TEXAS INSTRUMENTS XTR110 Technical data

SBOS141A – JANUARY 1984 – REVISED AUGUST 2003
PRECISION VOLTAGE-TO-CURRENT
CONVERTER/TRANSMITTER
XTR110
FEATURES
4mA TO 20mA TRANSMITTER
SELECTABLE INPUT/OUTPUT RANGES:
0V to +5V, 0V to +10V Inputs 0mA to 20mA, 5mA to 25mA Outputs Other Ranges
0.005% MAX NONLINEARITY, 14 BIT
PRECISION +10V REFERENCE OUTPUT
WIDE SUPPLY RANGE: 13.5V to 40V
DESCRIPTION
The XTR110 is a precision voltage-to-current converter designed for analog signal transmission. It accepts inputs of 0 to 5V or 0 to 10V and can be connected for outputs of 4 to 20mA, 0 to 20mA, 5 to 25mA and many other commonly used ranges.
A precision on-chip metal film resistor network provides input scaling and current offsetting. An internal 10V voltage reference can be used to drive external circuitry.
The XTR110 is available in 16-pin plastic DIP, ceramic DIP and SOL-16 surface-mount packages. Commercial and in­dustrial temperature range models are available.
APPLICATIONS
INDUSTRIAL PROCESS CONTROL
PRESSURE/TEMPERATURE TRANSMITTERS
CURRENT-MODE BRIDGE EXCITATION
GROUNDED TRANSDUCER CIRCUITS
CURRENT SOURCE REFERENCE FOR DATA
ACQUISITION
PROGRAMMABLE CURRENT SOURCE FOR
TEST EQUIPMENT
POWER PLANT/ENERGY SYSTEM
MONITORING
+V
V
REF
V
REF
V
REF
V
IN1
V
Common
Force
Sense
Adjust
(10V)
V
REF
(5V)
IN2
15
12
11
4
3
In
R
R
5
2
+10V
Reference
1
R
3
R
5
R
4
A
2
1
R
8
A
R
R
16
1
13
14
7
6
8
10
9
CC
Source Resistor
Source Sense
Gate Drive
Offset (zero) Adjust
Span Adjust
4mA Span
16mA Span
R
9
2
7
6
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 1984-2003, Texas Instruments Incorporated
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SPECIFICATIONS
ELECTRICAL
At T
= +25°C and V
A
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS TRANSMITTER
Transfer Function Input Range: V
Current, I
O
Nonlinearity 16mA/20mA Span Offset Current, I
Initial
vs Temperature vs Supply, V
Span Error I
Initial
vs Temperature
vs Supply, V Output Resistance From Drain of FET (Q Input Resistance V
Dynamic Response
Settling Time To 0.1% of Span 15 * µs
Slew Rate 1.3 * mA/µs
VOLTAGE REFERENCE
Output Voltage +9.95 +10 +10.05 +9.98 * +10.02 V
vs Temperature 35 50 15 30 ppm/°C vs Supply, V vs Output Current Load Regulation 0.0005 0.01 * * %/mA
vs Time 100 * ppm/1k hrs Trim Range –0.100 +0.25 * * V Output Current Specified Performance 10 * mA
POWER SUPPLY
Input Voltage, V Quiescent Current Excluding I
TEMPERATURE RANGE
Specification:AG, BG –40 +85 * * °C
Operating:AG, BG –55 +125 * * °C
KP, KU –25 +85 °C
= +24V and R
CC
= 250**, unless otherwise specified.
L
XTR110AG, KP, KU XTR110BG
(5)
IN1
V
IN2
OS
CC
CC
Specified Performance 0 +10 * * V Specified Performance 0 +5 * * V
Specified Performance
Derated Performance
IO = 4mA
(1) (1) (1)
= 20mA
O
(1) (1) (1)
IN1
V
IN2
V
REF
(1)
(1)
(2)
(1)
)
EXT
420* *mA 040* *mA
(3)
In 19 * k
IO = 10 [(V
0.01 0.025 0.002 0.005 % of Span
0.2 0.4 0.02 0.1 % of Span
0.0003 0.005 * 0.003 % of Span/°C
0.0005 0.005 * * % of Span/V
0.3 0.6 0.05 0.2 % of Span
0.0025 0.005 0.0009 0.003 % of Span/°C
0.003 0.005 * * % of Span/V
10 x 10
27 * k 22 * k
In/16) + (V
REF
9
/4) + (V
IN1
IN2
/2)] /R
SPAN
*
To 0.01% of Span 20 * µs
CC
CC
Line Regulation 0.0002 0.005 * * %/V
+13.5 +40 * * V
O
3 4.5 * * mA
KP, KU 0 +70 °C
* Specifications same as AG/KP grades. ** Specifications apply to the range of RL shown in Typical Performance Curves. NOTES: (1) Including internal reference. (2) Span is the change in output current resulting from a full-scale change in input voltage. (3) Within compliance range limited
by (+V
– 2V) +VDS required for linear operation of the FET. (4) For V
CC
be damaged. See section, “Input Voltage Range”.
