Integrated Power Management
\Audio Codec (TPS65930 Only)
Silicon Revision 1.2
Data Manual
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
The TPS65920/TPS65930 devices are power-management ICs for OMAP™ and other mobile
applications. The devices include power-management, a universal serial bus (USB) high-speed (HS)
transceiver, light -emitting diode (LED) drivers, an analog-to-digital converter (ADC), a real-time clock
(RTC), and embedded power control (EPC). In addition, the TPS65930 includes a full audio codec with
two digital-to-analog converters (DACs) and two ADCs to implement dual voice channels, and a stereo
downlink channel that can play all standard audio sample rates through a multiple format inter-integrated
sound (I2S™)/time division multiplexing (TDM) interface.
These optimized devices support the power and peripheral requirements of the OMAP application
processors. The power portion of the devices contains three buck converters, two controllable by a
dedicated SmartReflex™ class-3 interface, multiple low dropout (LDO) regulators, an EPC to manage the
power sequencing requirements of OMAP, and an RTC and backup module. The RTC can be powered by
a backup battery when the main supply is not present, and the devices include a coin-cell charger to
recharge the backup battery as needed.
The USB module provides a HS 2.0 OTG transceiver suitable for direct connection to the OMAP UTMI+
low pin interface (ULPI), with an integrated charge pump and full support for the carkit CEA-936A
specification. An ADC is provided for monitoring signals, such as supply voltage, entering the device, and
two additional external ADC inputs are provided for system use.
SWCS037G–MAY 2008– REVISED APRIL 2011
Integrated Power Management
\Audio Codec (TPS65930 Only)
Check for Samples: TPS65930/TPS65920
The devices provide driver circuitry to power two LED circuits that can illuminate a panel or provide user
indicators. The drivers also provide pulse width modulation (PWM) circuits to control the illumination levels
of the LEDs. A keypad interface implements a built-in scanning algorithm to decode hardware-based key
presses and reduce software use, with multiple additional general-purpose input/output devices (GPIOs)
that can be used as interrupts when configured as inputs.
This TPS65920/TPS65930 data manual presents the electrical and mechanical specifications for the
TPS65920 and TPS65930 devices. It covers the following topics:
•TPS65920/TPS65930 terminals: Assignment, multiplexing, electrical characteristics, and functional
description (see Section 2, Terminal Description)
•Electrical characteristic requirements: Maximum and recommended operating conditions, digital
input/output (I/O) characteristics (see Section 3, Electrical Characteristics)
•Power module: Power provider, power references, power control, power consumption, and power
management, with the on and off sequence (see Section 4, Power Module)
•RTC and EPC (see Section 5, Real-Time Clock and Embedded Power Controller)
•Audio/voice module (TPS65930 device only): Electrical characteristics and application schematics for
the downlink and uplink paths (see Section 6, Audio/Voice Module (TPS65930 Device Only))
•Various modules: USB transceiver, monitoring analog-to-digital converter (MADC), LED drivers, and
keyboard (see Section 8, MADC, Section 9, LED Driver, and Section 10, Keyboard)
•Clock specifications: Clock slicer; input and output clocks (see Section 11, Clock Specifications)
•Timing requirements and switching characteristics (ac timings) of the interfaces (see Section 12,
Timing Requirements and Switching Characteristics)
•Debouncing time (see Section 13, Debouncing Time)
•External components for the application schematics (see Section 14, External Components)
•Thermal resistance characteristics, device nomenclature, and mechanical data about the available
packaging (see Section 15, TPS65920/TPS65930 Package)
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Glossary of acronyms and abbreviations used in this data manual (see Section 16, Glossary)
1
1.1Features
The TPS65930 and TPS65920 devices offer the following features:
•Power:
– Three efficient stepdown converters
– Four external linear LDOs for clocks and peripherals
– SmartReflex dynamic voltage management
•Audio (TPS65930 device only):
– Differential input main microphones
– Mono auxiliary/FM input
– External predrivers for class D (stereo)
– TDM interface
– Automatic level control (ALC)
– Digital and analog mixing
– 16-bit linear audio stereo DAC (96, 48, 44.1, and 32 kHz and derivatives)
– 16-bit linear audio stereo ADC (48, 44.1, and 32 kHz and derivatives)
– Carkit
•USB:
– USB 2.0 on-the-go (OTG)-compliant HS transceivers
– 12-bit universal transceiver macro interface ULPI
– USB power supply (5-V charge pump for VBUS)
– Consumer Electronics Association (CEA)-2011: OTG transceiver interface specification
– CEA-936A: Mini-USB analog carkit specification
•Additional Features:
– LED driver circuit for two external LEDs
– Two external 10-bit MADC inputs
– Real-time clock (RTC) and retention modules
– HS I2C serial control
– Thermal shutdown and hot-die detection
– Keypad Interface (up to 6 × 6)
– External vibrator control
– 15 GPIOs
– 0.65 mm pitch, 139 pin, 10 × 10 mm package
•Charger:
– Backup battery charger
www.ti.com
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
PCHGACIM5M5PCHGACIGND
VPRECHPrecharge regulator outputON1N1VPRECHOCap to GND
VBATBattery voltage sensingPowerN5N5VBATPowerVBAT
GPIO0/CD1GPIO0/card detection 1I/O
JTAG.TDOJTAG test data outputI/O
GPIO1GPIO1I/O
JTAG.TMSJTAG test mode stateI
GPIO2GPIO2I/O
I2S.DOUTData transmit (audio port)OK3I2S.DOUTOFloating
MIC.MAIN.PMain microphone left input (P)ID1MIC.MAIN.PICap to GND
MIC.MAIN.MMain microphone left input (M)IE1MIC.MAIN.MICap to GND
VBAT.RIGHTBattery voltage inputPowerA10A10VBAT.RIGHTPowerVBAT
DN/USB data N/USB carkit transmitDN/UART3.TX
UART3.TXDdata/UART3 transmit dataD
IDUSB IDI/OG6G6IDI/O
UCLKHS USB clockIK11K11UCLKOFloating
STPHS USB stopI
GPIO9GPIO9I/O
DIRHS USB directionO
GPIO10GPIO10I/O
NXTHS USB nextO
GPIO11GPIO11I/O
DATA0HS USB Data0I/O
UART4.TXDUART4.TXDI
DATA1HS USB Data1I/O
UART4.RXDUART4.RXDO
DATA2HS USB Data2I/O
UART4.RTSIUART4.RTSII
DATA3HS USB Data3I/O
UART4.CTSOUART4.CTSOOG10G10DATA3OFloating
GPIO12GPIO12I/O
DATA4HS USB Data4I/O
GPIO14GPIO14I/O
DATA5HS USB Data5I/O
GPIO3GPIO3I/O
DATA6HS USB Data6I/O
GPIO4GPIO4I/O
DATA7HS USB Data7I/O
GPIO5GPIO5I/O
Analog microphone bias 1Power
Digital microphone power supply
(1) This column provides the connection when the associated feature is not used or not connected. When there is a pin muxing, not all
functions on the muxed pin are used. But even if a function is not used, the Default Configuration After Reset Released column still
applies.
Connection criteria:
–Analog pins:
–For input: GND
–For output: Floating (except VPRECH is connected to GND)
–For I/O if input by default: GND (except for audio features input: capacitor to ground with a 100-nF typical value capacitor)
–Digital pins:
–For input: GND (except keypad and STP are left floating)
–For input and pullup: Floating
–For output: Floating
–For I/O and pullup: Floating
N/A (not applicable): When the associated feature is mandatory for correct functioning of the TPS65920/TPS65930 device
(2) The signal VPRECH must be connected to the CPRECH capacitor to GND.
(3) Signal not functional indicates that no signal is presented on the pad after a release reset.
Main battery supply voltage
Voltage on any inputSupply represents the voltage applied to the0.01.0*SupplyV
Storage temperature range–55125°C
Ambient temperature range–4085°C
Junction temperature (TJ)At 1.4 W (Theta JB 11°C/W 2S2P board)105°C
Junction temperature (TJ) for parametric–40105°C
compliance
(1) The product has negligible reliability impact if voltage spikes of 5.2 V occur for a total duration of 10 milliseconds.
3.2Minimum Voltages and Associated Currents
Table 3-2 lists the VBAT minimum and maximum currents per VBAT ball.
