Texas Instruments TRF7610PWP Datasheet

TRF7610

SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B – MAY 1997 – REVISED AUGUST 1998

D

Single Positive Power Supply (No Negative
Voltage Required)

D

Advanced Silicon RFMOS Technology

D

4.8-V Operation for GSM Applications

D

35-dBm Typical Output Power

D

30-dB Typical Power Gain

D

40% Typical PAE with 5-dBm Input Power

D

45% Typical PAE with 8-dBm Input Power

D

Output Power Control

D

Few External Components Required for
Operation

D

Thermally Enhanced Surface-Mount

VG2
VG3
VPC
VG1

NC
RFIN
RFIN

NC

VG1
VPC
VG3
VG2

PWP PACKAGE

(TOP VIEW)

1
2
3
4
5
6
7
8
9
10
11
12

24
23
22
21
20
19
18
17
16
15
14
13

VD1/VD2
GND
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
RFOUT/VD3
GND
VD1/VD2

Package for Small Circuit Footprint

D

Rugged, Sustains 20:1 Load Mismatch

D

800-MHz to 1000-MHz Wide Operational

NC – No internal connection

Frequency Range

D

Low Standby Current (<10 µA)

description

The TRF7610 is a silicon MOSFET power amplifier IC for 900-MHz applications, tailored specifically for global
systems for mobile communications (GSM). It uses Texas Instruments RFMOS process and consists of a
three-stage amplifier with output power control. Few external components are required for operation.

The TRF7610 amplifies the RF signal from a preceding modulator and the upconverter stages in an RF section
of a transmitter to a level that is sufficient for connection to the antenna. The RF input port, RFIN, and the RF
output port, RFOUT, require simple external matching networks.

A control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious
emission specifications for time-division multiple-access (TDMA) systems. The power control signal causes a
change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power
applied to RFIN at 5 dBm, adjusting VPC from 0 V to 3 V increases the output power from a typical value of
–43 dBm at VPC = 0 V to a typical value of 35 dBm at VPC = 3 V. Forward isolation with the RF input power
applied to RFIN at 5 dBm, VPC = 0 V, is typically 48 dB.

The TRF7610 is available in a thermally enhanced, surface-mount, 24-pin PowerPAD (PWP) thin-shrink
small-outline package (TSSOP). It is characterized for operation from –40°C to 85°C operating free-air
temperature. In order to maintain acceptable thermal operating conditions, the device should be operated in
pulse applications such as the GSM standard 1/8 duty cycle. The package has a solderable pad that improves
the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a
low-inductance electrical path to ground and must be electrically connected to the printed circuit-board (PCB)
ground plane as a continuation of the regular package terminals that are designated GND.

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

RFMOS and PowerPAD are trademarks of Texas Instruments Incorporated.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

Copyright  1998, Texas Instruments Incorporated

1

TRF7610

I/O

DESCRIPTION

SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B – MAY 1997 – REVISED AUGUST 1998

schematic

RFIN

VPC

13, 24

6, 7

3 or 10

4 or 9

VG1

1, 12

VG2

15 – 22

2 or 11

RFOUT/VD3

VG3

VD1/VD2

Terminal Functions

TERMINAL

NAME NO.

GND 14, 23 Analog ground for all internal circuits. All signals are referenced to the ground terminals.
NC 5, 8 No internal connection. It is recommended that all NC terminals be connected to ground.
RFIN 6, 7 I RF input. RFIN accepts signals between 800 MHz and 1000 MHz.
RFOUT/VD3 15, 16, 17,

18, 19, 20,

21, 22

VG1 4, 9 I First-stage gate bias set by resistor. Either terminal may be used or both may be connected externally.
VG2 1, 12 I Second-stage gate bias set by resistor. These terminals must be connected externally.
VG3 2, 11 I Third-stage gate bias set by resistor. Either terminal may be used or both may be connected externally.
VPC 3, 10 I Voltage power control. VPC is a signal between 0 V and 3 V that adjusts the output power from a typical

VD1/VD2 13, 24 I First- and second-stage drain bias. These terminals must be connected externally.

