lead an intermittent oscillation.

15. During PWM / PFM automatic switching mode, operating may become unstable at transition to continuous mode.

Please verify with actual parts.

<External Components>

23/49

XCM519 Series

■NOTE ON USE (Continued)

16. Please note the inductance value of the coil. The IC may enter unstable operation if the combination of ambient temperature,

setting voltage, oscillation frequency, and L value are not adequate.
In the operation range close to the maximum duty cycle, The IC may happen to enter unstable output voltage operation even
if using the L values listed below.

<Regulator BLOCK>

1. Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output
current. Please keep the resistance low between V

2. Please wire the bias capacitor (C

3. Capacitance values of these capacitors (C
temperature. Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR
influence.

4. In case of the output capacitor more than CL=22μF is used, ringing of input current occurs when rising time.

5. V

and EN2 should be applied at least 10μs after the bias voltage V

IN2

If V

and EN2 are applied within 10μs, inrush current like 1A may occurs.

IN2

●Instructions of pattern layouts

1. Please use this IC within the stated absolute maximum ratings. The IC is liable to malfunction should the ratings be

exceeded.

2. In order to stabilize V

C

BIAS・CL1・CL2

3. Please mount each external component as close to the IC as possible.

4. Wire external components as close to the IC as possible and use thick, short connecting traces to reduce the circuit

impedance.

5. VSS（AGND・PGND・VSS）ground wiring is recommended to get large area. The IC may goes into unstable operation as a

result of VSS voltage level fluctuation during the switching.

6. This series’ internal driver transistors bring on heat because of the output current (I

transistors.

IN1・VIN2・VBIAS

) be connected as close as possible to the V

), input capacitor (C

BIAS

BIAS, CIN2, CL2

・DCOUT･V

●The Range of L Value

f

<External Components>

, V

BIAS

and VSS wiring in particular.

IN2

) and the output capacitor (CL2) as close to the IC as possible.

IN2

V

OSC

3.0MHz

1.2MHz

*When a coil less value of 4.7 μ H is used at

=1.2MHz or when a coil less value of 1.5μH is

f

OSC

used at f

reach the current limit ILMI. In this case, it may

happen that the IC can not provide 600mA output

current.

0.8V＜V

=3.0MHz, peak coil current more easily

OSC

L Value

OUT

<4.0V 1.0μH～2.2μH

OUT

V

≦2.5V 3.3μH～6.8μH

OUT

2.5V＜V

4.7μH～6.8μH

OUT

) are decreased by the influences of bias voltage and ambient

reaches the requested voltage.

BIAS

voltage level, we recommend that a by-pass capacitor (C

ROUT

IN1・VIN2・VBIAS

・DCOUT･V

and GND･VSS pins.

ROUT

) and ON resistance of driver

OUT

IN1・CIN2

･

AGND

EN1

VIN2

VSS

24/49

DCOUT

CIN3

VROUT

L

Lx

L

CL1

IC

CL2

CIN2

EN2

Front Back

PGND

Ceramic Capacitor

CIN1

Inductor

VBIAS VIN1

X

■TEST CIRCUITS

< Circuit No.1 >

A

CIN

※　External Components

L : 1.5μH(NR3015) 3.0MHz

4.7μH(NR4018) 1.2MHz

CIN : 4.7μF(ceramic)
CL :10μF(ceramic)

VIN1

EN1

AGND PGND

VBIAS

VIN2

EN2

DCOUT

VROUT

< Circuit No.3 >

1μF

VIN1

EN1

AGND PGND

VBIAS

VIN2

EN2

DCOUT

VROUT

< Circuit No.5 >

1μF

ICEH

A

ICEL

VIN1

EN1

AGND PGND

VBIAS

VIN2

EN2

< Circuit No.7 >

1uF

VIN1

EN1

AGND PGND

DCOUT

VBIAS

VIN2

EN2

VROUT

< Circuit No.9 >

A

CIN

VIN1

EN1

AGND PGND

VBIAS

VIN2

EN2

DCOUT

VROUT

Lx

Lx

DCOUT

VROUT

Lx

Lx

Lx

Wave Form Measure Point

L

CL

Wave Form Measure Point

Rpulldown

200Ω

ILeakH

A

ILeakL

Wave Form Measure Point

Ilat

Rpulldown
1Ω

CM519

Series

< Circuit No.2 >

DCOUT

VROUT

DCOUT

VROUT

DCOUT

VROUT

DCOUT

VROUT

Lx

Lx

100mA

V

ILx

A

Wave Form Measure Point

ILIM

V

Lx

Lx

A

V

1uF

VIN1

EN1

AGND PGND

VBIAS

VIN2

EN2

< Circuit No.4 >

VIN1

1μF

EN1

AGND PGND

VBIAS

VIN2

EN2

< Circuit No.6 >

VIN1

1μF

EN1

AGND PGND

VBIAS

VIN2

EN2

< Circuit No.8 >

VIN1

1uF

EN1

AGND PGND

VBIAS

VIN2

EN2

25/49

)

XCM519 Series

■TEST CIRCUITS (Continued

<CircuitNo.10>

V

A

A

V

A

Waveform

measure

V

CBIAS 1.0uFCIN2 1.0uF

CBIAS

1.0uFCIN2

SW3 SW4

CBIAS

1.0uFCIN2

SW1

SW2

V

V

V

<CircuitNo.11>

SW1

V

<CircuitNo.12>

V

* For the timing chart, please refer to <Soft-start> on page 20.

VIN1

EN1

AGND PGND

VBIAS

VIN2

EN2

VSS

VIN1

EN1

AGND PGND

VBIAS

VIN2

EN2

1.0uF

1.0uF

VSS

VIN1

EN1

AGND PGND

VBIAS

VIN2

EN2

VSS

DCOUT

VROUT

DCOUT

VROUT

DCOUT

VROUT

Lx

A

4.7uF

CL2

SW2

V

Lx

A

4.7uF

CL2

V

Lx

Waveform

RL

measure

A

4.7uF

CL2

V

RL

26/49

X

)

)

■TYPICAL PERFORMANCE CHARACTERISTICS

●1ch:DC/DC Block

(1) Efficiency vs. Output Current

DCOUT=1.8V,1.2MHz

L=4.7μH(NR4018), C

PWM/PFM A utomatic Switching Control

100

90

80

70

60

50

40

Efficency:EFF I(%

30

20

10

0

VIN= 4.2V

3.6V

0.1 1 10 100 1000

Output Cur rent:IOUT(mA)

