Ideal for Global Systems for Mobile
Communications (GSM) Applications
description
The Texas Instruments (TI) TRF2020 is an
V
DD
CLOCK
DATA
STROBE
LD
V
SS
REF_IN
V
SSP
PDA2
SW2
V
DDP2
AUX2_IN
PW PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
integrated high performance frequency synthesizer device. The TRF2020 consists of one main
1.2-GHz synthesizer and two auxiliary 250-MHz
synthesizers. Each synthesizer has an independent dual-modulus prescaler and separate powerdown modes.
These features provide maximum flexibility for the design of 900-MHz wireless systems.
The main synthesizer consists of a 32/33-modulus prescaler with an 1 1-bit counter, a phase-frequency detector ,
and a charge pump. The phase-frequency detector is referenced to an internal reference frequency that is
derived from an external TCXO signal. The phase-frequency detector is also provided with a dead-zone
compensation circuit that reduces synthesizer phase noise during locked conditions.
Each auxiliary synthesizer consists of an independent 8/9-modulus prescaler with an 11-bit counter, a
phase-frequency detector, and a charge pump. Similar to the main synthesizer, each auxiliary synthesizer’s
phase-frequency detector is referenced to an internal reference frequency that is derived from an external
TCXO signal.
AUX1_IN
V
DDP1
PDA1
SW1
RPA
V
DDA
SWM
PDM
V
SSA
RPM
V
DDPM
RF_IN
The external TCXO signal is prescaled by an 11-bit counter and then distributed to three independent
postscalers. Each postscaler provides a selectable, divide-by-1, -2, -4, or -8 function before the reference signal
is distributed to the associated synthesizer phase detector. The reference frequency prescaler and independent
postscalers are software programmable.
To achieve minimum lock-up time, each synthesizer contains a speed-up mode charge pump capable of
providing 2 mA output current and an analog switch that can change the loop-filter time constant. The duration
of the speed-up mode operations can be independently controlled with software.
The states of the three internal lock detectors are provided on a programmable, combinational logic output; each
synthesizer can be selected independently or ANDed together.
The device is programmed over a three-wire, synchronous, serial data bus (clock, data, strobe) with achievable
bit rates as high as 20 Mbits/sec. The data is partitioned into words in such a manner that static parameters may
be sent once during initialization, and dynamic parameters, such as frequency , may be sent as often as needed.
The TRF2020 is offered in a 24-pin plastic thin-shrink small-outline package (TSSOP) and is characterized for
free-air operation from –40°C to 85°C.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TI is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1998, Texas Instruments Incorporated
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
1
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
functional block diagram
R
RF_IN
AUX1_IN
13
S
24
1/32, 33
Prescaler
1/8, 9
Prescaler
5-Bit
Counter
Control Logic
RAB
3-Bit
Counter
11-Bit
Counter
511
11-Bit
Counter
Phase
Detector
FR
2
Charge
Pump
Speed-Up
Counter
6
C
Lock
Detect
15
RPM
18
SWM
17
PDM
U
2
5
LD
21
SW1
AUX2_IN
V
DDPM
V
DDP1
V
DDP2
V
SSP
REF_IN
Control Logic
311
T
12
14
23
11
8
1/8, 9
Prescaler
L
M
N
2
2
2
SDE
3-Bit
Counter
Control Logic
THJ
Main Reference Select
AUX-1 Reference Select
AUX-2 Reference Select
11-Bit
Counter
311
÷ 1÷ 2÷ 4 ÷ 8
7
11-Bit Reference
Counter
11
P
Reference Postscaler Select
Auxiliary Current Ratio
Phase
Detector
S
Speed-Up
Counter
6
G
Phase
Detector
T
Reference Counter
Power Enable
Lock Detect Select
Test Mode
AUX-2 Synthesizer
AUX-1 Synthesizer
Auxiliary Speed-Up
Main Current Ratio
Main Synthesizer
Charge
Pump
Current
Reference
Speed-Up
Counter
2
K
Charge
Pump
2
K
6
G
Address
Decoder
Word-3
Word-2
Word-1
Word-0
22
16
19
20
10
9
1
6
4
PDA1
V
SSA
V
DDA
RPA
SW2
PDA2
V
DD
V
SS
STROBE
3
2
DATA
CLOCK
22-Bit Shift Register
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
2 Bit
I/O
DESCRIPTION
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
Terminal Functions
TERMINAL
NAMENO.
