TEXAS INSTRUMENTS TPA6205A1 Technical data

ZQV
DRB
DGN
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SLOS490A – JULY 2006 – REVISED AUGUST 2006
1.25-W MONO FULLY DIFFERENTIAL AUDIO POWER AMPLIFIER WITH 1.8-V INPUT LOGIC THRESHOLDS

FEATURES APPLICATIONS

1.25 W Into 8 From a 5-V Supply at
THD = 1% (Typical)
Shutdown Pin has 1.8V Compatible
Thresholds
Low Supply Current: 1.7mA Typical
Shutdown Current < 10 µ A
Only Five External Components
Improved PSRR (90 dB) and Wide Supply
Voltage (2.5V to 5.5V) for Direct Battery Operation
Fully Differential Design Reduces RF
Rectification
Improved CMRR Eliminates Two Input
Coupling Capacitors
C
(BYPASS)
Is Optional Due to Fully
Differential Design and High PSRR
Available in 3 mm x 3 mm QFN Package
(DRB)
Available in an 8-Pin PowerPAD™ MSOP
(DGN)
Avaliable in a 2 mm x 2 mm MicroStar
Junior™ BGA Package (ZQV)
Designed for Wireless Handsets, PDAs, and
other mobile devices
Compatible with Low Power (1.8V Logic) I/O
Threshold control signals

DESCRIPTION

The TPA6205A1 is a 1.25-W mono fully differential amplifier designed to drive a speaker with at least 8- impedance while consuming less than 37 mm (ZQV package option) total printed-circuit board (PCB) area in most applications. This device operates from 2.5 V to 5.5 V, drawing only 1.7 mA of quiescent supply current. The TPA6205A1 is available in the space-saving 2 mm x 2 mm MicroStar Junior™ BGA package, and the space saving 3 mm x 3 mm QFN (DRB) package.
Features like 85-dB PSRR from 90 Hz to 5 kHz, improved RF-rectification immunity, and small PCB area makes the TPA6205A1 ideal for wireless handsets. A fast start-up time of 4 µ s with minimal pop makes the TPA6205A1 ideal for PDA applications.
TPA6205A1
2
PowerPAD, MicroStar Junior are trademarks of Texas Instruments.
PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright © 2006, Texas Instruments Incorporated
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TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
ORDERING INFORMATION
PACKAGED DEVICES
MicroStar Junior™ QFN MSOP
(ZQV) (DRB) (DGN)
Device TPA6205A1ZQVR TPA6205A1DRB TPA6205A1DGN
Symbolization AANI AAOI AAPI
(1) The ZQV packages are only available taped and reeled. The suffix R designates taped and reeled parts. (2) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI
website at www.ti.com .

ABSOLUTE MAXIMUM RATINGS

over operating free-air temperature range unless otherwise noted
V
Supply voltage –0.3 V to 6 V
DD
V
Input voltage INx and SHUTDOWN pins –0.3 V to V
I
Continuous total power dissipation See Dissipation Rating Table
T
Operating free-air temperature –40 ° C to 85 ° C
A
T
Junction temperature –40 ° C to 125 ° C
J
T
Storage temperature –65 ° C to 85 ° C
stg
Lead temperature 1,6 mm (1/16 Inch) from case for 10 seconds
(1) Stresses beyond those listed under "absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
ZQV, DRB, DGN 260 ° C
(1)
(1) (2)
UNIT
+ 0.3 V
DD

RECOMMENDED OPERATING CONDITIONS

MIN TYP MAX UNIT
V
Supply voltage 2.5 5.5 V
DD
V
High-level input voltage SHUTDOWN 1.15 V
IH
V
Low-level input voltage SHUTDOWN 0.50 V
IL
V
Common-mode input voltage V
IC
T
Operating free-air temperature –40 85 ° C
A
Z
Load impedance 6.4 8
L
= 2.5 V, 5.5 V, CMRR 60 dB 0.5 VDD–0.8 V
DD

DISSIPATION RATINGS

PACKAGE DERATING FACTOR
ZQV 885 mW 8.8 mW/ ° C 486 mW 354 mW DGN 2.13 W 17.1 mW/ ° C 1.36 W 1.11 W DRB 2.7 W 21.8 mW/ ° C 1.7 W 1.4 W
TA≤ 25 ° C TA= 70 ° C TA= 85 ° C
POWER RATING POWER RATING POWER RATING
2
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TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006