(2) Output Voltage vs. Output Current

DCOUT=1.8V,1.2MHz DCOUT=1.8V,3.0MHz

L=4.7μH(NR4018), C

2.1

DCOUT=1.8V,3.0MHz

=10μF, CL1=10μF L=1.5μH(NR3015), C

IN1

PWM/PFM A utomatic Sw itching Contr ol

100

90

80

70

PWM Control
VIN= 4.2V

3.6V

=10μF, CL1=10μF L=1.5μH(NR3015), C

IN1

60

50

40

Effic ency :EFFI(%

30

20

10

0

0.1 1 10 100 1000

2.1

VIN= 4.2V

3.6V

Output Cur rent:IOUT(mA)

=10μF, CL1=10μF

IN1

PWM Control
VIN= 4.2V

3.6V

=10μF, CL1=10μF

IN1

CM519

Series

2.0

1.9

1.8

1.7

Output Voltage:Vout(V)

1.6

1.5

0.1 1 10 100 1000

PWM/PFM Automatic Sw itching Control

VIN＝4.2V,3.6V

PWM Con tr ol

Output Cur rent:IOUT(mA)

(3) Ripple Voltage vs. Output Current

DCOUT=1.8V,1.2MHz

L=4.7μH(NR4018), C

100

80

60

PWM Control

40

VIN＝4.2V,3.6V

Ripple Voltage:Vr(mV)

20

PWM/PFM A utomatic
Sw itc hing Control
VIN＝4.2V

3.6V

2.0

1.9

1.8

1.7

Output Voltage:Vout(V)

1.6

1.5

0.1 1 10 100 1000

PWM/PFM Automatic Sw itching Contr ol

PWM Control

Output Cur rent:IOUT(mA)

DCOUT=1.8V,3.0MHz

=10μF, CL1=10μF L=1.5μH(NR3015), C

IN1

100

80

60

40

Ripple Voltage:Vr(mV)

20

PWM Control
VIN＝4.2V,3.6V

PWM/PFM A utomatic
Sw itc hing Control
VIN＝4.2V

3.6V

VIN＝4.2V,3.6V

=10μF, CL1=10μF

IN1

0

0.1 1 10 100 1000

Output Cur rent:IOUT(mA)

0

0.1 1 10 100 1000

Output Cur rent:IOUT(mA)

27/49

)

)

XCM519 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(4) Oscillation Frequency vs. Ambient Temperature

DCOUT=1.8V,1.2MHz

L=4.7μH(NR4018), C

1.5

1.4

1.3

1.2

1.1

1.0

0.9

Oscillation Frequency : FOSC(MHz)

0.8

-50 -25 0 25 50 75 100

VIN=3.6V

Ambient Temperature: Ta (℃)

(5) Supply Current vs. Ambient Temperature

DCOUT=1.8V,1.2MHz DCOUT=1.8V,3.0MHz

DCOUT=1.8V,3.0MHz

=10μF, CL1=10μF L=1.5μH(NR3015), C

IN1

3.5

3.4

3.3

3.2

3.1

3.0

2.9

2.8

2.7

Oscillation Frequency : FOSC(MHz)

2.6

2.5

-50 -25 0 25 50 75 100

VIN=3.6V

Ambient Temperature: Ta (℃)

=10μF, CL1=10μF

IN1

40

35

30

25

20

15

10

Supply Current : IDD (μA

5

0

-50 -25 0 25 50 75 100

VIN=4.0V

Ambient Temperature: Ta (℃)

VIN=6.0V

40

35

30

25

20

15

10

Supply Current : IDD ( μA

5

0

-50-25 0 255075100

VIN=4.0V

Ambient Temperature: Ta (℃)

VIN=6.0V

(6) Output Voltage vs. Ambient Temperature (7) UVLO Voltage vs. Ambient Temperature

DCOUT=1.8V,3.0MHz

2.1

2.0

1.9

1.8

VIN=3.6V

DCOUT=1.8V,3.0MHz

1.8

EN=VIN

1.5

1.2

0.9

EN=VIN EN=VIN

CE=V IN

1.7

Output Voltage : VOUT (V)

1.6

1.5

-50 -25 0 25 50 75 100

Ambient Temperature: Ta (℃)

0.6

UVLO Voltage : UVLO (V)

0.3

0.0

-50 -25 0 25 50 75 100

Ambient Temperature: Ta (℃)

28/49

X

)

)

)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(8) EN "H" Voltage vs. Ambient Temperature (9)EN" L" Voltage vs. Ambient Temperature

DCOUT=1.8V,3.0MHz

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

CE "H" Voltage : VCEH (V

0.2

0.1

0.0

-50 -25 0 25 50 75 100

VIN=5.0V

VIN=3.6V

Ambient Temperature: Ta (℃)

(10) Soft Start Time vs. Ambient Temperature

DCOUT=1.8V,3.0MHz DCOUT=1.8V,3.0MHz

L=4.7μH(NR4018), CIN1=10μF, CL1=10μF L=1.5μH(NR3015), CIN1=10μF, CL1=10μF

DCOUT=1.8V,3.0MHz

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

CE "L" Voltage : VCEL (V)

0.2

0.1

0.0

-50 -25 0 25 50 75 100

VIN=5.0V

VIN=3.6V

Ambient Temperature: Ta (℃)

CM519

Series

5

4

3

2

Soft Start Time : TSS (ms

1

0

-50-250 255075100

VIN=3.6V

Ambient Temperature: Ta (℃)

5

4

3

2

Soft Start Time : TSS (ms

1

0

VIN=3.6V

-50 -25 0 25 50 75 100

Ambient Temperature: Ta (℃)

(11) "Pch / Nch" Driver on Resistance vs. Input Voltage

DCOUT=1.8V,3.0MHz

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Lx SW ON Res istance:RLx H,RLxL (Ω)

0.1

0.0
0123456

Input Voltage : VIN ( V)

Nch on Resistance

Pch on Resistanc e

29/49

A

A

XCM519 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(12) XCM519xC/ XCM519xD Rise Wave Form

DCOUT=1.2V,1.2MHz DCOUT=3.3V,3.0MHz

L=4.7μH (NR4018), CIN1=10μF, CL 1=1 0μF

L=1.5μH (NR3015), CIN1=10μF, CL 1=1 0μF

VIN1=5.0V

IOUT=1.0m

VOUT：0.5V/div

VOUT：1.0V/div

100μs/div

(13) XCM519xC/ XCM519xD Soft-Start Time vs. Ambient Temperature

DCOUT=1.2V,1.2MHz DCOUT=3.3V,3.0MHz

L=4.7μH(NR4018), CIN1=10μF, CL1=10μF L=1.5μH(NR3015), CIN1=10μF, CL1=10μF

500

400

300

200

100

VIN=5.0V
IOUT=1.0 mA

Soft Start Time :TSS (μs)