Table 3-2. VBAT Minimum Required Per VBAT Ball and Associated Maximum Current
(1)
power supply pin associated with the input
2.14.5V
CategoryPin and ModuleMaximum CurrentOutput Voltage (V)VBAT Minimum (V)
This section describes the electrical characteristics of the voltage regulators and timing characteristics of
the supplies digitally controlled in the TPS65920 and TPS65930 devices.
Figure 4-1 is the power provider block diagram.
SWCS037G–MAY 2008– REVISED APRIL 2011
Two internal regulators, VRRTC and VBRTC, are not shown. VRRTC provides power to the RTC, and VBRTC is not
used in this configuration.
The VDD1 dc-dc regulator is a stepdown dc-dc converter with a configurable output voltage. The
programmingoftheoutputvoltageandthecharacteristicsofthedc-dcconverterare
SmartReflex-compatible. The regulator can be put in sleep mode to reduce its leakage (PFM) or in
power-down mode when it is not in use. Table 4-3 describes the regulator characteristics.
Table 4-2. Part Names With Corresponding VDD1 Current Support
Device NameVDD1 Current Support
TPS65920A2ZCH (some bug fixes, see errata)1.2 A
TPS65920A2ZCHR (some bug fixes, see errata)1.2 A
TPS65930A2ZCH (some bug fixes, see errata)1.2 A
TPS65930A2ZCHR (some bug fixes, see errata)1.2 A
Table 4-3. VDD1 dc-dc Regulator Characteristics
ParameterCommentsMinTypMaxUnit
Input voltage range2.73.64.5V
Output voltage0.61.45V
Output voltage stepCovering the 0.6-V to 1.45-V range12.5mV
Output accuracy
Switching frequency3.2MHz
Conversion efficiency
mode
Output current
Ground current (IQ)Off at 30°C3μA
Short-circuit currentVIN= V
Load regulation0 < IO< I
Transient load regulation
Line regulation10mV
Transient line regulation300 mVPPac input, 10-μs rise and fall time10mV
Start-up time0.251ms
Recovery timeFrom sleep mode to on mode with constant<10100μs
Slew rate (rising or falling)
Output shunt resistor (pulldown)500700Ω
External coilData capture record (DCR)0.1Ω
(1)
(2)
, Figure 4-2 in active
(3)
(4)
0.6 V to < 0.8 V–6%6%
0.8 V to 1.45 V–4%4%
IO= 10 mA, sleep82%
100 mA < IO< 400 mA85%
400 mA < IO< 600 mA80%
600 mA < IO< 800 mA75%
Active mode1.2A
Sleep mode10mA
Sleep, unloaded3050
Active, unloaded, not switching300
Max
Max
IO= 10 mA to (I
Maximum slew rate is I
load
Value0.711.3μH
Saturation current1.8A
/2) + 10 mA,
Max
/2/100 ns
Max
–6550mV
2.2A
20mV
4816mV/μs
(1) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process)
(2) VBAT = 3.8 V, VDD1 = 1.3 V, Fs = 3.2 MHz, L = 1 μH, L
(3) Output voltage must discharge the load current completely and settle to its final value within 100 μs.
(4) Load current varies proportionally with the output voltage. The slew rate is for increasing and decreasing voltages, and the maximum
The VDD2 dc-dc regulator is a programmable output stepdown dc-dc converter with an internal field effect
transistor (FET). Like the VDD1 regulator, the VDD2 regulator can be placed in sleep or power-down
mode and is SmartReflex-compatible. The VDD2 regulator differs from VDD1 in its current load capability.
Table 4-4 describes the regulator characteristics.
Table 4-4. VDD2 dc-dc Regulator Characteristics
ParameterCommentsMinTypMaxUnit
Input voltage range2.73.64.5V
Output voltage0.611.5V
Output voltage stepCovering the 0.6-V to 1.45-V range,12.5mV
Output accuracy
(1)
Switching frequency3.2MHz
Conversion efficiency
(2)
, Figure 4-4 in active mode
Output current
Ground current (IQ)Off at 30°C1μA
Short-circuit currentVIN= V
Load regulation0 < IO< I
Transient load regulation
(3)
Line regulation10mV
Transient line regulation300 mVPPac input, 10-μs rise and fall10mV
Output shunt resistor (internal pulldown)500700Ω
Start-up time0.251ms
Recovery timeFrom sleep mode to on mode with25100μs
Slew rate (rising or falling)
(4)
External coilDCR0.1Ω
External capacitor
(5)
(1) Accuracy includes all variations (line and load regulations, line and load transients, temperature, and process)
(2) VBAT = 3.8 V, VDD2 = 1.3 V, Fs = 3.2 MHz, L = 1 μH, L
(3) Output voltage needs to discharge the load current completely and settle to its final value within 100 μs.
(4) Load current varies proportionally with the output voltage. The slew rate is for both increasing and decreasing voltages and the
maximum load current is 600 mA.
(5) Under current load condition step:
Imax/2 (300 mA) in 100 ns with a ±20% external capacitor accuracy or
Imax/3 (200 mA) in 100 ns with a ±50% external capacitor accuracy
1.5 V is a single programmable value
0.6 V to < 0.8 V–6%6%
0.8 V to 1.5 V–4%4%
IO= 10 mA, sleep82%
100 mA < IO< 300 mA85%
300 mA < IO< 500 mA80%
Active mode600mA
Sleep mode10mA
Sleep, unloaded50
Active, unloaded, not switching300
Max
Max
IO= 10 mA to (I
Maximum slew rate is I
/2) + 10 mA,
Max
/2/100 ns
Max
–6550mV
1.2A
20mV
time
constant load
4816mV/μs
Value0.711.3μH
Saturation current900mA
Value81012μF
ESR at switching frequency020mΩ
The I/O and memory dc-dc regulator is a 600-mA stepdown dc-dc converter (internal FET) with two output
voltage settings. It supplies the memories and all I/O ports in the application and is one of the first power
providers to switch on in the power-up sequence. This dc-dc regulator can be placed in sleep or
power-down mode; however, care must be taken in the sequencing of this power provider, because
numerous ESD blocks are connected to this supply. Table 4-5 describes the regulator characteristics.
Table 4-5. VIO dc-dc Regulator Characteristics
ParameterCommentsMinTypMaxUnit
Input voltage range2.73.64.5V
Output voltage
Output accuracy
Switching frequency3.2MHz
Conversion efficiency
Output current
Ground current (IQ)Off at 30°C1μA
Load transient
Line transient300 mVPPac, input rise and fall time 10 μs10mV
Start-up time0.251ms
Recovery timeFrom sleep mode to on mode with constant<10100μs
Output shunt resistor (internal pulldown)500700Ω
External coilDCR0.1Ω
External capacitor
(1) This voltage is tuned according to the platform and transient requirements.
(2) ±4% accuracy includes all the variation (line and load regulation, line and load transient, temperature, process)
±3% accuracy is dc accuracy only.
(3) VBAT = 3.8 V, VIO = 1.8 V, Fs = 3.2 MHz, L = 1 μH, L
(4) Load transient can also be specified as 0 < IO< I
(1)
(2)
(3)
Figure 4-6 in active mode
(4)
IO= 10 mA, sleep85%
100 mA < IO< 400 mA85%
400 mA < IO< 600 mA80%
On mode700mA
Sleep mode10
Sleep, unloaded50
Active, unloaded, not switching300
load
Value0.711.3μH
Saturation current900mA
Value81012μF
ESR at switching frequency120mΩ
= 100 mΩ, C = 10 μF, ESR = 10 mΩ
DCR
/2, Δt = 1 μs, 100 mV but this is not included in ±4% accuracy.
The VDAC programmable LDO regulator is a high-PSRR, low-noise linear regulator that powers the host
processor dual-video DAC. It is controllable with registers through I2C and can be powered down.
Table 4-6 describes the regulator characteristics.
Table 4-6. VDAC LDO Regulator Characteristics
ParameterTest ConditionsMinTypMaxUnit
Output Load Conditions
Filtering capacitorConnected from VDAC.OUT to analog ground0.312.7μF
Filtering capacitor ESR20600mΩ
Electrical Characteristics
V
Input voltage2.73.64.5V
IN
V
Output voltageOn mode1.1641.21.236V
OUT
I
Rated output currentOn mode70mA
OUT
dc load regulationOn mode: 0 < IO< I
dc line regulationOn mode, VIN= V
Turn-on timeI
Wake-up timeFull load capability10μs
Ripple rejectionf < 20 kHz65dB
The VPLL1 programmable LDO regulator is a high-PSRR, low-noise, linear regulator used for the host
processor PLL supply. Table 4-7 describes the regulator characteristics.
