TPS74401
GND
EN
FB
IN PG
SS
OUT
V
IN
V
OUT
V
PG
R
1
R
2
R
3
C
OUT
Optional
C
IN
1 Fm
C
SS
V
BIAS
C
BIAS
1 Fm
BIAS
1V/div
500mV/div
Time(1ms/div)
C =0 FSSm
C =0.001 FSSm
C =0.0047 FSSm
V
OUT
V
EN
0V
1.1V
TPS74401
www.ti.com
3.0A Ultra-LDO with Programmable Soft-Start
1
FEATURES
2
• Soft-Start (SS) Pin Provides a Linear Startup
with Ramp Time Set by External Capacitor
• 1% Accuracy Over Line, Load, and
Temperature
• Supports Input Voltages as Low as 0.9V with
External Bias Supply
• Adjustable Output (0.8V to 3.6V)
• Ultra-Low Dropout: 115mV at 3.0A (typ)
• Stable with Any or No Output Capacitor
• Excellent Transient Response
• Available in 5mm × 5mm × 1mm QFN and
DDPAK-7 Packages
• Open-Drain Power-Good (QFN only)
• Active High Enable
APPLICATIONS
• FPGA Applications
• DSP Core and I/O Voltages
• Post-Regulation Applications
• Applications with Special Start-Up Time or
Sequencing Requirements
• Hot-Swap and Inrush Controls
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
DESCRIPTION
The TPS74401 low-dropout (LDO) linear regulator
provides an easy-to-use robust power management
solution for a wide variety of applications.
User-programmable soft-start minimizes stress on the
input power source by reducing capacitive inrush
current on start-up. The soft-start is monotonic and
well-suited for powering many different types of
processors and ASICs. The enable input and
power-good output allow easy sequencing with
external regulators. This complete flexibility permits
the user to configure a solution that will meet the
sequencing requirements of FPGAs, DSPs, and other
applications with specific start-up requirements.
A precision reference and error amplifier deliver 1%
accuracy over load, line, temperature, and process.
Each LDO is stable with low-cost ceramic output
capacitors and the device is fully specified from
– 40 ° C to +125 ° C. The TPS74401 is offered in a small
(5mm × 5mm) QFN package, yielding a highly
compact total solution size. For applications that
require additional power dissipation, the DDPAK
(KTW) package is also available.
Figure 1. Typical Application Circuit
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
2 All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Figure 2. Turn-On Response
Copyright © 2005 – 2008, Texas Instruments Incorporated
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
PRODUCT V
TPS744 xxyyyz XX is nominal output voltage (for example, 12 = 1.2V, 15 = 1.5V, 01 = Adjustable).
(1)
(2)
OUT
(3)
YYY is package designator.
Z is package quantity.
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com .
(2) Output voltages from 0.9V to 1.5V in 50mV increments and 1.5V to 3.6V in 100mV increments are available through the use of
innovative factory EEPROM programming; minimum order quantities may apply. Contact factory for details and availability.
(3) For fixed 0.8V operation, tie FB to OUT.
ABSOLUTE MAXIMUM RATINGS
(1)
At TJ= – 40 ° C to +125 ° C, unless otherwise noted. All voltages are with respect to GND.
TPS74401 UNIT
VIN, V
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for
extended periods may affect device reliability.
Input voltage range – 0.3 to +6 V
BIAS
V
Enable voltage range – 0.3 to +6 V
EN
V
Power-good voltage range – 0.3 to +6 V
PG
IPGPG sink current 0 to +1.5 mA
V
SS pin voltage range – 0.3 to +6 V
SS
V
Feedback pin voltage range – 0.3 to +6 V
FB
V
Output voltage range – 0.3 to VIN+ 0.3 V
OUT
I
Maximum output current Internally limited
OUT
Output short circuit duration Indefinite
P
Continuous total power dissipation See Dissipation Ratings Table
DISS
TJOperating junction temperature range – 40 to +125 ° C
T
Storage junction temperature range – 55 to +150 ° C
STG
DISSIPATION RATINGS
PACKAGE θ
RGW (QFN)
KTW (DDPAK)
(1)
(2)
JA
36.5 ° C/W 4.05 ° C/W 2.74W 27.4mW/ ° C
18.8 ° C/W 2.32 ° C/W 5.32W 53.2mW/ ° C
θ
JC
(1) See Figure 33 for PCB layout description.
(2) See Figure 36 for PCB layout description.
2 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS74401
TA< +25 ° C DERATING FACTOR
POWER RATING ABOVE TA= +25 ° C
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
ELECTRICAL CHARACTERISTICS
At V
= 1.1V, V
EN
unless otherwise noted. Typical values are at TJ= +25 ° C.