500

400

300

200

VIN=5.0V

Soft Start Time :TSS (μs)

IOUT=1.0 mA

100

VIN1=5.0V

IOUT=1.0m

EN：0.0V⇒1.0V EN：0.0V⇒1.0V

100μs/div

0

-50 -25 0 25 50 75 100

Ambient Temperature: Ta(℃)

0

-50 -25 0 25 50 75 100

Ambient Temperature: Ta(℃)

(14) XCM519xC/ XCM519xD CL Discharge Resistance vs. Ambient Temperature

DCOUT=3.3V,3.0MHz

600

500

400

300

200

CL Discharge Resistance: (Ω)

100

-50 -25 0 25 50 75 100

Ambient Temperature: Ta (℃)

VIN=6.0V

VIN=4.0V

30/49

X

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(15) Load Transient Response

DCOUT=1.2V,1.2MHz(PWM/PFM Automatic Switching Control)
L=4.7μH(NR4018), C

=3.6V, EN1=V

V

IN1

I

=1mA → 100mA I

OUT

1ch : I

V

: 50mV/div V

OUT

=100mA → 1mA I

I

OUT

1ch : I

: 50mV/div V

V

OUT

1ch : I

OUT

2ch 2ch

1ch : I

OUT

2ch 2ch

=10μF(ceramic), CL1=10μF(ceramic), Topr=25℃

IN1

IN1

50μs/div 50μs/div

200μs/div 200μs/div

=1mA → 300mA

OUT

OUT

: 50mV/div

OUT

=300mA → 1mA

OUT

OUT

: 50mV/div

OUT

CM519

Series

31/49

XCM519 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(15) Load Transient Response (Continued)

DCOUT=1.2V,1.2MHz(PWM Control)
L=4.7μH(NR4018), C

=3.6V, EN1=V

V

IN1

I

=1mA → 100mA I

OUT

1ch: I

1ch: I

OUT

2ch 2ch

V

: 50mV/div V

OUT

=100mA → 1mA I

I

OUT

1ch: I

1ch: I

OUT

2ch 2ch

: 50mV/div V

V

OUT

=10μF(ceramic), CL1=10μF(ceramic), Topr=25℃

IN1

IN1

50μs/div 50μs/div

200μs/div 200μs/div

=1mA → 300mA

OUT

OUT

: 50mV/div

OUT

=300mA → 1mA

OUT

OUT

: 50mV/div

OUT

32/49

X

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(15) Load Transient Response (Continued)

DCOUT
L=1.5μH(NR3015), C

V

I

OUT

V

IOUT=100mA → 1mA IOUT=300mA → 1mA

V

=1.8V,3.0MHz(PWM/PFM Automatic Switching Control)

T

=10μF(ceramic), CL1=10μF(ceramic),Topr=25℃

IN1

=3.6V, EN=V

IN1

IN1

=1mA → 100mA I

1ch : I

1ch : I

OUT

2ch 2ch

: 50mV/div V

OUT

50μs/div 50μs/div

1ch : I

1ch : I

OUT

2ch 2ch

: 50mV/div V

OUT

200μs/div 200μs/div

=1mA → 300mA

OUT

OUT

: 50mV/div

OUT

OUT

: 50mV/div

OUT

CM519

Series

33/49

XCM519 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(15) Load Transient Response (Continued)

DCOUT=1.8V,3.0MHz(PWM Control)
L=1.5μH(NR3015), C

=3.6V, EN1=V

V

IN1

=1mA → 100mA I

I

OUT

1ch : I

V

: 50mV/div V

OUT

=100mA → 1mA I

I

OUT

1ch : I

: 50mV/div V

V

OUT

1ch : I

OUT

2ch 2ch

1ch : I

OUT

2ch 2ch

=10μF(ceramic), CL1=10μF(ceramic), Topr=25℃

IN1

IN1

50μs/div 50μs/div

200μs/div 200μs/div

=1mA → 300mA

OUT

OUT

: 50mV/div

OUT

=300mA → 1mA

OUT

OUT

: 50mV/div

OUT

34/49

X

)

)

)

)

)

)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

●2ch:Regulator Block

(1) Output Voltage vs. Output Current

VR

0.8

=0.7V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

V

BIAS

=3.6V, V

IN2

=1.0V

0.8

VR

=0.7V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

V

=3.6V, Ta=25℃

BIAS

CM519

Series

(V)

0.6

OUT

Ta=-40℃

0.4

Ta=25℃
Ta=85℃

0.2

Output Voltage: VR

0.0
0 100 200 300 400 500 600 700

Output Current: I

VR

=1.2V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

OUT

(mA)

1.4

1.2

(V)

OUT

1.0

0.8

0.6

Ta=-40℃
Ta=25℃
Ta=85℃

0.4

Output Voltage: VR

0.2

0.0
0 100 200 300 400 500 600 700

Output Current: I

OUT

(mA)

V

BIAS

=3.6V, V

IN2

=1.5V

(V)

0.6

OUT

0.4

VIN2=1.0V
VIN2=1.2V
VIN2=1.5V

0.2

Output Voltage: VR

0.0
0 100 200 300 400 500 600 700

Output Current: I

VR

=1.2V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

OUT

(mA)

1.4

1.2

(V)

OUT

1.0

0.8

0.6

VIN2=1.3V
VIN2=1.5V
VIN2=1.8V

0.4

0.2

Output Voltage: VR

0.0
0 100 200 300 400 500 600 700

Output Current: I

OUT

(mA)

V

=3.6V, Ta=25℃

BIAS

VR

=1.8V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

2.0

1.8

(V)

1.6

OUT

1.4

1.2

1.0

Ta=-40℃
Ta=25℃
Ta=85℃

0.8

0.6

0.4

Output Voltage: VR

0.2

0.0
0 100 200 300 400 500 600 700

Output Current: I

OUT

V

BIAS

(mA)

=3.6V, V

IN2

=2.1V

2.0

1.8

(V)

1.6

OUT

1.4

1.2

1.0

0.8

0.6

0.4

Output Voltage: VR

0.2

0.0
0 100 200 300 400 500 600 700

VR

=1.8V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

VIN2=1.9V
VIN2=2.1V
VIN2=2.3V

Output Current: I

OUT

V

=3.6V, Ta=25℃

BIAS

(mA)