Table 4-7. VPLL1 LDO Regulator Characteristics
ParameterTest ConditionsMinTypMaxUnit
Output Load Conditions
Filtering capacitorConnected from VPLL1.OUT to analog ground0.312.7μF
Filtering capacitor ESR20600mΩ
Electrical Characteristics
V
Input voltage2.73.64.5V
IN
V
Output voltageOn mode and low-power mode0.971.01.03V
OUT
I
Rated output currentOn mode40mA
OUT
dc load regulationOn mode: 0 < IO< I
dc line regulationOn mode, VIN= V
Turn-on timeI
Wake-up timeFull load capability10μs
Ripple rejectionf < 10 kHz50dB
The VMMC1 LDO regulator is a programmable linear voltage converter that powers the multimedia card
(MMC) slot. It includes a discharge resistor and overcurrent protection (short-circuit). This LDO regulator
can also be turned off automatically when MMC card extraction is detected. The VMMC1 LDO can be
powered through an independent supply other than the battery; for example, a charge pump. In this case,
the input from the VMMC1 LDO can be higher than the battery voltage. Table 4-8 describes the regulator
characteristics.
Table 4-8. VMMC1 LDO Regulator Characteristics
ParameterTest ConditionsMinTypMaxUnit
Output Load Conditions
Filtering capacitorConnected from VMMC1.OUT to analog ground0.312.7μF
Filtering capacitor ESR20600mΩ
Electrical Characteristics
V
Input voltage2.73.65.5V
IN
V
Output voltageOn mode and low-power modeV
OUT
I
Rated output currentmA
OUT
dc load regulationOn mode: 0 < IO< I
dc line regulationOn mode, VIN= V
Turn-on timeI
Wake-up timeFull load capability10μs
Ripple rejectiondB
Ground currentLow-power mode, I
V
Dropout voltageOn mode, I
DO
Transient load regulation–4040mV
Transient line regulation10mV
1.79451.85 1.9055
2.76452.85 2.9355
2.913.03.09
3.05553.15 3.2445
On mode220
Low-power mode5
Max
to V
INmin
= 0, CL= 1 μF (within 10% of V
OUT
INmax
at I
= I
OUT
OUTmax
)100μs
OUT
20mV
f < 10 kHz50
10 kHz < f < 100 kHz40
f = 1 MHz25
VIN= V
The charge pump generates a 4.8-V (nominal) power supply voltage from the battery to the VBUS pin.
The input voltage range is 2.7 to 4.5 V for the battery voltage. The charge pump operating frequency is
1 MHz.
The charge pump tolerates 7 V on VBUS when it is in power-down mode. The charge pump integrates a
short-circuit current limitation at 450 mA. Table 4-11 lists the charge pump output load conditions.
ParameterTest ConditionsMinTypMaxUnit
Output Load Conditions
Filtering capacitorConnected from VBUS to VSSP1.414.76.5μF
Flying capacitorConnected from CP to CN1.322.23.08μF
Filtering capacitor ESR20mΩ
The short-circuit current for the LDOs and dc-dcs in the TPS65920 and TPS65930 devices is
approximately twice the maximum load current. When the output of the block is shorted to ground, the
power dissipation can exceed the 1.2-W requirement if no action is taken. A short-circuit protection
scheme is included in the TPS65920 and TPS65930 devices to ensure that if the output of an LDO or
dc-dc is short-circuited, the power dissipation does not exceed the 1.2-W level.
The three USB LDOs, VRUSB3V1, VRUSB1V8, and VRUSB1V5, are included in this short-circuit
protection scheme, which monitors the LDO output voltage at a frequency of 1 Hz and generates an
interrupt (sc_it) when a short-circuit is detected.
The scheme compares the LDO output voltage to a reference voltage and detects a short-circuit if the
LDO voltage drops below this reference value (0.5 or 0.75 V programmable). In the case of the
VRUSB3V1 and VRUSB1V8 LDOs, the reference is compared with a divided down voltage (1.5 V typical).
If a short-circuit is detected on VRUSB3V1, the power subchip FSM switches this LDO to sleep mode.
If a short-circuit is detected on VRUSB1V8 or VRUSB1V5, the power subchip FSM switches off the
The bandgap voltage reference is filtered (resistance/capacitance [RC] filter) using an external capacitor
connected across the VREF output and an analog ground (REFGND). The VREF voltage is scaled,
distributed, and buffered in the device. The bandgap is started in fast mode (not filtered), and is set
automatically by the power state-machine in slow mode (filtered, less noisy) when required.
Table 4-12 lists the voltage reference characteristics.
Table 4-12. Voltage Reference Characteristics
ParameterTest ConditionsMinTypMaxUnit
Output Load Condition
Filtering capacitorConnected from V
Electrical Characteristics
VINInput voltageOn mode2.73.64.5V
Internal bandgap reference voltageOn mode, measured through TESTV terminal1.2721.2851.298V
Reference voltage (V
Retention mode referenceOn mode0.4920.50.508V
I
NMOS sink0.911.1μA
REF
Ground currentBandgap25μA
Output spot noise100 Hz1 μV/√Hz
A-weighted noise (rms)200nV (rms)
P-weighted noise (rms)150nV (rms)
Integrated noise20 to 100 kHz2.2μV
I
trim bit LSB0.1μA
BIAS
Ripple rejection<1 MHz from VBAT60dB
Start-up time1ms
terminal)On mode0.7490.750.77V
REF
I
block20
REF
Preregulator15
V
buffer10
REF
Retention reference buffer10
to GNDREF0.312.7μF
REF
4.3Power Control
4.3.1Backup Battery Charger
If the backup battery is rechargeable, it can be recharged from the main battery. A programmable voltage
regulator powered by the main battery allows recharging of the backup battery. The backup battery charge
must be enabled using a control bit register. Recharging starts when two conditions are met:
•Main battery voltage > backup battery voltage
•Main battery > 3.2 V
The comparators of the backup battery system (BBS) give the two thresholds of the backup battery charge
startup. The programmed voltage for the charger gives the end-of-charge threshold. The programmed
current for the charger gives the charge current.
Overcharging is prevented by measurement of the backup battery voltage through the GP ADC.
Table 4-13 lists the characteristics of the backup battery charger.
Table 4-14 lists the threshold levels of the battery.
Table 4-14. Battery Threshold Levels
ParameterTest ConditionsMinTypMaxUnit
Main battery charged thresholdMeasured on VBAT terminal3.13.23.3V
VMBCH
Main battery low threshold VMBLOVBACKUP = 3.2 V, measured on VBAT terminal (monitored2.552.72.85V
Main battery high threshold VMBHIMeasured on terminal VBAT, VBACKUP = 0 V2.52.652.95V
Batteries not present threshold VBNPR Measured on terminal VBACKUP with VBAT < 2.1 V1.61.82.0V
on terminal ONNOFF)
Measured on terminal VBAT, VBACKUP = 3.2 V2.52.852.95
Measured on terminal VBAT with VBACKUP = 0 V1.952.12.25
(monitored on terminal VRRTC)
4.3.3VRRTC LDO Regulator
The VRRTC voltage regulator is a programmable, low dropout, linear voltage regulator supplying (1.5 V)
the embedded real-time clock (32.768-kHz oscillator) and dedicated I/Os of the digital host counterpart.
The VRRTC regulator is also the supply voltage of the power-management digital state-machine. The
VRRTC regulator is supplied from the UPR line, switched on by the main or backup battery, depending on
the system state. The VRRTC output is present as long as a valid energy source is present. The VRRTC
line is supplied by an LDO when VBAT > 2.7, and a clamp circuit when in backup mode. Table 4-15
describes the regulator characteristics.
