TEXAS INSTRUMENTS XTR1064 Technical data

XTR106
BRIDGE NONLINEARITY CORRECTION
USING XTR106
0
Bridge Output (mV)
10
2.0
1.5
1.0
0.5
0
–0.5
Uncorrected Bridge Output
Corrected
5
Nonlinearity (%)
X
TR
1
06
SBOS092A – JUNE 1998 – REVISED NOVEMBER 2003
4-20mA CURRENT TRANSMITTER
with Bridge Excitation and Linearization
XTR106

FEATURES

LOW TOTAL UNADJUSTED ERROR
2.5V, 5V BRIDGE EXCITATION REFERENCE
5.1V REGULATOR OUTPUT
LOW SPAN DRIFT: ±25ppm/°C max
HIGH PSR: 110dB min
HIGH CMR: 86dB min
WIDE SUPPLY RANGE: 7.5V to 36V
14-PIN DIP AND SO-14 SURFACE-MOUNT

DESCRIPTION

The XTR106 is a low cost, monolithic 4-20mA, two­wire current transmitter designed for bridge sensors. It provides complete bridge excitation (2.5V or 5V refer­ence), instrumentation amplifier, sensor linearization, and current output circuitry. Current for powering ad­ditional external input circuitry is available from the V
pin.
REG
The instrumentation amplifier can be used over a wide range of gain, accommodating a variety of input signal types and sensors. Total unadjusted error of the com­plete current transmitter, including the linearized bridge, is low enough to permit use without adjustment in many applications. The XTR106 operates on loop power sup­ply voltages down to 7.5V.
Linearization circuitry provides second-order correction to the transfer function by controlling bridge excitation voltage. It provides up to a 20:1 improvement in nonlinearity, even with low cost transducers.
The XTR106 is available in 14-pin plastic DIP and SO-14 surface-mount packages and is specified for the –40°C to +85°C temperature range. Operation is from –55°C to +125°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

APPLICATIONS

PRESSURE BRIDGE TRANSMITTERS
STRAIN GAGE TRANSMITTERS
TEMPERATURE BRIDGE TRANSMITTERS
INDUSTRIAL PROCESS CONTROL
SCADA REMOTE DATA ACQUISITION
REMOTE TRANSDUCERS
WEIGHING SYSTEMS
ACCELEROMETERS
5V
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V
(5.1V)
REG
2.5V
V
V
REF
REF
5
R
Lin
Polarity
LIN
7.5V to 36V
I
OUT
4-20mA
+
I
G
RET
XTR106
R
Copyright © 1998-2003, Texas Instruments Incorporated
V
PS
V
O
R
L

