Ideal for Global Systems for Mobile
Communications (GSM) Applications
description
The Texas Instruments (TI) TRF2020 is an
V
DD
CLOCK
DATA
STROBE
LD
V
SS
REF_IN
V
SSP
PDA2
SW2
V
DDP2
AUX2_IN
PW PACKAGE
(TOP VIEW)
1
2
3
4
5
6
7
8
9
10
11
12
24
23
22
21
20
19
18
17
16
15
14
13
integrated high performance frequency synthesizer device. The TRF2020 consists of one main
1.2-GHz synthesizer and two auxiliary 250-MHz
synthesizers. Each synthesizer has an independent dual-modulus prescaler and separate powerdown modes.
These features provide maximum flexibility for the design of 900-MHz wireless systems.
The main synthesizer consists of a 32/33-modulus prescaler with an 1 1-bit counter, a phase-frequency detector ,
and a charge pump. The phase-frequency detector is referenced to an internal reference frequency that is
derived from an external TCXO signal. The phase-frequency detector is also provided with a dead-zone
compensation circuit that reduces synthesizer phase noise during locked conditions.
Each auxiliary synthesizer consists of an independent 8/9-modulus prescaler with an 11-bit counter, a
phase-frequency detector, and a charge pump. Similar to the main synthesizer, each auxiliary synthesizer’s
phase-frequency detector is referenced to an internal reference frequency that is derived from an external
TCXO signal.
AUX1_IN
V
DDP1
PDA1
SW1
RPA
V
DDA
SWM
PDM
V
SSA
RPM
V
DDPM
RF_IN
The external TCXO signal is prescaled by an 11-bit counter and then distributed to three independent
postscalers. Each postscaler provides a selectable, divide-by-1, -2, -4, or -8 function before the reference signal
is distributed to the associated synthesizer phase detector. The reference frequency prescaler and independent
postscalers are software programmable.
To achieve minimum lock-up time, each synthesizer contains a speed-up mode charge pump capable of
providing 2 mA output current and an analog switch that can change the loop-filter time constant. The duration
of the speed-up mode operations can be independently controlled with software.
The states of the three internal lock detectors are provided on a programmable, combinational logic output; each
synthesizer can be selected independently or ANDed together.
The device is programmed over a three-wire, synchronous, serial data bus (clock, data, strobe) with achievable
bit rates as high as 20 Mbits/sec. The data is partitioned into words in such a manner that static parameters may
be sent once during initialization, and dynamic parameters, such as frequency , may be sent as often as needed.
The TRF2020 is offered in a 24-pin plastic thin-shrink small-outline package (TSSOP) and is characterized for
free-air operation from –40°C to 85°C.
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
TI is a trademark of Texas Instruments Incorporated.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1998, Texas Instruments Incorporated
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
1
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
functional block diagram
R
RF_IN
AUX1_IN
13
S
24
1/32, 33
Prescaler
1/8, 9
Prescaler
5-Bit
Counter
Control Logic
RAB
3-Bit
Counter
11-Bit
Counter
511
11-Bit
Counter
Phase
Detector
FR
2
Charge
Pump
Speed-Up
Counter
6
C
Lock
Detect
15
RPM
18
SWM
17
PDM
U
2
5
LD
21
SW1
AUX2_IN
V
DDPM
V
DDP1
V
DDP2
V
SSP
REF_IN
Control Logic
311
T
12
14
23
11
8
1/8, 9
Prescaler
L
M
N
2
2
2
SDE
3-Bit
Counter
Control Logic
THJ
Main Reference Select
AUX-1 Reference Select
AUX-2 Reference Select
11-Bit
Counter
311
÷ 1÷ 2÷ 4 ÷ 8
7
11-Bit Reference
Counter
11
P
Reference Postscaler Select
Auxiliary Current Ratio
Phase
Detector
S
Speed-Up
Counter
6
G
Phase
Detector
T
Reference Counter
Power Enable
Lock Detect Select
Test Mode
AUX-2 Synthesizer
AUX-1 Synthesizer
Auxiliary Speed-Up
Main Current Ratio
Main Synthesizer
Charge
Pump
Current
Reference
Speed-Up
Counter
2
K
Charge
Pump
2
K
6
G
Address
Decoder
Word-3
Word-2
Word-1
Word-0
22
16
19
20
10
9
1
6
4
PDA1
V
SSA
V
DDA
RPA
SW2
PDA2
V
DD
V
SS
STROBE
3
2
DATA
CLOCK
22-Bit Shift Register
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
2 Bit
I/O
DESCRIPTION
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
Terminal Functions
TERMINAL
NAMENO.
