TEXAS INSTRUMENTS TPS40056 Technical data

8
  
 

SLVS612 − APRIL 2006
FEATURES
Operating Input Voltage 10 V to 40 V
100 kHz to 1 MHz Voltage Mode Controller
D Internal Gate Drive Outputs for High-Side
and Synchronous N-Channel MOSFETs
D Externally Synchronizable D Programmable Short-Circuit Protection D Thermal Shutdown D 16-Pin PowerPADt Package (θ
= 2°C/W)
JC
D Programmable Closed-Loop Soft-Start
APPLICATIONS
DDR Tracking Regulators
SIMPLIFIED APPLICATION DIAGRAM
CONTENTS
Device Ratings 2 Electrical Characteristics 3 Terminal Information 5 Application Information 7 Design Example 22 Additional References 29
DESCRIPTION
The TPS40056 is part of a family of high-voltage, wide input, synchronous, step-down converters. The TPS40056 offers design flexibility with a variety of user programmable functions, including soft-start, operating frequency, high-side current limit, and loop compensation. The TPS40056 is also synchronizable to an external supply. It incorporates MOSFET gate drivers for external N-channel high-side and synchronous rectifier (SR) MOSFETs. Gate drive logic incorporates anti-cross conduction circuitry to prevent simultaneous high-side and synchronous rectifier conduction. The externally programmable short circuit protection provides pulse-by-pulse current limit, as well as hiccup mode operation utilizing an internal fault counter for longer duration overloads.
+
V
IN
V
TRKIN
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TPS40056PWP
SYNC
1 2
RT BP5
3 4 EA_REF 5
SGND 6SS 7 VFB 8 COMP
PAD
16
ILIM
15
VIN
14BOOST
HDRV
13 12
SW
BP10
11
LDRV
10
PGND
9
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+
V
TT
UDG−03080
Copyright 2006, Texas Instruments Incorporated
1

V
C
SLVS612 − APRIL 2006
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
T
A
−40°C to 85°C Plastic HTSSOP(PWP)
(1)
The PWP package is also available taped and reeled. Add an R suffix to the device type (i.e., TPS40056PWPR). See the application section of the data sheet for PowerPAD drawing and layout information.
PACKAGE PART NUMBER
(1)
TPS40056PWP
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range unless otherwise noted
VIN 45
Input voltage range, V
Output voltage range, V Output current, I Operating junction temperature range, T Storage temperature, T Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260
(2)
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
IN
O
OUT
J
stg
VFB, SS, SYNC, EA_REF −0.3 to 6 SW −0.3 to 45 SW, transient < 50 ns −2.5 COMP, RT, SS −0.3 to 6 RT 200 µA
(2)
TPS40056 UNIT
−40 to 125
−55 to 150
RECOMMENDED OPERATING CONDITIONS
MIN NOM MAX UNIT
Input voltage, V Operating free-air temperature, T
I
A
PWP PACKAGE
(TOP VIEW)
(3)(4)
10 40 V
−40 85 °C
V
°C
SYNC
RT
BP5
EA_REF
SGND
SS/SD
VFB
COMP
(3)
For more information on the PWP package, refer to TI Technical Brief, Literature No. SLMA002.
(4)
PowerPADt heat slug must be connected to SGND (pin 5) or electrically isolated from all other pins.