ELECTRICAL CHARACTERISTICS

TA= 25 ° C, Gain = 1 V/V
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|V PSRR Power supply rejection ratio V
CMRR Common-mode rejection ratio dB
V
V
|IIH| High-level input current V |IIL| Low-level input current V I
DD
I
DD(SD)
Output offset voltage (measured
| VI= 0 V, V
OO
differentially)
= 2.5 V to 5.5 V –90 –70 dB
DD
V
= 3.6 V to 5.5 V, VIC= 0.5 V to VDD–0.8 –70 –65
DD
V
= 2.5 V, VIC= 0.5 V to 1.7 V –62 –55
DD
Low-level output voltage V
OL
High-level output voltage V
OH
Supply current V Supply current in shutdown
mode
RL= 8 , V V
= 0 V or V
IN–
RL= 8 , V V
= 0 V or V
IN–
= 5.5 V, VI= 5.8 V 1.2 µ A
DD
= 5.5 V, VI= –0.3 V 1.2 µ A
DD
= 2.5 V to 5.5 V, No load, SHUTDOWN = V
DD
SHUTDOWN = VIL, V
= 2.5 V to 5.5 V 9 mV
DD
= VDD,
IN+
= 0 V, V
IN+
= VDD,
IN+
= 0 V, V
IN+
DD
V
= 5.5 V 0.30 0.46
DD
= 3.6 V 0.22 V
= V
IN–
DD
= V
IN–
DD
DD
V
= 2.5 V 0.19 0.26
DD
V
= 5.5 V 4.8 5.12
DD
= 3.6 V 3.28 V
DD
V
= 2.5 V 2.1 2.24
DD
IH
1.7 2 mA
= 2.5 V to 5.5 V, No load 0.01 0.9 µ A

OPERATING CHARACTERISTICS

TA= 25 ° C, Gain = 1 V/V, RL= 8
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V
= 5 V 1.25
DD
P
THD+N V
k
SVR
SNR Signal-to-noise ratio V
V
CMRR Resistor tolerance = 0.1%, dB
Z
I
Z
O
Output power THD + N = 1%, f = 1 kHz V
O
V
= 5 V, PO= 1 W, f = 1 kHz 0.06% Total harmonic distortion plus noise
Supply ripple rejection C ratio Inputs ac-grounded with CI= 2 µ F V
Output voltage noise f = 20 Hz to 20 kHz µ V
n
Common-mode rejection ratio
DD
= 3.6 V, PO= 0.5 W, f = 1 kHz 0.07%
DD
V
= 2.5 V, PO= 200 mW, f = 1 kHz 0.08%
DD
C
(BYPASS)
Inputs ac-grounded with CI= 2 µ F V
(BYPASS)
C
(BYPASS)
Inputs ac-grounded with CI= 2 µ F V
DD
V
DD
Gain = 4V/V, V
= 0.47 ° F, V
= 0.47 µ F, V
= 0.47 µ F, V
= 3.6 V to 5.5 V, f = 217 Hz to 2 kHz,
DD
= 2.5 V to 3.6 V, f = 217 Hz to 2 kHz,
DD
= 2.5 V to 5.5 V, f = 40 Hz to 20 kHz,
DD
= 5 V, PO= 1 W 104 dB
= 2.5 V to 5.5 V, f = 20 Hz to 1 kHz –85
= 200 mV
ICM
PP
= 3.6 V 0.63 W
DD
V
= 2.5 V 0.3
DD
= 200 mV
RIPPLE
= 200 mV
RIPPLE
= 200 mV
RIPPLE
PP
PP
PP
No weighting 17 A weighting 13
f = 20 Hz to 20 kHz –74
Input impedance 2 M Output impedance Shutdown mode >10k Shutdown attenuation f = 20 Hz to 20 kHz, RF= RI= 20 k -80 dB
-87
-82 dB
–74
RMS
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(SIDEVIEW)
SHUTDOWN
IN+
V
DD
V
O+
GND
V
O-
IN-
A B C
1 2 3
BYPASS
8
SHUTDOWN
BYPASS
IN+
IN-
V
O-
GND
V
DD
V
O+
7
6
5
1
2
3
4
7
6
5
1
2
3
SHUTDOWN
BYPASS
IN+
IN-
V
O-
GND
V
DD
V
O+
4
8
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
MicroStar Junior™ (ZQV) PACKAGE
(TOP VIEW)
8-PIN QFN (DRB) PACKAGE
(TOP VIEW)
8-PIN MSOP (DGN) PACKAGE
(TOP VIEW)
Terminal Functions
TERMINAL
NAME ZQV
DRB,
DGN
BYPASS C1 2 I Mid-supply voltage. Adding a bypass capacitor improves PSRR. GND B2 7 I High-current ground IN- C3 4 I Negative differential input IN+ C2 3 I Positive differential input SHUTDOWN B1 1 I Shutdown terminal (active low logic) V
DD
V
O+
V
O-
Thermal Pad
A3 6 I Supply voltage terminal B3 5 O Positive BTL output A1 8 O Negative BTL output
N/A Connect to ground. Thermal pad must be soldered down in all applications to properly secure
I/O DESCRIPTION
device on the PCB.
4
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Table of Graphs

