TEXAS INSTRUMENTS TPS74401 Technical data

TPS74401
TPS74401
GND
EN
FB
IN PG
SS
OUT
V
IN
V
OUT
V
PG
R
1
R
2
R
3
C
OUT
Optional
C
IN
1 Fm
C
SS
V
BIAS
C
BIAS
1 Fm
BIAS
1V/div
500mV/div
Time(1ms/div)
C =0 FSSm
C =0.001 FSSm
C =0.0047 FSSm
V
OUT
V
EN
0V
1.1V
TPS74401
www.ti.com
3.0A Ultra-LDO with Programmable Soft-Start
1

FEATURES

2
Soft-Start (SS) Pin Provides a Linear Startup
with Ramp Time Set by External Capacitor
1% Accuracy Over Line, Load, and
Temperature
Supports Input Voltages as Low as 0.9V with
External Bias Supply
Adjustable Output (0.8V to 3.6V)
Ultra-Low Dropout: 115mV at 3.0A (typ)
Stable with Any or No Output Capacitor
Excellent Transient Response
Available in 5mm × 5mm × 1mm QFN and
DDPAK-7 Packages
Open-Drain Power-Good (QFN only)
Active High Enable

APPLICATIONS

FPGA Applications
DSP Core and I/O Voltages
Post-Regulation Applications
Applications with Special Start-Up Time or
Sequencing Requirements
Hot-Swap and Inrush Controls
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008

DESCRIPTION

The TPS74401 low-dropout (LDO) linear regulator provides an easy-to-use robust power management solution for a wide variety of applications. User-programmable soft-start minimizes stress on the input power source by reducing capacitive inrush current on start-up. The soft-start is monotonic and well-suited for powering many different types of processors and ASICs. The enable input and power-good output allow easy sequencing with external regulators. This complete flexibility permits the user to configure a solution that will meet the sequencing requirements of FPGAs, DSPs, and other applications with specific start-up requirements.
A precision reference and error amplifier deliver 1% accuracy over load, line, temperature, and process. Each LDO is stable with low-cost ceramic output capacitors and the device is fully specified from – 40 ° C to +125 ° C. The TPS74401 is offered in a small (5mm × 5mm) QFN package, yielding a highly compact total solution size. For applications that require additional power dissipation, the DDPAK (KTW) package is also available.
Figure 1. Typical Application Circuit
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
2 All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Figure 2. Turn-On Response
Copyright © 2005 – 2008, Texas Instruments Incorporated
www.ti.com
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
ORDERING INFORMATION
PRODUCT V
TPS744 xxyyyz XX is nominal output voltage (for example, 12 = 1.2V, 15 = 1.5V, 01 = Adjustable).
(1)
(2)
OUT
(3)
YYY is package designator. Z is package quantity.
(1) For the most current package and ordering information see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com .
(2) Output voltages from 0.9V to 1.5V in 50mV increments and 1.5V to 3.6V in 100mV increments are available through the use of
innovative factory EEPROM programming; minimum order quantities may apply. Contact factory for details and availability.
(3) For fixed 0.8V operation, tie FB to OUT.

ABSOLUTE MAXIMUM RATINGS

(1)
At TJ= 40 ° C to +125 ° C, unless otherwise noted. All voltages are with respect to GND.
TPS74401 UNIT
VIN, V
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
Input voltage range – 0.3 to +6 V
BIAS
V
Enable voltage range – 0.3 to +6 V
EN
V
Power-good voltage range – 0.3 to +6 V
PG
IPGPG sink current 0 to +1.5 mA
V
SS pin voltage range – 0.3 to +6 V
SS
V
Feedback pin voltage range – 0.3 to +6 V
FB
V
Output voltage range – 0.3 to VIN+ 0.3 V
OUT
I
Maximum output current Internally limited
OUT
Output short circuit duration Indefinite
P
Continuous total power dissipation See Dissipation Ratings Table
DISS
TJOperating junction temperature range – 40 to +125 ° C
T
Storage junction temperature range – 55 to +150 ° C
STG

DISSIPATION RATINGS

PACKAGE θ
RGW (QFN)
KTW (DDPAK)
(1)
(2)
JA
36.5 ° C/W 4.05 ° C/W 2.74W 27.4mW/ ° C
18.8 ° C/W 2.32 ° C/W 5.32W 53.2mW/ ° C
θ
JC
(1) See Figure 33 for PCB layout description. (2) See Figure 36 for PCB layout description.
2 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS74401
TA< +25 ° C DERATING FACTOR
POWER RATING ABOVE TA= +25 ° C
www.ti.com
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008