AUX1_IN24IRF input auxiliary-1 synthesizer
AUX2_IN12IRF input auxiliary-2 synthesizer
CLOCK2IClock input
DATA3IData input
LD5OLock detect output
PDA122OAuxiliary-1 synthesizer phase detector output
PDA29OAuxiliary-2 synthesizer phase detector output
PDM17OMain synthesizer phase detector output
REF_IN7IReference input
RF_IN13IMain synthesizer RF input
RPA20IReference current input for AUX-1 and AUX-2 charge pumps
RPM15IReference current input for main charge pump
STROBE4IStrobe input
SWM18OMain analog switch output
SW121OAuxiliary-1 analog switch output
SW210OAuxiliary-2 analog switch output
V
DD
V
DDA
V
DDPM
V
DDP1
V
DDP2
V
SS
V
SSA
V
SSP
1Digital supply voltage
19Analog supply voltage
14Main prescaler supply voltage
23Auxiliary-1 prescaler supply voltage
11Auxiliary-2 prescaler supply voltage
6Digital ground
16Analog ground
8Prescaler ground
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage V
Supply voltage V
Voltage applied to any other pin, V
Power dissipation at or below T
Junction temperature, T
Ambient operating temperature, T
Storage temperature, T
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Analog supply voltage2.7534.5V
Digital supply voltage2.7533.6V
Operating free-air temperature–402585°C
Junction temperature–30105°C
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3
TRF2020
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SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
electrical characteristics with V
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
I
OPER
I
STDBY
I
DDPM
I
DDP1
I
DDP2
NOTES: 1. Operational supply currents measured with RF_IN = 1200 MHz, AUX1_IN = 250 MHz, AUX2_IN = 250 MHz, f
Operational supply currentR = S = T = 1(see Note 1)1113mA
Maximum standby currentR = S = T = 010µA
Main synthesizer operational supply currentR = 1, S = T = 0(see Note 1)68mA
Auxiliary-1 synthesizer operational supply currentR = 0, S = 1, T = 0 (see Note 1)3.34.5mA
Auxiliary-2 synthesizer operational supply currentR = 0, S = 0, T = 1 (see Note 1)3.34.5mA
All loops are in lock condition and normal mode. Operational supply current = I
Data
Strobe
Clock
Data
Strobe
Clock
Data
Strobe
Clock
Data
Strobe
0.7 V
DD
00.3 V
01µA
01µA
REF_IN
+ I
V
DD
= 39.6 MHz.
+ I
DDPM
DD
DD
V
V
ac electrical characteristics with V
DDA
main loop, RF_IN
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
f
RF_IN
P
RF_IN
f
COMP
Input signal frequency2.75 ≤ V
Input sensitivity
Phase detector comparison2.75 ≤ VDD ≤ 3.5 V02MHz
auxiliary loops, AUX1_IN and AUX2_IN
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
f
AUX_IN
P
AUX_IN
f
AUX_
COMP
Input signal frequency2.75 ≤ V
Input sensitivity
Phase detector comparison2.75 ≤ VDD ≤ 3.5 V02MHz
= 4.5 V , V
= VDD = 3 V , TA = 25°C (unless otherwise noted)
DDP
≤ 3.5 V1200MHz
DDP
2.75 ≤ V
R
source
2.75 ≤ V
R
source
≤ 3.5 V,
DDP
= 50 Ω
≤ 3.5 V250MHz
DDP
≤ 3.5 V,
DDP
= 50 Ω
–200dBm
–200dBm
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Z
Input impedance
|I
|
Output current PDM
V
0.5 V
|I
|
Output current PDA1
V
V
Á
Á
Á
Á
|I
|
Output current PDA2
V
V
Á
Á
Á
Á
reference divider, REF_IN
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
f
REF_IN
V
REF_IN
REF_IN
charge pump characteristics
main charge pump output
PDM
D
I
PDM
|I
PDM
∆I
PDM
|I
SWM
†
RPM = RPA = 27 kΩ to V
auxiliary-1 charge pump output
PDA1
D
I
PDA1
ÁÁ
|I
PDA1
∆I
PDA1
|I
SW1
†
RPM = RPA = 27 kΩ to V
auxiliary-2 charge pump output
PDA2
D
I
PDA2
ÁÁ
|I
PDA2
∆I
PDA2
|I
SW2
†
RPM = RPA = 27 kΩ to V
Input signal frequency2.75 ≤ V
Input sensitivity0.3V
p
p
Resistive100kΩ
Capacitive3pF
PARAMETERTEST CONDITIONS
p
Relative output current variation PDM (see Figure 1)
|
Output current matching (see Figure 1)
|
Analog switch output current SWM, speed-up modeV
, F = K = 10.