P
P
CMRR Common-mode rejection ratio
I
DD
Output power
O
Power dissipation vs Output power 4, 5
D
Maximum ambient temperature vs Power dissipation 6
Total harmonic distortion + noise vs Frequency 9, 10, 11, 12
Supply voltage rejection ratio vs Frequency 14, 15, 16, 17 Supply voltage rejection ratio vs Common-mode input voltage 18 GSM Power supply rejection vs Time 19 GSM Power supply rejection vs Frequency 20
Closed loop gain/phase vs Frequency 23 Open loop gain/phase vs Frequency 24 Supply current vs Supply voltage 25 Start-up time vs Bypass capacitor 26
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006

TYPICAL CHARACTERISTICS

FIGURE
vs Supply voltage 1 vs Load resistance 2, 3
vs Output power 7, 8
vs Common-mode input voltage 13
vs Frequency 21 vs Common-mode input voltage 22
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0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
8 13 18 23 28
VDD = 5 V
VDD = 3.6 V
VDD = 2.5 V
R
L
- Load Resistance -
- Output Power - WP O
f = 1 kHz THD+N = 10% Gain = 1 V/V
32
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2.5 3 3.5 4 4.5 5
V
DD
- Supply Voltage - V
- Output Power - WP
O
RL = 8 f = 1 kHz Gain = 1 V/V
THD+N = 1%
THD+N = 10%
0
0.2
0.4
0.6
0.8
1
1.2
1.4
8 13 18 23 28
VDD = 5 V
VDD = 3.6 V
VDD = 2.5 V
R
L
- Load Resistance -
- Output Power - WP O
f = 1 kHz THD+N = 1% Gain = 1 V/V
32
0
10
20
30
40
50
60
70
80
90
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
PD-PowerDissipation-W
Maximum AmbientTemperature- C
o
ZQVPackageOnly
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0 0.2 0.4 0.6 0.8
8
16
PO - Output Power - W
- Power Dissipation - WP D
VDD = 3.6 V
0 0.2 0.4 0.6 0.8 1 1.2 1.4
8
16
PO - Output Power - W
- Power Dissipation - WP D
VDD = 5 V
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VDD = 5 V CI = 2 µF RL = 8 C
(Bypass)
= 0 to 1 µF
Gain = 1 V/V
0.001
10
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
20 20 k100 200 1 k 2 k 10 k
f - Frequency - Hz
THD+N - Total Harmonic Distortion + Noise - %
50 mW
250 mW
1 W
10
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10 m 3100 m 1 2
PO - Output Power - W
THD+N - Total Harmonic Distortion + Noise - %
2.5 V
3.6 V
5 V
RL = 8 Ω, f = 1 kHz C
(Bypass)
= 0 to 1 µF
Gain = 1 V/V
10
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10 m 100 m 1 2
PO - Output Power - W
THD+N - Total Harmonic Distortion + Noise - %
2.5 V
5 V
3.6 V
RL = 16 f = 1 kHz C
(Bypass)
= 0 to 1 µF
Gain = 1 V/V
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
OUTPUT POWER OUTPUT POWER OUTPUT POWER
vs vs vs
SUPPLY VOLTAGE LOAD RESISTANCE LOAD RESISTANCE
Figure 1. Figure 2. Figure 3.