V
IN
V
BIAS
V
REF
V
OUT
V
/V
OUT
IN
V
/I
OUT
OUT
V
DO
ICLCurrent limit A
I
BIAS
I
SHDN
IFBFeedback pin current
(4)
PSRR
Noise Output noise voltage 16 × V
V
TRAN
t
STR
ISSSoft-start charging current V
V
EN, HI
V
EN, LO
V
EN, HYS
V
EN, DG
IENEnable pin current V
V
IT
V
HYS
V
PG, LO
I
PG, LKG
T
J
= V
OUT
+ 0.3V, C
IN
= C
IN
BIAS
= 0.1 µ F, C
OUT
= 10 µ F, I
OUT
= 50mA, V
BIAS
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range V
OUT
Bias pin voltage range 2.375 5.25 V
Internal reference (Adj.) TJ= +25 ° C 0.796 0.8 0.804 V
Output voltage range VIN= 5V, I
Accuracy
Line regulation %/V
Load regulation
VINdropout voltage
V
Bias pin current I
Shutdown supply current
(V
Power-supply rejection
(V
Power-supply rejection
(V
(1)
2.97V ≤ V
V
OUT (NOM)
V
OUT (NOM)
0mA ≤ I
50mA ≤ I
I
= 3.0A, V
(2)
dropout voltage
BIAS
)
IN
(2)
(3)
OUT
I
= 3.0A, V
OUT
DDPAK
I
= 3.0A, VIN= V
OUT
V
= 80% × V
OUT
V
= 80% × V
OUT
= 0mA to 3.0A 2 4 mA
OUT
V
≤ 0.4V 1 100 µ A
EN
I
= 50mA to 3.0A – 250 95 250 nA
OUT
1kHz, I
to V
IN
)
OUT
800kHz, I
V
= 1.5V
OUT
1kHz, I
to V
BIAS
)
OUT
800kHz, I
V
= 1.5V
OUT
100Hz to 100kHz, I
C
= 0.001 µ F
SS
%V
droop during load
OUT
transient
Minimum startup time I
I
= 100mA to 3.0A at 1A/ µ s, C
OUT
= 1.5A, C
OUT
= 0.4V 0.5 0.73 1 µ A
SS
= 1.5A, V
OUT
≤ 5.25V, 50mA ≤ I
BIAS
+ 0.3 ≤ V
+ 0.3 ≤ V
≤ 50mA 0.013 %/mA
OUT
≤ 3.0A 0.03 %/A
OUT
– V
BIAS
– V
BIAS
BIAS
OUT (NOM)
OUT (NOM)
= 1.5A, VIN= 1.8V, V
OUT
= 1.5A, VIN= 1.8V,
OUT
= 1.5A, VIN= 1.8V, V
OUT
= 1.5A, VIN= 1.8V,
OUT
OUT
= open 100 µ s
SS
= 5V V
BIAS
≤ 3.0A – 1 ± 0.2 +1 %
OUT
≤ 5.5V, QFN 0.0005 0.05
IN
≤ 5.5V, DDPAK 0.0005 0.06
IN
OUT (NOM)
OUT (NOM)
≥ 1.62V, QFN 115 195
≥ 1.62V,
, QFN 3.8 6.0
, DDPAK 3.5 6.0
= 1.5V 73
OUT
= 1.5V 62
OUT
= 1.5A,
= 0 µ F 4 %V
OUT
Enable input high level 1.1 5.5 V
Enable input low level 0 0.4 V
Enable pin hysteresis 50 mV
Enable pin deglitch time 20 µ s
= 5V 0.1 1 µ A
EN
PG trip threshold V
decreasing 86.5 90 93.5 %V
OUT
PG trip hysteresis 3 %V
PG output low voltage IPG= 1mA (sinking), V
PG leakage current V
PG
= 5.25V, V
OUT
Operating junction
temperature
< V
OUT
IT
> V
IT
– 40 +125 ° C
TPS74401
= 5.0V, and TJ= – 40 ° C to +125 ° C,
TPS74401
+ V
DO
REF
120 240
42
50
OUT
0.03 1 µ A
5.5 V
3.6 V
1.62 V
0.3 V
mV
dB
dB
µ V
RMS
OUT
OUT
OUT
(1) Adjustable devices tested at 0.8V; external resistor tolerance is not taken into account.
(2) Dropout is defined as the voltage from the input to V
(3) IFBcurrent flow is out of the device.
when V
OUT
is 2% below nominal.
OUT
(4) See Figure 10 to Figure 13 for PSRR at different conditions.
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s): TPS74401
Thermal
Limit
Soft-Start
Discharge
OUT
V
OUT
FB
PG
IN
BIAS
SS
EN
Hysteresis
andDe-Glitch
Current
Limit
UVLO
0.73 Am
0.8V
Reference
0.9 ´ V
REF
GND
C
SS
R
1
R
2
V =0.8x( )
OUT
1+
R
1
R
2
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
ELECTRICAL CHARACTERISTICS (continued)
At V
= 1.1V, V
EN
unless otherwise noted. Typical values are at TJ= +25 ° C.
T
SD
= V
OUT
+ 0.3V, C
IN
= C
IN
BIAS
= 0.1 µ F, C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Thermal shutdown
temperature
Shutdown, temperature increasing +155
Reset, temperature decreasing +140
BLOCK DIAGRAM
OUT
= 10 µ F, I
OUT
= 50mA, V
= 5.0V, and TJ= – 40 ° C to +125 ° C,
BIAS
TPS74401
° C
Table 1. Standard 1% Resistor Values for Programming the Output Voltage
R1(k Ω ) R2(k Ω ) V
(1)
(V)
OUT
Short Open 0.8
0.619 4.99 0.9
1.13 4.53 1.0
1.37 4.42 1.05
1.87 4.99 1.1
2.49 4.99 1.2
4.12 4.75 1.5
3.57 2.87 1.8
3.57 1.69 2.5
3.57 1.15 3.3
(1) V
= 0.8 × (1 + R1/R2)
OUT
4 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS74401
5 5QFN(RGW)´
Package TopView¾
IN
IN
IN
PG
BIAS
OUT
OUT
OUT
NC
FB
TPS74401
IN
EN
11
GND
12
NC
13
NC
14
SS
15
6
7
8
9
10
20
19
18
17
16
5
NC 4
NC 3
NC 2
OUT 1
GND
7-Lead
DDPAK(KTW)
Surface-Mount
OUT
GND
BIAS
IN
FB
SS
1 2 3 4
5
6EN7
Table 2. Standard Capacitor Values for Programming the Soft-Start Time
(1) tSS(s) = 0.8 × CSS(F)/7.3 × 10
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
C
SS
SOFT-START TIME
Open 0.1ms
470pF 0.5ms
1000pF 1ms
4700pF 5ms
0.01 µ F 10ms
0.015 µ F 16ms
– 7
TPS74401
(1)
PIN DESCRIPTIONS
NAME KTW (DDPAK) RGW (QFN) DESCRIPTION
IN 5 5 – 8 Unregulated input to the device.