SSA
PARAMETERTEST CONDITIONS
p
Relative output current variation PDA1
(see Figure 1)
|
БББББББББББ
Output current matching (see Figure 1)
|
Analog switch output current SW1, speed-up modeV
, F = K = 10.
SSA
PARAMETERTEST CONDITIONS
p
Relative output current variation PDA2
БББББББББББ
(see Figure 1)
|
Output current matching (see Figure 1)
|
Analog switch output current SW2, speed-up modeV
, F = K = 10.
SSA
normal mode
speed-up mode
normal mode
speed-up mode
normal mode
speed-up mode
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
≤ 3.5 V40MHz
DDP
– 0.8V
=
PDM
DDA
RPM 5% tolerance,
V
+ 0.5 ≤ V
SSA
V
PDM
SWM
PDA1
= 0.5 V
= 0.5 V
= 0.5
PDM
DDA
DDA
DDA
RPA 5% tolerance
V
+ 0.5 ≤ V
SSA
V
PDA1
SW1
PDA2
= 0.5 V
= 0.5 V
= 0.5
PDA1
DDA
DDA
DDA
RPA 5% tolerance
V
+ 0.5 ≤ V
SSA
V
PDA2
SW2
= 0.5 V
= 0.5 V
PDA2
DDA
DDA
≤ V
≤ V
≤ V
DDA
DDA
DDA
†
– 0.5
†
†
– 0.5
– 0.5
MIN
400
1.5
1.5
MIN
400
1.5
1.5
MIN
400
1.5
1.5
DDP
TYP
MAX
500
600
2
2
TYP
MAX
500
600
2
ÁÁÁ
2
TYP
MAX
500
600
2
ÁÁÁ
2
2.5
15
2.5
2.5
15
2.5
2.5
15
2.5
p–p
UNIT
µA
mA
%
8
%
mA
UNIT
µA
mA
%
Á
8
%
mA
UNIT
µA
mA
Á
%
8
%
mA
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
5
TRF2020
IOZDisabled output current
RPM
RPA
V
DDA
10
nA
Normalandseedumodes
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
Current
I
2
∆ I
REL
OUT
I
1
∆ I
I
SINK
OUT
MATCH
I
SOURCE
∆ I
OUT
REL
V
1
I
2
I
1
V
2
Voltage
Figure 1. Charge-Pump Output Current Definitions
The relative output current variation is defined as the percent difference between charge-pump current output
at two charge-pump output voltages and the mean charge-pump current output:
D
I
OUT REL
Ť
I
OUT MEAN
+2
Ť
(
I
2–I1
|(
I2)
)
x 100%; with V1 = 0.5 V, V2 = V
)|
I
1
DDA
– 0.5 V.
Output current matching is defined as the difference in charge-pump sinking current output and charge-pump
sourcing current output at a given charge-pump output (see Figure 1).
∆I
OUT MATCH
= I
SINK
– I
SOURCE
; with V1 ≤ Voltage ≤ V2.
charge-pump leakage currents, charge pumps not active
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
APPLICATION INFORMATION
C12
VOSC1
14
VCC
VT
2
R17
VCO190–S VARIL
33 k
R21
C59
20 k
0.1 µ F
22 pF
C14
C13
47 pF
820 pF
C19
4700 pF
C43
J2
18
18
220 pF
AUX1_VCO
R25
50
10
RF_OUT
MOD
6
C20
0.1 µ F
220pF
R26
18
R24
R23
C24
DDA
V
R43
24 k
C42
C63
22 pF
VOSC2
C16
68 pF
1
36 k
R19
C18
680pF
18 k
MVCO
7
C6
0.1 µ F
4700 pF
R20
R22
12 k
VT
MOD
3
5
C7
VCCRF_OUT
F
0.1 µ
R12
C61
OUT
VCO191–U VARIL
0.1 µ F
J1
C46
100 pF
18
18
R15
12 k
R18
VDD
C41
0.1 µ F
2423222120191817161514
PDA1
VDDP1
AUX_IN
U1
VDD
CLOCK
DATA
123456789
C39
0.1 µ F
1000 pF
22 pF
OUT
GND
VDD
22 nF
J4
NDK–OSC
VOSC2
C62
C60
REFIN
C23
3
VCC
TCXO
VCONT
2
14
RPA
SW1
VDDA
STROBELDVSS
C15
SWM
REF_IN
DNP
PDM
VSSA
VSSP
PDA2
R56
2
VT
AUX2_VCO
VCC
14
DD
V
RPM
VDDPM
SW2
VDDP2
101112
R54
R59
15 k
C57
51 k
C55
6
10
C64
22 pF
R9
24 k
C44
13
RF_IN
AUX2_IN
C40
12 k
330 pF
33 pF
C52
MOD
RF_OUT
VCO190–S VARIL
0.1 µ F
0.1 µ F
C58
µF
0.1
TRF2020
12 nF
C48
R49
R50
220 pF
18
R47
18
R46
18
18
R11
R10
50
C8
100 pF
50
C45
J3
220pF
12
C22
0.1 µF
VOSC1
C51
0.1 µF
Figure 15. Evaluation Board Schematic (Part 1 of 2)