TYPICAL CHARACTERISTICS

POWER DISSIPATION POWER DISSIPATION TEMPERATURE
MAXIMUM AMBIENT
vs vs vs
OUTPUT POWER OUTPUT POWER POWER DISSIPATION
Figure 4. Figure 5. Figure 6.
TOTAL HARMONIC DISTORTION + TOTAL HARMONIC DISTORTION + TOTAL HARMONIC DISTORTION +
NOISE NOISE NOISE
vs vs vs
OUTPUT POWER OUTPUT POWER FREQUENCY
6
Figure 7. Figure 8. Figure 9.
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0.001
10
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
20 20 k50 100 200 500 1 k 2 k 5 k 10 k
f - Frequency - Hz
THD+N - Total Harmonic Distortion + Noise - %
25 mW
125 mW
500 mW
VDD = 3.6 V CI = 2 µF RL = 8 C
(Bypass)
= 0 to 1 µF
Gain = 1 V/V
0.001
10
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
20 20 k50 100 200 500 1 k 2 k 5 k 10 k
f - Frequency - Hz
THD+N - Total Harmonic Distortion + Noise - %
15 mW
200 mW
75 mW
VDD = 2.5 V CI = 2 µF RL = 8 C
(Bypass)
= 0 to 1 µF
Gain = 1 V/V
VDD = 3.6 V CI = 2 µF RL = 16 C
(Bypass)
= 0 to 1 µF
Gain = 1 V/V
0.001
10
0.002
0.005
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
20 20 k50 100 200 500 1 k 2 k 5 k 10 k
f - Frequency - Hz
THD+N - Total Harmonic Distortion + Noise - %
25 mW
250 mW
125 mW
-100
0
-90
-80
-70
-60
-50
-40
-30
-20
-10
20 20 k50 100 200 500 1 k 2 k 5 k 10 k
VDD = 3.6 V
VDD = 5 V
VDD =2. 5 V
f - Frequency - Hz
- Supply Voltage Rejection Ratio - dBk SVR
CI = 2 µF RL = 8 C
(Bypass)
= 0.47 µF
V
p-p
= 200 mV Inputs ac-Grounded Gain = 1 V/V
-100
0
-90
-80
-70
-60
-50
-40
-30
-20
-10
20 20 k50 100 200 500 1 k 2 k 5 k 10 k
f - Frequency - Hz
- Supply Voltage Rejection Ratio - dBk SVR
VDD = 3.6 V
VDD = 5 V
VDD =2. 5 V
Gain = 5 V/V CI = 2 µF RL = 8 C
(Bypass)
= 0.47 µF
V
p-p
= 200 mV
Inputs ac-Grounded
0.01
0.10
1
10
0 0.5 1 1.5 2 2.5 3 3.5
VDD = 2.5 V
VDD = 3.6 V
f = 1 kHz PO = 200 mW
V
IC
- Common Mode Input Voltage - V
THD+N - Total Harmonic Distortion + Noise - %
-90
-80
-70
-60
-50
-40
-30
-20
-10
0 1 2 3 4 5
V
IC
- Common Mode Input Voltage - V
f = 217 Hz C
(Bypass)
= 0.47 µF
RL = 8 Gain = 1 V/V
VDD = 2.5 V
VDD = 3.6 V
VDD = 5 V
- Supply Voltage Rejection Ratio - dBk SVR
-100
0
-90
-80
-70
-60
-50
-40
-30
-20
-10
20 20 k50 100 200 500 1 k 2 k 5 k 10 k
f - Frequency - Hz
- Supply Voltage Rejection Ratio - dBk SVR
VDD =2. 5 V
VDD = 5 V
VDD = 3.6 V
CI = 2 µF RL = 8 Inputs Floating Gain = 1 V/V
VDD = 3.6 V CI = 2 µF RL = 8 Inputs ac-Grounded Gain = 1 V/V
-100
0
-90
-80
-70
-60
-50
-40
-30
-20
-10
20 20 k50 100 200 500 1 k 2 k 5 k 10 k
f - Frequency - Hz
- Supply Voltage Rejection Ratio - dBk SVR
C
(Bypass)
= 0.1 µF
C
(Bypass)
= 0
C
(Bypass)
= 0.47 µF
C
(Bypass)
= 1 µF
TYPICAL CHARACTERISTICS (continued)
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