ELECTRICAL CHARACTERISTICS

At V
= 1.1V, V
EN
unless otherwise noted. Typical values are at TJ= +25 ° C.
V
IN
V
BIAS
V
REF
V
OUT
V
/V
OUT
IN
V
/I
OUT
OUT
V
DO
ICLCurrent limit A
I
BIAS
I
SHDN
IFBFeedback pin current
(4)
PSRR
Noise Output noise voltage 16 × V
V
TRAN
t
STR
ISSSoft-start charging current V
V
EN, HI
V
EN, LO
V
EN, HYS
V
EN, DG
IENEnable pin current V V
IT
V
HYS
V
PG, LO
I
PG, LKG
T
J
= V
OUT
+ 0.3V, C
IN
= C
IN
BIAS
= 0.1 µ F, C
OUT
= 10 µ F, I
OUT
= 50mA, V
BIAS
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Input voltage range V
OUT
Bias pin voltage range 2.375 5.25 V Internal reference (Adj.) TJ= +25 ° C 0.796 0.8 0.804 V Output voltage range VIN= 5V, I Accuracy
Line regulation %/V
Load regulation
VINdropout voltage
V
Bias pin current I Shutdown supply current
(V
Power-supply rejection (V
Power-supply rejection (V
(1)
2.97V V V
OUT (NOM)
V
OUT (NOM)
0mA I 50mA I I
= 3.0A, V
(2)
dropout voltage
BIAS
)
IN
(2)
(3)
OUT
I
= 3.0A, V
OUT
DDPAK I
= 3.0A, VIN= V
OUT
V
= 80% × V
OUT
V
= 80% × V
OUT
= 0mA to 3.0A 2 4 mA
OUT
V
0.4V 1 100 µ A
EN
I
= 50mA to 3.0A – 250 95 250 nA
OUT
1kHz, I
to V
IN
)
OUT
800kHz, I V
= 1.5V
OUT
1kHz, I
to V
BIAS
)
OUT
800kHz, I V
= 1.5V
OUT
100Hz to 100kHz, I C
= 0.001 µ F
SS
%V
droop during load
OUT
transient Minimum startup time I
I
= 100mA to 3.0A at 1A/ µ s, C
OUT
= 1.5A, C
OUT
= 0.4V 0.5 0.73 1 µ A
SS
= 1.5A, V
OUT
5.25V, 50mA I
BIAS
+ 0.3 V + 0.3 V
50mA 0.013 %/mA
OUT
3.0A 0.03 %/A
OUT
V
BIAS
V
BIAS
BIAS OUT (NOM) OUT (NOM)
= 1.5A, VIN= 1.8V, V
OUT
= 1.5A, VIN= 1.8V,
OUT
= 1.5A, VIN= 1.8V, V
OUT
= 1.5A, VIN= 1.8V,
OUT
OUT
= open 100 µ s
SS
= 5V V
BIAS
3.0A – 1 ± 0.2 +1 %
OUT
5.5V, QFN 0.0005 0.05
IN
5.5V, DDPAK 0.0005 0.06
IN
OUT (NOM) OUT (NOM)
1.62V, QFN 115 195 1.62V,
, QFN 3.8 6.0 , DDPAK 3.5 6.0
= 1.5V 73
OUT
= 1.5V 62
OUT
= 1.5A,
= 0 µ F 4 %V
OUT
Enable input high level 1.1 5.5 V Enable input low level 0 0.4 V Enable pin hysteresis 50 mV Enable pin deglitch time 20 µ s
= 5V 0.1 1 µ A
EN
PG trip threshold V
decreasing 86.5 90 93.5 %V
OUT
PG trip hysteresis 3 %V PG output low voltage IPG= 1mA (sinking), V PG leakage current V
PG
= 5.25V, V
OUT
Operating junction temperature
< V
OUT
IT
> V
IT
– 40 +125 ° C
TPS74401
= 5.0V, and TJ= 40 ° C to +125 ° C,
TPS74401
+ V
DO
REF
120 240
42
50
OUT
0.03 1 µ A
5.5 V
3.6 V
1.62 V
0.3 V
mV
dB
dB
µ V
RMS
OUT
OUT OUT
(1) Adjustable devices tested at 0.8V; external resistor tolerance is not taken into account. (2) Dropout is defined as the voltage from the input to V (3) IFBcurrent flow is out of the device.
when V
OUT
is 2% below nominal.
OUT
(4) See Figure 10 to Figure 13 for PSRR at different conditions.
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 3
Product Folder Link(s): TPS74401
www.ti.com
Thermal
Limit
Soft-Start
Discharge
OUT
V
OUT
FB
PG
IN
BIAS
SS
EN
Hysteresis
andDe-Glitch
Current
Limit
UVLO
0.73 Am
0.8V Reference
0.9 ´ V
REF
GND
C
SS
R
1
R
2
V =0.8x( )
OUT
1+
R
1
R
2
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
ELECTRICAL CHARACTERISTICS (continued)
At V
= 1.1V, V
EN
unless otherwise noted. Typical values are at TJ= +25 ° C.
T
SD
= V
OUT
+ 0.3V, C
IN
= C
IN
BIAS
= 0.1 µ F, C
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
Thermal shutdown temperature
Shutdown, temperature increasing +155 Reset, temperature decreasing +140