Table 4-15. VRRTC LDO Regulator Characteristics
ParameterTest ConditionsMinTypMaxUnit
Output Load Conditions
Filtering capacitorConnected from VRTC.OUT to analog ground0.312.7μF
Filtering capacitor ESR20600mΩ
DC load regulationOn mode: I
DC line regulationOn mode, VIN= V
Turn-on timeI
Wake-up timeOn mode from low power to On mode, I
Ripple rejection (VRRTC)f < 10 kHz50dB
Ground currentOn mode, I
Dropout voltage
(1)
Transient load regulationI
Transient line regulationVINdrops 500 mV10mV
OvershootSoftstart3%
Pull down resistanceDefault in off mode250320450Ω
SWCS037G–MAY 2008– REVISED APRIL 2011
Sleep mode1
= I
OUT
= 0, at V
OUT
V
OUT
= V
OUT
OUTfinal
± 3%
From backup to On mode, I
V
OUTfinal
± 3%
to 0100mV
OUTmax
INmin
= V
to V
OUTfinal
at I
INmax
OUT
= I
OUTmax
± 3%100μs
= 0, at100μs
OUT
OUT
= 0, at V
=100
OUT
100mV
10 kHz < f < 100 kHz40
f = 1 MHz30
VIN= V
On mode, I
Sleep mode, I
Sleep mode, I
+ 1 V, IO= I
OUT
OUT
OUT
OUT
OUT
MAX
= 070μA
= I
OUTmax
= 010
= 1 mA11
100
Off mode1
On mode, I
: I
LOAD
MIN
Slew: 40 mA/μs
OUT
– I
MAX
= I
OUTmax
250mV
–4040mV
Slew: 40 mV/μs
4.4Power Consumption
Table 4-16 describes the power consumption depending on the use cases.
NOTE
Typical power consumption is obtained in the nominal operating conditions and with the
TPS65920 and TPS65930 devices in stand-alone configuration.
Table 4-16. Power Consumption
ModeDescriptionTypical Consumption
Backupdomain. No main source is connected. Consumption is on the backupVBAT not present2.25 * 3.2 = 7.2 μW
Wait onVBAT = 3.8 V64 × 3.8 = 243.2 μW
Active no loadwith full current capability, internal reset is released, and the associatedVBAT = 3.8 V3291 × 3.8 = 12505 μW
Sleep no loadin low-consumption mode, and the associated processor is in low-powerVBAT = 3.8 V496 × 3.8 = 1884.4 μW
Only the RTC date is maintained with a couple of registers in the backup
battery.
The phone is apparently off for the user, a main battery is present and
well-charged. The RTC registers and registers in the backup domain are
maintained. The wake-up capabilities (such as the PWRON button) are
available.
The subsystem is powered by the main battery, all supplies are enabled
processor is running.
The main battery powers the subsystem, selected supplies are enabled but
mode.
Because of the internal frequency used by Power STM switching from 3 to 1.5 MHz when the HF clock
value is 19.2 MHz, if the HF clock value is not 19.2 MHz (with HFCLK_FREQ bit field values set
accordinglyintheCFG_BOOTregister),thedelaybetweenDEVOFFand
NRESPWRON/CLK32KOUT/SYSEN/HFCLKOUT is divided by two (approximately 9 μs).
The DEVOFF event is PWRON falling edge in slave mode and DEVOFF internal register write in master
mode.
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TPS65930/TPS65920
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5Real-Time Clock and Embedded Power Controller
The TPS65930 and TPS65920 devices contain an RTC to provide clock and timekeeping functions and an
EPC to provide battery supervision and control.
5.1RTC
The RTC provides the following basic functions:
•Time information (seconds/minutes/hours) directly in binary-coded decimal (BCD) code
•Calendar information (day/month/year/day of the week) directly in BCD code
•Interrupt generation periodically (1 second/1 minute/1 hour/1 day) or at a precise time (alarm function)
•32-kHz oscillator drift compensation and time correction
•Alarm-triggered system wake-up event
5.1.1Backup Battery
The TPS65030 and TPS65920 devices device implement a backup mode in which a backup battery can
keep the RTC running to maintain clock and time information even if the main supply is not present. If the
backup battery is rechargeable, the device also provides a backup battery charger so it can be recharged
when the main battery supply is present.
The backup domain powers the following:
•Internal 32.768-kHz crystal oscillator
•RTC
•Eight general-purpose (GP) storage registers
•Backup domain low-power regulator (VBRTC)
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5.2EPC
The EPC provides five system states for optimal power use by the system, as listed in Table 5-1.
Three categories of events can trigger state transitions:
•Hardware events: Supply/battery insertion, wake-up requests, USB plug, and RTC alarm
•Software events: Switch-off commands, switch-on commands, and sleep on commands
•Monitoring events: Supply/battery level check, main battery removal, main battery fail, and thermal
Table 5-1. System States
System StateDescription
NO SUPPLYThe system is not powered by any battery.
BACKUPThe system is powered only with the backup battery and maintains
only the VBRTC supply.
WAIT-ONThe system is powered by the main battery and maintains only the
VRRTC supply. It can accept switch-on requests.
ACTIVEThe system is powered by the main battery; all supplies can be
enabled with full current capability.
SLEEPThe main battery powers the system; selected supplies are enabled,
Figure 6-1 is the audio/voice module block diagram.
SWCS037G–MAY 2008– REVISED APRIL 2011
Figure 6-1. Audio/Voice Module Block Diagram
6.1Audio/Voice Downlink (RX) Module
The audio/voice module includes the following output stages:
•Predriver output signals for external class-D amplifiers (single-ended)
•Vibrator H-bridge
6.1.1Predriver for External Class-D Amplifier
The external class-D amplifiers provide a stereo signal on terminals PreD.LEFT and PreD.RIGHT to drive
the external class-D amplifier. These terminals are available if a stereo, single-ended, ac-coupled headset
is used.
Table 6-1 lists the predriver output characteristics.
Table 6-1. Predriver Output Characteristics
ParameterTest ConditionsMinTypMaxUnit
Load impedance10kΩ
50pF
Gain range
Absolute gain error–11dB
Peak-to-peak output voltage (0 dBFs)Default gain
Total harmonic distortionAt 0 dBFs–80–75dB
Default gain
Load > 10 kΩ // 50 pFAt –20 dBFs–70–65
Idle channel noise (20 Hz to 20 kHz, A-weighted)
SNR (A-weighted over 20-kHz bandwidth)At 0 dBFs8388dB
Default gain
Output PSRR (for all gains)20 Hz to 4 kHz90dB
(1) Audio digital filter = –62 to 0 dB (1-dB steps) and 0 to 12 dB (6-dB steps)
(2) The default gain setting assumes the ARXPGA has 0-dB gain setting (volume control) and output driver at 0-dB gain setting.
(3) The default gain setting assumes the ARXPGA has 0-dB gain setting (volume control) and output driver at 0-dB gain setting.
(1)
(2)
(3)
Voice digital filter = –3 to 12 dB (1-dB steps)
ARXPGA (volume control) = –24 to 12 dB (2-dB steps)
Output driver = –6 dB, 0 dB, 6 dB
Audio path–9230dB
Voice path–6630
(2)
1.5V
At –6 dBFs–74–69
At –60 dBFs–30–25
Default gain
(3)
–90–85dB
Load = 10 Ω
At –60 dBFs30
20 Hz to 20 kHz70
PP
6.1.1.2External Components and Application Schematics
Figure 6-2 is a simplified schematic for the external class-D predriver.
Input resistor (RPRor RPL) sets the gain of the external class D. For TPS2010D1, the gain is defined according to the
following equation:
Gain (V/V) = 2*150*103/(RPRor RPL)
RPRor RPL> 15 kΩ
A digital signal from the pulse width modulated generator is fed to the vibrator H-bridge driver. The vibrator
H-bridge is a differential driver that drives vibrator motors. The differential output allows dual rotation
directions.
6.1.2.1Vibrator H-Bridge Output Characteristics
Table 6-2 lists the vibrator H-bridge output characteristics.
Absolute gain errorAt 1 kHz–11dB
Peak-to-peak differential output voltage (0 dBFs)Gain = 0 dB1.5V
Total harmonic distortionAt 0 dBFs–80–75dB
THD+N (20 Hz to 20 kHz, A-weighted)At 0 dBFs60dB
Idle channel noise (20 Hz to 20 kHz, A-weighted)Default gain
Output PSRR20 Hz to 20 kHz60dB
Supply voltage (Vintana1)1.5V
Common mode output voltage for USB-CEA1.31.351.4V
Isolation between D+/D– during audio mode (20 Hz to 20 kHz)60dB
Crosstalk between right and left channelsUSB-CEA stereo–90dB
Crosstalk RX/Tx (1 VPPoutput)USB-CEA mono/stereo–60dB
Signal noise ratio (20 Hz to 20 kHz, A-weighted)At 0 dBFs60dB
Phone speaker amplifier output impedance at 1 kHzUSB-CEA (DP/DM)200Ω
(1) Audio digital filter = –62 to 0 dB (1-dB steps) and 0 to 12 dB (6-dB steps)
(2) The default gain setting assumes the ARXPGA has 0-dB gain setting (volume control) and output driver at 0.6-dB gain setting.