TOTAL HARMONIC DISTORTION + TOTAL HARMONIC DISTORTION + TOTAL HARMONIC DISTORTION +
NOISE NOISE NOISE
vs vs vs
FREQUENCY FREQUENCY FREQUENCY
Figure 10. Figure 11. Figure 12.
TOTAL HARMONIC DISTORTION + SUPPLY VOLTAGE REJECTION SUPPLY VOLTAGE REJECTION
NOISE RATIO RATIO
vs vs vs
COMMON MODE INPUT VOLTAGE FREQUENCY FREQUENCY
SUPPLY VOLTAGE REJECTION SUPPLY VOLTAGE REJECTION SUPPLY VOLTAGE REJECTION
Figure 13. Figure 14. Figure 15.
RATIO RATIO RATIO
vs vs vs
FREQUENCY FREQUENCY COMMON MODE INPUT VOLTAGE
Figure 16. Figure 17. Figure 18.
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C1 Frequency
217.41 Hz C1 - Duty
20 % C1 High
3.598 V
C1 Pk-Pk 504 mV
Voltage - V
Ch1 100 mV/div Ch4 10 mV/div
2 ms/div
t - Time - ms
V
DD
V
O
f - Frequency - Hz
0
-50
-100
0 200 400 600 800 1k 1.2k
- Output Voltage - dBV
1.4k1.6k 1.8k 2k
-150
-150
-100
0
-50
V
O
- Supply Voltage - dBVV DD
VDD Shown in Figure 19 CI = 2 µF, C
(Bypass)
= 0.47 µF, Inputs ac-Grounded Gain = 1V/V
-100
0
-90
-80
-70
-60
-50
-40
-30
-20
-10
20 20 k50 100 200 500 1 k 2 k 5 k 10 k
f - Frequency - Hz
CMRR - Common Mode Rejection Ratio - dB
VDD = 2.5 V to 5 V VIC = 200 mV
p-p
RL = 8 Gain = 1 V/V
-70
-60
-50
-40
-30
-20
-10
0
10
20
30
40
10 100 10 k 100 k 1 M 10 M
-220
-180
-140
-100
-60
-20
20
60
100
140
180
220
1 k
f - Frequency - Hz
Gain - dB
Phase - Degrees
Gain
Phase
VDD = 3.6 V RL = 8 Gain = 1 V/V
-200
-150
-100
-50
0
50
100
150
200
100 1 k 10 k 100 k 1 M
-200
-150
-100
-50
0
50
100
150
200
f - Frequency - Hz
Gain - dB
Phase - Degrees
Gain
Phase
VDD = 3.6 V RL = 8
10 M
-100
-90
-80
-70
-60
-50
-40
-30
-20
-10
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
RL = 8 Gain = 1 V/V
V
IC
- Common Mode Input Voltage - V
CMRR - Common Mode Rejection Ratio - dB
VDD = 3.6 V
VDD = 5 V
VDD = 2.5 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
V
DD
- Supply Voltage - V
- Supply Current - mA I
DD
0
1
2
3
4
5
6
0 0.5 1 1.5 2
C
(Bypass)
- Bypass Capacitor - µF
Start-Up Time - ms
(1)
Start-Up time is the time it takes (from a low-to-high transition on SHUTDOWN) for the gain of the amplifier to reach -3 dB of the final gain.
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
GSM POWER SUPPLY GSM POWER SUPPLY
REJECTION REJECTION COMMON MODE REJECTION RATIO
vs vs vs
TIME FREQUENCY FREQUENCY
Figure 19. Figure 20. Figure 21.
TYPICAL CHARACTERISTICS (continued)
COMMON MODE REJECTION RATIO CLOSED LOOP GAIN/PHASE OPEN LOOP GAIN/PHASE
vs vs vs
COMMON MODE INPUT VOLTAGE FREQUENCY FREQUENCY
Figure 22. Figure 23. Figure 24.
SUPPLY CURRENT START-UP TIME
vs vs
SUPPLY VOLTAGE BYPASS CAPACITOR
(1)
8
Figure 25. Figure 26.
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APPLICATION INFORMATION