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
APPLICATION INFORMATION
POWER
GND
DGND
FOR PC INTERFACE ONLY
POWER
HUB
1
14
2
15
3
16
4
17
5
18
6
19
7
20
8
21
9
22
10
23
11
24
12
25
13
+
C1
AGND
CLOCK1
DATA1
STROBE1
µ4.7 F
CLOCK
VR1
1
VT
2
VONCVO
3
VO
VO
4
ANC
LM317LBD
W
R5
CWCCW
1 k
VOPTO
8
7
6
5
R1
220
1.8 k
VDDA
R27
VDDA
+
C2
µ1F
R31
3.6 k
4N28S
VR2
1
VT
2
VONCVO
3
VO
4
ANC
LM317LBD
W
R6
1 k
U2
CWCCW
R28
1.8 k
CLOCK
VO
4N28S
8
7
6
5
R2
220
VDD
R32
3.6 k
+
VDD
C3
µ1F
R29
1.8 k
DATA
U3
1
VT
2
VONCVO
3
VO
4
ANC
R33
3.6 k
4N28S
VR3
LM317LBD
R7
820
VO
VDD
U4
8
7
6
5
R3
270
STROBE
VOSC1
2.7 k
+
R30
C4
µ1F
5
4
MOC8030
VR4
1
VT
2
VONCVO
3
VO
VO
4
ANC
LM317LBD
R8
390
U5
8
7
6
5
R13
270
6
VOSC2
+
C5
1
9
µ1F
R34
1.8 k
LOCK
STROBE
DATA
CLOCK
1
VT
2
VONCVO
3
VO
4
ANC
LM317LBD
VR5
R38
820
To U1/5
To U1/4
To U1/3
To U1/2
VO
8
7
6
5
R37
270
VOPTO
+
C25
µ1F
NOTE: Evaluation board dc supply circuitry
Figure 15. Evaluation Board Schematic (Part 2 of 2)
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
13
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
APPLICATION INFORMATION
Table 1. TRF2020 Evaluation Board Parts List
DESIGNATORSDESCRIPTIONVALUEQTY
C1Capacitor4.7 uF1“A” 3.2x1.6VenkelTA025TCM series
C2, 3, 4, 5, 25Capacitor1 uF5“A” 3.2x1.6VenkelTA025TCM series
C6, 19Capacitor4700 pF20603 1.6x.08MurataGRM39X7R series
C7, 12, 20, 22,
39, 40, 41, 42,
44, 51, 52, 61
C8, 46Capacitor100 pF20603 1.6x.08MurataGRM39X7R series
C13Capacitor820 pF10603 1.6x.08MurataGRM39X7R series
C14Capacitor47 pF10603 1.6x.08MurataGRM39X7R series
C15CapacitorDNP10603 1.6x.08
C16Capacitor68 pF10603 1.6x.08MurataGRM39X7R series
C18Capacitor680 pF10603 1.6x.08MurataGRM39X7R series
C23Capacitor22 nF10603 1.6x.08MurataGRM39X7R series
C24, 43, 45, 48Capacitor220 pF40603 1.6x.08MurataGRM39X7R series
C55Capacitor33 pF10603 1.6x.08MurataGRM39X7R series
C57Capacitor330 pF10603 1.6x.08MurataGRM39X7R series
C58Capacitor12 nF10603 1.6x.08MurataGRM39X7R series
C59, 60, 63, 64Capacitor22 pF40603 1.6x.08MurataGRM39X7R series
C62Capacitor1000 pF10603 1.6x.08MurataGRM39X7R series
R1, 2Resistor22020603 1.6x.08PanasonicERJ–3GSYJ series
R3, 13, 37Resistor27030603 1.6x.08PanasonicERJ–3GSYJ series
R5, 6Resistor1K2.25” squareBourns3269W001 series
R7, 38Resistor82020603 1.6x.08PanasonicERJ–3GSYJ series
R8Resistor39010603 1.6x.08PanasonicERJ–3GSYJ series
R9, 43Resistor24K20603 1.6x.08PanasonicERJ–3GSYJ series
R10, 25, 46Resistor5030603 1.6x.08PanasonicERJ–3GSYJ series
R11, 12, 15, 23,
24, 26, 47, 49, 50
R17Resistor33K10603 1.6x.08PanasonicERJ–3GSYJ series
R18, 20, 54Resistor12K30603 1.6x.08PanasonicERJ–3GSYJ series
R19Resistor36K10603 1.6x.08PanasonicERJ–3GSYJ series
R21Resistor20K10603 1.6x.08PanasonicERJ–3GSYJ series
R22Resistor18K10603 1.6x.08PanasonicERJ–3GSYJ series
R27, 28, 29, 34Resistor1.8K40603 1.6x.08PanasonicERJ–3GSYJ series
R30Resistor2.7K10603 1.6x.08PanasonicERJ–3GSYJ series
R31, 32, 33Resistor3.6K30603 1.6x.08PanasonicERJ–3GSYJ series
R56Resistor51K10603 1.6x.08PanasonicERJ–3GSYJ series
R59Resistor15K10603 1.6x.08PanasonicERJ–3GSYJ series
U1Integrated Circuit1TITRF2020