2
1 2 3
THERMAL
4 5 6 7 8
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PAD
16 15 14 13 12 11 10
ILIM VIN BOOST HDRV SW BP10 LDRV
9
PGND
ELECTRICAL CHARACTERISTICS
TA = −40°C to 85°C, VIN = 12 Vdc, RT = 90.9 k, fSW = 500 kHz, V otherwise noted)
PARAMETER
INPUT SUPPLY
V
IN
OPERATING CURRENT
I
DD
BP5
V
BP5
OSCILLATOR/RAMP GENERATOR
f
OSC
V
RAMP
V
IH
V
IL
I
SYNC
V
RT
SOFT START
I
SS
V
SS
t
DSCH
t
SS
BP10
V
BP10
ERROR AMPLIFIER
V
EA_REF
G
BW
G
BW
A
VOL
I
OH
I
OL
V
OH
V
OL
I
BIAS
(1) (2)
Input voltage range, VIN 10 40 V
Quiescent current
Ouput voltage I
Accuracy 9 V VIN≤ 40 V 520 580 640 kHz PWM ramp voltage High-level input voltage, SYNC 2 5 Low-level input voltage, SYNC 0.8 V Input current, SYNC 5 10 µA Pulse width, SYNC 50 ns RT voltage 2.38 2.50 2.58 V
Maximum duty cycle Minumum duty cycle VFB EA_REF + 0.05 V 0%
Soft-start source current 1.65 2.35 3.05 µA Soft-start clamp voltage 3.7 V Discharge time CSS = 220 pF 1.6 2.2 2.8 Soft-start time CSS = 220 pF, 0 V ≤ VSS≤ 1.6 V 100 155 205
Ouput voltage 9.0 9.6 10.3 V
Error amplifier reference input voltage Input offset voltage 0.5 V VFB≤ 2.25 V −6 6 mV Input offset voltage 0.2 V VFB≤ 0.5 V −10 0 10 MV Gain bandwidth 0.2 V VFB≤ 0.5 V 1.5 3.5 MHz Gain bandwidth 0.5 V VFB≤ 2.25 V 2.5 5.0 MHz Open loop gain 60 80 dB High-level output source current 1.5 4.0 Low-level output sink current 2.0 4.0 High-level output voltage I Low-level output voltage I Input bias current VFB = 1.2 V 100 200 nA
Ensured by design. Not production tested. Common mode range extends to ground, but not tested below 200 mV.
(1)
(1)(2)
Output drivers not switching, VFB = 1.3 V
= 1 mA 4.5 5.0 5.5 V
LOAD
V
PEAK−VVAL
VFB = 0 V, fSW≤ 600 kHz 90% VFB = 0 V, 600 kHz ≤ fSW≤ 1 MHz
10 V VIN≤ 40 V 0.2 2.5 V
SOURCE
= 500 µA 0.20 0.35
SINK
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SLVS612 − APRIL 2006
EA_REF
= 1.25 V, all parameters at zero power dissipation (unless
TEST CONDITIONS MIN TYP MAX UNIT
1.5 3.0 mA
2.0
85%
mA
= 500 µA 3.2 3.5
V
µs
V
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3

ns
OS
VOSOffset voltage SW vs. ILIM
mV
SLVS612 − APRIL 2006
ELECTRICAL CHARACTERISTICS
TA = −40°C to 85°C, VIN = 12 Vdc, RT = 90.9 k, fSW = 500 kHz, V otherwise noted)
PARAMETER
CURRENT LIMIT
I
SINK
t
ON
t
OFF
V
OUTPUT DRIVER
t
LRISE
t
LFALL
t
HRISE
t
HFALL
V V V V
SS/SD SHUTDOWN
V V
BOOST REGULATOR
V
BOOST
SW NODE
I
LEAK
THERMAL SHUTDOWN
T
SD
UVLO
(1)
Current limit sink current 8 10 12 µA
V
= 11.7 V, VSW = (V
Propagation delay to output Switch leading-edge blanking pulse time
Off time during a fault 7 cycles
Offset voltage SW vs. ILIM
Low-side driver rise time Low-side driver fall time High-side driver rise time High-side driver fall time
High-level ouput voltage, HDRV I
OH
Low-level ouput voltage, HDRV I
OL
High-level ouput voltage, LDRV I
OH
Low-level ouput voltage, LDRV I
OL
Minimum controllable pulse width
Shutdown threshold voltage Outputs off 90 125 165
SD
Device active threshold voltage 165 210 260
EN
Output voltage VIN = 12.0 V 19 20 21 V
Leakage current
Shutdown temperature Hysteresis
Input voltage UVLO threshold 8.20 8.75 9.25 Input voltage UVLO hysteresis 1.0
Ensured by design. Not production tested.