(1)
Voice digital filter = –36 to 12 dB (1-dB steps)
ARXPGA (volume control) = –24 to 12 dB (2-dB steps)
Output driver (USB-CEA) = –1 dB
Audio path–9230dB
Voice path–6630
At –6 dBFs–74–69
At –20 dBFs–70–65
At –60 dBFs–30–25
Figure 6-5 shows the digital audio filter downlink full path characteristics for the audio interface.
Figure 6-5. Digital Audio Filter Downlink Path Characteristics
The HPF can be bypassed. It is controlled by the MISC_SET_2 ARX_HPF_BYP bit set to address 0x49.
Table 6-4 lists the audio filter frequency responses relative to reference gain at 1 kHz.
Table 6-4. Digital Audio Filter RX Electrical Characteristics
ParameterConditionsMinTypMaxUnit
Passband0.42F
S
S
(1)
(1)
to 0.8F
–0.250.10.25dB
(1)
S
6075dB
(1)
S
Passband ripple0 to 0.42F
Stopband0.6F
Stopband attenuationF = 0.6F
Group delay15.8/F
Linear phase–1.41.4°
(1) FSis the sampling frequency (8, 11.025, 12, 16, 22.05, 24, 32, 44.1, or 48 kHz).
S
S
μs
6.1.5Boost Stage
The boost effect adds emphasis to low frequencies. It compensates for a HPF created by the capacitor
resistor (CR) filter of the headset (in ac-coupling configuration).
There are four modes. Three effects are available, with slightly different frequency responses, and the
fourth setting disables the boost effect:
•Boost effect 1
•Boost effect 2
•Boost effect 3
•Flat equalization: The boost effect is in bypass mode.
Boost effect modes are defined in Table 6-5.
Table 6-5 and Table 6-6 include the typical values according to the frequency response versus input
To improve the rejection, ensure that MICBIAS_GND is as clean as possible. This ground
must be shared with AGND of the TPS65920 or TPS65930 device and must not share with
AVSS4, which is the ground used by RX class AB output stages.
In differential mode, adding a low-pass filter (made by RSBand CB) is highly recommended if
coupling between RX output stages and the microphone is too high (and not enough
attenuation by the echo cancellation algorithm). The coupling can come from:
•The internal TPS65920/TPS65930 coupling between MICBIAS.OUT voltage and RX
output stages
•Coupling noise between MICBIAS.GND and AVSS4
In pseudodifferential mode, the dynamic resistance of the microphone improves the rejection
versus MICBIAS.OUT:
PSRR = 20*log((RB+ R
Dyn_mic
)/RB).
6.2.1.2Silicon Microphone Module Characteristics
Based on silicon micro-electrical-mechanical system (MEMS) technology, the new microphone achieves
the same acoustic and electrical properties as conventional microphones, but is more rugged and exhibits
higher heat resistance. These properties offer designers of a wide range of products greater flexibility and
new opportunities to integrate microphones.
The silicon microphone is the integration of mechanical elements and electronics on a common silicon
substrate through microfabrication technology.
The complementary metal oxide semiconductor (CMOS) MEMS microphone is more like an analog IC
than a classical microphone, or electric condenser microphone (ECM). It is powered as an IC with a direct
connection to the power supply. The on-chip isolation between the power input and the rest of the system
adds power supply rejection (PSR) to the component. This makes the CMOS MEMS microphone
inherently more immune to power supply noise than an ECM and eliminates the need for additional
filtering circuitry to keep the power supply line clean.
Table 6-9 lists the characteristics of the silicon microphone module.
The auxiliary input AUXR/FMR can be used as FM radio input. The amplification stage output is
connected to the ADC input. The FM radio input can also be output through an audio output stage.
6.2.2.1External Components
Figure 6-9 shows the external components on the auxiliary input.
SWCS037G–MAY 2008– REVISED APRIL 2011
Figure 6-9. Audio Auxiliary Input
NOTE
For other component values, see Table 14-1.
6.2.3Uplink Characteristics
Figure 6-10 shows the uplink amplifier. Table 6-10 lists the uplink characteristics.
ParameterTest ConditionsMinTypMaxUnit
Speech delayVoice path0.5ms
Gain range
Absolute gain0 dBFs at 1.02 kHz–11dB
Peak-to-peak differential input voltage (0 dBFs)For differential input1.5V
(1)
Figure 6-10. Uplink Amplifier
Table 6-10. Uplink Characteristics
061dB
0 dB gain setting
PP
(1) Gain range is defined by: Preamplifier = 0 to 30 dB; Filter = 0 to 31 dB (1-dB steps)
Peak-to-peak single-ended input voltage (0 dBFs)For single-ended input1.5V
Input impedance
Total harmonic distortion (sine wave at 1.02 kHz)At –1 dBFs–80–75dB
Idle channel noise20 Hz to 20 kHz, A-weighted, gain = 0 dB–85–78dBFs
Crosstalk A/D to D/AGain = 0 dB–80dB
Crosstalk path between two microphones–70dB
Intermodulation distortion2-tone method–60dB
(2) Impedance varies in the specified range with gain selection.
(2)
0 dB gain setting
40k70kΩ
At –6 dBFs–74–69
At –10 dBFs–70–65
At –20 dBFs–60–55
At –60 dBFs–20–15
16 kHz: < 20 Hz to 7 kHz, gain = 0 dB–90
8 kHz: P-weighted voice, gain = 18 dB–87
16 kHz: < 20 Hz to 7 kHz, gain = 18 dB–82
6.2.4Microphone Amplification Stage
The microphone amplification stages perform the single-to-differential conversion for single-ended inputs.
Two programmable gains from 0 dB to 30 dB can be set:
•Automatic level control for main microphone input. The gain step is 1 dB.
•Level control by register for line-in or carkit input. The gain step is 6 dB.
PP
The amplification stage outputs are connected to the ADC input (ADC left and right).
Gain range
Absolute gain, 0 dBFs at 1.02 kHz
Speech delayVoice path0.5ms
Input common mode voltage
Phone microphone amplifier input impedance at 1 kHzUSB-CEA8120kΩ
Peak-to-peak single-ended input voltage (0 dBFs)Default setting1.414V
Total harmonic distortion (sine wave at 1 kHz), default gain settingAt –1 dBFs–74–60dB
THD+N (20 Hz to 20 kHz, A-weighted)At 0 dBFs60dB
Signal noise ratio (20 Hz to 20 kHz, A-weighted)At 0 dBFs60dB
Idle channel noise (20 Hz to 20 kHz, A-weighted), default gainUSB-CEA–77
setting
Output PSRR (20 Hz to 20 kHz, A-weighted)USB-CEA50dB
(1) Gain range is defined by: CEA amplifier = 0.56 to –1.02 dB; Preamplifier = 0 to 30 dB; Filter = 0 to 31 dB (1-dB steps).
(2) The CEA default gain setting assumes 0 dB on the preamplifier, 1 dB on digital filter, and CEA amplifier at –1.02 dB.
(3) Full-scale input voltage is 1 V minimum.
The TPS65920/TPS65930 device includes a USB OTG transceiver with the CEA carkit interface that
supports USB 480 Mbps HS, 12 Mbps full-speed (FS), and USB 1.5 Mbps low-speed (LS) through a 4-pin
ULPI.
The carkit block ensures the interface between the phone and a carkit device. The TPS65920/TPS65930
USB supports the CEA carkit standard.
Figure 7-1 is a block diagram of the USB 2.0 physical layer (PHY).
