The XTR106 is a low cost, monolithic 4-20mA, twowire current transmitter designed for bridge sensors. It
provides complete bridge excitation (2.5V or 5V reference), instrumentation amplifier, sensor linearization,
and current output circuitry. Current for powering additional external input circuitry is available from the
V
pin.
REG
The instrumentation amplifier can be used over a wide
range of gain, accommodating a variety of input signal
types and sensors. Total unadjusted error of the complete current transmitter, including the linearized bridge,
is low enough to permit use without adjustment in many
applications. The XTR106 operates on loop power supply voltages down to 7.5V.
Linearization circuitry provides second-order correction
to the transfer function by controlling bridge excitation
voltage. It provides up to a 20:1 improvement in
nonlinearity, even with low cost transducers.
The XTR106 is available in 14-pin plastic DIP and
SO-14 surface-mount packages and is specified for the
–40°C to +85°C temperature range. Operation is from
–55°C to +125°C.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
✻ Specification same as XTR106P, XTR106U.
NOTES: (1) Describes accuracy of the 4mA low-scale offset current. Does not include input amplifier effects. Can be trimmed to zero. (2) Does not include initial
error or TCR of gain-setting resistor, R
measured with respect to I
pin. (6) See “Linearization” text for detailed explanation. VFS = full-scale VIN.
RET
. (3) Increasing the full-scale input range improves nonlinearity. (4) Does not include Zero Output initial error. (5) Voltage
G
IO = VIN • (40/RG) + 4mA, VIN in Volts, RG in Ω
242830✻✻✻ mA
0.02✻µA/V
0.035✻µAp-p
S = 40/R
G
✻A/V
±10±50✻±100µV/V
1.13.5✻✻V
525✻50nA
±0.2±3✻±10nA
0.1 || 1✻GΩ || pF
0.6✻µVp-p
5.1✻V
See Typical Curves✻mA
R
= K
LIN
4B
• , K
LIN
1 – 2B
in Ω, B is nonlinearity relative to V
LIN
FS
A
Ω
FS
FS
2
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XTR106
SBOS092A
PIN CONFIGURATION
Top ViewDIP and SOIC
1
V
REG
–
2
V
IN
3
R
G
4
R
G
+
5
V
IN
6
I
RET
7
I
O
14
13
12
11
10
9
8
V
5
REF
V
2.5
REF
Lin Polarity
R
LIN
V+
B (Base)
E (Emitter)
PACKAGE/ORDERING INFORMATION
For the most current package and ordering information, see
the Package Option Addendum at the end of this data sheet.
ABSOLUTE MAXIMUM RATINGS
Power Supply, V+ (referenced to IO pin).......................................... 40V
Input Voltage, V
Storage Temperature Range ....................................... –55°C to +125°C
Lead Temperature (soldering, 10s) .............................................. +300°C
Output Current Limit ............................................................... Continuous
Junction Temperature ................................................................... +165°C
NOTE: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability.
+
–
, VIN (referenced to I
IN
(1)
pin) ......................... 0V to V+
RET
ELECTROSTATIC
DISCHARGE SENSITIVITY
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling
and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits
may be more susceptible to damage because very small
parametric changes could cause the device not to meet its
published specifications.
XTR106
SBOS092A
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3
FUNCTIONAL DIAGRAM
Lin
Polarity
V
REG
12
R
LIN
11
1
V+
10
14
V
5
REF
REF
13
2.5
5
+
V
IN
V
4
REF
Amp
Bandgap
V
REF
100µA
Lin
Amp
Current
Direction
Switch
5.1V
B
9
R
G
975
3
V
2
–
V
IN
I = 100µA +
IN
R
G
25
Ω
Ω
E
8
6
I
RET
4
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7
= 4mA + V
I
O
• ( )
IN
40
R
G
XTR106
SBOS092A
TYPICAL PERFORMANCE CURVES
At TA = +25°C, V+ = 24V, unless otherwise noted.
60
RG = 50Ω
50
40
30
RG = 1kΩ
C
C
OUT
C
OUT
connected
C
OUT
between V+ and I
20
TRANSCONDUCTANCE vs FREQUENCY
10
Transconductance (20 log mA/V)
= 250Ω
R
L
0
1001k10k100k1M
Frequency (Hz)
COMMON-MODE REJECTION vs FREQUENCY
110
100
90
80
70
RG = 1kΩ
RG = 50Ω
60
50
Common-Mode Rejection (dB)
40
30
101k10010k100k1M
Frequency (Hz)
= 0.01µF
= 0.01µF
OUT
= 0.033µF
STEP RESPONSE
C
= 0.01µF
RG = 1kΩ
O
20mA
OUT
RG = 50Ω
4mA/div
4mA
50µs/div
POWER SUPPLY REJECTION vs FREQUENCY
160
140
RG = 50Ω
C
= 0
OUT
120
= 1kΩ
R
G
100
80
60
40
Power Supply Rejection (dB)
20
0
101k10010k100k1M
Frequency (Hz)
90
80
70
60
50
40
30
Percent of Units (%)
20
10
0
XTR106
SBOS092A
INPUT OFFSET VOLTAGE DRIFT
PRODUCTION DISTRIBUTION
Typical production
distribution of
packaged units.