EN 7 11
SS 1 15 Soft-Start pin. A capacitor connected on this pin to ground sets the start-up
BIAS 6 10 Bias input voltage for error amplifier, reference, and internal control circuits.
PG N/A 9 low-impedance state. A pull-up resistor from 10k Ω to 1M Ω should be connected
FB 2 16
OUT 3 1, 18 – 20 Regulated output voltage. No capacitor is required on this pin for stability.
NC N/A 2 – 4, 13, 14, 17
GND 4 12 Ground
PAD/TAB Should be soldered to the ground plane for increased thermal performance.
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 5
Enable pin. Driving this pin high enables the regulator. Driving this pin low puts
the regulator into shutdown mode. This pin must not be left floating.
time. If this pin is left floating, the regulator output soft-start ramp time is
typically 100 µ s.
Power-Good (PG) is an open-drain, active-high output that indicates the status
of V
. When V
OUT
high-impedance state. When V
exceeds the PG trip threshold, the PG pin goes into a
OUT
is below this threshold the pin is driven to a
OUT
from this pin to a supply up to 5.5V. The supply can be higher than the input
voltage. Alternatively, the PG pin can be left floating if output monitoring is not
necessary.
This pin is the feedback connection to the center tap of an external resistor
divider network that sets the output voltage. This pin must not be left floating.
No connection. This pin can be left floating or connected to GND to allow better
thermal contact to the top-side plane.
Product Folder Link(s): TPS74401
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-0.1
0
10 20 30 40
ChangeinV (%)
OUT
I (mA)
OUT
50
+125 C°
+25 C°
-40 C°
ReferredtoI =50mA
OUT
0.050
0.025
0
-0.025
-0.050
-0.075
-0.100
-0.125
-0.150
50
500 1000 1500 2000 2500
ChangeinV (%)
OUT
I (mA)
OUT
3000
+125 C°
+25 C°
- ° 40 C
ReferredtoI =50mA
OUT
0.05
0.04
0.03
0.02
0.01
0
-0.01
-0.02
-0.03
-0.04
-0.05
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ChangeinV (%)
OUT
V V -
IN OUT
(V)
4.5
T = 40- ° JC
TJ=+25° C
TJ=+125° C
0
500 1000 1500 2000 2500
I (mA)
OUT
3000
200
150
100
50
0
DropoutV
oltage(mV)
+125 C°
+25 C°
- ° 40 C
300
250
200
150
100
50
0
0.9
1.4 1.9 2.4 2.9 3.4
DropoutV
oltage(mV)
V V -
BIAS OUT
(V)
3.9
+125 C°
+25 C°
- ° 40 C
I =3.0A
OUT
200
180
160
140
120
100
80
60
40
20
0
0.9
1.4 1.9 2.4 2.9 3.4
DropoutVoltage(mV)
V V -
BIAS OUT
(V)
3.9
+125 C°
+25 C°
-40° C
I =1.5A
OUT
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
At TJ= +25 ° C, V
OUT
= 1.5V, V
= V
IN
LOAD REGULATION LOAD REGULATION
Figure 3. Figure 4.
TYPICAL CHARACTERISTICS
OUT(TYP)
+ 0.3V, V
C
= 10 µ F, unless otherwise noted.
OUT
BIAS
= 3.3V, I
OUT
= 50mA, C
IN
= 1 µ F, C
= 1 µ F, C
BIAS
SS
= 0.01 µ F, and
LINE REGULATION I
AND TEMPERATURE (TJ)
OUT
Figure 5. Figure 6.
VINDROPOUT VOLTAGE vs VINDROPOUT VOLTAGE vs
V
– V
VINDROPOUT VOLTAGE vs
BIAS
AND TEMPERATURE (TJ) V
OUT
– V
BIAS
AND TEMPERATURE (TJ)
OUT
6 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Figure 7. Figure 8.
Product Folder Link(s): TPS74401
1400
1300
1200
1100
1000
900
800
700
600
500
0
500 1000 1500 2000 2500
DropoutVoltage(mV)
I (mA)
OUT
3000
+125 C°
+25 C°
-40 C°
V =V
IN BIAS
80
70
60
50
40
30
20
10
0
10
100 1k 10k 100k 1M
Power-SupplyRejectionRatio(dB)
Frequency(Hz)
10M
I =3.0A
OUT
100
90
80
70
60
50
40
30
20
10
0
10
100 1k 10k 100k 1M
Power
-SupplyRejectionRatio(dB)
Frequency(Hz)
10M
V =1.8,V =1.5V
IN OUT OUT
,I =1.5A
C =0 F
OUT
m
C =10 F
OUT
m
C =100 F
OUT
m
100
90
80
70
60
50
40
30
20
10
0
10
100 1k 10k 100k 1M
Power
-SupplyRejectionRatio(dB)
Frequency(Hz)
10M
V =1.8,V =1.5V
IN OUT OUT
,I =100mA
C =10 F
OUT
m
C =100 F
OUT
m
C =0 F
OUT
m
100
90
80
70
60
50
40
30
20
10
0
10
100 1k 10k 100k 1M
Power
-SupplyRejectionRatio(dB)
Frequency(Hz)
10M
V =1.8,V =1.5V
IN OUT OUT
,I =3A
C =100 F
OUT
m
C =0 F
OUT
m
C =10 F
OUT
m
90
80
70
60
50
40
30
20
10
0
0
0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25
Power-SupplyRejectionRatio(dB)
V V -
IN OUT
(V)
2.50
1kHz
100kHz
300kHz
700kHz
C =22 F
I =1.5A
m
OUT
OUT
At TJ= +25 ° C, V
C
= 10 µ F, unless otherwise noted.