(1)
(1)
(1)
(1)
(1)
ILIM
V
= 11.7 V, VSW = (V
ILIM
V
= 11.6 V, TA = 25°C −100 −70 −40
ILIM
V
= 11.6 V, 0°C TA 85°C
ILIM
V
= 11.6 V, −40°C ≤ TA 85°C −125 −15
ILIM
C
LOAD
C
LOAD
HDRV = HDRV = LDRV = LDRV =
EA_REF
= 2200 pF
= 2200 pF, (HDRV − SW)
−0.1 A (HDRV − SW)
0.1 A (HDRV − SW) 0.75
−0.1 A
0.1 A 0.5
= 1.25 V all parameters at zero power dissipation (unless
TEST CONDITIONS MIN TYP MAX UNIT
− 0.5 V) 300
ILIM ILIM
− 2 V) 100
−125 −30
BOOST
−1.5 V
BP10
−1.4 V
250
48 96 24 48 48 96 36 72
BOOST
−1.0 V
BP10
− 1.0 V
100 150 ns
25 µA
165
20
ns
mV
ns
V
mV
°C
V
4
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I/O
DESCRIPTION
SLVS612 − APRIL 2006
TERMINAL FUNCTIONS
TERMINAL
NAME NO.
BOOST 14 O
BP5 3
BP10 11 O
COMP 8 O
HDRV 13 O
ILIM 16 I
EA_REF 4 I Non-inverting input to the error amplifier and used as the reference for the feedback loop. LDRV 10 O
PGND 9 − RT 2 I A resistor is connected from this pin to ground to set the internal oscillator and switching frequency.
SGND 5 Signal ground reference for the device.
SS/SD 6 I
SW 12 I This pin is connected to the switched node of the converter and used for overcurrent sensing. SYNC 1 I
VFB 7 I VIN 15 I Supply voltage for the device.
Gate drive voltage for the high side N-channel MOSFET. The BOOST voltage is 9 V greater than the input voltage. A 0.1-µF ceramic capacitor should be connected from this pin to the SW pin.
5-V reference. This pin should be bypassed to ground with a 0.1-µF ceramic capacitor. This pin may be used with an external dc load of 1 mA or less.
O
10-V reference used for gate drive of the N-channel synchronous rectifier. This pin should be bypassed by a 1-µF ceramic capacitor. This pin may be used with an external dc load of 1 mA or less.
Output of the error amplifier , input to the PWM comparator. A feedback network is connected from this pin to the VFB pin to compensate the overall loop. The comp pin is internally clamped above the peak of the ramp to improve large signal transient response.
Floating gate drive for the high-side N-channel MOSFET. This pin switches from BOOST (MOSFET on) to SW (MOSFET off).
Current limit pin, used to set the overcurrent threshold. An internal current sink from this pin to ground sets a voltage drop across an external resistor connected from this pin to VCC. The voltage on this pin is compared to the voltage drop (VIN −SW) across the high side MOSFET during conduction.
Gate drive for the N-channel synchronous rectifier. This pin switches from BP10 (MOSFET on) to ground (MOSFET off).
Power ground reference for the device. There should be a low-impedance path from this pin to the source(s) of the lower MOSFET(s).
Soft-start programming pin. A capacitor connected from this pin to ground programs the soft-start time. The capacitor is charged with an internal current source of 2.3 µA. The resulting voltage ramp on the SS pin is used as a second non-inverting input to the error amplifier. Output voltage regulation is controlled by the SS voltage ramp until the voltage on the SS pin reaches the internal reference voltage , EA_REF V. Pulling this pin low disables the controller.
Syncronization input for the device. This pin can be used to synchronize the oscillator to an external master frequency. If synchronization is not used, connect this pin to SGND.
Inverting input to the error amplifier . In normal operation the voltage on this pin is equal to the EA_REF reference voltage.