1.5
1.0
0.5
INPUT OFFSET VOLTAGE CHANGE
and V
vs V
REG
VOS vs I
CURRENTS
REF
REG
0
(µV)
–0.5
OS
∆ V
–1.0
VOS vs I
REF
–1.5
–2.0
–2.5
0
0.25
0.5
0.75
1.0
1.25
1.5
1.75
2.0
2.25
2.5
2.75
3.0
–1.0–0.500.51.01.52.02.5
Current (mA)
Offset Voltage Drift (µV/°C)
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5
TYPICAL PERFORMANCE CURVES (CONT)
At TA = +25°C, V+ = 24V, unless otherwise noted.
2.5
UNDER-SCALE CURRENT vs TEMPERATURE
2.0
1.5
1.0
Under-Scale Current (mA)
0.5
V+ = 7.5V to 36V
0
–75–50–250255075100
Temperature (°C)
OVER-SCALE CURRENT vs TEMPERATURE
30
With External Transistor
29
28
V+ = 36V
27
26
Over-Scale Current (mA)
25
V+ = 24V
V+ = 7.5V
24
–75–50–250255075100
Temperature (°C)
125
125
4.0
UNDER-SCALE CURRENT vs I
REF
3.5
T
3.0
= –55°C
A
2.5
2.0
TA = +25°C
1.5
1.0
Under-Scale Current (mA)
TA = +125°C
0.5
0
00.51.01.52.02.5
+ I
REG
(mA)
I
REF
ZERO OUTPUT ERROR
3.0
vs V
REF
and V
CURRENTS
REG
2.5
2.0
I
ZERO
Error vs I
1.5
1.0
0.5
0
Zero Output Error (µA)
I
ZERO
Error vs I
–0.5
–1.0
–1–0.500.51.01.52.0
Current (mA)
+ I
REG
REG
REF
2.5
ZERO OUTPUT CURRENT ERROR
4
2
0
–2
–4
–6
–8
Zero Output Current Error (µA)
–10
–12
–75–50–250255075100
6
vs TEMPERATURE
Temperature (°C)
125
www.ti.com
70
60
50
40
30
20
Percent of Units (%)
10
0
0
0.1
0.05
0.15
ZERO OUTPUT DRIFT
PRODUCTION DISTRIBUTION
Typical production
distribution of
packaged units.
0.2
0.3
0.4
0.5
0.25
0.35
0.45
0.55
0.6
Zero Output Drift (µA/°C)
0.65
0.7
0.8
0.85
0.9
0.75
XTR106
SBOS092A
TYPICAL PERFORMANCE CURVES (CONT)
101001k10k100k1M
Frequency (Hz)
REFERENCE AC LINE REJECTION vs FREQUENCY
120
100
80
60
40
20
0
Line Rejection (dB)
V
REF
2.5
V
REF
5
At TA = +25°C, V+ = 24V, unless otherwise noted.
INPUT VOLTAGE, INPUT CURRENT, and ZERO
OUTPUT CURRENT NOISE DENSITY vs FREQUENCY
10k
Zero Output Noise
1k
Input Current Noise
100
Input Voltage Noise (nV/√Hz)
10
Input Voltage Noise
1101001k10k
Frequency (Hz)
V
5.6
OUTPUT VOLTAGE vs V
REG
OUTPUT CURRENT
REG
5.5
5.4
5.3
5.2
5.1
Output Current (V)
REG
5.0
V
4.9
TA = +125°C
TA = +25°C, –55°C
4.8
–1.0–0.500.51.01.52.02.5
Output Current (mA)
V
REG
100k
10k
1k
100
10
Input Current Noise (fA/√Hz)
Zero Output Current Noise (pA/√Hz)
INPUT BIAS and OFFSET CURRENT
vs TEMPERATURE
10
8
6
I
B
4
2
I
0
OS
Input Bias and Offset Current (nA)
–2
–75–50–250255075100125
Temperature (°C)
REFERENCE TRANSIENT RESPONSE
= 5V
V
REF
50mV/div
500µA/div
10µs/div
Output
Reference
1mA
0
5 vs V
V
REF
5.008
5.004
5.000
5 (V)
REF
V
4.996
4.992
4.988
–1.0–0.500.51.01.52.02.5
V
REG
XTR106
SBOS092A
OUTPUT CURRENT
REG
T
= +25°C
A
T
= +125°C
A
T
= –55°C
A
Current (mA)
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7
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