TEXAS INSTRUMENTS TPIC5223L Technical data

TPIC5223L

2-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL

POWER DMOS ARRAY

SLIS043A – NOVEMBER 1994 – REVISED SEPTEMBER 1995

GND

D PACKAGE

(TOP VIEW)

1
2
3
4

8
7
6
5

DRAIN1
GATE1
SOURCE2
NC

D

Low r

DS(on)

D

Voltage Output...60 V

D

Input Protection Circuitry...18 V

D

Pulsed Current...3 A Per Channel

D

Extended ESD Capability...4000 V

D

Direct Logic-Level Interface

. . . 0.38 Ω Typ

description

SOURCE1

GATE2

DRAIN2

NC – No internal connection

The TPIC5223L is a monolithic gate-protected logic-level power DMOS array that consists of two electrically
isolated independent N-channel enhancement-mode DMOS transistors. Each transistor features integrated
high-current zener diodes (Z

CXa

and Z

) to prevent gate damage in the event that an overstress condition

CXb

occurs. These zener diodes also provide up to 4000 V of ESD protection when tested using the human-body
model of a 100-pF capacitor in series with a 1.5-kΩ resistor.

The TPIC5223L is offered in a standard eight-pin small-outline surface-mount (D) package and is characterized
for operation over the case temperature of –40°C to 125°C.

schematic

GATE1

Z

Z

7

C1b

C1a

DRAIN1

Q1

8

D1

Z1

GATE2

3

Z
Z

C2b
C2a

DRAIN2

Q2

4

D2

Z2

2

SOURCE1

NOTE A: For correct operation, no terminal may be taken below GND.

PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.

1 6

GND

SOURCE2

Copyright  1995, Texas Instruments Incorporated

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

1

TPIC5223L
2-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL
POWER DMOS ARRAY

SLIS043A – NOVEMBER 1994 – REVISED SEPTEMBER 1995

absolute maximum ratings over operating case temperature range (unless otherwise noted)

Drain-to-source voltage, V

60 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

DS

†

Source-to-GND voltage 100 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Drain-to-GND voltage 100 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Gate-to-source voltage range, V
Continuous drain current, each output, T
Continuous source-to-drain diode current, T
Pulsed drain current, each output, I
Continuous gate-to-source zener diode current, T
Pulsed gate-to-source zener-diode current, T
Single-pulse avalanche energy, E
Continuous total power dissipation, T
Operating virtual junction temperature range, T
Operating case temperature range, T
Storage temperature range, T

–9 V to 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

GS

max

AS

–65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

stg

= 25°C 1 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

= 25°C 1 A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

, TC = 25°C (see Note 1 and Figure 15) 3 A. . . . . . . . . . . . . . . . . . . . .

= 25°C ±50 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

= 25°C ±500 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

, TC = 25°C (see Figures 4 and 16) 108 mJ. . . . . . . . . . . . . . . . . . . . . . .

= 25°C (see Figure 15) 0.95 W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

–40°C to 125°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

C

–40°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

J

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

†

Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTE 1: Pulse duration = 10 ms, duty cycle = 2%

2

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

I

Zero-gate-voltage drain current

DS

,

A

I

Leakage current, drain-to-GND

V

V

A

r

Static drain-to-source on-state resistance

D

,

Ω

F

trrReverse-recovery time

ns

V

GS

g

di/dt

100 A/µs

QRRTotal diode charge

See Figures 1 and 14

nC

2-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL

SLIS043A – NOVEMBER 1994 – REVISED SEPTEMBER 1995

electrical characteristics, TC = 25°C (unless otherwise noted)

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

V

(BR)DSX

V

GS(th)

V

(BR)GS

V

(BR)SG

V

(BR)

V

DS(on)

V

F(SD)

V

F

DSS

I

GSSF

I

GSSR

lkg

DS(on)

g

fs

C

iss

C

oss

C

rss

NOTES: 2. Technique should limit TJ – TC to 10°C maximum.