I/O RF output and third-stage drain bias. RFOUT requires an external matching network.

value of –43 dBm to 35 dBm. Either terminal may be used, or both may be connected externally.

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage range, V

Input voltage range, VPC –0.6 V to 4 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input power at RFIN 13 dBm. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Thermal resistance, junction to case, R
Junction temperature, T
Operating free-air temperature range, T
Storage temperature range, T

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES: 1. Voltage values are with respect to GND.

2

2. No air flow and with infinite heatsink

(see Note 1) –0.6 V to 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DD

(see Note 2) 3.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

max 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

θJC

A

stg

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

–40°C to 85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

I

pply current

Output power

dBm

Power added efficiency (PAE)

Harmonics

dBc

Noise power in 30-kHz bandwidth

dBm

TRF7610

SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B – MAY 1997 – REVISED AUGUST 1998

recommended operating conditions

PARAMETER MIN NOM MAX UNIT

Supply voltage VDD (see Note 1 and Note 3) 3.5 4.8 6 V
Operating free-air temperature, T
Operating frequency range (see Note 4) 800 1000 MHz

NOTES: 1. Voltage values are with respect to GND.

3 .Performance varies with drain voltage, see Figure 8.

4. External matching network dependent.

A

electrical characteristics over full range of recommended operating conditions

supply current, VDD = 4.8 V

PARAMETER TEST CONDITIONS MIN TYP†MAX UNIT

pp

Su

DD

†

Typical values are at TA = 25°C

Operating at maximum output power VPC = 3 V 2 A
Operating with no RF input power VPC = 0 V <10 µA

–40 85 °C

GSM operation, VDD = 4.8 V, VPC = 3 V, PI = 5 dBm, T

PARAMETER

Operating frequency range 870 925 MHz

p

p

Input return loss (externally matched, small signal) PI = –20 dBm 10 dB

2f

0

3f

0

p

Ruggedness test

‡

Specific applications circuit

§

No degradation in output power after test.

20 MHz above f
10 MHz above f

0
0

= 25°C (unless otherwise noted)

A

TEST CONDITIONS MIN TYP MAX UNIT

VPC = 3 V 34 35 36
VPC = 0 V –43

PI = 8 dBm 45%

With external matching –28
With external matching –40

Frequency = 900 MHz,
Load VSWR = 20:1,
All phase angles

‡

40%

–88
–88

§

stability, GSM operation

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

No parasitic

oscillations (all

spurious < –70 dBc)

Stability

¶

VSWR = voltage standing wave ratio

Output VSWR¶ < 6:1 all phases, VDD < 6 V, PI = 5 dBm,
PO ≤ 35 dBm, Output frequency band: 200 MHz – 1200 MHz

switching characteristics

GSM operation

t

Switching time, RF output OFF to ON VPC stepped from 0 V to 3 V 2 µs

on

t

Switching time, RF output ON to OFF VPC stepped from 3 V to 0 V 2 µs

off

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

3

TRF7610
SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B – MAY 1997 – REVISED AUGUST 1998

APPLICATION INFORMATION

In all cases, a capacitor must be connected from the positive power supply to ground as close to the terminals as
possible for power-supply bypassing. The dc-blocking capacitors are required on the RF input and RF output. A list
of components and their functions is shown in Table 1.

TRF7610

RFIN

C2

C1

L1

R4

R1

R2

GND

24

23

22

21

20

19

18

17

16

C4

C5

C6

+

50 Ω

245 mil

C8

VD1/VD2

C11

L2

VD3

C9

C10

+

C3

RFOUT

1

VG2

2

VG3

3

VPC

4

VG1

5

NC

6

RFIN

7

RFIN

8

NC

9

VG1

VD1/VD2

RFOUT/VD3

RFOUT/VD3

RFOUT/VD3

RFOUT/VD3

RFOUT/VD3

RFOUT/VD3

RFOUT/VD3

GND

15

14

13

C7

VPC

C12

R5

R3

10

11

12

VPC

VG3

VG2

RFOUT/VD3

VD1/VD2

Figure 1. Typical GSM Cellular Telephone Application

4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265