Page 1
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Wide Operating Frequency Range up to
1000 MHz
D
High Output Power:
– Typical Value of 32 dBm at 4.8 V and 900
MHz
– Typical Value of 29 dBm at 3.6 V and
900 MHz
D
High Gain:
– Typical Value of 9 dB at 4.8 V and
900 MHz at 32-dBm Output Power
D
High Power-Added Efficiency (PAE):
– Typical Value of 50% at 32-dBm Output
Power
D
Low Cost
D
Extremely Rugged:
– Sustains 20:1 Load Mismatch
D
Suitable for Various Wireless Applications
D
Low Leakage Current <1 mA
D
SOT-89 Plastic Power Package
D
1000 V Human Body Model ESD Protection
on Gate and Drain
description
The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET)
manufactured using the Texas Instruments RFMOS process. It is housed in a SOT-89 (PK) plastic power
package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global
systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost
device, operates from a single-polarity positive power supply and has low leakage current. Typical power output
at 900 MHz is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE).
Copyright 1998, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
GSD
PK PACKAGE
(TOP VIEW)
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
RFMOS is a trademark of Texas Instruments Incorporated.
Page 2
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
†
Drain-source voltage, V
DS
15 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate-source voltage, V
GS
7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous drain current, I
D
2 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction temperature, T
J max
150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal resistance, junction to case, R
θJC
(See Note 1) 10°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total device power dissipation at T
C
= 25°C 12.5 W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25°C 100 mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range,T
A
–40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, T
stg
–65°C to 100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
ESD protection, gate and drain, human body model 1000 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under ”recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: With infinite heatsink and no air flow
electrical characteristics over operating free-air temperature range (unless otherwise noted)
dc characteristics
LIMITS
PARAMETER
TEST CONDITIONS
‡
MIN TYP MAX
UNITS
I
D
Saturated drain current VDS = 4.8 V, VGS = 1.7 V 0.7 A
g
m
Transconductance VDS = 4.8 V, VGS = 1.7 V 1000 mS
V
(TO)
Threshold voltage VDS = 100mV , IDS = 1.5 mA 1.0 V
V(BR)sdSource-drain breakdown voltage
Ids = 40 µA,
Source is grounded
VGS = 0 V
16 V
Leakage current VDS = 4.8 V VGS = 0 V <1 µA
‡
TA = 25°C
RF characteristics, VDS = 4.8 V, VGS = 1.7 V
LIMITS
PARAMETER
TEST CONDITIONS
§
MIN TYP MAX
UNITS
Output power Frequency = 900 MHz, PI = 23 dBm 31 32 dBm
Power gain Frequency = 900 MHz, PI = 23 dBm 9 dB
η
add
Power added efficiency Frequency = 900 MHz, PI = 23 dBm 45% 50%
Ruggedness test
Frequency = 900 MHz,
Load VSWR = 20:1,
PI = 23 dBm,
All phase angles
¶
§
TA = 25°C, fixed matching circuit
¶
No degradation in output power after test.
Page 3
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 1
TA = –40°C
TA = 25°C
TA = 85°C
4.8 V GSM Application Circuit
VDS = 4.8 V
VGS = 1.7 V
Frequency = 900 MHz
20
15
10
0 5 10 15
– Output Power – dBm
25
30
OUTPUT POWER
vs
INPUT POWER
35
20 25
P
O
PI – Input Power – dBm
Figure 2
4.8 V GSM Application Circuit
VDS = 4.8 V
VGS = 1.7 V
PI = 23 dBm
TA = –40°C
TA = 25°C
TA = 85°C
30
28
850 870 890 910
32
f – Frequency – MHz
OUTPUT POWER
vs
FREQUENCY
34
930 950
– Output Power – dBm
P
O
Figure 3
TA = –40°C
TA = 25°C
TA = 85°C
4.8 V GSM Application Circuit
VGS = 1.7 V
PI = 23 dBm
Frequency = 900 MHz
31
29
27
26
3 3.5 4 4.5
32
34
OUTPUT POWER
vs
DRAIN VOLTAGE
35
5 5.5 6
– Output Power – dBm
P
O
33
30
28
VDD – Drain Voltage – V
TA = –40°C
TA = 25°C
TA = 85°C
4.8 V GSM Application Circuit
VDD = 4.8 V
PI = 23 dBm
Frequency = 900 MHz
31
30
29
1 1.2 1.4 1.6
32
OUTPUT POWER
vs
GATE VOLTAGE
(MAX POWER ADDED EFFICIENCY TUNING)
33
1.8 2
– Output Power – dBm
P
O
VGS – Gate Voltage – V
Figure 4
Page 4
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 5
TA = –40°C
TA = 25°C
TA = 85°C
4.8 V GSM Application Circuit
VDS = 4.8 V
VGS = 1.7 V
Frequency = 900 MHz
30
20
10
0
0 5 10 15
PAE – Power Added Efficiency – %
40
50
POWER ADDED EFFICIENCY
vs
INPUT POWER
60
20 25
PI – Input Power – dBm
Figure 6
40
35
30
850 870 890 910
PAE – Power Added Efficiency – %
45
50
f – Frequency – MHz
POWER ADDED EFFICIENCY
vs
FREQUENCY
55
930 950
TA = –40°C
TA = 25°C
4.8 V GSM Application Circuit
VDS = 4.8 V
VGS = 1.7 V
PI = 23 dBm
TA = 85°C
Figure 7
40
35
30
3 3.5 4 4.5
PAE – Power Added Efficiency – %
45
50
POWER ADDED EFFICIENCY
vs
DRAIN VOLTAGE
55
5 5.5 6
VDD – Drain Voltage – V
TA = –40°C
TA = 25°C
TA = 85°C
4.8 V GSM Application Circuit
VGS = 1.7 V
PI = 23 dBm
Frequency = 900 MHz
Figure 8
PI – Input Power – dBm
10
9
8
6
0 5 10 15
GP – Power Gain – dB
12
13
POWER GAIN
vs
INPUT POWER
14
20 25
11
7
TA = –40°C
TA = 25°C
TA = 85°C
4.8 V GSM Application Circuit
VDS = 4.8 V
VGS = 1.7 V
Frequency = 900 MHz
Page 5
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
13
11
7
5
100 300 500 700 900
17
19
21
1100 1300 1500
f – Frequency – MHz
– Maximum Available Gain – dBG
MAX
VDS = 4.8 V
VGS = 1.7 V
TA = 25°C
MAXIMUM AVAILABLE GAIN
vs
FREQUENCY
15
9
23
25
Figure 9
Table 1 lists the small signal scattering parameters of the TRF7003.