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SLVS612 − APRIL 2006
FUNCTIONAL BLOCK DIAGRAM
VIN
ILIM
16
BP10
1115
BP10
RT
SYNC
BP5
COMP
EA_REF
VFB
SS/SD
2
1
BP5
3 7
8
4
7
6
7
Restart
Clock
Oscillator
+ +
0.7 V
+
7
RAMP
0.7 VREF
+
10 V Regulator
7
7 7 7 7
QR
CLK
7
3−Bit Up/Down
Fault Counter
Restart
7
7
7
Fault
CL
5
SGND
N−channel
Driver
BP10
7
N−channel
Driver
1.5 VREF
0.7 VREF
Reference
Voltages
Fault
7
CL
7
+
CLK
1.5 VREF
3.5 VREF BP5
SQ
7
14
BOOST
13
HDRV
12
SW
10
LDRV
9
PGND
UDG−03081
6
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(1)
(2)
SLVS612 − APRIL 2006
APPLICATION INFORMATION
The TPS40056 allows the user to optimize the PWM controller to the specific application. The TPS40056 is the controller of choice for synchronous buck designs, the output of which is required to track
another voltage. It has two quadrant operation and can source or sink output current, providing the best transient response.
SW NODE RESISTOR AND DIODE
The SW node of the converter will be negative during the dead time when both the upper and lower MOSFETs are off. The magnitude of this negative voltage is dependent on the lower MOSFET body diode and the output current which flows during this dead time. This negative voltage could affect the operation of the controller, especially at low input voltages.
Therefore, a resistor ( 3.3 to 4.7 ) and Schottky diode must be placed between the lower MOSFET drain and pin 12, SW, of the controller as shown in Figure 10. The Schottky diode must have a voltage rating to accommodate the input voltage and ringing on the SW node of the converter . A 30-V Schottky such as a BAT54 or a 40-V Schottky such as a Zetex ZHCS400 or Vishay SD103AWS are adequate. These components are shown in Figure 10 as R
and D2.
SW

SETTING THE SWITCHING FREQUENCY (PROGRAMMING THE CLOCK OSCILLATOR)
The TPS40056 has independent clock oscillator and ramp generator circuits. The clock oscillator serves as the master clock to the ramp generator circuit. The switching frequency , f a single resistor (R
R
+ ǒ
T
) to ground. The clock frequency is related to RT, in k by Equation (1).
T
f
17.82 10
SW
1
* 23ǓkW
*6
in kHz, of the clock oscillator is set by
SW
UVLO OPERATION
The TPS40056 uses fixed UVLO protection. The fixed UVLO monitors the input voltage. The UVLO circuit holds the soft-start low until the input voltage has exceeded the undervoltage threshold.
TRACKING CONFIGURATION (V
Setting the output, V divider(s) R4,R5,R1 and R6 as shown in Figure 1. The voltage on the EA_REF input should be in the range of
0.2 V to 2.5 V. If the output voltage is less than 2.5 V, resistor R6 can be omitted. For example in the DDR case, if the voltage V and omit R6. In general, the output voltage, V in Equation (2).