U2, 3, 4Optoelectronics3730C–04Motorola4N28S
Capacitor0.1 uF120603 1.6x.08MurataGRM39X7R series
Resistor1890603 1.6x.08PanasonicERJ–3GSYJ series
SIZE
(mm)
MANUFACTURER
MANUFACTURER
P/N
14
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
APPLICATION INFORMATION
Table 1. TRF2020 Evaluation Board Parts List (Continued)
DESIGNATORSDESCRIPTIONVALUEQTY
U5Optoelectronics1730C–04MotorolaMOC8030S
VR1, 2, 3, 4, 5Voltage regulator5SO–8
P1Para. connector1AMP747238–4
J1, 2, 3, 4SMA connector4EF Johnson142–0701–831
MVCO
TCXO
AUX 1_VCO
AUX 2_VCO
DATA, VDDA,
VDD, LOCK,
POWER,
CLOCK, GND,
STROBE
Voltage-controlled
oscillator
Temp.-compensated
crystal oscillator
Voltage-controlled
oscillator
Voltage-controlled
oscillator
Test point8Components Corp. TP–105–01 series
ATTEN 10 dB
RL 0 dBm
VAVG 50
1Vari-L Comp.VCO190–U
1ToyocomTCO–980 series
1Vari-L Comp.VCO190–S
1Vari-L Comp.VCO190–S
10 dB/
SIZE
(mm)
MANUFACTURER
National
Semiconductor
MKR –85.33 dB
200 kHz
MANUFACTURER
LM317LBD
P/N
MKR
200 kHz
D
–85.33 dB
CENTER 1.1089992 GHz
RBW 3 kHz VBW 3 kHz
Figure 16. Typical Main Synthesizer Reference Spurs
SPAN 500 kHz
SWP 140 ms
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
15
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
APPLICATION INFORMATION
ATTEN 10 dB
RL 0 dBm
MKR
4 kHz
D
–45.83 dB
CENTER 1.10899908 GHz
RBW 300 Hz VBW 300 Hz
VAVG 50
10 dB/
MKR –45.83 dB
4 kHz
SPAN 30 kHz
SWP 840 ms
Figure 17. Typical Main Synthesizer Close-in Noise at 4 kHz Offset
ATTEN 10 dB
RL 0 dBm
VAVG 50
10 dB/
MKR –51.50 dB
1 kHz
MKR
1 kHz
D
–51.50 dB
CENTER 1.10899918 GHz
RBW 100 Hz VBW 100 Hz
SPAN 10 kHz
SWP 802 ms
Figure 18. Typical Main Synthesizer Close-in Noise at 1 kHz Offset
16
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
APPLICATION INFORMATION
TRACE A: Ch1 FM Main Time
LinMag
A Marker652.3438 us643.05 Hzpk
25
kHzpk
5
kHz
/div
–25
kHzpk
Start: 0 sStop: 1.99609375 ms
Figure 19. Typical Main Synthesizer Transient Response For 35-MHz Jump From 1074 MHz to 1109 MHz
TRACE A: Ch1 FM Main Time
LinMag
A Marker652.4375 us893.77 Hzpk
25
kHzpk
5
kHz
/div
–25
kHzpk
Start: 0 sStop: 1.99609375 ms
Figure 20. Typical Main Synthesizer Transient Response For 35-MHz Jump From 1109 MHz to 1074 MHz
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
17
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
APPLICATION INFORMATION
ATTEN 10 dB
RL 0 dBm
MKR
200 kHz
D
–88.17 dB
CENTER 248 MHz
RBW 3 kHz VBW 3 kHz
VAVG 50
10 dB/
MKR –88.17 dB
200 kHz
SPAN 500 kHz
SWP 140 ms
Figure 21. T ypical Auxiliary-1 Synthesizer Reference Spurs
ATTEN 10 dB
RL 0 dBm
MKR
200 kHz
D
–87.33 dB
VAVG 50
10 dB/
MKR –87.33 dB
200 kHz
18
CENTER 45.2000 MHz
RBW 3 kHz VBW 3 Hz
SPAN 500 kHz
SWP 140 ms
Figure 22. T ypical Auxiliary-2 Synthesizer Reference Spurs
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
PRINCIPLES OF OPERATION
serial port operation
The TRF2020 device registers are manipulated via a synchronous serial data port. The timing relationships are
defined in Figure 2, in the parameter measurement information section. Four 24-bit words are clocked into
temporary holding registers with the least significant bit clocked first. The operation registers are loaded with