35/49

)

)

)

)

)

)

XCM519 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

（2） Output Voltage vs. Bias Voltage

VR

=0.7V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

0.9

(V)

0.8

OUT

V

=1.0V, Ta=25℃

IN2

IOUT=0mA
IOUT=30mA
IOUT=100mA

0.9

(V)

0.8

OUT

VR

=0.7V

OUT

C

=1.0μ F(cer ami c), CL2=4.7μF(ceramic

IN2=CBIAS

V

=1.0V, Ta=25℃

IN2

IOUT=0mA

IOUT=30mA
IOUT=100mA

0.7

0.6

Output Voltage: VR

0.5

1.71.92.12.32.5

Bias Voltage: V

VR

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

=1.2V

BIAS

(V)

V

=1.5V, Ta=25℃

IN2

1.4

(V)

1.3

OUT

IOUT=0mA
IOUT=30mA
IOUT=100mA

1.2

1.1

Output Voltage: VR

1.0

1.7 1.9 2.1 2.3 2.5

Bias Voltage: V

BIAS

(V)

0.7

0.6

Output Voltage: VR

0.5

2.5 3 3.5 4 4.5 5 5.5 6

Bias Voltage: V

VR

OUT

C

=1.0μ F(cer ami c), CL2=4.7μF(ceramic

IN2=CBIAS

=1.2V

BIAS

(V)

1.4

(V)

1.3

OUT

IOUT=0mA
IOUT=30mA
IOUT=100mA

1.2

1.1

Output Voltage: VR

1.0

2.5 3 3.5 4 4.5 5 5.5 6

Bias Voltage: V

BIAS

(V)

V

=1.5V, Ta=25℃

IN2

36/49

VR

=1.8V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

2.0

(V)

1.9

OUT

1.8

1.7

Output Voltage: VR

1.6

1.8 2 2.2 2.4 2.6 2.8 3

Bias Voltage: V

BIAS

(V)

V

=2.1V, Ta=25℃

IN2

IOUT=0mA
IOUT=30mA
IOUT=100mA

VR

=1.8V

OUT

C

=1. 0μF(ceram ic), CL2=4.7μF(ceramic

IN2=CBIAS

2.0

(V)

1.9

OUT

1.8

1.7

Output Voltage: VR

1.6
3 3.5 4 4.5 5 5.5 6

Bias Voltage: V

BIAS

V

=2.1V, Ta=25℃

IN2

IOUT=0mA
IOUT=30m A
IOUT=100mA

(V)

X

)

)

)

)

)

)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(3) Output Voltage vs. Input Voltage

VR

=0.7V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

0.9

(V)

0.8

OUT

V

=3.6V, Ta=25℃

BIAS

IOUT=0mA
IOUT=30mA
IOUT=100mA

0.9

(V)

0.8

OUT

VR

=0.7V

OUT

C

=1. 0μF(ce ram ic), CL2=4.7μF(ceramic

IN2=CBIAS

V

=3.6V, Ta=25℃

BIAS

IOUT=0mA

IOUT=30mA
IOUT=100m A

CM519

Series

0.7

0.6

Output Voltage: VR

0.5

0.5 0.6 0.7 0.8 0.9

Bias Voltage: V

VR

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

=1.2V

BIA S

(V)

V

1.4

(V)

1.3

OUT

IOUT=0mA
IOUT=30m A
IOUT=100m A

1.2

1.1

Output Voltage: VR

1.0
1 1.1 1.2 1.3 1.4

Bias Voltage: V

BIAS

(V)

=3.6V, Ta=25℃

BIAS

0.7

0.6

Output Voltage: VR

0.5
1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3

Bias Voltage: V

VR

OUT

C

=1. 0μF(ce ram ic), CL2=4.7μF(ceramic

IN2=CBIAS

=1.2V

BIA S

(V)

1.4

(V)

1.3

OUT

IOUT=0mA
IOUT=30mA
IOUT=100m A

1.2

1.1

Output Voltage: VR

1.0

1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3

Bias Voltage: V

BIA S

(V)

V

=3.6V, Ta=25℃

BIAS

VR

=1.8V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

2.0

(V)

1.9

OUT

1.8

1.7

Output Voltage: VR

1.6

1.6 1.7 1.8 1.9 2

Bias Voltage: V

BIAS

(V)

V

=3.6V, Ta=25℃

BIAS

IOUT=0mA
IOUT=30mA
IOUT=100mA

2.0

(V)

1.9

OUT

1.8

1.7

Output Voltage: VR

1.6
2 2.2 2.4 2.6 2.8 3

VR

=1.8V

OUT

C

=1. 0μF(ce ram ic), CL2=4.7μF(ceramic

IN2=CBIAS

Bias Voltage: V

BIA S

V

=3.6V, Ta=25℃

BIAS

IOUT=0mA
IOUT=30mA
IOUT=100m A

(V)

37/49

)

)

)

)

)

)

XCM519 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

（4）Dropout Voltage vs. Output Current

VR

=1.2V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

300

250

200

150

VBIAS=3.0V
VBIAS=3.3V
VBIAS=3.6V
VBIAS=4.2V
VBIAS=5.0V

100

50

Dro pou t Vo ltage: Vdif(mV)

0

0 100 200 300 400

　Output Curren t: IOUT(mA)

VR

=1 .2V (Vgs

OUT

C

IN2=CBIAS

(*1)

=1.8V)

=1.0μF(ceramic), CL2=4.7μF(ceramic

400

Ta=-40℃

300

Ta=25℃

Ta=85℃

Ta=25℃

V

BIAS

=3.0V

VR

=1.2V (Vgs

OUT

C

IN2=CBIAS

(*1)

=2.4V)

=1.0μF(ceramic), CL2=4.7μF(ceramic

400

Ta=-40℃

300

Ta=25℃

Ta=85℃

200

100

Dro pou t Voltage: Vdif(mV)

0

0 100 200 300 400

　Output Current: I

VR

=1.2V (Vgs

OUT

C

IN2=CBIAS

OUT

(*1)

=3.0V)

=1.0μF(ceramic), CL2=4.7μF(ceramic

400

Ta=-40℃

300

Ta=25℃

Ta=85℃

(mA)

V

=3.6V

BIAS

V

=4.2V

BIAS

200

100

Dro pou t Vo ltage: Vdif(mV)

0

0 100 200 300 400

　Output Current: I

VR

=1 .2V (Vgs

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

(*1)

OUT

=2.1V)

400

Ta=-40℃

300

Ta=25℃

Ta=85℃

200

100

Dro pou t Vo ltage: Vdif(mV)

0

0 100 200 300 400

　Output Curren t: I

OUT

(mA)

(mA)

200

100

Dro pou t Vo ltage: Vdif(mV)

0

0 100 200 300 400

　Output Current: I

VR

=1.2V (Vgs

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

V

=3.3V

BIAS

(*1)

OUT

=3.8V)

(mA)

V

=5.0V

BIAS

400

Ta=-40℃

300

Ta=25℃

Ta=85℃

200

100

Dro pou t Vo ltage: Vdif(mV)

0

0 100 200 300 400

　Output Curren t: I

OUT

(mA)

*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of V

A value of the dropout voltage is determined by the value of the Vgs.