_
+
V
DD
V
O+
V
O-
GND
ToBattery
C
s
Bias
Circuitry
IN-
IN+
+
-
InFrom
DAC
SHUTDOWN
R
I
R
I
C
( )
BYPASS
(Optional)
R
F
R
F
FULLY DIFFERENTIAL AMPLIFIER
The TPA6205A1 is a fully differential amplifier with differential inputs and outputs. The fully differential amplifier consists of a differential amplifier and a common- mode amplifier. The differential amplifier ensures that the amplifier outputs a differential voltage that is equal to the differential input times the gain. The common-mode feedback ensures that the common-mode voltage at the output is biased around V voltage at the input.

Advantages of Fully Differential Amplifiers

Input coupling capacitors not required: A fully differential amplifier with good CMRR, like the TPA6205A1, allows the inputs to be biased at voltage other than mid-supply. For example, if a DAC has mid-supply lower than the mid-supply of the TPA6205A1, the common-mode feedback circuit adjusts for that, and the TPA6205A1 outputs are still biased at mid-supply of the TPA6205A1. The inputs of the TPA6205A1 can be biased from 0.5 V to V are biased outside of that range, input coupling capacitors are required.
/2 regardless of the common- mode
DD
- 0.8 V. If the inputs
DD
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
Mid-supply bypass capacitor, C required: The fully differential amplifier does not require a bypass capacitor. This is because any shift in the mid-supply affects both positive and negative channels equally and cancels at the differential output. However, removing the bypass capacitor slightly worsens power supply rejection ratio (k k
may be acceptable when an additional
SVR
), but a slight decrease of
SVR
component can be eliminated (see Figure 17 ).
Better RF-immunity: GSM handsets save power by turning on and shutting off the RF transmitter at a rate of 217 Hz. The transmitted signal is picked-up on input and output traces. The fully differential amplifier cancels the signal much better than the typical audio amplifier.

APPLICATION SCHEMATICS

Figure 27 through Figure 31 show application
schematics for differential and single-ended inputs. Typical values are shown in Table 1 .
Table 1. Typical Component Values
COMPONENT VALUE
R
I
R
F
C C C (1) C
(1)
(BYPASS) S I
(BYPASS)
is optional
10 k 10 k
0.22 µ F 1 µ F
0.22 µ F
(BYPASS)
, not
Figure 27. Typical Differential Input Application Schematic
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9
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_
+
V
DD
V
O+
V
O-
GND
ToBattery
C
s
Bias
Circuitry
IN-
IN+
+
-
IN
SHUTDOWN
R
I
R
I
R
F
R
F
C
I
C
I
C
( )
BYPASS
(Optional)
_
+
V
DD
V
O+
V
O-
GND
ToBattery
C
s
Bias
Circuitry
IN-
IN+
IN
SHUTDOWN
R
I
R
F
C
I
C
I
R
I
R
F
C
( )
BYPASS
(Optional)
_
+
GND
Bias
Circuitry
IN-
IN+
+
-
SHUTDOWN
R
I1
R
I1
R
F
R
F
C
( )
BYPASS
(Optional)
ToBattery
V
DD
V
O+
V
O-
C
S
C
I1
C
I1
R
I2
R
I2
C
I2
C
I2
+
-
Differential
Input2
Differential
Input1
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
Figure 28. Differential Input Application Schematic Optimized With Input Capacitors
Figure 29. Single-Ended Input Application Schematic
10
Figure 30. Application Schematic With TPA6205A1 Summing Two Differetial Inputs
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_
+
V
DD
V
O+
V
O-
GND
ToBattery
C
s
Bias
Circuitry
IN-
IN+
SHUTDOWN
R
I1
R
F
C
I1
C
P
R
P
R
F
C
( )
BYPASS
(Optional)
C
I2
R
I2
SingleEnded
Input1
SingleEnded
Input2
Gain − RF/R
I
f
c
+
1
2pRIC
I
–3 dB
f
c
C
I
+
1
2pRIf
c
SLOS490A – JULY 2006 – REVISED AUGUST 2006
Figure 31. Application Schematic With TPA6205A1 Summing Two Single-Ended Inputs
TPA6205A1