SWCS037G–MAY 2008– REVISED APRIL 2011
Figure 7-1. USB 2.0 PHY Block Diagram
7.1.1Features
The device has a USB OTG carkit transceiver that allows system implementation that complies with the
following specifications:
•Universal Serial Bus 2.0 Specification
•On-The-Go Supplement to the USB 2.0 Specification
The features of the individual specifications are:
•Universal Serial Bus 2.0 Specification (hereafter referred to as the USB 2.0 specification):
– 5-V-tolerant data line at HS/FS, FS-only, and LS-only transmission rates
– 7-V-tolerant video bus (VBUS) line
– Integrated data line serial termination resistors (factory-trimmed)
– Integrated data line pullup and pulldown resistors
– On-chip 480-MHz phase-locked loop (PLL) from the internal system clock (19.2, 26, and 38.4 MHz)
– Synchronization (SYNC)/end-of-period (EOP) generation and checking
– Data and clock recovery from the USB stream
– Bit-stuffing/unstuffing and error detection
– Resume signaling, wakeup, and suspend detection
– USB 2.0 test modes
•On-The-Go Supplement to the USB 2.0 Specification (hereafter referred to as the OTG supplement to
the USB 2.0 specification):
– 3-pin LS/FS serial mode (DAT_SE0)
– 4-pin LS/FS serial mode (VP_VM)
•CEA-936A: Mini-USB Analog Carkit Interface Specification:
– Audio (mono/stereo) signaling
– UART transactions during audio signaling
– Basic and smart 4-wire/5-wire carkit, chargers, and accessories
– ID CEA resistor comparators
•UTMI+ Low Pin Interface Specification (hereafter referred to as the ULPI specification):
– 12-pin ULPI with 8-pin parallel data for USB signaling and register access
– 60-MHz clock generation
– Register mapping
Figure 7-2 is the USB system application schematic.
DIR transition
Delay time, UCLK rising edge toSteady state09
NXT transition
Delay time, UCLK rising edge toSteady state09
DATA[0:7] transition
(1)
ns
ns
(1)
MinTypMaxUnit
ns
ns
ns
7.1.3USB-CEA Carkit Port Timing
This mode allows the link for communication through the USB PHY to a remote carkit in CEA audio + data
during audio (DDA) mode as defined in the CEA-936A specification. In this mode, the ULPI data bus is
redefined as a 2-pin UART interface, which exchanges data through a direct access to the FS/LS analog
transmitter and receiver.
Figure 7-4 shows the USB-CEA carkit UART data flow.
Figure 7-4. USB-CEA Carkit UART Data Flow
Table 7-4 lists the USB-CEA carkit UART timings.
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UART_TX
DM
DP
UART_RX
CK1CK2
CK3CK4
037-047
TPS65930/TPS65920
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SWCS037G–MAY 2008– REVISED APRIL 2011
Table 7-4. USB-CEA Carkit UART Timings
NotationParameterMinMaxUnit
CK1t
CK2t
CK3t
CK4t
d(UART_TXH-DM)
d(UART_TXL-DM)
d(DPH-UART_RX)
d(DPL-UART_RX)
Delay time, UART_TX rising edge to DM transition4.011ns
Delay time, UART_TX falling edge to DM transition4.011ns
Delay time, DP rising edge to UART_RX
transition
Delay time, DP falling edge to UART_RX
transition
At 38.4 MHz205234
At 19.2 MHz310364
At 38.4 MHz205234
At 19.2 MHz310364
Figure 7-5 shows the USB-CEA carkit UART timings.
Figure 7-5. USB-CEA Carkit UART Timings
ns
ns
7.1.4PHY Electrical Characteristics
The PHY is the physical signaling layer of the USB 2.0. It contains the drivers and receivers for physical
data and protocol signaling on the DP and DM lines.
The PHY interfaces with the USB controller through the UTMI.
The transmitters and receivers in the PHY are of two main classes:
•FS and LS transceivers (legacy USB1.x transceivers)
•HS transceivers
To bias the transistors and run the logic, the PHY also contains reference generation circuitry which
consists of:
•A DPLL that does a frequency multiplication to achieve the 480-MHz low-jitter lock necessary for USB,
and the clock required for the switched capacitor resistance block
•A switched capacitor resistance block that replicates an external resistor on chip
Built-in pullup and pulldown resistors are used as part of the protocol signaling.
The PHY also contains circuitry that protects it from an accidental 5-V short on the DP and DM lines and
from 8-kV IEC ESD strikes.
7.1.4.1HS Differential Receiver
The HS receiver consists of the following blocks:
•A differential input comparator to receive the serial data
•A squelch detector to qualify the received data
•An oversampler-based clock data recovery scheme followed by a nonreturn to zero inverted (NRZI)
decoder, bit unstuffing, and serial-to-parallel converter to generate the UTMI DATAOUT
Table 7-5 lists the characteristics of the HS differential receiver.
HS squelch detection thresholdV
HS disconnect detection thresholdV
HS data signaling common mode voltageV
range
HS differential input sensitivityV
HSSQ
HSDSC
HSCM
DIHS
(Differential signal amplitude)100125150mV
(Differential signal amplitude)525600625mV
–50200500mV
(Differential signal amplitude)–100100mV
Input Impedance for HS
Internal specification for input capacitanceC
Internal C
DP/DM matchingC
HSLOAD
HSLOAD
HSLOADM
11pF
0.2pF
External Components With the Total Budget Combined (without USB cable load)
External capacitance on DP or DM2pF
External series resistance on DP or DM1Ω
7.1.4.2HS Differential Transmitter
The HS transmitter is always operated on the UTMI parallel interface. The parallel data on the interface is
serialized, bit stuffed, NRZI encoded, and transmitted as a dc output current on DP or DM, depending on
the data. Each line has an effective 22.5-Ω load to ground, which generates the voltage levels for
signaling.
A disconnect detector is also part of the HS transmitter. A disconnect on the far end of the cable causes
the impedance seen by the transmitter to double, thereby doubling the differential amplitude seen on the
DP/DM lines.
Table 7-6 lists the characteristics of the HS differential transmitter.
Table 7-6. HS Differential Transmitter
ParameterCommentsMinTypMaxUnit
Output Levels for HS
HS TX idle levelV
HS TX data signaling highV
HS data signaling lowV
Chirp J levelV
Chirp K levelV
HS TX disconnect thresholdV
Rise timet
Fall timet
Driver output resistanceZ
HSOI
HSOH
HSOL
CHIRPJ
CHIRPK
DISCOUT
HSR
HSF
HSDRV
Absolute voltage DP/DM – internal/external 45 Ω–10010mV
Absolute voltage DP/DM – internal/external 45 Ω360400440mV
–10010mV
Differential voltage7008001100mV
Differential voltage–900–800–500mV
Absolute voltage DP/DM – no external 45 Ω700mV
Driver Characteristics
(10%–90%)500ps
(10%–90%)500ps
Also serves as HS termination40.54549.5Ω
The TPS65920/TPS65930 device provides the MADC resource to the host processors in the system
(hardware and software conversion modes).
The MADC generates interrupt signals to the host processors. Interrupts are handled primarily by the
MADC internal secondary interrupt handler and secondly at the upper level (outside the MADC) by the
TPS65920/TPS65930 interrupt primary handler.
8.2MADC Electrical Characteristics
Table 8-1 lists the electrical characteristics of the MADC.
Table 8-1. MADC Electrical Characteristics
ParameterConditionsMinTypMaxUnit
Resolution10Bit
ADIN2 input dynamic range for external input02.5V
MADC voltage reference1.5V
ADIN0 differential nonlinearity–11LSB
ADIN0 integral nonlinearityBest fitting–22LSB
Integral nonlinearity for ADIN2
OffsetBest fitting–28.528.5mV
Input bias1μA
Input capacitor C
Maximum source input resistance Rs (for all 16100kΩ
internal or external inputs)
Input current leakage (for all 16 internal or external1μA
inputs)
BANK
Best fitting for codes 230 to maximum–22LSB
Best fitting considering offset of 25 LSB–3.753.75LSB
FRunning frequency1MHz
T = 1/FClock period1μs
NNumber of analog inputs to convert in a single sequence02
TstartSW1, SW2, or USB asynchronous request or real-time STARTADC
Tsettling timeSettling time to wait before sampling a stable analog input (capacitor51220μs
TstartsarThe successive approximation registers ADC start time1μs
Tadc timeThe successive approximation registers ADC conversion time10μs
Tcapture timeTcapture time is the conversion result capture time.2μs
Tstop12μs
Full-conversionOne channel (N = 1)
sequence time
Conversion sequence
time
STARTADC pulse
duration
(1) Total sequence conversion time general formula: Tstart+N*(1+Tsettling+Tadc+Tcapture) +Tstop
request
bank charge time)
Tsettling is calculated from the max((Rs + Ron)*Cbank) of the two
possible input sources (internal or external). Ron is the resistance of the
selection analog input switches (5 kΩ). This time is
software-programmable by the open-core protocol (OCP) register.