38/49

BIAS

- V

OUT

.

(T)

X

)

)

)

)

)

)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

CM519

Series

(5) Supply Bias Current vs. Bias Voltage

VR

=0.7V

OUT

C

=1.0μ F(cera mic ), CL2=4.7μF(ceramic

IN2=CBIAS

40

(μA)

30

BIAS

20

10

Su pply Bias Curren t: I

0

0123456

=1.2V

BIAS

(V)

Bias Voltage: V

VR

OUT

C

=1.0μ F(cera mic ), CL2=4.7μF(ceramic

IN2=CBIAS

40

(μA)

30

BIAS

V

Ta=-40℃

Ta=25℃

Ta=85℃

V

IN2

IN2

=1.0V

=1.5V

(6) Supply Input Current vs. Input Voltage

VR

=0.7V

OUT

C

=1.0μ F(cera mic ), CL2=4.7μF(ceramic

IN2=CBIAS

2.0

(μA)

IN

1.5

1.0

0.5

Su pply Input Curren t: I

0.0

00.51 1.522.53

=1.2V

(V)

IN

Input Voltage: V

VR

OUT

C

=1.0μ F(cera mic ), CL2=4.7μF(ceramic

IN2=CBIAS

3.0

(μA)

2.5

IN

2.0

V

Ta=-40℃

Ta=25℃

Ta=85℃

V

Ta=-40℃

Ta=25℃

Ta=85℃

BIAS

BIAS

=3.6V

=3.6V

20

Ta=-40℃

10

Su pply Bias Curren t: I

0

Ta=25℃

Ta=85℃

0123456

=1.8V

BIAS

(V)

V

=2.1V

IN2

40

Bias Voltage: V

VR

OUT

C

=1.0μ F(cera mic ), CL2=4.7μF(ceramic

IN2=CBIAS

(μA)

30

BIAS

1.5

1.0

0.5

Su pply In put Current: I

0.0

00.511.522.53

=1.8V

(V)

IN

V

=3.6V

BIAS

Input Voltage: V

VR

OUT

C

=1.0μ F(cera mic ), CL2=4.7μF(ceramic

IN2=CBIAS

4.0

3.5

(μA)

IN

3.0

2.5

20

2.0

1.5

10

Su pply Bias Cu rrent: I

0

0123456

Ta=-40℃

Ta=25℃

Ta=85℃

1.0

0.5

Supply Input Current: I

0.0

00.511.522.53

Ta=-40℃
Ta=25℃
Ta=85℃

Bias Voltage: V

BIAS

(V)

Input Voltage: V

(V)

IN

39/49

)

)

)

)

)

)

XCM519 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(7) Output Voltage vs. Ambient Temperature

VR

=0.7V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

V

BIAS

0.73

(V)

0.72

OUT

0.71

0.70

0.69

IOUT=1mA

0.68

Output Voltage: VR

IOUT=30mA
IOUT=100mA

0.67

-50 -25 0 25 50 75 100

Ambient Te mperature: Ta(℃)

VR

=1.2V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

V

BIAS

1.23

(V)

1.22

OUT

1.21

1.20

1.19

1.18

Output Voltage: VR

IOUT=1mA
IOUT=30mA
IOUT=100mA

1.17

-50 -25 0 25 50 75 100

Ambient Temperature: Ta(℃)

=3.6V, V

=3.6V, V

IN2

IN2

=1.0V

=1.5V

(8) Supply Bias Current vs. Ambient Temperature

VR

=0.7V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

V

BIAS

=3.6V, V

40

(μA)

35

BIAS

30

25

20

Su pply Bias Cu rrent: I

15

-50 -25 0 25 50 75 100

Ambient Temperature: Ta(℃)

VR

=1.2V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

V

BIAS

=3.6V, V

40

(μA)

35

BIAS

30

25

20

Su pply Bias Cu rre nt: I

15

-50 -25 0 25 50 75 100

Ambient Temperature: Ta(℃)

IN2

IN2

=1.0V

=1.5V

1.83

(V)

1.82

OUT

1.81

1.80

1.79

1.78

Output Voltage: VR

1.77

40/49

VR

=1.8V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

V

=3.6V, V

BIAS

IOUT=1mA
IOUT=30mA
IOUT=100mA

IN2

=2.1V

-50 -25 0 25 50 75 100

Ambient Temperature: Ta(℃)

VR

=1.8V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2=CBIAS

40

(μA)

35

BIAS

30

25

20

Supply Bias Current: I

15

-50 -25 0 25 50 75 100

Ambient Temperature: Ta(℃)

V

BIAS

=3.6V, V

IN2

=2.1V

X

)

)

)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(9) Supply Input Current vs. Ambient Temperature

VR

=0.7V

OUT

C

=1. 0μF(ce ram ic), CL2=4.7μF(ceramic

IN2=CBIAS

2.0

(μA)

IN

1.5

1.0

0.5

Su pply I nput Cur re nt: I

0.0

-50 -25 0 25 50 75 100

V

BIAS

=3.6V, V

IN2

=1.0V

CM519

Series

Ambient Temperature: Ta(℃)

VR

=1.2V

OUT

C

=1. 0μF(ce ram ic), CL2=4.7μF(ceramic

IN2=CBIAS

2.0

(μA)

IN

1.5

1.0

0.5

Supply I nput Cur re nt: I

0.0

-50 -25 0 25 50 75 100

Ambient Temperature: Ta(℃)

VR

=1.8V

OUT

C

=1. 0μF(ce ram ic), CL2=4.7μF(ceramic

IN2=CBIAS

2.0

V

V

BIAS

BIAS

=3.6V, V

=3.6V, V

IN2

IN2

=1.5V

=2.1V

(μA)

IN

1.5

1.0

0.5

Supply I nput Cur re nt: I

0.0

-50 -25 0 25 50 75 100

Ambient Temperature: Ta(℃)