BLOCK DIAGRAM

OUT
= 10 µ F, I
OUT
= 50mA, V
= 5.0V, and TJ= 40 ° C to +125 ° C,
BIAS
TPS74401
° C
Table 1. Standard 1% Resistor Values for Programming the Output Voltage
R1(k ) R2(k ) V
(1)
(V)
OUT
Short Open 0.8
0.619 4.99 0.9
1.13 4.53 1.0
1.37 4.42 1.05
1.87 4.99 1.1
2.49 4.99 1.2
4.12 4.75 1.5
3.57 2.87 1.8
3.57 1.69 2.5
3.57 1.15 3.3
(1) V
= 0.8 × (1 + R1/R2)
OUT
4 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Product Folder Link(s): TPS74401
www.ti.com
5 5QFN(RGW)´
Package TopView¾
IN
IN
IN
PG
BIAS
OUT
OUT
OUT
NC
FB
TPS74401
IN
EN
11
GND
12
NC
13
NC
14
SS
15
6
7
8
9
10
20
19
18
17
16
5
NC4
NC3
NC2
OUT1
GND
7-Lead
DDPAK(KTW)
Surface-Mount
OUT
GND
BIAS
IN
FB
SS
1 2 3 4
5
6EN7
Table 2. Standard Capacitor Values for Programming the Soft-Start Time
(1) tSS(s) = 0.8 × CSS(F)/7.3 × 10
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
C
SS
SOFT-START TIME
Open 0.1ms
470pF 0.5ms 1000pF 1ms 4700pF 5ms
0.01 µ F 10ms
0.015 µ F 16ms
– 7
TPS74401
(1)