ABSOLUTE MAXIMUM RATINGS
Power Supply, +VCC............................................................................ 40V
Input Voltage, V
See text regarding safe negative input voltage range.
, V
, V
IN1
IN2
....................................................... +V
REF IN
Storage Temperature Range: A, B ................................ –55°C to +125°C
K, U ..................................–40°C to +85°C
Lead Temperature
(soldering, 10s) G, P ................................................................... 300°C
(wave soldering, 3s) U ................................................................ 260°C
Output Short-Circuit Duration, Gate Drive and V
Output Current Using Internal 50Ω Resistor ................................... 40mA
Force................................ Continuous to common and +V
REF
2
adjustment circuit see Figure 3. (5) For extended I
REF
ELECTROSTATIC
CC
CC
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation proce­dures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
DISCHARGE SENSITIVITY
drive circuit see Figure 4. (5) Unit may
REF
XTR110
SBOS141A
PIN CONFIGURATION
Top View
Source Resistor
Common
V
In
REF
V
(10V)
IN1
V
(5V)
IN2
Zero Adjust Zero Adjust
Span Adjust
1 2 3 4 5 6 7 8
16
+V
15
V
REF
14
Gate Drive
13
Source Sense
12
V
REF
11
V
REF
10
4mA Span
9
16mA Span
CC
Force
Sense Adjust
ORDERING INFORMATION
PRODUCT PACKAGE RANGE
XTR110AG 16-Pin Ceramic DIP –40°C to +85°C XTR110BG 16-Pin Ceramic DIP –40°C to +85°C XTR110KP 16-Pin Plastic DIP 0°C to +70°C XTR110KU SOL-16 Surface-Mount 0°C to +70°C
TEMPERATURE
PACKAGE INFORMATION
PRODUCT PACKAGE NUMBER
PACKAGE DRAWING
XTR110AG 16-Pin Ceramic DIP 109 XTR110BG 16-Pin Ceramic DIP 109 XTR110KP 16-Pin Plastic DIP 180 XTR110KU SOL-16 Surface-Mount 211
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.
(1)
TYPICAL PERFORMANCE CURVES
TA = +25°C, VCC = 24VDC, RL = 250, unless otherwise noted.
V
LINE REGULATION vs FREQUENCY
10
1
(%/V)
CC
0.1
/ V
REF
V
0.01
0.001 1 10 100 1k 10k 100k
100
80
60
40
Above Ambient (°C)
20
Junction Temperature Rise
REF
JUNCTION TEMPERATURE RISE
vs V
Max. TJ = +175°C
= 70°C/W
JA
Ripple Frequency (Hz)
OUTPUT CURRENT
REF
Max. Temp. Rise
for +85°C Ambient
VCC = +40V
V
= +24V
CC
VCC = +15V
I
POWER SUPPLY REGULATION vs FREQUENCY
O
10
1
0.1
(% of span/V)
CC
/ V
O
0.01
I
0.001 1 10 100 1k 10k 100k
Ripple Frequency (Hz)
TOTAL OUTPUT ERROR vs TEMPERATURE
2
1
0
Error (% of span)
–1
AG
BG
AG
0
XTR110
SBOS141A
280104
Output Current (mA)
V
REF
(I
has minimal effect on TJ)
OUT
–2
6
40
200 20406080
Temperature (°C)
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3
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25°C, VCC = 24VDC, RL = 250, unless otherwise noted.
5
4
)
O
3
2
(mA) (excluding I
CC
I
1
0
40
200 20406080
V
IN
0V
0V
Error
I
O
(0.01% of
Span/Box)
I
vs TEMPERATURE
CC
IO = 20mA
IO = 4mA
Temperature (°C)
SETTLING TIME WITH NEG VIN STEP
+V
vs V
L
CC
I
= 20mA
O MAX
I
= 40mA
O MAX
(V)
CC
2500
2000
1500
()
L
R
1000
500
0
MAXIMUM R
20 3515 4025 30
PULSE RESPONSE
V
IN
0V
I
O
into
500
0V
SETTLING TIME WITH POS VIN STEP
V
IN
0V
0V
Error
I
O
(0.01% of
Span/Box)
4
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XTR110
SBOS141A
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required for 0 to 10V input and 4 to 20mA output. Other input voltage and output current ranges require changes in connections of pins 3, 4, 5, 9 and 10 as shown in the table of Figure 1.