41/49

XCM519 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(10) Bias Transient Response

VR

=1.0μF(ceramic), C

C

IN2

1.1

=0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

V

=1.0V, I

IN2

=30mA, tr=tf= 5.0μsec, Ta=25

OUT

℃

5

1.1

=0.7V

OUT

Bias Vol tage

1.0

4

1.0

VR

=1.0μF(ceramic), C

C

IN2

Bias Vol tage

OUT

=0.7V

=0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

V

=1.0V, I

IN2

OUT

=200mA, tr=tf= 5.0μsec, Ta=25

5

4

℃

0.9

(V)

OUT

0.8

0.7

Output Vol tage VR

0.6

Output Vol tage

0.5

Ti me (40us ec/div)

VR

=1.2V

OUT

=1.0μF(ceramic), C

C

IN2

1.6

=0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

V

=1.5V, I

IN2

=30mA, tr=tf= 5.0μsec, Ta=25

OUT

Bias Vol tage

1.5

(V)

1.4

OUT

1.3

1.2

Output V oltage VR

1.1

Output Vol tage

3

(V)

BIAS

2

Bias Voltage V

1

0

-1

0.9

(V)

OUT

0.8

0.7

Output Vol tage VR

0.6

Output Vol tage

0.5

3

(V)

BIAS

2

Bias Voltage V

1

0

-1

Time (40usec/div)

VR

=1.2V

OUT

=1.0μF(ceramic), C

C

℃

5

1.6

IN2

=0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

V

=1.5V, I

IN2

=200mA, tr=tf= 5.0μsec, Ta=25

OUT

℃

5

Bias Voltag e

4

3

(V)

BIAS

2

Bias Vol tage V

1

0

1.5

(V)

1.4

OUT

1.3

1.2

Output V oltage VR

1.1

Output Voltage

4

3

(V)

BIAS

2

Bias Vol tage V

1

0

42/49

1.0

Time (40usec/di v)

VR

=1.8V

OUT

=1.0μF(ceramic), C

C

IN2

2.2

=0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

V

=2.1V, I

IN2

=30mA, tr=tf= 5.0μsec, Ta=25

OUT

Bias Vol tage

2.1

(V)

2.0

OUT

1.9

1.8

Output Vol tage VR

1.7

Output Voltage

1.6

Ti me (40us ec/div)

-1

1.0

-1

Ti me (40usec /div)

VR

=1.8V

OUT

=1.0μF(ceramic), C

C

℃

5

2.1

IN2

=0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

V

=2.1V, I

IN2

=200mA, tr=tf= 5.0μsec, Ta=25

OUT

℃

5

Bias Vol tage

4

3

(V)

BIAS

2

Bias Voltage V

1

0

-1

2.0

(V)

1.9

OUT

1.8

1.7

Output Vol tage VR

1.6

Output Voltag e

1.5

4

3

(V)

BIAS

2

Bias Voltage V

1

0

-1

Time (40usec/div)

X

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(11) Input Transient Response

VR

=0.7V

C

=0.1μF(ceramic), C

IN2

1.1

OUT

=1.0μF(ceramic) , CL2=4.7μF(ceramic)

BIAS

=3.6V, I

V

BIAS

=30mA, tr= tf=5.0μsec, Ta=25

OUT

℃

C

3

1.1

Input Voltage

1.0

2

1.0

VR

=0.1μF(cerami c), C

IN2

Input Voltage

=0.7V

OUT

=1.0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

=3.6V, I

V

BIAS

=200mA, tr=tf=5.0μsec, Ta=25

OUT

CM519

Series

℃

3

2

(V)

0.9

OUT

0.8

0.7

Output V oltage VR

0.6

Output Voltag e

0.5

Time (20usec/di v)

Time ( 20μs / div) Time ( 20μs / div)

VR

=1.2V

C

IN2

1.6

OUT

=0.1μF(ceramic), C

V

BIAS

=1.0μF(ceramic) , CL2=4.7μF(ceramic)

BIAS

=3.6V, I

=30mA, tr= tf=5.0μsec, Ta=25

OUT

1

(V)

IN2

0

Input Voltage V

-1

-2

-3

℃

4

Input Voltage

1.5

(V)

1.4

OUT

1.3

1.2

Output V oltage VR

1.1

Output V oltag e

3

2

(V)

IN2

1

Input Voltage V

0

-1

(V)

0.9

OUT

0.8

0.7

Output V oltage VR

0.6

Output Voltag e

0.5

1

(V)

IN2

0

Input Voltage V

-1

-2

-3

Ti me (20usec /div)

VR

=1.2V

C

1.6

OUT

=0.1μF(cerami c), C

IN2

=1.0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

=3.6V, I

V

BIAS

=200mA, tr=tf=5.0μsec, Ta=25

OUT

℃

4

Input Voltage

1.5

(V)

1.4

OUT

1.3

1.2

Output V oltage VR

1.1

Output Voltag e

3

2

(V)

IN2

1

Input Voltage V

0

-1

1.0

Time (20usec/di v)

Time ( 20μs / div) Time ( 20μs / div)

VR

=1.8V

C

IN2

2.2

OUT

=0.1μF(ceramic), C

V

BIAS

=1.0μF(ceramic) , CL2=4.7μF(ceramic)

BIAS

=3.6V, I

=30mA, tr= tf=5.0μsec, Ta=25

OUT

Input Vol tage

2.1

(V)

2.0

OUT

1.9

1.8

Output Vol tage VR

1.7

1.6

Output Voltag e

Time ( 20μs / div) Time ( 20μs / div)

Time (20usec/di v)

-2

1.0

-2

Ti me (20usec /div)

VR

=1.8V

℃

C

5

2.2

OUT

=0.1μF(cerami c), C

IN2

=1.0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

=3.6V, I

V

BIAS

=200mA, tr=tf=5.0μsec, Ta=25

OUT

℃

5

Input Voltage

4

3

(V)

IN

2

Input Voltage V

1

0

-1

2.1

(V)

2.0

OUT

1.9

1.8

Output Vol tage VR

1.7

Output Voltag e

1.6

4

3

(V)

IN2

2

Input Voltage V

1

0

-1

Ti me (20usec /div)

43/49

XCM519 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(12) Load Transient Response

VR

=0.7V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic)

IN2=CBIAS

=3.6V, V

V

0.9

BIAS

=1.0V, tr= tf=5.0μsec, Ta=25

IN2

℃

500

0.9

Output Voltag e

0.7

400

0.7

VR

=0.7V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic)

