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XTR110
Technical data
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TEXAS INSTRUMENTS XTR110 Technical data

SBOS141A – JANUARY 1984 – REVISED AUGUST 2003
PRECISION VOLTAGE-TO-CURRENT
CONVERTER/TRANSMITTER
XTR110
FEATURES
● 4mA TO 20mA TRANSMITTER
● SELECTABLE INPUT/OUTPUT RANGES:
0V to +5V, 0V to +10V Inputs 0mA to 20mA, 5mA to 25mA Outputs Other Ranges
● 0.005% MAX NONLINEARITY, 14 BIT
● PRECISION +10V REFERENCE OUTPUT
● WIDE SUPPLY RANGE: 13.5V to 40V
DESCRIPTION
The XTR110 is a precision voltage-to-current converter designed for analog signal transmission. It accepts inputs of 0 to 5V or 0 to 10V and can be connected for outputs of 4 to 20mA, 0 to 20mA, 5 to 25mA and many other commonly used ranges.
A precision on-chip metal film resistor network provides input scaling and current offsetting. An internal 10V voltage reference can be used to drive external circuitry.
The XTR110 is available in 16-pin plastic DIP, ceramic DIP and SOL-16 surface-mount packages. Commercial and in­dustrial temperature range models are available.
APPLICATIONS
● INDUSTRIAL PROCESS CONTROL
● PRESSURE/TEMPERATURE TRANSMITTERS
● CURRENT-MODE BRIDGE EXCITATION
● GROUNDED TRANSDUCER CIRCUITS
● CURRENT SOURCE REFERENCE FOR DATA
ACQUISITION
● PROGRAMMABLE CURRENT SOURCE FOR
TEST EQUIPMENT
● POWER PLANT/ENERGY SYSTEM
MONITORING
+V
V
REF
V
REF
V
REF
V
IN1
V
Common
Force
Sense
Adjust
(10V)
V
REF
(5V)
IN2
15
12
11
4
3
In
R
R
5
2
+10V
Reference
1
R
3
R
5
R
4
A
2
1
R
8
A
R
R
16
1
13
14
7
6
8
10
9
CC
Source Resistor
Source Sense
Gate Drive
Offset (zero) Adjust
Span Adjust
4mA Span
16mA Span
R
9
2
7
6
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Copyright © 1984-2003, Texas Instruments Incorporated
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SPECIFICATIONS
ELECTRICAL
At T
= +25°C and V
A
PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS TRANSMITTER
Transfer Function Input Range: V
Current, I
O
Nonlinearity 16mA/20mA Span Offset Current, I
Initial
vs Temperature vs Supply, V
Span Error I
Initial
vs Temperature
vs Supply, V Output Resistance From Drain of FET (Q Input Resistance V
Dynamic Response
Settling Time To 0.1% of Span 15 * µs
Slew Rate 1.3 * mA/µs
VOLTAGE REFERENCE
Output Voltage +9.95 +10 +10.05 +9.98 * +10.02 V
vs Temperature 35 50 15 30 ppm/°C vs Supply, V vs Output Current Load Regulation 0.0005 0.01 * * %/mA
vs Time 100 * ppm/1k hrs Trim Range –0.100 +0.25 * * V Output Current Specified Performance 10 * mA
POWER SUPPLY
Input Voltage, V Quiescent Current Excluding I
TEMPERATURE RANGE
Specification:AG, BG –40 +85 * * °C
Operating:AG, BG –55 +125 * * °C
KP, KU –25 +85 °C
= +24V and R
CC
= 250Ω**, unless otherwise specified.