(1)
Both channels
Without Tstart and Tstop: One channel (N = 1)
Without Tstart and Tstop: Both channels
Table 8-3 is illustrated in Figure 8-1, which is a conversion sequence general timing diagram. The Busy
parameter indicates that a conversion sequence is running, and the channel N result register parameter
corresponds to the result register of the RT/GP selected channel.
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Figure 8-1. Conversion Sequence General Timing Diagram
Two arrays of parallel LEDs are driven (dedicated for the phone light). The parallel LEDs are supplied by
VBAT, and the external resistor value is given for each LED. The TPS65920/TPS65930 device supports
two open-drain LED drivers for the keypad backlight, having drain connections tolerant of the main battery
voltage.
Figure 9-1 is the LED driver block diagram. Table 9-1 lists the electrical characteristics of the LED driver.
When a key button of the keyboard matrix is pressed, the corresponding row and column lines are shorted
together. To allow key press detection, all input pins (KBR) are pulled up to VCCand all output pins (KBC)
Figure 10-1. Keyboard Connection
are driven to a low level.
Any action on a button generates an interrupt to the sequencer.
The decoding sequence is written to allow detection of simultaneous press actions on several key buttons.
The keyboard interface can be used with a smaller keyboard area than 6 × 6. To use a 3 × 3 keyboard,
KBR(4) and KBR(5) must be tied high to prevent any scanning process distribution.
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Device
32KXOUT
OR
HFCLKIN
32KCLKOUT
HFCLKOUT
32KXIN
OR
OR
32kHz
030-002
TPS65930/TPS65920
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11Clock Specifications
The TPS65920/TPS65930 device includes several I/O clock pins. The TPS65920/TPS65930 device has
two sources of high-stability clock signals: the external high-frequency clock (HFCLKIN) input and an
onboard 32-kHz oscillator (an external 32-kHz signal can be provided). Figure 11-1 is the clock overview.
SWCS037G–MAY 2008– REVISED APRIL 2011
11.1 Clock Features
The TPS65920/TPS65930 device accepts two sources of high-stability clock signals:
•32KXIN/32KXOUT: Onboard 32-kHz crystal oscillator (an external 32-kHz input clock can be provided)
•HFCLKIN: External high-frequency clock (19.2, 26, or 38.4 MHz).
The TPS65920/TPS65930 device can provide:
•32KCLKOUT digital output clock
•HFCLKOUT digital output clock with the same frequency as the HFCLKIN input clock
(1) HFCLK duty cycle and frequency is not altered by the internal circuit. The input clock accuracy must
match that of the system requirement; for example, OMAP device.
32.768 kHzSquare wave–45%/55%
11.2.2 HFCLKIN
Crystal±30 ppm40%/60%
Sine wave––
Square wave±150 PPMSee
Sine wave––
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(1)
HFCLKIN can be a square- or a sine-wave input clock. If a square-wave input clock is provided, it is
recommended to switch the block to bypass mode to avoid loading the clock.
Figure 11-2 shows the HFCLKIN clock distribution.
Figure 11-2. HFCLKIN Clock Distribution
When a device needs a clock signal other than 32.768 kHz, it makes a clock request and activates the
CLKREQ pin. As a result, the TPS65920/TPS65930 device immediately sets CLKEN to 1 to warn the
clock provider in the system about the clock request and starts a timer (maximum of 5.2 ms using the
32.768-kHz clock). When the timer expires, the TPS65920/TPS65930 device opens a gated clock, the
timer automatically reloads the defined value, and a high-frequency output clock signal is available
through the HFCLKOUT pin. The output drive of HFCLKOUT is programmable (minimum load 10 pF,
maximum load 40 pF) and must be at 40 pF by default.
With a register setting, the mirroring of CLKEN can be enabled on CLKEN2. When this mirroring feature is
not enabled, CLKEN2 can be used as a general-purpose output controlled through I2C accesses.
CLKREQ, when enabled, has a weak pulldown resistor to support the wired-OR clock request.
Figure 11-3 shows an example of the wired-OR clock request.
SWCS037G–MAY 2008– REVISED APRIL 2011
Figure 11-3. Example of Wired-OR Clock Request
The timer default value must be the worst case (10 ms) for the clock providers. For legacy or workaround
support, the NSLEEP1 and NSLEEP2 signals can also be used as a clock request even if it is not their
primary goal. By default, this feature is disabled and must be enabled individually by setting the register
bits associated with each signal.
When the external clock signal is present on the HFCLKIN ball, it is possible to use this clock instead of
the internal RC oscillator and then synchronize the system on the same clock. The RC oscillator can then
go to idle mode.
Table 11-2 lists the input clock electrical characteristics of the HFCLKIN input clock.
(1) LP = Low-power mode
(2) HP = High-power mode
(3) BP = Bypass mode
(4) PD = Power-down mode
(5) Bypass input max voltage is the same as the maximum voltage provided for the I/O interface (IO.1P8V).
LP/HP (sine wave)0.30.71.45
BP
LP175
BP/PD39nA
(2)
/HP
(sine wave)4μs
(3)
(4)
/PD
(square wave)01.85
(5)
PP
μA
Table 11-3 lists the input clock timing requirements of the HFCLKIN input clock when the source is a
Table 11-3. HFCLKIN Square Input Clock Timing Requirements with Slicer in Bypass
NameParameterDescriptionMinTypMaxUnit
CH01/t
CH1t
CH3t
CH4t
(1) Default drive capability is 40 pF.
C(HFCLKIN)
W(HFCLKIN)
R(HFCLKIN)
F(HFCLKIN)
Frequency, HFCLKIN19.2, 26, or 38.4MHz
Pulse duration, HFCLKIN low or high0.45*t
Rise time, HFCLKIN
Fall time, HFCLKIN
(1)
(1)
C(HFCLKIN)
0.55*t
C(HFCLKIN)
5ns
5ns
Figure 11-4. HFCLKIN Squared Input Clock
11.2.3 32-kHz Input Clock
A 32.768-kHz input clock (often abbreviated to 32-kHz) generates the clocks for the RTC. It has a low-jitter
mode where the current consumption increases for lower jitter. It is possible to use the 32-kHz input clock
with an external crystal or clock source. Depending on the mode chosen, the 32K oscillator is configured
one of two ways:
•An external 32.768-kHz crystal through the 32KXIN/32KXOUT balls (see Figure 11-5). This
configuration is available only for master mode (for more information, see Section 12).
•An external square/sine wave of 32.768 kHz through 32KXIN with amplitude equal to 1.8 or 1.85 V
(see Figure 11-7, Figure 11-8, and Figure 11-9). This configuration is available for the master and
slave modes (for more information, see Section 12).
Figure 11-5 shows the 32-kHz oscillator block diagram with crystal in master mode.
SWCS037G–MAY 2008– REVISED APRIL 2011
NOTE: Switches close by default and open only if register access enables very-low-power mode when VBAT < 2.7 V.
Figure 11-5. 32-kHz Oscillator Block Diagram In Master Mode With Crystal
CXIN and CXOUT represent the total capacitance of the printed circuit board (PCB) and components,
excluding the crystal. Their values depend on the datasheet of the crystal, the internal capacitors, and the
parallel capacitor. The frequency of the oscillations depends on the value of the capacitors. The crystal
must be in the fundamental mode of operation and parallel resonant.
NOTE
For the values of CXIN and CXOUT, see Table 14-1.
Table 11-4 lists the required electrical constraints.