SELECTING COMPONENTS

Resistors (R
The input (R gain of the amplifier according to Equation 1 .
R
and R
F
graphs were taken with R Resistor matching is very important in fully
differential amplifiers. The balance of the output on the reference voltage depends on matched ratios of the resistors. CMRR, PSRR, and the cancellation of the second harmonic distortion diminishes if resistor mismatch occurs. Therefore, it is recommended to use 1% tolerance resistors or better to keep the performance optimized.
Bypass Capacitor (C
The internal voltage divider at the BYPASS pin of this device sets a mid-supply voltage for internal references and sets the output common mode voltage to V any noise into this pin and increases the k C
(BYPASS)
when the device is taken out of shutdown. The larger the capacitor, the slower the rise time. Although the output rise time depends on the bypass capacitor value, the device passes audio 4 µ s after taken out of shutdown and the gain is slowly ramped up based on C
(BYPASS)
To minimize pops and clicks, design the circuit so the impedance (resistance and capacitance) detected by both inputs, IN+ and IN-, is equal.
and RI)
F
) and feedback resistors (R
I
should range from 1 k to 100 k . Most
I
/2. Adding a capacitor to this pin filters
DD
= RI= 20 k .
F
BYPASS
) and Start-Up Time
also determines the rise time of V
.
) set the
F
(1)
SVR
and V
O+
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O-
Input Capacitor (C
)
I
The TPA6205A1 does not require input coupling capacitors if using a differential input source that is biased from 0.5 V to V
- 0.8 V. Use 1% tolerance
DD
or better gain-setting resistors if not using input coupling capacitors.
In the single-ended input application an input capacitor, CI, is required to allow the amplifier to bias the input signal to the proper dc level. In this case, C and R
form a high-pass filter with the corner
I
frequency determined in Equation 2 .
.
The value of C
is important to consider as it directly
I
affects the bass (low frequency) performance of the circuit. Consider the example where RIis 10 k and the specification calls for a flat bass response down to 100 Hz. Equation 2 is reconfigured as Equation 3 .
In this example, C
is 0.16 µ F, so one would likely
I
choose a value in the range of 0.22 µ F to 0.47 µ F. A further consideration for this capacitor is the leakage path from the input source through the input network (R
, CI) and the feedback resistor (R
I
) to the load.
F
I
(2)
(3)
11
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Gain 1 +
V
O
V
I1
+ *
R
F
R
I1
ǒ
V V
Ǔ
Gain 2 +
V
O
V
I2
+ *
R
F
R
I2
ǒ
V V
Ǔ
Gain 1 +
V
O
V
I1
+ *
R
F
R
I1
ǒ
V V
Ǔ
Gain 2 +
V
O
V
I2
+ *
R
F
R
I2
ǒ
V V
Ǔ
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
This leakage current creates a dc offset voltage at the input to the amplifier that reduces useful headroom, especially in high gain applications. For this reason, a ceramic capacitor is the best choice. When polarized capacitors are used, the positive side of the capacitor should face the amplifier input in most applications, as the dc level there is held at V
/2, which is likely higher than the source dc level.
DD
It is important to confirm the capacitor polarity in the application.
Decoupling Capacitor (C
The TPA6205A1 is a high-performance CMOS audio amplifier that requires adequate power supply decoupling to ensure the output total harmonic distortion (THD) is as low as possible. Power supply decoupling also prevents oscillations for long lead lengths between the amplifier and the speaker. For higher frequency transients, spikes, or digital hash on the line, a good low equivalent-series- resistance (ESR) ceramic capacitor, typically 0.1 µ F to 1 µ F, placed as close as possible to the device V works best. For filtering lower frequency noise signals, a 10- µ F or greater capacitor placed near the audio power amplifier also helps, but is not required in most applications because of the high PSRR of this device.
)
S
DD

SUMMING INPUT SIGNALS WITH THE TPA6205A1

Most wireless phones or PDAs need to sum signals at the audio power amplifier or just have two signal sources that need separate gain. The TPA6205A1 makes it easy to sum signals or use separate signal sources with different gains. Many phones now use the same speaker for the earpiece and ringer, where the wireless phone would require a much lower gain for the phone earpiece than for the ringer. PDAs and phones that have stereo headphones require summing of the right and left channels to output the stereo signal to the mono speaker.

Summing Two Differential Input Signals

Two extra resistors are needed for summing differential signals (a total of 10 components). The gain for each input source can be set independently (see Equation 4 and Equation 5 , and Figure 30 ).

Summing a Differential Input Signal and a Single-Ended Input Signal

Figure 31 shows how to sum a differential input
signal and a single-ended input signal. Ground noise can couple in through IN+ with this method. It is better to use differential inputs. To assure that each input is balanced, the single-ended input must be driven by a low-impedance source even if the input is not in use. Both input nodes must see the same impedance for optimum performance, thus the use of R
and CP.
P
(6)
(7)
Where
C
= C
P
R
lead
P
// C
I1
I2
= R
// R
I1
I2

USING LOW-ESR CAPACITORS

Low-ESR capacitors are recommended throughout this applications section. A real (as opposed to ideal) capacitor can be modeled simply as a resistor in series with an ideal capacitor. The voltage drop across this resistor minimizes the beneficial effects of the capacitor in the circuit. The lower the equivalent value of this resistance the more the real capacitor behaves like an ideal capacitor.