OUT
TYPICAL CHARACTERISTICS (continued)
= 1.5V, V
OUT
V
BIAS
I
AND TEMPERATURE (TJ) V
OUT
= V
IN
OUT(TYP)
DROPOUT VOLTAGE vs
+ 0.3V, V
BIAS
= 3.3V, I
OUT
= 50mA, C
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
IN
= 1 µ F, C
BIAS
= 1 µ F, C
BIAS
SS
= 0.01 µ F, and
PSRR vs FREQUENCY
Figure 9. Figure 10.
VINPSRR vs FREQUENCY VINPSRR vs FREQUENCY
Figure 11. Figure 12.
VINPSRR vs FREQUENCY VINPSRR vs V
– V
IN
OUT
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 7
Figure 13. Figure 14.
Product Folder Link(s): TPS74401
1
0.1
0.01
100
1k 10k
OutputSpectralNoiseDensity(
mV/
Ö ) Hz
Frequency(Hz)
100k
C =1nF
SS
C =0nF
SS
C =10nF
SS
I =3A
OUT
V =1.1V
OUT
1
0.1
0.01
100
1k 10k
OutputSpectralNoiseDensity( V/
)
m Ö
Hz
Frequency(Hz)
100k
V =3.3V
OUT
V =2.5V
OUT
V =1.5V
OUT
V =1.1V
OUT
V =0.8V
OUT
V :V +1.62V
BIAS OUT
I :3A
OUT
C :1 F(Ceramic)m
IN
C :1 F(Ceramic)m
OUT
R ,R :(seeTable1)
1 2
2.85
2.65
2.45
2.25
2.05
1.85
1.65
1.45
1.25
0
500 1000 1500 2000 2500
BiasCurrent(mA)
I (mA)
OUT
3000
+125 C°
+25 C°
- ° 40 C
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
2.0
2.5 3.0 3.5 4.0 4.5
BiasCurrent(mA)
V (V)
BIAS
5.0
T =J+125 C°
T =+25 C°
J
T =J- ° 40 C
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
-40
-20 0 20 40 60 80 100
BiasCurrent( A)m
120
V =2.375V
BIAS
V =5.5V
BIAS
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
At TJ= +25 ° C, V
C
= 10 µ F, unless otherwise noted.
OUT
OUT
= 1.5V, V
= V
IN
NOISE SPECTRAL DENSITY NOISE SPECTRAL DENSITY
Figure 15. Figure 16.
TYPICAL CHARACTERISTICS (continued)
OUT(TYP)
+ 0.3V, V
BIAS
= 3.3V, I
OUT
= 50mA, C
IN
= 1 µ F, C
= 1 µ F, C
BIAS
SS
= 0.01 µ F, and
I
vs I
BIAS
AND TEMPERATURE I
OUT
vs V
BIAS
AND V
BIAS
OUT
Figure 17. Figure 18.
I
SHUTDOWN vs TEMPERATURE
BIAS
8 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Figure 19.
Product Folder Link(s): TPS74401
765
750
735
720
705
690
675
-40
-20 0 20 40 60 80 100 120
I
(nA)
SS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V Low-LevelPGVoltage(V)
OL
0
2 4
6 8 10
12
PGCurrent(mA)
At TJ= +25 ° C, V
C
= 10 µ F, unless otherwise noted.
OUT
OUT
= 1.5V, V
TYPICAL CHARACTERISTICS (continued)
= V
IN
OUT(TYP)
+ 0.3V, V
BIAS
= 3.3V, I
OUT
= 50mA, C
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
IN
= 1 µ F, C
= 1 µ F, C
BIAS
SS
= 0.01 µ F, and
SOFT-START CHARGING CURRENT (ISS)
vs TEMPERATURE LOW-LEVEL PG VOLTAGE vs PG CURRENT
Figure 20. Figure 21.
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Link(s): TPS74401
50mV/div
50mV/div
50mV/div
50mV/div
2A/div
Time(50 s/div)m
C = 2x470 F(OSCON)
OUT
m
C = 100 F Cer.
OUT
m
C = 10 F Cer.
OUT
m
C =
OUT
0 Fm
1A/ sm
3.0A
100mA
10mV/div
10mV/div
10mV/div
10mV/div
500mV/div
Time(50 s/div)m
C =2x470 F(OSCON)
OUT
m
C =100 F(Cer.)
OUT
m
C =10 F(Cer.)
OUT
m
C =0 F
OUT
m
1V/ sm
4.3V
3.3V
1V/div
500mV/div
Time(1ms/div)
C =0 FSSm
C =0.001 FSSm
C =0.0047 FSSm
V
OUT
V
EN
0V
1.1V
10mV/div
10mV/div
10mV/div
10mV/div
500mV/div
Time(50 s/div)m
C =2x470 F
OUT
m
C =100 F(Cer.)
OUT
m
C =10 F
OUT
(Cer.)m
C =0 F
OUT
m
1V/ sm
2.5V
1.5V
V =1.2V
OUT
(OSCON)
Time(20 s/div)m
V
OUT
50mV/div
I
OUT
1A/div
OutputOpen
OutputShorted
V =0.8V
OUT
1V/div
Time(20ms/div)
V (500mV/div)
PG
V
OUT
V =V =V
IN BIAS EN
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
At TJ= +25 ° C, V
C
= 10 µ F, unless otherwise noted.
OUT
OUT
= 1.5V, V
= V
IN
TYPICAL CHARACTERISTICS (continued)
OUT(TYP)
+ 0.3V, V
BIAS
= 3.3V, I
OUT
= 50mA, C
IN
= 1 µ F, C
= 1 µ F, C
BIAS
SS
= 0.01 µ F, and
LOAD TRANSIENT RESPONSE V
Figure 22. Figure 23.
VINLINE TRANSIENT (3A) TURN-ON RESPONSE
LINE TRANSIENT (3A)
BIAS
Figure 24. Figure 25.
POWER-UP/POWER-DOWN OUTPUT SHORT-CIRCUIT RECOVERY
10 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Figure 26. Figure 27.