AUX1_IN24IRF input auxiliary-1 synthesizer
AUX2_IN12IRF input auxiliary-2 synthesizer
CLOCK2IClock input
DATA3IData input
LD5OLock detect output
PDA122OAuxiliary-1 synthesizer phase detector output
PDA29OAuxiliary-2 synthesizer phase detector output
PDM17OMain synthesizer phase detector output
REF_IN7IReference input
RF_IN13IMain synthesizer RF input
RPA20IReference current input for AUX-1 and AUX-2 charge pumps
RPM15IReference current input for main charge pump
STROBE4IStrobe input
SWM18OMain analog switch output
SW121OAuxiliary-1 analog switch output
SW210OAuxiliary-2 analog switch output
V
DD
V
DDA
V
DDPM
V
DDP1
V
DDP2
V
SS
V
SSA
V
SSP
1Digital supply voltage
19Analog supply voltage
14Main prescaler supply voltage
23Auxiliary-1 prescaler supply voltage
11Auxiliary-2 prescaler supply voltage
6Digital ground
16Analog ground
8Prescaler ground
absolute maximum ratings over operating free-air temperature (unless otherwise noted)
Supply voltage V
Supply voltage V
Voltage applied to any other pin, V
Power dissipation at or below T
Junction temperature, T
Ambient operating temperature, T
Storage temperature, T
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Analog supply voltage2.7534.5V
Digital supply voltage2.7533.6V
Operating free-air temperature–402585°C
Junction temperature–30105°C
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
3
TRF2020
ť
ť
ťťť
ť
ťť
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
electrical characteristics with V
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
I
OPER
I
STDBY
I
DDPM
I
DDP1
I
DDP2
NOTES: 1. Operational supply currents measured with RF_IN = 1200 MHz, AUX1_IN = 250 MHz, AUX2_IN = 250 MHz, f
Operational supply currentR = S = T = 1(see Note 1)1113mA
Maximum standby currentR = S = T = 010µA
Main synthesizer operational supply currentR = 1, S = T = 0(see Note 1)68mA
Auxiliary-1 synthesizer operational supply currentR = 0, S = 1, T = 0 (see Note 1)3.34.5mA
Auxiliary-2 synthesizer operational supply currentR = 0, S = 0, T = 1 (see Note 1)3.34.5mA
All loops are in lock condition and normal mode. Operational supply current = I
Data
Strobe
Clock
Data
Strobe
Clock
Data
Strobe
Clock
Data
Strobe
0.7 V
DD
00.3 V
01µA
01µA
REF_IN
+ I
V
DD
= 39.6 MHz.
+ I
DDPM
DD
DD
V
V
ac electrical characteristics with V
DDA
main loop, RF_IN
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
f
RF_IN
P
RF_IN
f
COMP
Input signal frequency2.75 ≤ V
Input sensitivity
Phase detector comparison2.75 ≤ VDD ≤ 3.5 V02MHz
auxiliary loops, AUX1_IN and AUX2_IN
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
f
AUX_IN
P
AUX_IN
f
AUX_
COMP
Input signal frequency2.75 ≤ V
Input sensitivity
Phase detector comparison2.75 ≤ VDD ≤ 3.5 V02MHz
= 4.5 V , V
= VDD = 3 V , TA = 25°C (unless otherwise noted)
DDP
≤ 3.5 V1200MHz
DDP
2.75 ≤ V
R
source
2.75 ≤ V
R
source
≤ 3.5 V,
DDP
= 50 Ω
≤ 3.5 V250MHz
DDP
≤ 3.5 V,
DDP
= 50 Ω
–200dBm
–200dBm
4
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
Z
Input impedance
|I
|
Output current PDM
V
0.5 V
|I
|
Output current PDA1
V
V
Á
Á
Á
Á
|I
|
Output current PDA2
V
V
Á
Á
Á
Á
reference divider, REF_IN
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
f
REF_IN
V
REF_IN
REF_IN
charge pump characteristics
main charge pump output
PDM
D
I
PDM
|I
PDM
∆I
PDM
|I
SWM
†
RPM = RPA = 27 kΩ to V
auxiliary-1 charge pump output
PDA1
D
I
PDA1
ÁÁ
|I
PDA1
∆I
PDA1
|I
SW1
†
RPM = RPA = 27 kΩ to V
auxiliary-2 charge pump output
PDA2
D
I
PDA2
ÁÁ
|I
PDA2
∆I
PDA2
|I
SW2
†
RPM = RPA = 27 kΩ to V
Input signal frequency2.75 ≤ V
Input sensitivity0.3V
p
p
Resistive100kΩ
Capacitive3pF
PARAMETERTEST CONDITIONS
p
Relative output current variation PDM (see Figure 1)
|
Output current matching (see Figure 1)
|
Analog switch output current SWM, speed-up modeV
, F = K = 10.