The complete transfer function of the XTR110 is:
(V
)16(V
10 + +
REF IN
IO = (1)
R
is the internal 50Ω resistor, R9, when connected as
SPAN
shown in Figure 1. An external R different output current ranges as described later.
EXTERNAL TRANSISTOR
An external pass transistor, Q Figure 1. This transistor conducts the output signal current. A P-channel MOSFET transistor is recommended. It must have a voltage rating equal or greater than the maximum power supply voltage. Various recommended types are shown in Table I.
)
(V
IN1
4
R
SPAN
can be connected for
SPAN
, is required as shown in
EXT
)
IN2
2
MANUFACTURER PART NO. BV
Ferranti ZVP1304A 40V 20V TO-92
International Rectifier IRF9513 60V 20V TO-220
Motorola MTP8P08 80V 20V TO-220 RCA RFL1P08 80V 20V TO-39
Siliconix VP0300B 30V 40V TO-39 (preferred) VP0300L 30V 40V TO-92
Supertex VP1304N2 40V 20V TO-220
NOTE: (1) BV breakdown voltage.
ZVP1304B 40V 20V TO-39 ZVP1306A 60V 20V TO-92 ZVP1306B 60V 20V TO-39
RFT2P08 80V 20V TO-220
VP0300M 30V 40V TO-237 VP0808B 80V 40V TO-39 VP0808L 80V 40V TO-92 VP0808M 80V 40V TO-237
VP1304N3 40V 20V TO-92 VP1306N2 60V 20V TO-220 VP1306N3 60V 20V TO-92
Drain-source breakdown voltage. BVGS—Gate-source
DSS
DSS
(1)
BV
GS
(1)
PACKAGE
TABLE I. Available P-Channel MOSFETs.
V
0 to 10V
CC
+
1µF
Short Connection (see text)
Zero Adjust
Span Adjust
4mA Span 16mA Span
+V
13.5 to 40V
I
O
Q
EXT
P-Channel MOSFET (see text)
I
O
4 to 20mA
CC
R
L
(250typ)
+V
Force
15
Sense
12
V
11
REF
Adj.
4
IN
3
5
2
15k
R
R
1
R
2
5
16.25k
5k
INPUT OUTPUT
RANGE (V) RANGE (mA) PIN 3 PIN 4 PIN 5 PIN 9 PIN 10
0-10 0-20 Com Input Com Com Com 2-10 4-20 Com Input Com Com Com 0-10 4-20 +10V Ref Input Com Com Open 0-10 5-25 +10V Ref Input Com Com Com
0-5 0-20 Com Com Input Com Com 1-5 4-20 Com Com Input Com Com 0-5 4-20 +10V Ref Com Input Com Open 0-5 5-25 +10V Ref Com Input Com Com
Reference
R
3
20k
R
4
10k
+10V
IO/10
IO/10
R
8
500
R
R
6
R
6250
7
1562.5
9
50
16
1
13
14
7
6
8
10
9
FIGURE 1. Basic Circuit Connection.
XTR110
SBOS141A
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5
If the supply voltage, +VCC, exceeds the gate-to-source breakdown voltage of Q (drain of Q
) is broken, Q
EXT
source breakdown voltage is lower than +VCC, Q
, and the output connection
EXT
could fail. If the gate-to-
EXT
EXT
can be protected with a 12V zener diode connected from gate to source.
Two PNP discrete transistors (Darlington-connected) can be used for Q
—see Figure 2. Note that an additional capaci-
EXT
tor is required for stability. Integrated Darlington transistors are not recommended because their internal base-emitter resistors cause excessive error.
XTR110
+V
CC
16
2
47nF
1 13 14
0.047µF
2N2907
etc.
TIP30B
etc.
I
OUT
R
L
TRANSISTOR DISSIPATION
Maximum power dissipation of Q
depends on the power
EXT
supply voltage and full-scale output current. Assuming that the load resistance is low, the power dissipated by Q
P
= (+VCC) I
MAX
FS
EXT
is:
(2)
The transistor type and heat sinking must be chosen accord­ing to the maximum power dissipation to prevent overheat­ing. See Table II for general recommendations.