Product Folder Link(s): TPS74401
TPS74401
GND
EN
FB
IN PG
SS
OUT
V
IN
V
OUT
V
PG
R
1
R
2
R
3
C
OUT
Optional
C
IN
1 Fm
C
SS
V
BIAS
C
BIAS
1 Fm
V =0.8
OUT
´ 1+
R
1
R
2
(
)
BIAS
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
APPLICATION INFORMATION
The TPS74401 belongs to a family of new
generation ultra-low dropout regulators that feature
soft-start and tracking capabilities. These regulators The device does not require any output capacitor for
use a low current bias input to power all internal stability. If an output capacitor is needed, the device
control circuitry, allowing the NMOS pass transistor to is designed to be stable for all available types and
regulate very low input and output voltages. values of output capacitance. The device is also
The use of an NMOS-pass FET offers several critical
advantages for many applications. Unlike a PMOS
topology device, the output capacitor has little effect The capacitance required on the IN and BIAS pins
on loop stability. This architecture allows the strongly depends on the input supply source
TPS74401 to be stable with any or even no output impedance. To counteract any inductance in the
capacitor. Transient response is also superior to input, the minimum recommended capacitor for V
PMOS topologies, particularly for low V
IN
applications. the same supply, the recommended minimum
The TPS74401 features a programmable,
voltage-controlled soft-start circuit that provides a
smooth, monotonic start-up and limits startup inrush
currents that may be caused by large capacitive
loads. A power-good (PG) output is available to allow
supply monitoring and sequencing of other supplies.
An enable (EN) pin with hysteresis and deglitch
allows slow-ramping signals to be used for
sequencing the device. The low V
and V
IN
OUT
capability allows for inexpensive, easy-to-design, and
efficient linear regulation between the multiple supply
voltages often present in processor intensive
systems.
Figure 28 illustrates a typical application circuit for the
TPS74401 adjustable output device.
R
and R
1
can be calculated for any output voltage output capacitance. With a solid input supply, adding
2
using the formula shown in Figure 28 . Refer to additional output capacitance reduces undershoot
Table 1 for sample resistor values of common output and overshoot during a transient at the expense of a
voltages. In order to achieve the maximum accuracy slightly longer V
specifications, R
should be ≤ 4.99k Ω . in the Typical Characteristics section. Since the
2
INPUT, OUTPUT, AND BIAS CAPACITOR
REQUIREMENTS
stable with multiple capacitors in parallel, of any type
or value.
and V
capacitor for V
BIAS
is 1 µ F. If V
BIAS
and V
IN
are connected to
BIAS
is 4.7 µ F. Good quality, low ESR
capacitors should be used on the input; ceramic X5R
and X7R capacitors are preferred. These capacitors
should be placed as close the pins as possible for
optimum performance.
TRANSIENT RESPONSE
The TPS74401 was designed to have transient
response within 5% for most applications without any
output capacitor. In some cases, the transient
response may be limited by the transient response of
the input supply. This limitation is especially true in
applications where the difference between the input
and output is less than 300mV. In this case, adding
additional input capacitance improves the transient
response much more than just adding additional
recovery time. Refer to Figure 22
OUT
TPS74401 is stable without an output capacitor,
many applications may allow for little or no
capacitance at the LDO output. For these
applications, local bypass capacitance for the device
under power may be sufficient to meet the transient
requirements of the application. This design reduces
the total solution cost by avoiding the need to use
expensive high-value capacitors at the LDO output.
IN
Figure 28. Typical Application Circuit for the
TPS74401 (Adjustable)
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 11
Product Folder Link(s): TPS74401
Reference
SimplifiedBlock Diagram
BIAS
FB
IN
V
IN
V =3.3V 5%
BIAS
±
V =3.3V 5%
V =1.5V
I =1.5A
Efficiency=45%
IN
OUT
OUT
±
V
OUT
OUT
Reference
SimplifiedBlock Diagram
V
OUT
OUT
BIAS
FB
IN
V =5V 5%
BIAS
±
V =1.8V
V =1.5V
I =1.5A
Efficiency=83%
IN
OUT
OUT
t
SS
+
ǒ
V
REF
C
SS
Ǔ
I
SS
t
SSCL
+
ǒ
V
OUT(NOM
)
C
OUT
Ǔ
I
CL(MIN
)
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
DROPOUT VOLTAGE
The TPS74401 offers industry-leading dropout
performance, making it well-suited for high-current
low VIN/low V
dropout of the TPS74401 allows the device to be
used in place of a DC/DC converter and still achieve
good efficiencies. This efficiency allows users to
rethink the power architecture for their applications to
achieve the smallest, simplest, and lowest cost
solution.
There are two different specifications for dropout
voltage with the TPS74401. The first specification
(see Figure 29 ) is referred to as V
for users that wish to apply an external bias voltage
to achieve low dropout. This specification assumes
that V
case for V
is at least 1.62V above V
BIAS
BIAS
tolerance and with V
3.3V × 0.95 or V
less than specified.
Figure 29. Typical Application of the TPS74401
Using an Auxiliary Bias Rail
applications. The extremely low
OUT
Dropout and is
IN
, which is the Figure 30. Typical Application of the TPS74401
OUT
when powered by a 3.3V rail with 5%
= 1.5V. If V
OUT
is less than 1.5V, V
OUT
is higher than
BIAS
dropout is
IN
Without an Auxiliary Bias
PROGRAMMABLE SOFT-START
The TPS74401 features a programmable, monotonic,
voltage-controlled soft-start that is set with an
external capacitor (C
many applications because it eliminates power-up
initialization problems when powering FPGAs, DSPs,
or other processors. The controlled voltage ramp of
the output also reduces peak inrush current during
start-up, minimizing start-up transients to the input
power bus.