V
OUT
TRKIN
+ V
TRKIN
to track another voltage, V
OUT
ramps up to 2.5 V and it is desired to have V
R5
ǒ
R4 ) R5
TRACKING VIN)
OUT
R6 ) R1
Ǔ ǒ
R6
, is simply a matter of selecting the proper voltage
TRKIN
to track it and come up to 1.25 V, set R4=R5
, in terms of VTRKIN and the two voltage dividers is shown
OUT
Ǔ
V
OUT
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
0
4
BP10 AND BP5
SLVS612 − APRIL 2006
600
500
R4
V
TRKIN
Figure 1. Tracking Configuration, V
SWITCHING FREQUENCY
TIMING RESISTANCE
R5
vs
TPS40056PWP
EA_REF
4
5
SGND
6
SS
7
VFB
8 9PGNDCOMP
HDRV
SW
BP10
LDRV
13
12
11
10
10
+
V
OUT
R3
R1
UDG−06020
OUT
Tracks V
R6
TRKIN
vs
INPUT VOLTAGE
9 8
BP10
400
300
200
− Timing Resistance − k T
R
100
0
0
200 400 600 800 100
fSW − Switching Frequency − kHz
Figure 2
7
6
5 4
− Output Voltage − V 3
OUT
V
2
1 0
2
6481210 1
VIN − Input Voltage − V
Figure 3
BP5
8
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(3)
(4)
SLVS612 − APRIL 2006
APPLICATION INFORMATION
BP5 AND BP10 INTERNAL VOLTAGE REGULATORS
Start-up characteristics of the BP5 and BP10 regulators are shown in Figure 2. Slight variations in the BP5 occurs dependent upon the switching frequency. Variation in the BP10 regulation characteristics is also based on the load presented by switching the external MOSFETs.
SELECTING THE INDUCTOR VALUE
The inductor value determines the magnitude of ripple current in the output capacitors as well as the load current at which the converter enters discontinuous mode. Too large an inductance results in lower ripple current but is physically larger for the same load current. Too small an inductance results in larger ripple currents and a greater number of (or more expensive output capacitors for) the same output ripple voltage requirement. A good compromise is to select the inductance value such that the converter doesn’t enter discontinuous mode until the load approximated somewhere between 10% and 30% of the rated output. The inductance value is described in equation (3).

where:.
D V
O
ǒ
VIN* V
L +
VIN DI f
is the output voltage
Ǔ
V
O
SW
O
(Henries)
D ∆I is the peak-to-peak inductor current
CALCULATING THE OUTPUT CAPACITANCE
The output capacitance depends on the output ripple voltage requirement, output ripple current, as well as any output voltage deviation requirement during a load transient.
The output ripple voltage is a function of both the output capacitance and capacitor ESR. The worst case output ripple is described in equation (4).
8 C
1
O
f
SW
Ǔ
V
ƫ
P*P
DV + DI
The output ripple voltage is typically between 90% and 95% due to the ESR component. The output capacitance requirement typically increases in the presence of a load transient requirement. During
a step load, the output capacitance must provide energy to the load (light to heavy load step) or absorb excess inductor energy (heavy to light load step) while maintaining the output voltage within acceptable limits. The amount of capacitance depends on the magnitude of the load step, the speed of the loop and the size of the inductor.
ESR )
ƪ
ǒ
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
(5)
(6)
(7)
(8)
(9)
SLVS612 − APRIL 2006
APPLICATION INFORMATION
Stepping the load from a heavy load to a light load results in an output overshoot. Excess energy stored in the inductor must be absorbed by the output capacitance. The energy stored in the inductor is described in equation (5).
1
E
+
L I2(Joules)
L
2
where:
2
I
+
where:
D I D I
Energy in the capacitor is described in equation (7).
where:
where:
D V D V
Substituting equation (6) into equation (5), then substituting equation (8) into equation (7), then setting equation (7) equal to equation (5), and then solving for C
is the output current under heavy load conditions
OH
is the output current under light load conditions
OL
E
+
C
2
V
+
is the final peak capacitor voltage
f
is the initial capacitor voltage
i
+
C
O
2
ǒ
Ǔ
ƪ
I
*
OH
1
C V2(Joules)
2
2
ǒ
Ǔ
ƪ
V
*
f
ǒ
ƪ
I
L
ǒ
ƪ
V
OH
Ǔ
f
2
ǒ
Ǔ
ǒ
(
ƫ
ƫ
V
ǒ
I
Ǔ
i
ǒ
Volts
OL
2
ƫ
Amperes
2
2
Ǔ
ƫ
I
OL
2
ǒ
Ǔ
V
i
2
Ǔ
*
2
ǒ
*
)
Ǔ
(Farads)
2
Ǔ
yields the capacitance described in equation (9).
O
10
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