the new data residing in the temporary registers with the rising edge of the strobe input.
Each word can be written to the device independently . In this manner, only the words containing the information
required to change the current state of the device need to be written. T o fully program the device, the words are
written in the following order:
Word-3 follows Word-1 and Word-2 because the frequency information for the auxiliary synthesizers is stored
in the operational registers with Word-1 and Word-2. It is necessary to load this frequency information before
the speed-up mode is activated by the auxiliary synthesizers’ power enable bits in Word-3.
TRF2020
Word-0 is written last because the speed-up mode for the main synthesizers is activated by the writing of
Word-0. If the main synthesizer is to be enabled, the power enable bit is written to the device in the preceding
Word-3.
The two most significant bits of each word contain the unique address of the word; the balance of the 22 bits
contains the data fields.
serial word format
23222120191817161514131211109876543210
ADDRDATA
00CBA
01GFED
10NMLKJH
11VUTSRP
serial word format function
A:5-bit NM2 data for main divider coefficient
B:11-bit NM1 data for main divider coefficient
C:6-bit data to control speed-up mode time of main synthesizer analog switch
D:3-bit NM2 data for auxiliary-1 divider coefficient
E:11-bit NM1 data for auxiliary-1 divider coefficient
F:2-bit data to select main synthesizer speed-up/normal mode current ratio
G:6-bit data to control speed-up mode time of auxiliary synthesizers
H:3-bit NM2 data for auxiliary-2 divider coefficient
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
19
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
PRINCIPLES OF OPERATION
serial word format function (continued)
J:11-bit NM1 data for auxiliary-2 divider coefficient
K:2-bit data to select auxiliary synthesizers speed-up/normal mode current ratio
L:2-bit data to select reference postscaler for main synthesizer
M:2-bit data to select reference postscaler for auxiliary-1
N:2-bit data to select reference postscaler for auxiliary-2
P:11-bit data for reference divider coefficient
R:1-bit data to enable main synthesizer power. When 1, power is enabled
S:1-bit data to enable auxiliary-1 synthesizer power. When 1, power is enabled
T:1-bit data to enable auxiliary-2 synthesizer power. When 1, power is enabled
U:2-bit data to select lock detect for main, auxiliary-1, and auxiliary-2 synthesizers
V:6-bit data reserved for test purposes
main prescaler
Main prescaler and speed-up mode coefficients are defined by Word-0 at address 00.
The total division of the main synthesizer prescaler is defined as follows:
TOTAL
where 31 ≤ B < 2
†
The above equation defines a synthesizer operation where contiguous channels exist for all combinations of A and B. If B < 31, the synthesizer
no longer provides contiguous channels. In either case, it is important that the value assigned to A is never greater than the value assigned to
B.
= 32 × B + A,
MAIN
11†
, and 0 ≤ A < 25.