To achieve a linear and monotonic soft-start, the
TPS74401 error amplifier tracks the voltage ramp of
the external soft-start capacitor until the voltage
exceeds the internal reference. The soft-start ramp
time depends on the soft-start charging current (I
the soft-start capacitance (C
reference voltage (V
Equation 1 :
). This feature is important for
SS
), and the internal
), and can be calculated using
REF
SS
),
SS
The second specification (see Figure 30 ) is referred
to as V
and BIAS together. This option allows the device to
be used in applications where an auxiliary bias
voltage is not available or low dropout is not required.
Dropout is limited by BIAS in these applications
because V
FET and therefore must be 1.62V above V
Because of this usage, IN and BIAS tied together
easily consume huge power. Pay attention not to
exceed the power rating of the IC package.
12 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Dropout and is for users that wish to tie IN
BIAS
provides the gate drive to the pass
BIAS
OUT
Product Folder Link(s): TPS74401
If large output capacitors are used, the device current
limit (I
) and the output capacitor may set the
CL
start-up time. In this case, the start-up time is given
by Equation 2 :
.
V
OUT(NOM)
the user, C
is the nominal set output voltage as set by
is the output capacitance, and I
OUT
is the minimum current limit for the device. In
applications where monotonic startup is required, the
soft-start time given by Equation 1 should be set to
be greater than Equation 2 .
(1)
(2)
CL(MIN)
V
N
ǒ
m V
RMS
Ǔ
+ 16
ǒ
m V
RMS
V
Ǔ
V
OUT
(V)
TPS74401
GND
SS
OUT
FB
EN
IN
BIAS
V
IN
V
OUT
R
2
R
1
C
SS
C
IN
1 Fm
C
V
BIAS
C
BIAS
1 Fm
R
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
The maximum recommended soft-start capacitor is
0.015 µ F. Larger soft-start capacitors can be used and
will not damage the device; however, the soft-start
capacitor discharge circuit may not be able to fully
discharge the soft-start capacitor when re-enabled.
Soft-start capacitors larger than 0.015 µ F could be a
problem in applications where the user needs to
rapidly pulse the enable pin and still requires the
device to soft-start from ground. C
must be
SS
low-leakage; X7R, X5R, or C0G dielectric materials
are preferred. Refer to Table 2 for suggested
soft-start capacitor values.
OUTPUT NOISE
The TPS74401 provides low output noise when a
soft-start capacitor is used. When the device reaches
the end of the soft-start cycle, the soft-start capacitor
serves as a filter for the internal reference. By using a
0.001 µ F soft-start capacitor, the output noise is
reduced by half and is typically 19 µ V
output (100Hz to 100kHz). Because most of the
output noise is generated by the internal reference,
the noise is a function of the set output voltage. The
RMS noise with a 0.001 µ F soft-start capacitor is
given in Equation 3 .
RMS
SEQUENCING REQUIREMENTS
The device can have V
in any order without causing damage to the device.
However, for the soft-start function to work as
intended, certain sequencing rules must be applied.
Enabling the device after V
preferred, and can be accomplished using a digital
output from a processor or supply supervisor. An
analog signal from an external RC circuit, as shown
in Figure 31 , can also be used as long as the delay
time is long enough for V
Figure 31. Soft-Start Delay Using an RC Circuit on
If a signal is not available to enable the device after
IN and BIAS, simply connecting EN to IN is
acceptable for most applications as long as V
greater than 1.1V and the ramp rate of V
is faster the set soft-start ramp rate. If the ramp rate
of the input sources is slower than the set soft-start
time, the output will track the slower supply minus the
dropout voltage until it reaches the set output voltage.
If EN is connected to BIAS, the device will soft-start
as programmed provided that V
V
. If V
BIAS
and V
BIAS
applied and the set soft-start time has expired then
V
will track VIN.
OUT
NOTE: When V
BIAS
not supplied, this device outputs approximately 50 µ A
of current from OUT. Although this condition will not
cause any damage to the device, the output current
may charge up the OUT node if total resistance
between OUT and GND (including external feedback
resistors) is less than 10k Ω .
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 13
, V
IN
BIAS
and V
IN
and V
IN
Enable
are present before V
EN
and V
are present and V
EN
, and V
BIAS
IN
EN
are present is
BIAS
to be present.
is present before
sequenced
IN
and V
IN
IN
Product Folder Link(s): TPS74401
The low output noise of the TPS74401 makes it a
good choice for powering transceivers, PLLs, or other
noise-sensitive circuitry.
ENABLE/SHUTDOWN
The enable (EN) pin is active high and is compatible
with standard digital signaling levels. V
turns the regulator off, while V
EN
EN
above 1.1V turns the
regulator on. Unlike many regulators, the enable
circuitry has hysteresis and deglitching for use with
relatively slow-ramping analog signals. This
configuration allows the TPS74401 to be enabled by
connecting the output of another supply to the EN
pin. The enable circuitry typically has 50mV of
hysteresis and a deglitch circuit to help avoid on-off
cycling because of small glitches in the V
The enable threshold is typically 0.8V and varies with
temperature and process variations. Temperature
variation is approximately – 1mV/ ° C; therefore,
process variation accounts for most of the variation in
the enable threshold. If precise turn-on timing is
required, a fast rise-time signal should be used to
enable the TPS74401.
is
BIAS
If not used, EN can be connected to either IN or
BIAS. If EN is connected to IN, it should be
connected as close as possible to the largest
capacitance on the input to prevent voltage droops on
that line from triggering the enable circuit.
POWER-GOOD (QFN Package Only)
is
is
IN
The power-good (PG) pin is an open-drain output and
can be connected to any 5.5V or lower rail through an
external pull-up resistor. This pin requires at least
1.1V on V
output is high-impedance when V
V
+ V
IT
HYS
in order to have a valid output. The PG
BIAS
. If V
drops below V
OUT
OUT
IT
is greater than
or if V
below 1.9V, the open-drain output turns on and pulls
the PG output low. The PG pin also asserts when the
device is disabled. The recommended operating
condition of PG pin sink current is up to 1mA, so the
for a 1.2V
(3)
below 0.4V
signal.