PACKAGE TYPE ALLOWABLE POWER DISSIPATION
TO-92 Lowest: Use minimum supply and at +25°C. TO-237 Acceptable: Trade-off supply and temperature. TO-39 Good: Adequate for majority of designs. TO-220 Excellent: For prolonged maximum stress. TO-3 Use if hermetic package is required.
TABLE II. External Transistor Package Type and
Dissipation.
INPUT VOLTAGE RANGE
The internal op amp A1 can be damaged if its non-inverting input (an internal node) is pulled more than 0.5V below common (0V). This could occur if input pins 3, 4 or 5 were driven with an op amp whose output could swing negative under abnormal conditions. The voltage at the input of A1 is:
(V
)16(V
VA1 = + + (3)
REF IN
)4(V
IN1
IN2
)
2
Common
FIGURE 2. Q
V
Using PNP Transistors.
EXT
V
REF
V
REF
V
REF
NOTE: (1) R range, set R
REF
R
20k
Adjust Range
±5% Optimum
gives higher resolution with reduced
S
= 0 for larger range.
S
Force
Sense Adjust
R
S
+V
CC
15 12 11
(1)
XTR110
16
Common
2
FIGURE 3. Optional Adjustment of Reference Voltage.
+10V
REF
Q
REF
Force
Sense
15 12
XTR110
16
2
+V
CC
This voltage should not be allowed to go more negative than –0.5V. If necessary, a clamp diode can be connected from the negative-going input to common to clamp the input voltage.
COMMON (Ground)
Careful attention should be directed toward proper con­nection of the common (grounds). All commons should be joined at one point as close to pin 2 of the XTR110 as possible. The exception is the I
return. It can be
OUT
returned to any point where it will not modulate the common at pin 2.
VOLTAGE REFERENCE
The reference voltage is accurately regulated at pin 12 (V
REF SENSE
6
). To preserve accuracy, any load including pin
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For 100mA with V
40V use 2N3055 for Q
CC
up to
REF
.
FIGURE 4. Increasing Reference Current Drive.
3 should be connected to this point. The circuit in Figure 3 shows adjustment of the voltage reference.
The current drive capability of the XTR110’s internal refer­ence is 10mA. This can be extended if desired by adding an external NPN transistor shown in Figure 4.
OFFSET (ZERO) ADJUSTMENT
The offset current can be adjusted by using the potentiom­eter, R1, shown in Figure 5. Set the input voltage to zero and then adjust R1 to give 4mA at the output. For spans starting
XTR110
SBOS141A
0V
to
+10V
15
12
3
4
5
Offset Adjust
6
R
XTR110
7
1
2
9
8
R
4
R
2
Span Adjust
16
R
3
1µF Tantalum
1
13
G
14
S
D
4mA to
20mA Out
Third Wire
24V
R
L
250
R
20
+
1V to +5V Out
(mA)
O
Output Current, I
–2.5
15
16mA Span
10
5
Zero Adjust ±1.8% Optimum
4mA Offset
0246810
= 100k
1
R
= 100k
2
R
= 49.9k
3
R
= 31.6
4
Input Voltage, V
Span Adjust ±0.45%
as shown
(V)
IN1
FIGURE 6. Zero and Span of 0V to +10V Input, 4mA to
20mA Output Configuration (see Figure 5).
FIGURE 5. Offset and Span Adjustment Circuit for 0V to
+10V Input, 4mA to 20mA Output.
at 0mA, the following special procedure is recommended: set the input to a small nonzero value and then adjust R1 to the proper output current. When the input is zero the output will be zero. Figures 6 and 7 show graphically how offset is adjusted.
SPAN ADJUSTMENT
The span is adjusted at the full-scale output current using the potentiometer, R2, shown in Figure 5. This adjustment is interactive with the offset adjustment, and a few iterations may be necessary. For the circuit shown, set the input voltage to +10V full scale and adjust R2 to give 20mA full­scale output. Figures 6 and 7 show graphically how span is adjusted.
The values of R2, R3, and R4 for adjusting the span are determined as follows: choose R4 in series to slightly de­crease the span; then choose R2 and R3 to increase the span to be adjustable about the center value.
LOW TEMPERATURE COEFFICIENT OPERATION
Although the precision resistors in the XTR110 track within 1ppm/°C, the output current depends upon the absolute temperature coefficient (TC) of any one of the resistors, R6, R7, R8, and R9. Since the absolute TC of the output current can have 20ppm/°C, maximum, the TC of the output current can have 20ppm/°C drift. For low TC operation, zero TC resistors can be substituted for either the span resistors (R or R7) or for the source resistor (R9) but not both.
20
See values in Figure 6.
