•Auto-Powerdown Plus Option Features
Flexible Power-Saving Mode
•Operates From a Single 2.25-V to 3-V V
Supply
•Designed to be Interchangeable With Industry
Standard '3318 Devices
APPLICATIONS
•Battery-Powered Systems
•PDAs
•Cellular Phones
•Notebooks
•Hand-Held Equipment
•Pagers
CC
SLLS805B –APRIL 2007–REVISED OCTOBER 2013
DESCRIPTION
The TRS3318E is a dual-driver, dual-receiver, RS232-compatible transceiver. The device features
auto-powerdown plus and enhanced electrostatic
discharge (ESD) protection integrated into the chip.
Driver output and receiver input are protected to ±15
kV using the IEC 61000-4-2 Air-Gap Discharge
method, ±8 kV using the IEC 61000-4-2 Contact
Discharge method, and ±15 kV using the HumanBody Model (HBM).
The device operates at a data rate of 460 kbps. The
transceiver has a proprietary low-dropout driver
output stage, enabling RS-232-compatible operation
from a 2.25-V to 3-V supply with a dual charge pump.
Thechargepumprequiresonlyfour0.1-µF
capacitors and features a logic-level output (READY)
that asserts when the charge pump is regulating and
the device is ready to begin transmitting.
The TRS3318E achieves a 1-µA supply current using
theauto-powerdownfeature.Thisdevice
automatically enters a low-power power-down mode
when the RS-232 cable is disconnected or the drivers
of the connected peripherals are inactive for more
than 30 s. The device turns on again when it senses
a valid transition at any driver or receiver input. Autopowerdown saves power without changes to the
existing BIOS or operating system.
Thisdeviceisavailableintwospace-saving
packages: 20-pin SSOP and 20-pin TSSOP.
1
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
www.ti.com
DETAILED DESCRIPTION
Flexible control options for power management are featured when the serial port and driver inputs are inactive.
The auto-powerdown plus feature functions when FORCEON is low and FORCEOFF is high. During this mode of
operation, if the device does not sense valid signal transitions on all receiver and driver inputs for approximately
30 s, the built-in charge pump and drivers are powered down, reducing the supply current to 1 µA. By
disconnecting the serial port or placing the peripheral drivers off, auto-powerdown plus can be disabled when
FORCEON and FORCEOFF are high. With auto-powerdown plus enabled, the device activates automatically
when a valid signal is applied to any receiver or driver input. INVALID is high (valid data) if any receiver input
voltage is greater than 2.7 V or less than –2.7 V, or has been between –0.3 V and 0.3 V for less than 30 µs
(typical number). INVALID is low (invalid data) if all receiver input voltage are between –0.3 V and 0.3 V for more
than 30 µs (typical number).
FUNCTION TABLE
INPUT CONDITIONSOUTPUT STATES
RECEIVER
FORCEONFORCEOFFLEVELDRIVERRECEIVERINVALIDREADY
HHNoNoActiveActiveLHauto-powerdown
HHNoYesActiveActiveHHauto-powerdown
LHYesNoActiveActiveLHauto-powerdown
LHYesYesActiveActiveHHauto-powerdown
LHNoNoZActiveLLauto-powerdown
LHNoYesZActiveHLauto-powerdown
XLXNoZActiveLL
XLXYesZActiveHL
INVALIDINVALIDXNoZActiveLLauto-powerdown
INVALIDINVALIDXYesActiveActiveHHauto-powerdown
(1) H = high level, L = low level, X = irrelevant, Z = high impedance
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating
conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
–0.37V
–70.3V
13V
Recommended Operating Conditions
See Figure 4
MIN NOMMAX UNIT
Supply voltage2.252.53V
VIHDriver and control high-level input voltageVCC= 2.5 V to 3 V0.7 × V
VILDriver and control low-level input voltageVCC= 2.5 V to 3 V00.3 × V
VIReceiver input voltage–2525V
over recommended ranges of supply voltage and operating free-air temperature,
VCC= 2.25 V to 3 V, C1–C4 = 0.1 µF, TA= T
PARAMETERTEST CONDITIONSMINTYP
DC Characteristics (VCC= 2.5 V, TA= 25°C)
Auto-powerdown plus supply current FORCEON = GND, FORCEOFF = VCC, All RIN and DIN idle110µA
Auto-powerdown supply currentFORCEOFF = GND110µA
Supply currentFORCEON = FORCEOFF = VCC, No load0.32mA
over recommended ranges of supply voltage and operating free-air temperature,
VCC= 2.25 V to 3 V, C1–C4 = 0.1 µF, TA= T
PARAMETERTEST CONDITIONSMIN TYP
Driver input hysteresis0.3V
Input leakage currentFORCEON, DIN, FORCEOFF±0.01±1µA
Output voltage swingAll driver outputs loaded with 3 kΩ to ground±3.7±4V
Output resistanceVCC= 0, Driver output = ±2 V30010MΩ
Output short-circuit current
Output leakage currentVCC= 0 or 2.25 V to 3 V, V
(1) Typical values are at VCC= 2.5 V, TA= 25°C.
(2) Short-circuit durations should be controlled to prevent exceeding the device absolute power dissipation ratings, and not more than one
output should be shorted at a time.
(2)
MIN
to T
(unless otherwise noted) (see Figure 4)
MAX
= ±12 V, Drivers disabled±25µA
OUT
(1)
MAXUNIT
±25±60mA
Switching Characteristics
over recommended ranges of supply voltage and operating free-air temperature,
VCC= 2.25 V to 3 V, C1–C4 = 0.1 µF, TA= T
PARAMETERTEST CONDITIONSMINTYP
Maximum data rateRL= 3 kΩ, CL= 1000 pF, One transmitter switching460kbps
|t
– t
PHL
| Driver skew
PLH
Transition-region slew rateMeasured from 3 V to –3 V or –3 V to 3 V,430 V/µs
(2)
MIN
to T
(unless otherwise noted) (see Figure 1)
MAX
VCC= 2.5 V, TA= 25°C, RL= 3 kΩ to 7 kΩ,
CL= 150 pF to 2500 pF
(1)
MAX UNIT
100ns
(1) Typical values are at VCC= 2.5 V, TA= 25°C.
(2) Pulse skew is defined as |t
over recommended ranges of supply voltage and operating free-air temperature,
VCC= 2.25 V to 3 V, C1–C4 = 0.1 µF, TA= T
PARAMETERTEST CONDITIONSMIN TYP
Input voltage range–2525V
Input threshold lowTA= 25°C0.3 × V
Input threshold highTA= 25°C0.7 × V
Input hysteresis0.3V
Input resistanceTA= 25°C357kΩ
Output leakage current±0.05±10µA
Output voltage lowI
Output voltage highI
(1) Typical values are at VCC= 2.5 V, TA= 25°C.
= 0.5 mA0.1 × V
OUT
= –0.5 mA0.9 × V
OUT
MIN
to T
(unless otherwise noted) (see Figure 4)
MAX
CC
CC
(1)
MAXUNIT
CC
CC
Switching Characteristics
over recommended ranges of supply voltage and operating free-air temperature,
VCC= 2.25 V to 3 V, C1–C4 = 0.1 µF (unless otherwise noted) (see Figure 4)
(1)
0.175
0.175
50ns
t
t
|t
PHL
PLH
PHL
Receiver propagation delayRIN to ROUT, CL= 150 pFµs
– t
|Receiver skew
PLH
PARAMETERTEST CONDITIONSTYP
(2)
V
V
V
V
UNIT
(1) Typical values are at VCC= 2.5 V, TA= 25°C.
(2) Pulse skew is defined as |t