IN2=CBIAS

=3.6V, V

V

BIAS

=1.0V, tr=tf= 5.0μsec, Ta=25

IN2

Output V oltag e

℃

500

400

(V)

OUT

0.5

0.3

Output Voltage VR

0.1

Output Current

100mA

300

200

100

(mA)

OUT

Output C urr ent I

10mA

-0.1

1.4

Time ( 45μs / div) Time ( 45μs / div)

Ti me (45usec /div)

VR

=1.2V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic)

IN2=CBIAS

=3.6V, V

V

BIAS

=1.5V, tr=tf= 5.0μsec, Ta=25

IN2

0

℃

500

Output V oltag e

1.2

(V)

OUT

1.0

0.8

Output V oltage VR

0.6

Output C urr ent

100mA

400

300

200

100

(mA)

OUT

Output C urr ent I

10mA

0.4

Time ( 45μs / div) Time ( 45μs / div)

Ti me (45usec/ div)

0

(V)

OUT

0.5

0.3

Output Voltage VR

Output C urr ent

200mA

0.1

300

200

100

(mA)

OUT

Output C urr ent I

10mA

-0.1

0

Ti me (45usec /div)

VR

=1.2V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic)

IN2=CBIAS

=3.6V, V

V

1.4

BIAS

=1.5V, tr=tf= 5.0μsec, Ta=25

IN2

℃

500

Output Volt age

1.2

(V)

OUT

1.0

0.8

Output Volt age VR

Output C urr ent

200mA

0.6

400

300

200

100

(mA)

OUT

Output C urr ent I

10mA

0.4

0

Ti me (45usec /div)

44/49

VR

=1.8V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic)

IN2=CBIAS

=3.6V, V

V

2.0

BIAS

=2.1V, tr=tf= 5.0μsec, Ta=25

IN2

℃

500

2.0

Output V oltag e

1.8

(V)

OUT

1.6

1.4

Output V oltage VR

1.2

Output C urr ent

100mA

400

300

200

100

1.8

(mA)

OUT

(V)

OUT

1.6

1.4

Output C urr ent I

Output V oltage VR

1.2

10mA

1.0

0

1.0

Ti me (45usec/ div)

VR

=1.8V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic)

IN2=CBIAS

=3.6V, V

V

BIAS

=2.1V, tr=tf=5.0μsec, Ta=25

IN2

Output Volt age

Output C urr ent

Ti me (45usec /div)

200mA

10mA

℃

500

400

(mA)

300

OUT

200

Output C urr ent I

100

0

X

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(13) CE Rising Response Time

VR

=0.7V

OUT

C

=1.0μF(ceramic) , CL2=4.7μF(ceramic)

IN2=CBIAS

=1.0V, V

=3.6V, I

V

IN2

3.0

BIAS

=30mA, tr= tf=5.0μsec, Ta=25

OUT

℃

4

3.0

V

=1.0V, V

IN2

VR

=0.7V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic)

IN2=CBIAS

=3.6V, I

BIAS

=200mA, tr=tf=5.0μsec, Ta=25

OUT

CM519

Series

℃

4

2.5

EN2 I nput Voltag e

2.0

(V)

OUT

1.5

1.0

Output Vol tage VR

Output Voltag e

0.5

0.0

Ti me (100usec /div)

3

2.5

3

EN2 Input Vol tage

(V)

2

EN2

1

0

EN2 I nput Voltage V

-1

-2

2.0

(V)

OUT

1.5

1.0

Output Vol tage VR

Output Voltag e

0.5

0.0

(V)

2

EN2

1

0

EN2 I nput Voltage V

-1

-2

Ti me (100usec /div)

Time ( 100μs / div) Time ( 100μs / div)

VR

=1.2V

OUT

C

=1.0μF(ceramic) , CL2=4.7μF(ceramic)

IN2=CBIAS

=1.5V, V

=3.6V, I

V

IN2

3.0

BIAS

2.5

=30mA, tr= tf=5.0μsec, Ta=25

OUT

℃

4

3

3.0

2.5

EN2 I nput Voltag e

(V)

2.0

OUT

1.5

Output V oltag e

(V)

2

EN2

1

(V)

2.0

OUT

1.5

V

VR

=1.5V, V

IN2

=1.2V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic)

IN2=CBIAS

=3.6V, I

BIAS

=200mA, tr=tf=5.0μsec, Ta=25

OUT

EN2 Input Vol tage

Output V oltag e

℃

4

3

(V)

2

EN2

1

1.0

Output V oltage VR

0.5

0.0

Ti me (100usec /div)

Time ( 100μs / div) Time ( 100μs / div)

VR

=1.8V

OUT

C

=1.0μF(ceramic) , CL2=4.7μF(ceramic)

IN2=CBIAS

=2.1V, V

=3.6V, I

V

IN2

3.0

BIAS

2.5

2.0

(V)

OUT

=30mA, tr= tf=5.0μsec, Ta=25

OUT

EN2 Input Voltage

1.5

1.0

Output V oltage VR

0.5

0.0

Time ( 100μs / div) Time ( 100μs / div)

Ti me (100usec /div)

Output V oltag e

0

EN2 Input Voltage V

-1

-2

1.0

Output V oltage VR

0.5

0.0

0

EN2 Input Voltage V

-1

-2

Ti me (100usec /div)

VR

=1.8V

OUT

C

=1.0μF(ceramic), CL2=4.7μF(ceramic)

IN2=CBIAS

=2.1V, V

=3.6V, I

℃

4

3

(V)

2

CE

1

0

EN2 I nput Voltage V

-1

-2

3.0

2.5

2.0

(V)

OUT

1.5

1.0

Output V oltage VR

0.5

0.0

V

IN2

BIAS

=200mA, tr=tf=5.0μsec, Ta=25

OUT

EN2 Input Voltage

Output Voltag e

℃

4

3

(V)

2

EN2

1

0

EN2 I nput Voltage V

-1

-2

Ti me (100usec /div)

45/49

XCM519 Series

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

(14) VIN Rising Response Time

VR

=0.7V

C

=0.1μF(ceramic), C

IN2

2.5

OUT

=1.0μF(ceramic) , CL2=4.7μF(ceramic)

BIAS

=3.6V, I

V

BIAS

=30mA, tr= tf=5.0μsec, Ta=25

OUT

℃

C

3

2.5

VR

=0.1μF(cerami c), C

IN2

=0.7V

OUT

=1.0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

=3.6V, I

V

BIAS

=200mA, tr=tf=5.0μsec, Ta=25

OUT

℃

3

2.0

(V)