SPECIFICATIONS

At TA = +25°C, V+ = 24V, and TIP29C external transistor, unless otherwise noted.
XTR106P, U XTR106PA, UA PARAMETER CONDITIONS MIN TYP MAX MIN TYP MAX UNITS OUTPUT
Output Current Equation I Output Current, Specified Range 4 20 ✻✻mA Over-Scale Limit I Under-Scale Limit I
ZERO OUTPUT
(1)
Initial Error ±5 ±25 ±50 µA
vs Temperature T vs Supply Voltage, V+ V+ = 7.5V to 36V 0.04 0.2 ✻✻ µA/V vs Common-Mode Voltage vs V
(IO) 0.8 µA/mA
REG
Noise: 0.1Hz to 10Hz i
(CMRR)
OVER
UNDER
I
ZERO
O
I
= 0, I
REG
I
+ I
REF
= 0 1 1.6 2.2 ✻✻✻ mA
REF
= 2.5mA 2.9 3.4 4 ✻✻✻ mA
REG
VIN = 0V, RG = 4 mA
= –40°C to +85°C ±0.07 ±0.9 ✻✻ µA/°C
A
VCM = 1.1V to 3.5V
n
(5)
SPAN
Span Equation (Transconductance) S Untrimmed Error Full Scale (V vs Temperature Nonlinearity: Ideal Input
INPUT
Offset Voltage V
vs Temperature T vs Supply Voltage, V+ V+ = 7.5V to 36V ±0.1 ±3 ✻✻ µV/V
vs Common-Mode Voltage, RTI CMRR V Common-Mode Range Input Bias Current I
vs Temperature T Input Offset Current I
vs Temperature T Impedance: Differential Z
Noise: 0.1Hz to 10Hz V
VOLTAGE REFERENCES
(2)
(3)
(4)
(5)
Common-Mode 5 || 10 G|| pF
(5)
TA = –40°C to +85°C ±3 ±25 ✻✻ ppm/°C
Full Scale (VIN) = 50mV ±0.001 ±0.01 ✻✻ %
OS
V
CM
OS
IN
= –40°C to +85°C ±0.25 ±1.5 ±3 µV/°C
A
CM
B
= –40°C to +85°C20 pA/°C
A
= –40°C to +85°C5 pA/°C
A
n
Lin Polarity Connected
to V
Initial: 2.5V Reference V
5V Reference V
Accuracy V
vs Temperature T
vs Supply Voltage, V+ V+ = 7.5V to 36V ±5 ±20 ✻✻ ppm/V
vs Load I Noise: 0.1Hz to 10Hz 10 µVp-p
(5)
V
REG
Accuracy ±0.02 ±0.1 ✻✻ V
vs Temperature T
vs Supply Voltage, V+ V+ = 7.5V to 36V 1 mV/V Output Current I Output Impedance I
LINEARIZATION
R
(external) Equation R
LIN
K
Linearization Factor K
LIN
(6)
2.5 2.5 V
REF
55 V
V
REF
REG
REG
LIN
LIN
REF
= –40°C to +85°C ±20 ±35 ±75 ppm/°C
A
REF
= –40°C to +85°C ±0.3 mV/°C
A
REG
Accuracy ±1 ±5 ✻✻ %
vs Temperature T Max Correctable Sensor Nonlinearity B V
= –40°C to +85°C ±50 ±100 ✻✻ ppm/°C
A
) = 50mV ±0.05 ±0.2 ±0.4 %
IN
VCM = 2.5V ±50 ±100 ±250 µV
= 1.1V to 3.5V
, R
REG
(5)
= 0
LIN
= 2.5V or 5V ±0.05 ±0.25 ±0.5 %
= 0mA to 2.5mA 60 ppm/mA
= 0mA to 2.5mA 80
V
= 5V 6.645 k
REF
V
= 2.5V 9.905 k
REF
= 5V ±5 % of V
REF
V
= 2.5V –2.5, +5 % of V
REF
POWER SUPPLY V+ Specified +24 V Voltage Range +7.5 +36 ✻✻V
TEMPERATURE RANGE
Specification –40 +85 ✻✻°C Operating –55 +125 ✻✻°C Storage –55 +125 ✻✻°C Thermal Resistance
14-Pin DIP 80 °C/W
θ
JA
SO-14 Surface Mount 100 °C/W
Specification same as XTR106P, XTR106U. NOTES: (1) Describes accuracy of the 4mA low-scale offset current. Does not include input amplifier effects. Can be trimmed to zero. (2) Does not include initial
error or TCR of gain-setting resistor, R measured with respect to I
pin. (6) See Linearization text for detailed explanation. VFS = full-scale VIN.
RET
. (3) Increasing the full-scale input range improves nonlinearity. (4) Does not include Zero Output initial error. (5) Voltage
G
IO = VIN (40/RG) + 4mA, VIN in Volts, RG in
24 28 30 ✻✻✻ mA
0.02 µA/V
0.035 µAp-p
S = 40/R
G
A/V
±10 ±50 ±100 µV/V
1.1 3.5 ✻✻V 525 50 nA
±0.2 ±3 ±10 nA
0.1 || 1 G|| pF
0.6 µVp-p
5.1 V
See Typical Curves mA
R
= K
LIN
4B
, K
LIN
1 – 2B
in , B is nonlinearity relative to V
LIN
FS
A
FS FS
2
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XTR106
SBOS092A

PIN CONFIGURATION

Top View DIP and SOIC
1
V
REG
2
V
IN
3
R
G
4
R
G
+
5
V
IN
6
I
RET
7
I
O
14 13 12 11 10
9 8
V
5
REF
V
2.5
REF
Lin Polarity R
LIN
V+ B (Base) E (Emitter)

PACKAGE/ORDERING INFORMATION

For the most current package and ordering information, see the Package Option Addendum at the end of this data sheet.

ABSOLUTE MAXIMUM RATINGS

Power Supply, V+ (referenced to IO pin).......................................... 40V
Input Voltage, V
Storage Temperature Range ....................................... –55°C to +125°C
Lead Temperature (soldering, 10s) .............................................. +300°C
Output Current Limit ............................................................... Continuous
Junction Temperature ................................................................... +165°C
NOTE: (1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability.
+
, VIN (referenced to I
IN
(1)
pin) ......................... 0V to V+
RET
ELECTROSTATIC DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instru­ments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degrada­tion to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
XTR106
SBOS092A
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3

FUNCTIONAL DIAGRAM

Lin
Polarity
V
REG
12
R
LIN
11
1
V+
10
14
V
5
REF
REF
13
2.5
5
+
V
IN
V
4
REF
Amp
Bandgap
V
REF
100µA
Lin
Amp
Current
Direction
Switch
5.1V
B 9
R
G
975
3
V
2
V
IN
I = 100µA +
IN
R
G
25
E 8
6
I
RET
4
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7
= 4mA + V
I
O
( )
IN
40
R
G
XTR106
SBOS092A

