Texas Instruments TPIC6B273DWR, TPIC6B273DW, TPIC6B273N Datasheet
TPIC6B273
POWER LOGIC OCTAL D-TYPE LATCH
SLIS031 – APRIL 1994 – REVISED JUL Y 1995
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Low r
DS(on)
...5 Ω Typical
D
Avalanche Energy ...30 mJ
D
Eight Power DMOS-Transistor Outputs of
150-mA Continuous Current
D
500-mA Typical Current-Limiting Capability
D
Output Clamp Voltage . . . 50 V
D
Low Power Consumption
description
The TPIC6B273 is a monolithic, high-voltage,
medium-current, power logic octal D-type latch
with DMOS-transistor outputs designed for use in
systems that require relatively high load power.
The device contains a built-in voltage clamp on
the outputs for inductive transient protection.
Power driver applications include relays, solenoids, and other medium-current or high-voltage
loads.
The TPIC6B273 contains eight positive-edgetriggered D-type flip-flops with a direct clear input.
Each flip-flop features an open-drain power
DMOS-transistor output.
When clear (CLR
) is high, information at the D
inputs meeting the setup time requirements is
transferred to the DRAIN outputs on the positivegoing edge of the clock (CLK) pulse. Clock
triggering occurs at a particular voltage level and
is not directly related to the transition time of the
positive-going pulse. When the clock input (CLK)
is at either the high or low level, the D input signal
has no effect at the output. An asynchronous CLR
is provided to turn all eight DMOS-transistor
outputs off. When data is low for a given output,
the DMOS-transistor output is off. When data is
high, the DMOS-transistor output has sink-current
capability .
Outputs are low-side, open-drain DMOS
transistors with output ratings of 50 V and 150-mA
continuous sink-current capability. Each output
provides a 500-mA typical current limit at
T
C
= 25°C. The current limit decreases as the
junction temperature increases for additional
device protection.
The TPIC6B273 is characterized for operation over the operating case temperature range of –40°C to 125°C.
Copyright 1997, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
CLR
D1
D2
DRAIN1
DRAIN2
DRAIN3
DRAIN4
D3
D4
GND
V
CC
D8
D7
DRAIN8
DRAIN7
DRAIN6
DRAIN5
D6
D5
CLK
DW OR N PACKAGE
(TOP VIEW)
logic symbol
†
R
1
11
CLK
C1
DRAIN1
4
DRAIN2
5
DRAIN3
6
DRAIN4
7
DRAIN5
14
DRAIN6
15
DRAIN7
16
DRAIN8
17
CLR
†
This symbol is in accordance with ANSI/IEEE Standard 91-1984
and IEC Publication 617-12.
INPUTS
OUTPUT
L
H
H
H
FUNCTION TABLE
(each channel)
CLK D
X
↑
↑
L
X
H
L
X
H
L
H
Latched
CLR
DRAIN
H = high level, L = low level, X = irrelevant
1D
2
D1
3
D2
8
D3
9
D4
12
D5
13
D6
18
D7
19
D8
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
TPIC6B273
POWER LOGIC OCTAL D-TYPE LATCH
SLIS031 – APRIL 1994 – REVISED JUL Y 1995
2
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
logic diagram (positive logic)
CLK
11
CLR
1
C1
CLR
1D
D1
2
DRAIN1
4
C1
CLR
1D
D2
3
DRAIN2
5
C1
CLR
1D
D3
8
DRAIN3
6
C1
CLR
1D
9
DRAIN4
7
C1
CLR
1D
D5
12
DRAIN5
14
C1
CLR
1DD6
13
DRAIN6
15
C1
CLR
1DD7
18
DRAIN7
16
C1
CLR
1D
D8
19
DRAIN8
17
D4
10
GND
TPIC6B273
POWER LOGIC OCTAL D-TYPE LATCH
SLIS031 – APRIL 1994 – REVISED JUL Y 1995
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
schematic of inputs and outputs
EQUIVALENT OF EACH INPUT TYPICAL OF ALL DRAIN OUTPUTS
V
CC
Input
GND
GND
DRAIN
50 V
20 V
25 V
12 V
absolute maximum ratings over recommended operating case temperature range (unless
otherwise noted)
†
Logic supply voltage, VCC (see Note 1) 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Logic input voltage range, VI –0.3 V to 7 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power DMOS drain-to-source voltage, VDS (see Note 2) 50 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous source-to-drain diode anode current 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed source-to-drain diode anode current (see Note 3) 1 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed drain current, each output, all outputs on, I
D
, T
C
= 25°C (see Note 3) 500 mA. . . . . . . . . . . . . . . . . . .
Continuous drain current, each output, all outputs on, ID, T
C
= 25°C 150 mA. . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak drain current single output, IDM,T
C
= 25°C (see Note 3) 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single-pulse avalanche energy, E
AS
(see Figure 4) 30 mJ. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Avalanche current, IAS (see Note 4) 500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating virtual junction temperature range, TJ –40°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating case temperature range, TC –40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†
Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTES: 1. All voltage values are with respect to GND.
2. Each power DMOS source is internally connected to GND.
3. Pulse duration ≤ 100 µs and duty cycle ≤ 2%.
4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 200 mH, IAS = 0.5 A (see Figure 4).
DISSIPATION RATING TABLE
PACKAGE
TC ≤ 25°C
POWER RATING
DERATING FACTOR
ABOVE TC = 25°C
TC = 125°C
POWER RATING
DW 1389 mW 11.1 mW/°C 278 mW
N 1050 mW 10.5 mW/°C 263 mW
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