(mA)
15
O
10
Output Current, I
5
0246810
In addition, connect pins 9 and 10 together.
20mA Span
Zero Adjust
0mA Offset
Input Voltage, V
Span Adjust
(V)
IN1
FIGURE 7. Zero and Span of 0V to +10VIN, 0mA to 20mA
Output Configuration (see Figure 5).
EXTENDED SPAN
For spans beyond 40mA, the internal 50Ω resistor (R9) may be replaced by an external resistor connected between pins 13 and 16.
Its value can be calculated as follows: R
= R9 (Span
EXT
OLD
/Span
NEW
Since the internal thin-film resistors have a 20% absolute value tolerance, measure R9 before determining the final
6
value of R
. Self-heating of R
EXT
can cause nonlinearity.
EXT
Therefore, choose one with a low TC and adequate power rating. See Figure 10 for application.
)
XTR110
SBOS141A
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7
TYPICAL APPLICATIONS
The XTR110 is ideal for a variety of applications requiring high noise immunity current-mode signal transmission. The precision +10V reference can be used to excite bridges and transducers. Selectable ranges make it very useful as a precision programmable current source. The compact design
15
12
11
4
3
5
2
3
Offset Adjust
V
IN
A
4
R
9
15k
R
10
1k
A
3
R
R
2M
5
20k
and low price of the XTR110 allow versatility with a minimum of external components and design engineering expense.
Figures 8 through 10 show typical applications of the XTR110.
+15V
16
+10V
Reference
R
402
1
13
14
7
6
8
10
9
6
R
1
2
T
1
R
7
4.75k
R
200
8
Fine Trim RH 50k
Course Trim
Span Adjust
T
3
R 2k
I
(mA)
200
O
0
–200
FIGURE 8. ±200mA Current Pump.
A
2
A
1
4
T
2
R
4.99
2
I
O
–15V
, R2: Low TC resistors to dissipate 0.32W continuous power.
R
1
R
, R10, R11: 10-turn trimpots for greatest sensitivity.
8
V
(V)
IN
105
For other current ranges, scale both resistors proportionately.
R
, R7: Low TC resistors.
6
A
- A4: 1/4 LM324 (powered by ±15V).
1
T
: International Rectifier IR9513
1
T
: International Rectifier IR513
2
T
: International Rectifier IRFF9113
3
(1)
.
(1)
.
(1)
.
NOTE: (1) Or other adequate power rating MOS transistor.
8
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XTR110
SBOS141A
Isolation Barrier
Isolated Power
Supply (722)
–15V +15V +15V–15V
7
8
0 to –10V
15
16
ISO122
FIGURE 9. Isolated 4mA to 20mA Channel.
+15V
1µF
15
12
3
XTR110
4
5
16
1
13
S
G
14
2
9
+24V
4mA to 20mA Out
D
R
L
V
L
15
12
4
0V to +10V
See extended span section.
XTR110
3
5
2
9
FIGURE 10. 0A to 10A Output Voltage-to-Current Converter.
R
16
13
14
G
EXT
0.1
0A to
S
10A Out
D
XTR110
SBOS141A
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9
PACKAGE DRAWINGS
10
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XTR110
SBOS141A
PACKAGE DRAWINGS (CONT)
XTR110
SBOS141A
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11
PACKAGE OPTION ADDENDUM
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12-Sep-2006
PACKAGING INFORMATION
Orderable Device Status
(1)
Package
Type
Package
Drawing
Pins Package
Qty
Eco Plan
XTR110AD OBSOLETE XCEPT Y 0 TBD Call TI Call TI XTR110AG NRND CDIP SB JD 16 24 Green (RoHS &
no Sb/Br)
XTR110BG NRND CDIP SB JD 16 24 Green (RoHS &
no Sb/Br)
XTR110KP ACTIVE PDIP N 16 25 Green (RoHS &
no Sb/Br)
XTR110KPG4 ACTIVE PDIP N 16 25 Green (RoHS &
no Sb/Br)
XTR110KU ACTIVE SOIC DW 16 48 Green (RoHS &
no Sb/Br)
XTR110KU/1K ACTIVE SOIC DW 16 1000 Green (RoHS &
no Sb/Br)
XTR110KU/1KG4 ACTIVE SOIC DW 16 1000 Green(RoHS &
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(2)
Lead/Ball Finish MSL Peak Temp
Call TI N / A for Pkg Type
Call TI N / A for Pkg Type
CU NIPDAU N / A for Pkg Type
CU NIPDAU N / A for Pkg Type
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
CU NIPDAU Level-3-260C-168 HR
(3)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
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