T able 1. Small Signal Scattering Parameters, V
DS
= 4.8 V, VGS = 1.7 V
FREQ MHz
S11
(MAG)
S11
(ANG)
S21
(MAG)
S21
(ANG)
S12
(MAG)
S12
(ANG)
S22
(MAG)
S22
(ANG)
100 0.87 –150.14 9.30 96.71 0.03 8.65 0.77 –166.79
200 0.87 –165.55 4.68 82.07 0.03 –4.19 0.79 –173.48
300 0.87 –171.34 3.06 71.95 0.03 –12.23 0.80 –175.44
400 0.88 –174.68 2.24 63.69 0.03 –18.69 0.82 –177.12
500 0.88 –177.12 1.74 56.64 0.03 –23.87 0.83 –178.14
600 0.89 179.25 1.40 49.46 0.02 –28.83 0.84 –179.71
700 0.89 178.67 1.15 43.07 0.02 –32.53 0.85 179.05
800 0.90 176.99 0.97 37.34 0.02 –36.07 0.86 177.34
900 0.91 175.01 0.83 32.10 0.02 –38.84 0.86 175.88
1000 0.91 173.15 0.71 26.71 0.02 –40.84 0.88 174.07
1100 0.91 171.29 0.62 21.52 0.02 –43.07 0.88 172
1200 0.91 169.46 0.55 16.99 0.02 –44.22 0.88 170.33
1300 0.91 167.47 0.48 12.40 0.01 –45.28 0.88 168.38
1400 0.91 165.25 0.43 7.64 0.01 –45 0.88 165.99
1500 0.90 163.33 0.39 3.76 0.01 –45 0.88 164.11
Page 6
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
6
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
V
GS
w = 22 mils
l = 70 mils
RF out
w = 22 mils
l = 430 mils
C3 C4
C5
C6
R1
L1
TRF7003
C8
C7
RF in
w = 22 mils
l = 50 mils
C1
C2
V
DS
Board Material Specifications:
Type FR4 ;
ε
r
= 4.3 ; h = 12 mils
50 Ω line
w = 22 mils
l = 950 mils
50 Ω line
w = 22 mils
l = λ/4
Figure 10. Recommended Application Circuit for 4.8-V GSM
Table 2 lists the TRF7003 components for the recommended 4.8-V GSM application circuit.
Table 2. Component List
DESIGNATORS DESCRIPTION VALUE MANUFACTURER
†
MANUFACTURER P/N
C1 Capacitor 22 pF ATC ATC100A220JP150X
C2 Capacitor 18 pF ATC ATC100A180JP150X
C3 Capacitor 16 pF ATC ATC100A160JP150X
C4 Capacitor 2.7 pF ATC ATC100A2R7CP150X
C5 Capacitor 100 pF ATC ATC100A101JP150X
C6 Capacitor 1 µF MURATA GRM220Y5V105Z010
C7 Capacitor 100 pF ATC ATC100A101JP150X
C8 Capacitor 1 µF MURATA GRM220Y5V105Z010
R1 Resistor 30 Ω International Manufacturing Services RCI–0402–30ROJ
L1 Inductor 15 nH TOKO LL2012–F15NK
†
Or equivalent device
ATC is a trademark of American Technical Ceramics Corporation
Page 7
TRF7003
MOSFET POWER AMPLIFIER
SLWS058C – APRIL 1997 – REVISED JULY 1998
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MECHANICAL DATA
PK (R-PSSO-F3) PLASTIC SINGLE-IN-LINE PACKAGE
4040234/B 03/95
1,50 TYP
0,48 MAX
0,53 MAX
0,40 TYP
2,60
2,40
4,60
4,40
0,44 MAX
4,25 MAX
0,80 MIN
1,80 MAX
1,60
1,40
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. The center lead is in electrical contact with the tab.
Page 8
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pertaining to warranty, patent infringement, and limitation of liability.
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accordance with TI’s standard warranty. T esting and other quality control techniques are utilized to the extent
TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except those mandated by government requirements.
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BE FULLY AT THE CUSTOMER’S RISK.
In order to minimize risks associated with the customer’s applications, adequate design and operating
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TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent
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Copyright 1999, Texas Instruments Incorporated
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