TYPICAL PERFORMANCE CURVES

At TA = +25°C, V+ = 24V, unless otherwise noted.
60
RG = 50
50
40
30
RG = 1k
C
C
OUT
C
OUT
connected
C
OUT
between V+ and I
20
TRANSCONDUCTANCE vs FREQUENCY
10
Transconductance (20 log mA/V)
= 250
R
L
0
100 1k 10k 100k 1M
Frequency (Hz)
COMMON-MODE REJECTION vs FREQUENCY
110 100
90 80 70
RG = 1k
RG = 50
60 50
Common-Mode Rejection (dB)
40 30
10 1k100 10k 100k 1M
Frequency (Hz)
= 0.01µF
= 0.01µF
OUT
= 0.033µF
STEP RESPONSE
C
= 0.01µF
RG = 1k
O
20mA
OUT
RG = 50
4mA/div
4mA
50µs/div
POWER SUPPLY REJECTION vs FREQUENCY
160 140
RG = 50
C
= 0
OUT
120
= 1k
R
G
100
80 60 40
Power Supply Rejection (dB)
20
0
10 1k100 10k 100k 1M
Frequency (Hz)
90 80 70 60 50 40 30
Percent of Units (%)
20 10
0
XTR106
SBOS092A
INPUT OFFSET VOLTAGE DRIFT
PRODUCTION DISTRIBUTION
Typical production distribution of packaged units.
1.5
1.0
0.5
INPUT OFFSET VOLTAGE CHANGE
and V
vs V
REG
VOS vs I
CURRENTS
REF
REG
0
(µV)
–0.5
OS
V
–1.0
VOS vs I
REF
1.52.02.5
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
2.25
2.5
2.75
3.0
–1.0 –0.5 0 0.5 1.0 1.5 2.0 2.5
Current (mA)
Offset Voltage Drift (µV/°C)
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TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25°C, V+ = 24V, unless otherwise noted.
2.5
UNDER-SCALE CURRENT vs TEMPERATURE
2.0
1.5
1.0
Under-Scale Current (mA)
0.5 V+ = 7.5V to 36V
0
–75 –50 –25 0 25 50 75 100
Temperature (°C)
OVER-SCALE CURRENT vs TEMPERATURE
30
With External Transistor
29
28
V+ = 36V
27
26
Over-Scale Current (mA)
25
V+ = 24V
V+ = 7.5V
24
–75 –50 –25 0 25 50 75 100
Temperature (°C)
125
125
4.0
UNDER-SCALE CURRENT vs I
REF
3.5 T
3.0
= –55°C
A
2.5
2.0
TA = +25°C
1.5
1.0
Under-Scale Current (mA)
TA = +125°C
0.5
0
0 0.5 1.0 1.5 2.0 2.5
+ I
REG
(mA)
I
REF
ZERO OUTPUT ERROR
3.0
vs V
REF
and V
CURRENTS
REG
2.5
2.0
I
ZERO
Error vs I
1.5
1.0
0.5
0
Zero Output Error (µA)
I
ZERO
Error vs I
0.51.0
1 0.5 0 0.5 1.0 1.5 2.0
Current (mA)
+ I
REG
REG
REF
2.5
ZERO OUTPUT CURRENT ERROR
4 2 0
2468
Zero Output Current Error (µA)
1012
75 50 25 0 25 50 75 100
6
vs TEMPERATURE
Temperature (°C)
125
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70
60
50
40
30
20
Percent of Units (%)
10
0
0
0.1
0.05
0.15
ZERO OUTPUT DRIFT
PRODUCTION DISTRIBUTION
Typical production distribution of packaged units.
0.2
0.3
0.4
0.5
0.25
0.35
0.45
0.55
0.6
Zero Output Drift (µA/°C)
0.65
0.7
0.8
0.85
0.9
0.75
XTR106
SBOS092A
TYPICAL PERFORMANCE CURVES (CONT)
10 100 1k 10k 100k 1M
Frequency (Hz)
REFERENCE AC LINE REJECTION vs FREQUENCY
120
100
80
60
40
20
0
Line Rejection (dB)
V
REF
2.5
V
REF
5
At TA = +25°C, V+ = 24V, unless otherwise noted.
INPUT VOLTAGE, INPUT CURRENT, and ZERO
OUTPUT CURRENT NOISE DENSITY vs FREQUENCY
10k
Zero Output Noise
1k
Input Current Noise
100
Input Voltage Noise (nV/Hz)
10
Input Voltage Noise
1 10 100 1k 10k
Frequency (Hz)
V
5.6
OUTPUT VOLTAGE vs V
REG
OUTPUT CURRENT
REG
5.5
5.4
5.3
5.2
5.1
Output Current (V)
REG
5.0
V
4.9
TA = +125°C
TA = +25°C, –55°C
4.8 –1.0 –0.5 0 0.5 1.0 1.5 2.0 2.5
Output Current (mA)
V
REG
100k
10k
1k
100
10
Input Current Noise (fA/Hz)
Zero Output Current Noise (pA/Hz)
INPUT BIAS and OFFSET CURRENT
vs TEMPERATURE
10
8
6
I
B
4
2
I
0
OS
Input Bias and Offset Current (nA)
2
75 50 25 0 25 50 75 100 125
Temperature (°C)
REFERENCE TRANSIENT RESPONSE
= 5V
V
REF
50mV/div
500µA/div
10µs/div
Output
Reference
1mA
0
5 vs V
V
REF
5.008
5.004
5.000
5 (V)
REF
V
4.996
4.992
4.988 –1.0 –0.5 0 0.5 1.0 1.5 2.0 2.5
V
REG
XTR106
SBOS092A
OUTPUT CURRENT
REG
T
= +25°C
A
T
= +125°C
A
T
= –55°C
A
Current (mA)
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