PIN DESCRIPTIONS

NAME KTW (DDPAK) RGW (QFN) DESCRIPTION
IN 5 5 – 8 Unregulated input to the device. EN 7 11 SS 1 15 Soft-Start pin. A capacitor connected on this pin to ground sets the start-up
BIAS 6 10 Bias input voltage for error amplifier, reference, and internal control circuits.
PG N/A 9 low-impedance state. A pull-up resistor from 10k to 1M should be connected
FB 2 16
OUT 3 1, 18 – 20 Regulated output voltage. No capacitor is required on this pin for stability.
NC N/A 2 – 4, 13, 14, 17
GND 4 12 Ground
PAD/TAB Should be soldered to the ground plane for increased thermal performance.
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 5
Enable pin. Driving this pin high enables the regulator. Driving this pin low puts the regulator into shutdown mode. This pin must not be left floating.
time. If this pin is left floating, the regulator output soft-start ramp time is typically 100 µ s.
Power-Good (PG) is an open-drain, active-high output that indicates the status of V
. When V
OUT
high-impedance state. When V
exceeds the PG trip threshold, the PG pin goes into a
OUT
is below this threshold the pin is driven to a
OUT
from this pin to a supply up to 5.5V. The supply can be higher than the input voltage. Alternatively, the PG pin can be left floating if output monitoring is not necessary.
This pin is the feedback connection to the center tap of an external resistor divider network that sets the output voltage. This pin must not be left floating.
No connection. This pin can be left floating or connected to GND to allow better thermal contact to the top-side plane.
Product Folder Link(s): TPS74401
www.ti.com
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-0.1 0
10 20 30 40
ChangeinV (%)
OUT
I (mA)
OUT
50
+125 C°
+25 C°
-40 C°
ReferredtoI =50mA
OUT
0.050
0.025
0
-0.025
-0.050
-0.075
-0.100
-0.125
-0.150
50
500 1000 1500 2000 2500
ChangeinV (%)
OUT
I (mA)
OUT
3000
+125 C°
+25 C°
- °40 C
ReferredtoI =50mA
OUT
0.05
0.04
0.03
0.02
0.01
0
-0.01
-0.02
-0.03
-0.04
-0.05
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
ChangeinV (%)
OUT
V V-
IN OUT
(V)
4.5
T = 40- °JC
TJ=+25°C
TJ=+125°C
0
500 1000 1500 2000 2500
I (mA)
OUT
3000
200
150
100
50
0
DropoutV
oltage(mV)
+125 C°
+25 C°
- °40 C
300
250
200
150
100
50
0
0.9
1.4 1.9 2.4 2.9 3.4
DropoutV
oltage(mV)
V V-
BIAS OUT
(V)
3.9
+125 C°
+25 C°
- °40 C
I =3.0A
OUT
200
180
160
140
120
100
80
60
40
20
0
0.9
1.4 1.9 2.4 2.9 3.4
DropoutVoltage(mV)
V V-
BIAS OUT
(V)
3.9
+125 C°
+25 C°
-40°C
I =1.5A
OUT
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
At TJ= +25 ° C, V
OUT
= 1.5V, V
= V
IN
LOAD REGULATION LOAD REGULATION
Figure 3. Figure 4.