The speed-up mode total-time duration of the main synthesizer analog switch is defined by field C in Word-0
as follows:
TIME
MAIN–SP
+2C
where 1 ≤ C < 2
6
, and f
1
,
f
ref
is the corresponding phase detector reference frequency.
ref
auxiliary-1 prescaler
Auxiliary-1 prescaler coefficients are defined by Word-1 at address 01. The total division of the auxiliary-1
synthesizer prescaler is defined as follows:
TOTAL
where 7 ≤ E < 2
‡
The above equation defines a synthesizer operation where contiguous channels exist for all combinations of D and E. If E < 7, the synthesizer
no longer provides contiguous channels. In either case, it is important that the value assigned to D is never greater than the value assigned to
E.
AUX–1
= 8 × E + D,
11‡
, and 0 ≤ D < 23.
20
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
PRINCIPLES OF OPERATION
auxiliary-1 prescaler (continued)
The speed-up total-time duration of the auxiliary synthesizer boost charge pumps is defined as follows:
TRF2020
TIME
AUX–SP
+2G
where 1 ≤ G < 2
6
, and f
1
,
f
ref
is the corresponding phase detector reference frequency.
ref
The speed-up mode of both auxiliary synthesizers is controlled by field G in Word-1, although each auxiliary
synthesizer has its own independent speed-up mode counter.
auxiliary-2 prescaler
Auxiliary-2 prescaler coefficients are defined by Word-2 at address 10.
The total division of the auxiliary-2 synthesizer prescaler is defined as follows:
TOTAL
where 7 ≤ J < 2
†
The above equation defines a synthesizer operation where contiguous channels exist for all combinations of H and J. If J < 7, the synthesizer
no longer provides contiguous channels. In either case, it is important that the value assigned to H is never greater than the value assigned to
J.
AUX–2
= 8 × J + H,
11†
, and 0 ≤ H < 23.
reference divider postscalers
Each synthesizer section is referenced to the main reference divider through a selectable divide-by-1, -2, -4,
or -8 postscaler (see the reference divider section below). Selection of the additional 1, 2, 4, or 8 division is
determined by the state of bits L, M, and N, as depicted in Word-2 as follows:
Additional Postscaler Division
N1, M1, OR L1N0, M0, OR L0ADDITIONAL DIVISION
001
012
104
118
reference divider
The reference divider coefficients are defined by Word-3 at address 1 1. The total division of the 1 1-bit reference
counter is defined as follows:
TOTAL
REF
where 1 ≤ P < 2
+
1
,
P
11
.
power enable
Each synthesizer section can be enabled/disabled by manipulation of fields R, S, and T of Word-3. The
appropriate synthesizer section is enabled if a logic one (1) is written to the appropriate field.
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
21
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
PRINCIPLES OF OPERATION
lock detect (LD) selection
The phase-locked state of each synthesizer section is indicated by the logic state of the LD terminal. Each
synthesizer section can be selected individually or as an ANDed function by the manipulation of field U in Word-3
as follows:
Additional Postscaler Division
U1U0LOCK DETECT
00MAIN
01AUX-1
10AUX-2
11ANDed
The terms in the ANDed function are dependent on the power enable bit state of each synthesizer section. Only
if the synthesizer section is enabled is its term significant in the ANDed term of the lock detect output. This is
depicted in the following logic equation:
NOTE: All other binary combinations of the test mode field V not shown above are reserved for future use.
Bit 5 in the V-word is used to select an external pulse mode. In the external pulse mode, the CMOS main and
subcounters are fed externally sourced clock pulses through pin 18 instead of from the prescaler inputs as
normally operated. This mode makes testing of the internal CMOS counters easy.
speed-up switching time
main synthesizer
When the main frequency synthesizer is changed in frequency, it may be desirable to increase the loop
bandwidth for a short time in order to achieve a faster lock time. An analog switch is provided that can vary the
topography of the loop filter in order to achieve a faster loop gain. When the frequency is changed (and speed-up
operation is desired), the following actions occur:
TRF2020
1. The new frequency coefficients for the main synthesizer are sent to the device over the serial bus.
2. After the data is clocked in, the strobe is toggled to high.
3. The positive edge of the strobe loads the new frequency into the main synthesizer prescaler (using the next
reference frequency pulse to synchronize).
4. With loading of the main synthesizer prescaler, the speed-up mode analog switch is activated to a
low-impedance state and the speed-up mode charge-pump boost circuit is activated.
5. The speed-up mode is maintained until the main synthesizer speed-up counter, previously loaded with field
C of Word-0, counts down to zero (0). The speed-up counter is clocked with the main synthesizer phase
detector reference frequency.