EN
drops
BIAS
P
D
+
ǒ
VIN* V
OUT
Ǔ
I
OUT
R
q JA
+
ǒ
)125° C * T
A
Ǔ
P
D
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
pull-up resistor for PG should be in the range of 10k Ω
LAYOUT RECOMMENDATIONS AND POWER
to 1M Ω . The pull-up resistor for PG should be in the DISSIPATION
range of 10k Ω to 1M Ω . PG is only provided on the
QFN package. If output voltage monitoring is not
needed, the PG pin can be left floating.
INTERNAL CURRENT LIMIT
The TPS74401 features a factory-trimmed, accurate
current limit that is flat over temperature and supply
voltage. The current limit allows the device to supply
surges of up to 3.5A and maintain regulation. The
current limit responds in about 10 µ s to reduce the
current during a short-circuit fault. Recovery from a
short-circuit condition is well-controlled and results in
very little output overshoot when the load is removed.
See Figure 27 in the Typical Characteristics section
for short-circuit recovery performance.
The internal current limit protection circuitry of the
TPS74401 is designed to protect against overload
conditions. It is not intended to allow operation above
the rated current of the device. Continuously running
the TPS74401 above the rated current degrades
device reliability.
An optimal layout can greatly improve transient
performance, PSRR, and noise. To minimize the
voltage droop on the input of the device during load
transients, the capacitance on IN and BIAS should be
connected as close as possible to the device. This
capacitance also minimizes the effects of parasitic
inductance and resistance of the input source and
can therefore improve stability. To achieve optimal
transient performance and accuracy, the top side of
R
in Figure 28 should be connected as close as
1
possible to the load. If BIAS is connected to IN, it is
recommended to connect BIAS as close to the sense
point of the input supply as possible. This connection
minimizes the voltage droop on BIAS during transient
conditions and can improve the turn-on response.
Knowing the device power dissipation and proper
sizing of the thermal plane that is connected to the
tab or pad is critical to avoiding thermal shutdown
and ensuring reliable operation. Power dissipation of
the device depends on input voltage and load
conditions, and can be calculated using Equation 4 :
THERMAL PROTECTION
Thermal protection disables the output when the
junction temperature rises to approximately +155 ° C,
allowing the device to cool. When the junction
temperature cools to approximately +140 ° C, the
output circuitry is enabled. Depending on power On both the QFN (RGW) and DDPAK (KTW)
dissipation, thermal resistance, and ambient packages, the primary conduction path for heat is
temperature the thermal protection circuit may cycle through the exposed pad or tab to the printed circuit
on and off. This cycling limits the dissipation of the board (PCB). The pad or tab can be connected to
regulator, protecting it from damage as a result of ground or be left floating; however, it should be
overheating. attached to an appropriate amount of copper PCB
Activation of the thermal protection circuit indicates
excessive power dissipation or inadequate
heatsinking. For reliable operation, junction
temperature should be limited to +125 ° C maximum.
To estimate the margin of safety in a complete design
(including heatsink), increase the ambient
temperature until thermal protection is triggered; use
worst-case loads and signal conditions. For good
reliability, thermal protection should trigger at least
+30 ° C above the maximum expected ambient
condition of the application. This condition produces a
worst-case junction temperature of +125 ° C at the
highest expected ambient temperature and
worst-case load.
The internal protection circuitry of the TPS74401 is
designed to protect against overload conditions. It is
not intended to replace proper heatsinking.
Continuously running the TPS74401 into thermal
shutdown degrades device reliability.
Power dissipation can be minimized and greater
efficiency can be achieved by using the lowest
possible input voltage necessary to achieve the
required output voltage regulation.
area to ensure the device does not overheat. The
maximum junction-to-ambient thermal resistance
depends on the maximum ambient temperature,
maximum device junction temperature, and power
dissipation of the device, and can be calculated using
Equation 5 :
Knowing the maximum R
and system air flow, the
θ JA
minimum amount of PCB copper area needed for
appropriate heatsinking can be calculated using
Figure 32 through Figure 36 .
(4)
(5)
14 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS74401
55
50
45
40
35
30
25
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
q
JA
(
° C/W)
Area(in )
2
4.5
0LFM
150LFM
250LFM
T
J
R
q JC
R
q CS
R
q SA
T
C
T
S
T
A
4-layer.0.062” FR4
Viasare0.012” diameter,plated
Top/Bottomlayersare2oz.copper
Innerlayersare1oz.copper
0.062in.
R
q JA
= R +R +R
q q q JC C S SA
PCBCrossSection
PCBTopView
0.5in
2
1.0in
2
2.0in
2
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
Figure 32. PCB Layout and Corresponding R
Data, Buried Thermal Plane, No Vias Under Thermal Pad
θ JA
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 15
Product Folder Link(s): TPS74401
T
J
R
q JC
R
q CS
R
q SA
T
C
T
S
T
A
4-layer.0.062” FR4
Viasare0.012” diameter,plated
Top/Bottomlayersare2oz.copper
Innerlayersare1oz.copper
0.062in.
R
q JA
= R +R +R
q q q JC C S SA
50
45
40
35
30
25
20
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
q
JA
(° C/W)
Area(in )
2
4.0
0LFM
150LFM
250LFM
PCBCrossSection
PCBTopView
0.5in
2
1.0in
2
2.0in
2
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
Figure 33. PCB Layout and Corresponding R
Data, Buried Thermal Plane, Vias Under Thermal Pad
θ JA
16 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS74401
4-layer.0.062” FR4
Viasare0.012” diameter,plated
Top/Bottomlayersare2oz.copper
Innerlayersare1oz.copper
T
J
R
q JC
R
q CS
R
q SA
T
C
T
S
T
A
0.062in.