L
XTR110AG, KP, KU XTR110BG
(5)
IN1
V
IN2
OS
CC
CC
Specified Performance 0 +10 * * V Specified Performance 0 +5 * * V
Specified Performance
Derated Performance
IO = 4mA
(1) (1) (1)
= 20mA
O
(1) (1) (1)
IN1
V
IN2
V
REF
(1)
(1)
(2)
(1)
)
EXT
420* *mA 040* *mA
(3)
In 19 * kΩ
IO = 10 [(V
0.01 0.025 0.002 0.005 % of Span
0.2 0.4 0.02 0.1 % of Span
0.0003 0.005 * 0.003 % of Span/°C
0.0005 0.005 * * % of Span/V
0.3 0.6 0.05 0.2 % of Span
0.0025 0.005 0.0009 0.003 % of Span/°C
0.003 0.005 * * % of Span/V
10 x 10
27 * kΩ 22 * kΩ
In/16) + (V
REF
9
/4) + (V
IN1
IN2
/2)] /R
SPAN
* Ω
To 0.01% of Span 20 * µs
CC
CC
Line Regulation 0.0002 0.005 * * %/V
+13.5 +40 * * V
O
3 4.5 * * mA
KP, KU 0 +70 °C
* Specifications same as AG/KP grades. ** Specifications apply to the range of RL shown in Typical Performance Curves. NOTES: (1) Including internal reference. (2) Span is the change in output current resulting from a full-scale change in input voltage. (3) Within compliance range limited
by (+V
– 2V) +VDS required for linear operation of the FET. (4) For V
CC
be damaged. See section, “Input Voltage Range”.
ABSOLUTE MAXIMUM RATINGS
Power Supply, +VCC............................................................................ 40V
Input Voltage, V
See text regarding safe negative input voltage range.
, V
, V
IN1
IN2
....................................................... +V
REF IN
Storage Temperature Range: A, B ................................ –55°C to +125°C
K, U ..................................–40°C to +85°C
Lead Temperature
(soldering, 10s) G, P ................................................................... 300°C
(wave soldering, 3s) U ................................................................ 260°C
Output Short-Circuit Duration, Gate Drive and V
Output Current Using Internal 50Ω Resistor ................................... 40mA
Force................................ Continuous to common and +V
REF
2
adjustment circuit see Figure 3. (5) For extended I
REF
ELECTROSTATIC
CC
CC
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This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation proce­dures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
DISCHARGE SENSITIVITY
drive circuit see Figure 4. (5) Unit may
REF
XTR110
SBOS141A
PIN CONFIGURATION
Top View
Source Resistor
Common
V
In
REF
V
(10V)
IN1
V
(5V)
IN2
Zero Adjust Zero Adjust
Span Adjust
1 2 3 4 5 6 7 8
16
+V
15
V
REF
14
Gate Drive
13
Source Sense
12
V
REF
11
V
REF
10
4mA Span
9
16mA Span
CC
Force
Sense Adjust
ORDERING INFORMATION
PRODUCT PACKAGE RANGE
XTR110AG 16-Pin Ceramic DIP –40°C to +85°C XTR110BG 16-Pin Ceramic DIP –40°C to +85°C XTR110KP 16-Pin Plastic DIP 0°C to +70°C XTR110KU SOL-16 Surface-Mount 0°C to +70°C
TEMPERATURE
PACKAGE INFORMATION
PRODUCT PACKAGE NUMBER
PACKAGE DRAWING
XTR110AG 16-Pin Ceramic DIP 109 XTR110BG 16-Pin Ceramic DIP 109 XTR110KP 16-Pin Plastic DIP 180 XTR110KU SOL-16 Surface-Mount 211
NOTE: (1) For detailed drawing and dimension table, please see end of data sheet, or Appendix C of Burr-Brown IC Data Book.
(1)
TYPICAL PERFORMANCE CURVES
TA = +25°C, VCC = 24VDC, RL = 250Ω, unless otherwise noted.
V
LINE REGULATION vs FREQUENCY
10
1
(%/V)
CC
0.1
/∆ V
REF
∆ V
0.01
0.001 1 10 100 1k 10k 100k
100
80
60
40
Above Ambient (°C)
20
Junction Temperature Rise
REF
JUNCTION TEMPERATURE RISE
vs V
Max. TJ = +175°C
= 70°C/W
JA
Ripple Frequency (Hz)
OUTPUT CURRENT
REF
Max. Temp. Rise
for +85°C Ambient
VCC = +40V
V
= +24V
CC
VCC = +15V
I
POWER SUPPLY REGULATION vs FREQUENCY
O
10
1
0.1
(% of span/V)
CC
/∆ V
O
0.01
∆ I
0.001 1 10 100 1k 10k 100k
Ripple Frequency (Hz)
TOTAL OUTPUT ERROR vs TEMPERATURE
2
1
0
Error (% of span)
–1
AG
BG
AG
0
XTR110
SBOS141A
280104
Output Current (mA)
V
REF
(I
has minimal effect on TJ)
OUT
–2
6
–40
–200 20406080
Temperature (°C)
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3
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25°C, VCC = 24VDC, RL = 250Ω, unless otherwise noted.