6. With the speed-up counter reaching a terminal count of zero (0), the speed-up analog switch reverts to the
normal mode high-impedance state, and the speed-up mode charge pump boost circuit is deactivated.
auxiliary synthesizer
Because the frequency of the auxiliary synthesizers is rarely changed during normal operation, speed-up mode
occurs during the independent power enable of the auxiliary synthesizer sections as controlled by fields S and
T in Word-3. Upon the transition of these 1-bit fields from a logic zero (0) to a logic one (1), the following actions
occur:
1. It is assumed that the proper frequency coefficients were written to the corresponding auxiliary synthesizer
prescaler field.
2. The power enable bit for the corresponding auxiliary synthesizer is changed from a zero (0) to a one (1).
3. The positive edge of the strobe loads Word-3, which contains the power enable bit fields (using the next
reference frequency pulse to synchronize).
4. With the loading of Word-3, the speed-up mode charge-pump boost circuit is activated and the analog
switch is activated to a low-impedance state.
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23
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
PRINCIPLES OF OPERATION
auxiliary synthesizer (continued)1234
5. The speed-up mode is maintained until the corresponding speed-up mode counter counts down to a
terminal count of zero. The speed-up counter is clocked with the corresponding auxiliary synthesizer phase
detector reference frequency.
6. With the corresponding speed-up counter reaching terminal count, the speed-up mode charge-pump boost
circuit and the analog switch for the corresponding auxiliary synthesizer revert to the normal mode,
high-impedance, off state.
using the speed-up mode
By changing the loop filter frequency response or the charge-pump output current, the overall closed-loop
response of the synthesizer system is altered. Without careful consideration, synthesizer lock-up times may
degrade rather than improve using the speed-up mode.
selecting current ratios
The normal mode and speed-up mode charge-pump current ratios for the main synthesizer and the auxiliary
synthesizers are selected using field F of Word-1 and field K of Word-2, respectively, as shown in Table 3.
Two external scaling resistors are connected between RPM, RPA, and V
the speed-up mode charge-pump output current for the main synthesizer and the two auxiliary synthesizers as
defined in the following equations. The external scaling resistors in conjunction with the programmable
charge-pump current ratios determine speed-up and normal mode currents.
Main charge-pump speed-up mode current =
Auxiliary charge-pump speed-up mode current =
1
RPM
2mA27 k
1
RPA
W(5kWv
2mA27 k
(analog ground) in order to scale
SSA
RPM
vR),
W(5kWv
RPM
vR),
24
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
MECHANICAL DATA
PW (R-PDSO-G**) PLASTIC SMALL-OUTLINE PACKAGE
14 PIN SHOWN
0,65
14
1
1,20 MAX
A
7
0,05 MIN
0,30
0,19
8
6,60
4,50
4,30
6,20
M
0,10
Seating Plane
0,10
0,15 NOM
Gage Plane
0,25
0°–8°
0,75
0,50
PINS **
DIM
A MAX
A MIN
NOTES: A. All linear dimensions are in millimeters.
B. This drawing is subject to change without notice.
C. Body dimensions do not include mold flash or protrusion not to exceed 0,15.
D. Falls within JEDEC MO-153
8
3,10
2,90
14
5,10
4,90
16
5,10
20
6,60
6,404,90
24
7,90
7,70
28
9,80
9,60
4040064/E 08/96
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
25
IMPORTANT NOTICE
T exas Instruments (TI) reserves the right to make changes to its products or to discontinue any semiconductor
product or service without notice, and advises its customers to obtain the latest version of relevant information
to verify, before placing orders, that the information being relied on is current.
TI warrants performance of its semiconductor products and related software to the specifications applicable at
the time of sale in accordance with TI’s standard warranty. Testing and other quality control techniques are
utilized to the extent TI deems necessary to support this warranty. Specific testing of all parameters of each
device is not necessarily performed, except those mandated by government requirements.
Certain applications using semiconductor products may involve potential risks of death, personal injury, or
severe property or environmental damage (“Critical Applications”).
TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED
TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS OR OTHER
CRITICAL APPLICATIONS.
Inclusion of TI products in such applications is understood to be fully at the risk of the customer. Use of TI
products in such applications requires the written approval of an appropriate TI officer . Questions concerning
potential risk applications should be directed to TI through a local SC sales office.
In order to minimize risks associated with the customer’s applications, adequate design and operating
safeguards should be provided by the customer to minimize inherent or procedural hazards.
TI assumes no liability for applications assistance, customer product design, software performance, or
infringement of patents or services described herein. Nor does TI warrant or represent that any license, either
express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property
right of TI covering or relating to any combination, machine, or process in which such semiconductor products
or services might be or are used.
Copyright 1998, Texas Instruments Incorporated
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