R
q JA
= R +R +R
q q q JC CS SA
90
80
70
60
50
40
30
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
q
JA
(° C/W)
Area(in )
2
4.0
0LFM
150LFM
250LFM
PCBCrossSection
PCBTopView
0.5in
2
1.0in
2
2.0in
2
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
Figure 34. PCB Layout and Corresponding R
Data, Top Layer Thermal Plane
θ JA
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 17
Product Folder Link(s): TPS74401
35
30
25
20
15
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
q
JA
(° C/W)
Area(in )
2
4.0
0LFM
T
J
R
q JC
R
q CS
R
q SA
T
C
T
S
T
A
4-layer.0.062” FR4
Viasare0.012” diameter,plated
Top/Bottomlayersare2oz.copper
Innerlayersare1oz.copper
0.062in.
R
q JA
= R +R +R
q q q JC CS SA
PCBCrossSection
PCBTopView
0.5in
2
1.0in
2
2.0in
2
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
Figure 35. PCB Layout and Corresponding R
, Buried Thermal Plane
θ JA
18 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS74401
4-layer.0.062” FR4
Viasare0.012” diameter,plated
Top/Bottomlayersare2oz.copper
Innerlayersare1oz.copper
T
J
R
q JC
R
q CS
R
q SA
T
C
T
S
T
A
0.062in.
R
q JA
= R +R +R
q q q JC C S SA
55
50
45
40
35
30
25
20
15
10
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
q
JA
(° C/W)
Area(in )
2
4.5
0LFM
PCBCrossSection
PCBTopView
0.5in
2
1.0in
2
2.0in
2
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
Figure 36. PCB Layout and Corresponding R
, Top Layer Thermal Plane
θ JA
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 19
Product Folder Link(s): TPS74401
PACKAGE OPTION ADDENDUM
www.ti.com
18-Mar-2008
PACKAGING INFORMATION
Orderable Device Status
(1)
Package
Type
Package
Drawing
Pins Package
Qty
Eco Plan
TPS74401KTWR ACTIVE DDPAK KTW 7 500 Green (RoHS &
no Sb/Br)
TPS74401KTWRG3 ACTIVE DDPAK KTW 7 500 Green (RoHS &
no Sb/Br)
TPS74401KTWT ACTIVE DDPAK KTW 7 50 Green (RoHS &
no Sb/Br)
TPS74401KTWTG3 ACTIVE DDPAK KTW 7 50 Green (RoHS &
no Sb/Br)
TPS74401RGWR ACTIVE QFN RGW 20 3000 Green (RoHS &
no Sb/Br)
TPS74401RGWRG4 ACTIVE QFN RGW 20 3000 Green (RoHS &
no Sb/Br)
TPS74401RGWT ACTIVE QFN RGW 20 250 Green (RoHS &
no Sb/Br)
TPS74401RGWTG4 ACTIVE QFN RGW 20 250 Green (RoHS &
no Sb/Br)
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Lead/Ball Finish MSL Peak Temp
CU SN Level-3-245C-168 HR
CU SN Level-3-245C-168 HR
CU SN Level-3-245C-168 HR
CU SN Level-3-245C-168 HR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
(3)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer: The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
TAPE AND REEL INFORMATION
18-Mar-2008
*All dimensions are nominal
Device Package
TPS74401KTWR DDPAK KTW 7 500 330.0 24.4 10.6 15.6 4.9 16.0 24.0 Q2
TPS74401KTWT DDPAK KTW 7 50 330.0 24.4 10.6 15.6 4.9 16.0 24.0 Q2
TPS74401RGWR QFN RGW 20 3000 330.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2
TPS74401RGWT QFN RGW 20 250 180.0 12.4 5.3 5.3 1.5 8.0 12.0 Q2
Type
Package
Drawing
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1
(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
18-Mar-2008
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPS74401KTWR DDPAK KTW 7 500 346.0 346.0 41.0
TPS74401KTWT DDPAK KTW 7 50 346.0 346.0 41.0
TPS74401RGWR QFN RGW 20 3000 346.0 346.0 29.0
TPS74401RGWT QFN RGW 20 250 190.5 212.7 31.8
Pack Materials-Page 2
MECHANICAL DATA
MPSF015 – AUGUST 2001
KTW (R-PSFM-G7) PLASTIC FLANGE-MOUNT
0.0625 (1,587)
0.0585 (1,485)
H
0.605 (15,37)
0.595 (15,11)
H
0.370 (9,40)
0.330 (8,38)
C
C
0.410 (10,41)
0.385 (9,78)
0.303 (7,70)
0.297 (7,54)
0.050 (1,27)
0.034 (0,86)
F
0.022 (0,57)
0.010 (0,25)
–A–
0.055 (1,40)
0.045 (1,14)
A
0.012 (0,305)
0.000 (0,00)
0.019 (0,48)
0.017 (0,43)
0.026 (0,66)
C
0.014 (0,36)
B
A
M
M
C
M
0.006
–B–
0.104 (2,64)
0.096 (2,44)
0.064 (1,63)
0.056 (1,42)
0.187 (4,75)
0.179 (4,55)
H
0° ~3°
0.304 (7,72)
0.296 (7,52)
0.300 (7,62)
0.252 (6,40)
0.183 (4,65)
0.170 (4,32)
NOTES: A. All linear dimensions are in inches (millimeters).
B. This drawing is subject to change without notice.
C. Lead width and height dimensions apply to the
plated lead.
D. Leads are not allowed above the Datum B.
E. Stand–off height is measured from lead tip
with reference to Datum B.
F. Lead width dimension does not include dambar
protrusion. Allowable dambar protrusion shall not
cause the lead width to exceed the maximum
dimension by more than 0.003”.
G. Cross–hatch indicates exposed metal surface.
H. Falls within JEDEC MO–169 with the exception
of the dimensions indicated.
4201284/A 08/01
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