Drain-to-source breakdown voltage ID = 250 µA, VGS = 0 60 V
Gate-to-source threshold voltage
Gate-to-source breakdown voltage IGS = 250 µA 18 V

Source-to-gate breakdown voltage ISG = 250 µA 9 V
Reverse drain-to-GND breakdown voltage

(across D1, D2)
Drain-to-source on-state voltage

Forward on-state voltage, source-to-drain

Forward on-state voltage, GND-to-drain

Forward-gate current, drain short circuited to source VGS = 15 V, VDS = 0 20 200 nA
Reverse-gate current, drain short circuited to source VSG = 5 V, VDS = 0 10 100 nA

Forward transconductance
Short-circuit input capacitance, common source 150 190

Short-circuit output capacitance, common source
Short-circuit reverse transfer capacitance,

common source

3. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts.

ID = 1 mA,
See Figure 5

Drain-to-GND current = 250 µA 100 V
ID = 1 A,

See Notes 2 and 3
IS = 1 A,

VGS = 0 (Z1, Z2),
See Notes 2 and 3 and Figure 12

ID = 1 A (D1, D2),
See Notes 2 and 3

V

= 48 V,

VGS = 0

= 48

DGND

VGS = 5 V,
I

= 1 A,
See Notes 2 and 3
and Figures 6 and 7

VDS = 15 V, ID = 500 mA,
See Notes 2 and 3 and Figure 9

VDS = 25 V, VGS = 0,
f = 1 MHz, See Figure 11

TPIC5223L

POWER DMOS ARRAY

VDS = V

VGS = 5 V,

TC = 25°C 0.05 1
TC = 125°C 0.5 10

TC = 25°C 0.05 1
TC = 125°C 0.5 10

TC = 25°C 0.38 0.43

TC = 125°C 0.61 0.65

GS,

1.5 2.05 2.2 V

0.375 0.425 V

0.85 1.2 V

3 V

1.2 1.49 S

100 125

40 50

µ

µ

p

source-to-drain and GND-to-drain diode characteristics, TC = 25°C

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

IS = 500 mA,

= 0,

See Fi

ures 1 and 14

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265

VDS = 48 V,

=

Z1 and Z2 50
D1 and D2 210

,

Z1 and Z2
D1 and D2 800

50

3

TPIC5223L

DD

,

L

,

r1

,

ns

See Figure 3

nH

2-CHANNEL INDEPENDENT GATE-PROTECTED LOGIC-LEVEL
POWER DMOS ARRAY

SLIS043A – NOVEMBER 1994 – REVISED SEPTEMBER 1995

resistive-load switching characteristics, TC = 25°C

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

t

d(on)

t

d(off)

t

r1

t

f2

Q
Q
Q
L

D

L

S

R

thermal resistance

R
R
R

NOTES: 4. Package mounted on an FR4 printed-circuit board with no heatsink.

Turn-on delay time 34 70
Turn-off delay time
Rise time
Fall time 15 30
Total gate charge

g

Threshold gate-to-source charge

gs(th)

Gate-to-drain charge

gd

Internal drain inductance 5
Internal source inductance 5
Internal gate resistance 0.25 Ω

g

PARAMETER TEST CONDITIONS MIN TYP MAX UNIT

Junction-to-ambient thermal resistance See Notes 4 and 7 130

θJA

Junction-to-board thermal resistance See Notes 5 and 7 78.6

θJB

Junction-to-pin thermal resistance See Notes 6 and 7 34

θJP

5. Package mounted on a 24 in2, 4-layer FR4 printed-circuit board.

6. Package mounted in intimate contact with infinite heatsink.

7. All outputs with equal power

V

= 25 V, R

tf1 = 10 ns,

VDS = 48 V,

= 50 Ω,t

See Figure 2

ID = 500 mA, VGS = 5 V,

= 10 ns,

20 40
28 55

3.1 3.8

0.5 0.6

1.9 2.3

nC

°C/W

PARAMETER MEASUREMENT INFORMATION

1.5
VDS = 48 V
VGS = 0

1

TJ = 25°C
Z1, and Z2

0.5

0

– 0.5

– 1

– 1.5

– Source-to-Drain Diode Current – AI

S

– 2

– 2.5

0 50 100 150 200 250 300 350 400 450 500

†

IRM = maximum recovery current

‡

The above waveform is representative of D1 and D2 in shape only.

Figure 1. Reverse-Recovery-Current Waveform of Source-to-Drain Diode

‡

Reverse di/dt = 100 A/µs

Shaded Area = Q

I

t

rr(SD)

RM

Time – ns

25% of I

RR

†

RM

†

4

POST OFFICE BOX 655303 • DALLAS, TEXAS 75265