SSA
PARAMETERTEST CONDITIONS
p
Relative output current variation PDA1
(see Figure 1)
|
БББББББББББ
Output current matching (see Figure 1)
|
Analog switch output current SW1, speed-up modeV
, F = K = 10.
SSA
PARAMETERTEST CONDITIONS
p
Relative output current variation PDA2
БББББББББББ
(see Figure 1)
|
Output current matching (see Figure 1)
|
Analog switch output current SW2, speed-up modeV
, F = K = 10.
SSA
normal mode
speed-up mode
normal mode
speed-up mode
normal mode
speed-up mode
TRF2020
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
≤ 3.5 V40MHz
DDP
– 0.8V
=
PDM
DDA
RPM 5% tolerance,
V
+ 0.5 ≤ V
SSA
V
PDM
SWM
PDA1
= 0.5 V
= 0.5 V
= 0.5
PDM
DDA
DDA
DDA
RPA 5% tolerance
V
+ 0.5 ≤ V
SSA
V
PDA1
SW1
PDA2
= 0.5 V
= 0.5 V
= 0.5
PDA1
DDA
DDA
DDA
RPA 5% tolerance
V
+ 0.5 ≤ V
SSA
V
PDA2
SW2
= 0.5 V
= 0.5 V
PDA2
DDA
DDA
≤ V
≤ V
≤ V
DDA
DDA
DDA
†
– 0.5
†
†
– 0.5
– 0.5
MIN
400
1.5
1.5
MIN
400
1.5
1.5
MIN
400
1.5
1.5
DDP
TYP
MAX
500
600
2
2
TYP
MAX
500
600
2
ÁÁÁ
2
TYP
MAX
500
600
2
ÁÁÁ
2
2.5
15
2.5
2.5
15
2.5
2.5
15
2.5
p–p
UNIT
µA
mA
%
8
%
mA
UNIT
µA
mA
%
Á
8
%
mA
UNIT
µA
mA
Á
%
8
%
mA
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
5
TRF2020
IOZDisabled output current
RPM
RPA
V
DDA
10
nA
Normalandseedumodes
SYNTHESIZER FOR GLOBAL SYSTEM
FOR MOBILE (GSM) CELLULAR TELEPHONES
SLWS020B – FEBRUAR Y 1995 – REVISED JANUAR Y 1998
Current
I
2
∆ I
REL
OUT
I
1
∆ I
I
SINK
OUT
MATCH
I
SOURCE
∆ I
OUT
REL
V
1
I
2
I
1
V
2
Voltage
Figure 1. Charge-Pump Output Current Definitions
The relative output current variation is defined as the percent difference between charge-pump current output
at two charge-pump output voltages and the mean charge-pump current output:
D
I
OUT REL
Ť
I
OUT MEAN
+2
Ť
(
I
2–I1
|(
I2)
)
x 100%; with V1 = 0.5 V, V2 = V
)|
I
1
DDA
– 0.5 V.
Output current matching is defined as the difference in charge-pump sinking current output and charge-pump
sourcing current output at a given charge-pump output (see Figure 1).
∆I
OUT MATCH
= I
SINK
– I
SOURCE
; with V1 ≤ Voltage ≤ V2.
charge-pump leakage currents, charge pumps not active