OUT

1.5

1.0

Input Vol tage

Output Voltag e

Output Vol tage VR

0.5

0.0

Ti me (100usec /div)

VR

=1.2V

C

IN2

2.5

2.0

(V)

OUT

1.5

OUT

=0.1μF(ceramic), C

V

BIAS

=1.0μF(ceramic) , CL2=4.7μF(ceramic)

BIAS

=3.6V, I

=30mA, tr= tf=5.0μsec, Ta=25

OUT

Input Vol tage

Output V oltag e

1.0

Output V oltage VR

0.5

2

(V)

1

IN

0

Input Voltage V

-1

-2

2.0

(V)

OUT

1.5

1.0

Input Voltage

Output Voltag e

Output Vol tage VR

0.5

0.0

2

(V)

1

IN

0

Input Voltage V

-1

-2

Ti me (100usec /div)

VR

=1.2V

℃

C

3

2

(V)

1

IN

0

Input Voltage V

-1

2.5

2.0

(V)

OUT

1.5

1.0

Output V oltage VR

0.5

OUT

=0.1μF(cerami c), C

IN2

=1.0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

=3.6V, I

V

BIAS

=200mA, tr=tf=5.0μsec, Ta=25

OUT

Input Voltage

Output V oltag e

℃

3

2

(V)

1

IN

0

Input Voltage V

-1

0.0

Ti me (100usec /div)

VR

=1.8V

C

2.5

OUT

=0.1μF(ceramic), C

IN2

=1.0μF(ceramic) , CL2=4.7μF(ceramic)

BIAS

=3.6V, I

V

BIAS

=30mA, tr= tf=5.0μsec, Ta=25

OUT

Input Voltage

2.0

(V)

OUT

1.5

1.0

Output V oltage VR

0.5

Output V oltag e

0.0

Ti me (100usec /div)

-2

0.0

-2

Ti me (100usec /div)

VR

=1.8V

℃

C

3

2.5

OUT

=0.1μF(cerami c), C

IN2

=1.0μF(ceramic), CL2=4.7μF(ceramic)

BIAS

=3.6V, I

V

BIAS

=200mA, tr=tf=5.0μsec, Ta=25

OUT

℃

3

Input Vol tage

2

(V)

1

IN

0

Input Voltage V

-1

-2

2.0

(V)

OUT

1.5

1.0

Output V oltage VR

0.5

Output Voltag e

0.0

2

(V)

1

IN

0

Input Voltage V

-1

-2

Ti me (100usec /div)

46/49

X

)

)

)

)

)

)

■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)

CM519

Series

(15) Bias Voltage Ripple Rejection Rate

VR

=0.7V

OUT

C

=0μF, C

BIAS

V

=3.6VDC+0.2Vp-pAC, V

BIAS

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2

=1.0V, I

IN2

80
70
60
50

(dB)

40

BIAS _PSRR

30

V

20
10

0

0.01 0.1 1 10 100 1000 10000
Frequency (kHz)

VR

=1.2V

OUT

C

=0μF, C

BIAS

V

=3.6VDC+0.2Vp-pAC, V

BIAS

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2

=1.5V, I

IN2

80
70
60
50

(dB)

40

BIAS _PSRR

30

V

20
10

0

0.01 0.1 1 10 100 1000 10000
Frequency (kHz)

=30mA, Ta=25℃

OUT

=30mA, Ta=25℃

OUT

(16) Input Voltage Ripple Rejection Rate

VR

=0.7V

OUT

C

=1.0μF(ceramic), C

BIAS

V

=3.6V, V

BIAS

=1.0VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃

IN2

=0μF, CL2=4.7μF(ceramic

IN2

80
70
60
50

(dB)

40

IN_PSRR

30

V

20
10

0

0.01 0.1 1 10 100 1000 10000
Frequency (kHz)

VR

=1.2V

OUT

C

=1.0μF(ceramic), C

BIAS

V

=3.6V, V

BIAS

=1.5VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃

IN2

=0μF, CL2=4.7μF(ceramic

IN2

80
70
60
50

(dB)

40

IN_PSRR

30

V

20
10

0

0.01 0.1 1 10 100 1000 10000
Frequency (kHz)

VR

VR

=1.8V

OUT

C

=0μF, C

BIAS

V

=3.6VDC+0.2Vp-pAC, V

BIAS

=1.0μF(ceramic), CL2=4.7μF(ceramic

IN2

=2.1V, I

IN2

=30mA, Ta=25℃

OUT

80
70
60
50

(dB)

40

BIAS _PSRR

30

V

20
10

0

0.01 0.1 1 10 100 1000 10000
Frequency (kHz)

C

=1.0μF(ceramic), C

BIAS

V

=3.6V, V

BIAS

80
70
60
50

(dB)

40

IN_PSRR

30

V

20
10

0

0.01 0.1 1 10 100 1000 10000

=1.8V

OUT

=0μF, CL2=4.7μF(ceramic

=2.1VDC+0.2Vp-pAC, IOUT=30mA, Ta=25℃

IN2

IN2

Frequency (kHz)

47/49

XCM519 Series

■PACKAGING INFORMATION

USP-12B01

●

0.25±0.05

0.7±0.05

●USP-12B01 Reference Pattern Layout ●USP-12B01 Reference Metal Mask Design

2.8±0.05

1pin INDENT

(0.4) (0.4) (0.4) (0.4) (0.4)

(0.15) (0.25)

123456

78912 11 10

1.2±0.05

1.2±0.05

0.2±0.05

48/49

X

CM519

Series

1. The products and product specifications contained herein are subject to change without

notice to improve performance characteristics. Consult us, or our representatives

before use, to confirm that the information in this datasheet is up to date.

2. We assume no responsibility for any infringement of patents, patent rights, or other

rights arising from the use of any information and circuitry in this datasheet.

3. Please ensure suitable shipping controls (including fail-safe designs and aging

protection) are in force for equipment employing products listed in this datasheet.

4. The products in this datasheet are not developed, designed, or approved for use with

such equipment whose failure of malfunction can be reasonably expected to directly

endanger the life of, or cause significant injury to, the user.

(e.g. Atomic energy; aerospace; transport; combustion and associated safety

equipment thereof.)

5. Please use the products listed in this datasheet within the specified ranges.

Should you wish to use the products under conditions exceeding the specifications,

please consult us or our representatives.

6. We assume no responsibility for damage or loss due to abnormal use.

7. All rights reserved. No part of this datasheet may be copied or reproduced without the

prior permission of TOREX SEMICONDUCTOR LTD.

49/49