5
4
)
O
3
2
(mA) (excluding I
CC
I
1
0
–40
–200 20406080
V
IN
0V
0V
Error
I
O
(0.01% of
Span/Box)
I
vs TEMPERATURE
CC
IO = 20mA
IO = 4mA
Temperature (°C)
SETTLING TIME WITH NEG VIN STEP
+V
vs V
L
CC
I
= 20mA
O MAX
I
= 40mA
O MAX
(V)
CC
2500
2000
1500
(Ω)
L
R
1000
500
0
MAXIMUM R
20 3515 4025 30
PULSE RESPONSE
V
IN
0V
I
O
into
500Ω
0V
SETTLING TIME WITH POS VIN STEP
V
IN
0V
0V
Error
I
O
(0.01% of
Span/Box)
4
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XTR110
SBOS141A
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required for 0 to 10V input and 4 to 20mA output. Other input voltage and output current ranges require changes in connections of pins 3, 4, 5, 9 and 10 as shown in the table of Figure 1.
The complete transfer function of the XTR110 is:
(V
)16(V
10 + +
REF IN
IO = (1)
R
is the internal 50Ω resistor, R9, when connected as
SPAN
shown in Figure 1. An external R different output current ranges as described later.
EXTERNAL TRANSISTOR
An external pass transistor, Q Figure 1. This transistor conducts the output signal current. A P-channel MOSFET transistor is recommended. It must have a voltage rating equal or greater than the maximum power supply voltage. Various recommended types are shown in Table I.
)
(V
IN1
4
R
SPAN
can be connected for
SPAN
, is required as shown in
EXT
)
IN2
2
MANUFACTURER PART NO. BV
Ferranti ZVP1304A 40V 20V TO-92
International Rectifier IRF9513 60V 20V TO-220
Motorola MTP8P08 80V 20V TO-220 RCA RFL1P08 80V 20V TO-39
Siliconix VP0300B 30V 40V TO-39 (preferred) VP0300L 30V 40V TO-92
Supertex VP1304N2 40V 20V TO-220
NOTE: (1) BV breakdown voltage.
ZVP1304B 40V 20V TO-39 ZVP1306A 60V 20V TO-92 ZVP1306B 60V 20V TO-39
RFT2P08 80V 20V TO-220
VP0300M 30V 40V TO-237 VP0808B 80V 40V TO-39 VP0808L 80V 40V TO-92 VP0808M 80V 40V TO-237
VP1304N3 40V 20V TO-92 VP1306N2 60V 20V TO-220 VP1306N3 60V 20V TO-92
—Drain-source breakdown voltage. BVGS—Gate-source
DSS
DSS
(1)
BV
GS
(1)
PACKAGE
TABLE I. Available P-Channel MOSFETs.
V
0 to 10V
CC
+
1µF
Short Connection (see text)
Zero Adjust
Span Adjust
4mA Span 16mA Span
+V
13.5 to 40V
I
O
Q
EXT
P-Channel MOSFET (see text)
I
O
4 to 20mA
CC
R
L
(250Ω typ)
+V
Force
15
Sense
12
V
11
REF
Adj.
4
IN
3
5
2
15kΩ
R
R
1
R
2
5
16.25kΩ
5kΩ
INPUT OUTPUT
RANGE (V) RANGE (mA) PIN 3 PIN 4 PIN 5 PIN 9 PIN 10
0-10 0-20 Com Input Com Com Com 2-10 4-20 Com Input Com Com Com 0-10 4-20 +10V Ref Input Com Com Open 0-10 5-25 +10V Ref Input Com Com Com
0-5 0-20 Com Com Input Com Com 1-5 4-20 Com Com Input Com Com 0-5 4-20 +10V Ref Com Input Com Open 0-5 5-25 +10V Ref Com Input Com Com
Reference
R
3
20kΩ
R
4
10kΩ
+10V
IO/10
IO/10
R
8
500Ω
R
R
6
R
6250Ω
7
1562.5Ω
9
50Ω
16
1
13
14
7
6
8
10
9
FIGURE 1. Basic Circuit Connection.
XTR110
SBOS141A
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