The UCC28600 is a PWM controller with advanced
energy features to meet stringent world-wide energy
efficiency requirements.
UCC28600integratesbuilt-inadvancedenergy
saving features with high level protection features to
provide cost effective solutions for energy efficient
power supplies. UCC28600 incorporates frequency
fold back and green mode operation to reduce the
operation frequency at light load and no load
operations.
UCC28600 is offered in the 8-pin SOIC (D) package.
Operating junction temperature range is -40°C to
105°C.
TYPICAL APPLICATION
1
2TrueDrive is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
The Design Calculator, (Texas Instruments Literature number SLVC104), located in the Tools and Software
section of the UCC28600 product folder, provides a user-interactive iterative process for selecting recommended
component values for an optimal design.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
VDDSupply voltage rangeIDD< 20 mA32V
I
DD
I
OUT(sink)
I
OUT(source)
V
OVP
I
OVP(source)
V
STATUS
T
J
T
stg
T
LEAD
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages
are with respect to GND. Currents are positive into, negative out of the specified terminal. Consult Packaging Section of the databook
for thermal limitations and considerations of packages.
Supply current20mA
Output sink current (peak)1.2
Output source current (peak)-0.8
Analog inputsFB, CS, SS-0.3 to 6.0
VDD = 0 V to 30 V30V
Power dissipationSOIC-8 package, TA= 25°C650mW
Operating junction temperature range–55 to 150
Storage temperature–65 to 150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds300
VDD = 15 V, 0.1-μF capacitor from VDD to GND, 3.3-nF capacitor from SS to GND charged over 3.5 V, 500-Ω resistor from
OVP to -0.1 V, FB = 4.8 V, STATUS = not connected, 1-nF capacitor from OUT to GND, CS = GND, TA= -40°C to 105°C,
(unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAX UNIT
Overall
I
STARTUP
I
STANDBY
I
DD
Undervoltage Lockout
VDD
(uvlo)
ΔVDD
(uvlo)
PWM (Ramp)
D
MIN
D
MAX
Oscillator (OSC)
f
QR(max)
f
QR(min)
f
SS
dTS/dFBVCO gainTSfor 1.6 V < VFB< 1.8 V-38-30-22μs/V
Maximum QR and DCM frequency117130143
Minimum QR and FFM frequencyVFB= 1.3 V324048kHz
Soft start frequencyVSS= 2.0 V324048
Feedback pullup resistor122028kΩ
FB, no loadQR mode3.304.876.00
Green-mode ON thresholdVFBthreshold0.30.50.7
Green-mode OFF thresholdVFBthreshold1.21.41.6
Green-mode hysteresisVFBthreshold0.70.91.1V
FB threshold burst-ONVFBduring green mode0.30.50.7
FB threshold burst-OFFVFBduring green mode0.50.70.9
Burst HysteresisVFBduring green mode0.130.250.42
STATUS on resistanceV
STATUS leakage/off currentVFB= 0.44 V, V
are not connected in the circuit for maximum and minimum duty cycle tests, current sense tests and power limit tests.
VDD = 15 V, 0.1-μF capacitor from VDD to GND, 3.3-nF capacitor from SS to GND charged over 3.5 V, 500-Ω resistor from
OVP to -0.1 V, FB = 4.8 V, STATUS = not connected, 1-nF capacitor from OUT to GND, CS = GND, TA= -40°C to 105°C,
(unless otherwise noted)
PARAMETERTEST CONDITIONSMINTYPMAX UNIT
Current Sense (CS)
A
CS(FB)
V
CS(os)
Power Limit (PL)
I
PL(cs)
V
PL
Soft Start (SS)
I
SS(chg)
I
SS(dis)
V
SS
Overvoltage Protection (OVP)
I
OVP(line)
V
OVP(on)
V
OVP(load)
Thermal Protection (TSP)
OUT
t
RISE
t
FALL
(2) R
(3) Ensured by design. Not production tested.
SCT
and C
(2)
Gain, FB = ΔVFB/ ΔV
CS
QR mode2.5V/V
Shutdown thresholdVFB= 2.4 V, VSS= 0 V1.131.251.38V
CS to output delay time (power limit)CS = 1.0 V
CS to output delay time (over current
(1) SOIC (D) package is available taped and reeled by adding “R” to the above part numbers. Reeled quantities for UCC28600DR is 2,500
devices per reel.
PACKAGESPART NUMBER
(1)
UCC28600D
DEVICE INFORMATION
TERMINAL FUNCTIONS
TERMINAL
NAMENO.