Table 11-4. Crystal Electrical Characteristics
ParameterMinTypMaxUnit
Parallel resonance crystal frequency32.768kHz
Input voltage, Vin (normal mode)1.01.31.55V
Internal capacitor on each input (Cint)10pF
Parallel input capacitance (Cpin)1pF
Nominal load cap on each oscillator input CXIN and CXOUT
Pin-to-pin capacitance1.61.8pF
(1) Nominal load capacitor on each oscillator input defined as CXIN = CXOUT = Cosc*2 – (Cint + Cpin). Cosc is the load capacitor defined
Crystal ESR
Crystal shunt capacitance, C
Crystal tolerance at room temperature, 25°C–3030ppm
Crystal tolerance versus temperature range (–40°C to 85°C)–200200ppm
Maximum drive power1μW
Operating drive level0.5μW
(2) The crystal motional resistance Rm relates to the equivalent series resistance (ESR) by the following formula:
(2)
O
Measured with the load capacitance specified by the crystal manufacturer. If CXIN = CXOUT = 10 pF, CL= 5 pF. Parasitic capacitance
from the package and board must also be considered.
75kΩ
1pF
When selecting a crystal, the system design must consider the temperature and aging characteristics of a
crystal versus the user environment and expected lifetime of the system.
Table 11-5 and Table 11-6 list the switching characteristics of the oscillator and the timing requirements of
the 32.768-kHz input clock. Figure 11-6 shows the crystal oscillator output in normal mode.
Table 11-5. Base Oscillator Switching Characteristics
Frequency, 32 kHz32.768kHz
Pulse duration, 32 kHz low or high0.40*t
C(32KHZ)
0.60*t
C(32KHZ)
Figure 11-6. 32-kHz Crystal Input
11.2.3.2 External Clock Description
When an external 32K clock is used instead of a crystal, three configuration can be used:
•A square- or sine-wave input can be applied to the 32KXIN pin with amplitude of 1.85 or 1.8 V. The
32KXOUT pin can be driven to a dc value of the square- or sine-wave amplitude divided by 2. This
configuration, shown in Figure 11-7, is recommended if a large load is applied on the 32KXOUT pin.
•A square- or sine-wave input can be applied to the 32KXIN pin with amplitude of 1.85 or 1.8 V. The
32KXOUT pin can be left floating. This configuration, showed in Figure 11-8, is used if no charge is
applied on the 32KXOUT pin.
•The oscillator is in bypass mode and a square-wave input can be applied to the 32KXIN pin with
amplitude of 1.8 V. The 32KXOUT pin can be left floating. This configuration, shown in Figure 11-9, is
The TPS65920/TPS65930 device has an internal 32.768-kHz oscillator connected to an external
32.768-kHz crystal through the 32KXIN/32KXOUT balls or an external digital 32.768-kHz clock through the
32KXIN input (see Figure 11-11). The TPS65920/TPS65930 device also generates a 32.768-kHz digital
clock through the 32KCLKOUT pin and can broadcast it externally to the application processor or any
other devices. The 32KCLKOUT clock is broadcast by default in TPS65920/TPS65930 active mode, but
can be disabled if it is not used.
The 32.768-kHz clock (or signal) is also used to clock the RTC embedded in the TPS65920/TPS65930
device. The RTC is not enabled by default. The host processor must set the correct date and time and
enable the RTC functionality.
The 32KCLKOUT output buffer can drive several devices (up to 40-pF load). At startup, 32KCLKOUT
must be stabilized (frequency/duty cycle) before the signal output. Depending on the startup conditions,
this can delay the startup sequence.
Table 11-9 lists the electrical characteristics of the 32KCLKOUT output clock.
Figure 11-13 shows the HFCLKOUT output clock waveform.
Figure 11-13. HFCLKOUT Output Clock
11.3.3 Output Clock Stabilization Time
Figure 11-14 shows the 32KCLKOUT and HFCLKOUT clock stabilization time.
SWCS037G–MAY 2008– REVISED APRIL 2011
NOTE: Tstartup, Delay1, and Delay2 depend on the boot mode (see Section 4.5, Power Management).
NOTE: Ensure that the high frequency oscillator start-up time is in spec for the boot mode used. During power-up the internal
delay, Delay1 above is fixed (5.2 ms and 5.3 ms depending on boot mode). The start-up time for the oscillator must
be less than the fixed delay.
Figure 11-14. 32KCLKOUT and HFCLKOUT Clock Stabilization Time
12Timing Requirements and Switching Characteristics
12.1 Timing Parameters
The timing parameter symbols used in the timing requirement and switching characteristic tables are
created in accordance with JEDEC Standard 100. To shorten the symbols, some pin names and other
related terminologies are abbreviated, as shown in Table 12-1.
Table 12-1. Timing Parameters
Subscripts
SymbolParameter
cCycle time (period)
dDelay time
disDisable time
enEnable time
hHold time
suSetup time
STARTStart bit
tTransition time
vValid time
wPulse duration (width)
XUnknown, changing, or don't care level
HHigh
LLow
VValid
The TPS65920/TPS65930 device provides two I2C HS slave interfaces (one for general-purpose and one
for SmartReflex). These interfaces support standard mode (100 Kbps), fast mode (400 Kbps), and HS
mode (3.4 Mbps). The general-purpose I2C module embeds four slave hard-coded addresses (ID1 = 48h,
ID2 = 49h, ID3 = 4Ah, and ID4 = 4Bh). The SmartReflex I2C module uses one slave hard-coded address
(ID5). The master mode is not supported.
Table 12-3 and Table 12-4 assume testing over the recommended operating conditions (see Figure 12-1).
Figure 12-1. I2C Interface—Transmit and Receive in Slave Mode
Setup time, SDA valid to SCL high10ns
Hold time, SDA valid from SCL low070ns
Setup time, SCL high to SDA low160ns
Hold time, SCL low from SDA low160ns
Setup time, SDA high to SCL high160ns
Setup time, SDA valid to SCL high100ns
Hold time, SDA valid from SCL low00.9ns
Setup time, SCL high to SDA low0.6ns
Hold time, SCL low from SDA low0.6ns
Setup time, SDA high to SCL high0.6ns
Setup time, SDA valid to SCL high250ns
Hold time, SDA valid from SCL low0ns
Setup time, SCL high to SDA low4.7ns
Hold time, SCL low from SDA low4ns
Setup time, SDA high to SCL high4ns
(1) The input timing requirements are given by considering a rising or falling time of:
80 ns in HS mode (3.4 Mbps)
300 ns in fast-speed mode (400 Kbps)
1000 ns in standard mode (100 Kbps)
(2) SDA is equal to I2C.SR.SDA or I2C.CNTL.SDA.
SCL is equal to I2C.SR.SCL or I2C.CNTL.SCL.
Table 12-4 lists the switching requirements of the I2C interface.
The TPS65920/TPS65930 device acts as a master for the TDM and I2S interfaces or as a slave for only
the I2S interface. If the TPS65920/TPS65930 device is the master, it must provide the frame
synchronization (TDM/I2S_SYNC) and bit clock (TDM/I2S_CLK) to the host processor. If it is the slave,
the TPS65920/TPS65930 device receives frame synchronization and the bit clock.
SWCS037G–MAY 2008– REVISED APRIL 2011
(1) (2)
(3)
µs
The TPS65920/TPS65930 device supports the I2S, TDM, left-justified, and right-justified data formats, but
does not support TDM slave mode.
Setup time, I2S.DIN valid to I2S.CLK high225ns
Hold time, I2S.DIN valid from I2S.CLK high.0ns
Slave Mode
Cycle time, I2S.CLK
Pulse duration, I2S.CLK high or low
(1)
(2)
1/64 * Fsns
0.45 * P0.55 * Pns
Setup time, I2S.DIN valid to I2S.CLK high5ns
Hold time, I2S.DIN valid from I2S.CLK high.5ns
Setup time, I2S.SYNC valid to I2S.CLK high5ns
Hold time, I2S.SYNC valid from I2S.CLK high5ns
NotationParameterMinMaxUnit
I0t
I1t
I2t
I5t
I5t
c(CLK)
w(CLK)
d(CLKL-SYNC)
d(CLKL-DOUT)
d(CLKL-DOUT)
(1) Fs = 8 to 48 kHz; 96 kHz for RX path only
(2) P = I2S.CLK period
Master Mode
Cycle time, I2S.CLK
Pulse duration, I2S.CLK high or low
(1)
(2)
1/64 * Fsns
0.45 * P0.55 * Pns
Delay time, I2S.CLK falling edge to I2S.SYNC–1010ns
transition
Delay time, I2S.CLK falling edge to I2S.DOUT–1010ns
transition
Slave Mode
Delay time, I2S.CLK falling edge to I2S.DOUT020ns
transition