TYPICAL CHARACTERISTICS

OUT(TYP)
+ 0.3V, V
C
= 10 µ F, unless otherwise noted.
OUT
BIAS
= 3.3V, I
OUT
= 50mA, C
IN
= 1 µ F, C
= 1 µ F, C
BIAS
SS
= 0.01 µ F, and
LINE REGULATION I
AND TEMPERATURE (TJ)
OUT
Figure 5. Figure 6.
VINDROPOUT VOLTAGE vs VINDROPOUT VOLTAGE vs
V
V
VINDROPOUT VOLTAGE vs
BIAS
AND TEMPERATURE (TJ) V
OUT
V
BIAS
AND TEMPERATURE (TJ)
OUT
6 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Figure 7. Figure 8.
Product Folder Link(s): TPS74401
www.ti.com
1400
1300
1200
1100
1000
900
800
700
600
500
0
500 1000 1500 2000 2500
DropoutVoltage(mV)
I (mA)
OUT
3000
+125 C°
+25 C°
-40 C°
V =V
IN BIAS
80
70
60
50
40
30
20
10
0
10
100 1k 10k 100k 1M
Power-SupplyRejectionRatio(dB)
Frequency(Hz)
10M
I =3.0A
OUT
100
90
80
70
60
50
40
30
20
10
0
10
100 1k 10k 100k 1M
Power
-SupplyRejectionRatio(dB)
Frequency(Hz)
10M
V =1.8,V =1.5V
IN OUT OUT
,I =1.5A
C =0 F
OUT
m
C =10 F
OUT
m
C =100 F
OUT
m
100
90
80
70
60
50
40
30
20
10
0
10
100 1k 10k 100k 1M
Power
-SupplyRejectionRatio(dB)
Frequency(Hz)
10M
V =1.8,V =1.5V
IN OUT OUT
,I =100mA
C =10 F
OUT
m
C =100 F
OUT
m
C =0 F
OUT
m
100
90
80
70
60
50
40
30
20
10
0
10
100 1k 10k 100k 1M
Power
-SupplyRejectionRatio(dB)
Frequency(Hz)
10M
V =1.8,V =1.5V
IN OUT OUT
,I =3A
C =100 F
OUT
m
C =0 F
OUT
m
C =10 F
OUT
m
90
80
70
60
50
40
30
20
10
0
0
0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25
Power-SupplyRejectionRatio(dB)
V V-
IN OUT
(V)
2.50
1kHz
100kHz
300kHz
700kHz
C =22 F I =1.5A
m
OUT
OUT
At TJ= +25 ° C, V C
= 10 µ F, unless otherwise noted.
OUT
TYPICAL CHARACTERISTICS (continued)
= 1.5V, V
OUT
V
BIAS
I
AND TEMPERATURE (TJ) V
OUT
= V
IN
OUT(TYP)
DROPOUT VOLTAGE vs
+ 0.3V, V
BIAS
= 3.3V, I
OUT
= 50mA, C
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
IN
= 1 µ F, C
BIAS
= 1 µ F, C
BIAS
SS
= 0.01 µ F, and
PSRR vs FREQUENCY
Figure 9. Figure 10.
VINPSRR vs FREQUENCY VINPSRR vs FREQUENCY
Figure 11. Figure 12.
VINPSRR vs FREQUENCY VINPSRR vs V
V
IN
OUT
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 7
Figure 13. Figure 14.
Product Folder Link(s): TPS74401
www.ti.com
1
0.1
0.01
100
1k 10k
OutputSpectralNoiseDensity(
mV/
Ö )Hz
Frequency(Hz)
100k
C =1nF
SS
C =0nF
SS
C =10nF
SS
I =3A
OUT
V =1.1V
OUT
1
0.1
0.01
100
1k 10k
OutputSpectralNoiseDensity( V/
)
m Ö
Hz
Frequency(Hz)
100k
V =3.3V
OUT
V =2.5V
OUT
V =1.5V
OUT
V =1.1V
OUT
V =0.8V
OUT
V :V +1.62V
BIAS OUT
I :3A
OUT
C :1 F(Ceramic)m
IN
C :1 F(Ceramic)m
OUT
R ,R :(seeTable1)
1 2
2.85
2.65
2.45
2.25
2.05
1.85
1.65
1.45
1.25 0
500 1000 1500 2000 2500
BiasCurrent(mA)
I (mA)
OUT
3000
+125 C°
+25 C°
- °40 C
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
2.0
2.5 3.0 3.5 4.0 4.5
BiasCurrent(mA)
V (V)
BIAS
5.0
T =J+125 C°
T =+25 C°
J
T =J- °40 C
0.45
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0
-40
-20 0 20 40 60 80 100
BiasCurrent( A)m
120
V =2.375V
BIAS
V =5.5V
BIAS
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
At TJ= +25 ° C, V C
= 10 µ F, unless otherwise noted.
OUT
OUT
= 1.5V, V
= V
IN
NOISE SPECTRAL DENSITY NOISE SPECTRAL DENSITY
Figure 15. Figure 16.
TYPICAL CHARACTERISTICS (continued)
OUT(TYP)
+ 0.3V, V
BIAS
= 3.3V, I
OUT
= 50mA, C
IN
= 1 µ F, C
= 1 µ F, C
BIAS
SS
= 0.01 µ F, and
I
vs I
BIAS
AND TEMPERATURE I
OUT
vs V
BIAS
AND V
BIAS
OUT
Figure 17. Figure 18.
I
SHUTDOWN vs TEMPERATURE
BIAS
8 Submit Documentation Feedback Copyright © 2005 – 2008, Texas Instruments Incorporated
Figure 19.
Product Folder Link(s): TPS74401
www.ti.com
765
750
735
720
705
690
675
-40
-20 0 20 40 60 80 100 120
I
(nA)
SS
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
V Low-LevelPGVoltage(V)
OL
0
2 4
6 8 10
12
PGCurrent(mA)
At TJ= +25 ° C, V C
= 10 µ F, unless otherwise noted.
OUT
OUT
= 1.5V, V
TYPICAL CHARACTERISTICS (continued)
= V
IN
OUT(TYP)
+ 0.3V, V
BIAS
= 3.3V, I
OUT
= 50mA, C
TPS74401
SBVS066H – DECEMBER 2005 – REVISED MARCH 2008
IN
= 1 µ F, C
= 1 µ F, C
BIAS
SS
= 0.01 µ F, and
SOFT-START CHARGING CURRENT (ISS)
vs TEMPERATURE LOW-LEVEL PG VOLTAGE vs PG CURRENT
Figure 20. Figure 21.
Copyright © 2005 – 2008, Texas Instruments Incorporated Submit Documentation Feedback 9
Product Folder Link(s): TPS74401
Loading...
+ 18 hidden pages