CS3Iprotection. The CS voltage input originates across a current sense resistor and ground. Power limit is
FB2IConnect the collector of the photo-transistor of the feedback optocoupler directly to this pin; connect the emitter
GND4-
OUT5O
OVP7IDetect line, load and resonant conditions using the primary bias winding of the transformer, adjust sensitivity
SS1Ibe placed as close as possible to the SS pin and GND, keeping trace length to a minimum. All faults discharge
STATUS8Odisable the PFC control circuit (high impedance = green mode). STATUS pin is high during UVLO, (VDD <
VDD6Ipin, as described in the GND pin description. Operating energy is usually delivered from auxiliary winding. To
I/ODESCRIPTION
Current sense input. Also programs power limit, and used to control modulation and activate overcurrent
programmed with an effective series resistance between this pin and the current sense resistor.
Feedback input or control input from the optocoupler to the PWM comparator used to control the peak current
in the power MOSFET. An internal 20-kΩ resistor is between this pin and the internal 5-V regulated voltage.
of the photo-transistor to GND. The voltage of this pin controls the mode of operation in one of the three
modes: quasi resonant (QR), frequency foldback mode (FFM) and green mode (GM).
Ground for internal circuitry. Connect a ceramic 0.1-μF bypass capacitor between VDD and GND, with the
capacitor as close to these two pins as possible.
1-A sink (TrueDrive™ ) and 0.75-A source gate drive output. This output drives the power MOSFET and
switches between GND and the lower of VDD or the 13-V internal output clamp.
Over voltage protection (OVP) input senses line-OVP, load-OVP and the resonant trough for QR turn-on.
with resistors connected to this pin.
Soft-start programming pin. Program the soft-start rate with a capacitor to ground; the rate is determined by the
capacitance and the internal soft-start charge current. Placement of the soft-start capacitor is critical and should
the SS pin to GND through an internal MOSFET with an R
comparator reacts to the lowest of the SS voltage, the internal FB voltage and the peak current limit.
ACTIVE HIGH open drain signal that indicates the device has entered standby mode. This pin can be used to
startup threshold), and softstart, (SS < FB).
Provides power to the device. Use a ceramic 0.1-μF by-pass capacitor for high-frequency filtering of the VDD
prevent hiccup operation during start-up, a larger energy storage cap is also needed between VDD and GND.
•IP1is the peak primary current at low line, full load
•IP2is the peak primary current at high line, full load
•I
CS1
•I
CS2
•VPLis the Power Limit (PL) threshold
•V
CS(os)
(1) (2) (3)
is the power limit current that is sourced at the CS pin at low-line voltage
is the power limit current that is sourced at the CS pin at high-line voltage
is the CS offset voltage
(2)
SLUS646J –NOVEMBER 2005– REVISED JULY 2011
(1)
(3)
(3)
(3)
(3)
(2)
OVP7I
(1) Refer to Figure 1 for all reference designators in the Terminal Components Table.
(2) Refer to the Electrical Characteristics Table for constant parameters.
(3) Refer to the UCC28600 Design Calculator (TI Literature Number SLVC104) or laboratory measurements for currents, voltages and times
is the maximum allowable voltage across the base emitter junction that will not turn QSTon
BE(off)
DS(on)
is the base-emitter voltage of transistor QSTin saturation
is the startup threshold
is the maximum leakage/off current of the STATUS pin
is the R
DS(on)
of STATUS
(5)
ST
(5)
(5)
C
VDD
+
ƪ
ǒ
IDD) C
ISSVOUT(hi)fQR(max)
Ǔ
T
BURST
DV
DD(burst)
ƫ
C
VDD
+
ƪ
ǒ
IDD) C
ISSVOUT(hi)fQR(max)
Ǔ
t
SS
DVDD
(uvlo)
ƫ
R
VDD
+
ǒ
p
4
Ǔ
ǒ
N
B
NP
Ǔ
ȧ
ȡ
Ȣ
ǒ
V
DS1(os)fQR(max)LLEAKAGE
ǒ
CD) C
SNUB
Ǔ
Ǹ
IDD) C
ISSVOUT(hi)fQR(max)
ȧ
ȣ
Ȥ
R
SU
+
V
BULK(min)
I
STARTUP
UCC28600
www.ti.com
TERMINAL COMPONENTS (continued)
TERMINAL
NAMENO.
VDD6I
(6) Refer to the Electrical Characteristics Table for constant parameters.
(7) Refer to the UCC28600 Design Calculator (TI Literature Number SLVC104) or laboratory measurements for currents, voltages and times
in the operational circuit.
I/ODESCRIPTION
C
is the greater of:
VDD
or
where:
•IDDis the operating current of the UCC28600
•C
ISS
•V
OUT(hi)
•f
QR(max)
•T
BURST
•ΔVDD
•ΔVDD
•V
DS1(os)
•L
LEAKAGE
•CDis the total drain node capacitance of MOSFET M
•I
STARTUP
•C
SNUB
•tSSis the soft start charge time
(1) (2) (3)
(6)
is the input capacitance of MOSFET M
is VOH of the OUT pin, either 13 V (typ) V
is fSat high line, maximum load