DIFFERENTIAL OUTPUT VERSUS SINGLE-ENDED OUTPUT

Figure 32 shows a Class-AB audio power amplifier
(APA) in a fully differential configuration. The TPA6205A1 amplifier has differential outputs driving both ends of the load. There are several potential benefits to this differential drive configuration, but initially consider power to the load. The differential drive to the speaker means that as one side is slewing up, the other side is slewing down, and vice versa. This in effect doubles the voltage swing on the load as compared to a ground referenced load. Plugging 2 × V voltage is squared, yields 4 × the output power from the same supply rail and load impedance (see
Equation 8 ).
into the power equation, where
O(PP)
(4)
(5)
12
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f
c
+
1
2pRLC
C
V
(rms)
+
V
O(PP)
2 2
Ǹ
Power +
V
(rms)
2
R
L
R
L
2x V
O(PP)
V
O(PP)
–V
O(PP)
V
DD
V
DD
R
L
C
C
V
O(PP)
V
O(PP)
V
DD
–3 dB
f
c
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
(9)
For example, a 68- µ F capacitor with an 8- speaker would attenuate low frequencies below 293 Hz. The BTL configuration cancels the dc offsets, which
(8)
eliminates the need for the blocking capacitors. Low-frequency performance is then limited only by the input network and speaker response. Cost and PCB space are also minimized by eliminating the bulky coupling capacitor.
Figure 32. Differential Output Configuration
In a typical wireless handset operating at 3.6 V, bridging raises the power into an 8- speaker from a singled-ended (SE, ground reference) limit of 200 mW to 800 mW. In sound power that is a 6-dB improvement—which is loudness that can be heard. In addition to increased power there are frequency response concerns. Consider the single-supply SE configuration shown in Figure 33 . A coupling capacitor is required to block the dc offset voltage from reaching the load. This capacitor can be quite large (approximately 33 µ F to 1000 µ F) so it tends to be expensive, heavy, occupy valuable PCB area, and have the additional drawback of limiting low-frequency performance of the system. This frequency-limiting effect is due to the high pass filter network created with the speaker impedance and the coupling capacitance and is calculated with
Equation 9 .
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Figure 33. Single-Ended Output and Frequency
Response
Increasing power to the load does carry a penalty of increased internal power dissipation. The increased dissipation is understandable considering that the BTL configuration produces 4 × the output power of the SE configuration.

FULLY DIFFERENTIAL AMPLIFIER EFFICIENCY AND THERMAL INFORMATION

Class-AB amplifiers are inefficient. The primary cause of these inefficiencies is voltage drop across the output stage transistors. There are two components of the internal voltage drop. One is the headroom or dc voltage drop that varies inversely to output power. The second component is due to the sinewave nature of the output. The total voltage drop can be calculated by subtracting the RMS value of the output voltage from V drop multiplied by the average value of the supply current, IDD(avg), determines the internal power dissipation of the amplifier.
. The internal voltage
DD
13
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V
(LRMS)
V
O
I
DD
I
DD(avg)
Efficiency of a BTL amplifier +
P
L
P
SUP
where:
P
L
+
VLrms
2
R
L
, and V
LRMS
+
V
P 2
Ǹ
, therefore, P
L
+
V
P
2
2R
L
PL = Power delivered to load P
SUP
= Power drawn from power supply
V
LRMS
= RMS voltage on BTL load RL = Load resistance VP = Peak voltage on BTL load IDDavg = Average current drawn from the power supply VDD = Power supply voltage
η
BTL
= Efficiency of a BTL amplifier
and
P
SUP
+ VDDIDDavg
and
IDDavg +
1
p
ŕ
p
0
V
P
R
L
sin(t) dt
+ *
1
p
V
P
R
L
[cos(t)]
p
0
+
2V
P
p R
L
Therefore,
P
SUP
+
2 VDDV
P
p R
L
substituting PL and P
SUP
into equation 6,
Efficiency of a BTL amplifier +
V
P
2
2 R
L
2 VDDV
P
p R
L
+
p V
P
4 V
DD
VP+ 2 PLR
L
Ǹ
where:
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
An easy-to-use equation to calculate efficiency starts Although the voltages and currents for SE and BTL out as being equal to the ratio of power from the are sinusoidal in the load, currents from the supply power supply to the power delivered to the load. To are very different between SE and BTL accurately calculate the RMS and average values of configurations. In an SE application the current power in the load and in the amplifier, the current waveform is a half-wave rectified shape, whereas in and voltage waveform shapes must first be BTL it is a full-wave rectified waveform. This means understood (see Figure 34 ). RMS conversion factors are different. Keep in mind
that for most of the waveform both the push and pull transistors are not on at the same time, which supports the fact that each amplifier in the BTL device only draws current from the supply for half the waveform. The following equations are the basis for calculating amplifier efficiency.
Figure 34. Voltage and Current Waveforms for
BTL Amplifiers
14
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Θ
JA
+
1
Derating Factor
+
1
0.0088
+ 113°CńW
h
BTL
+
p 2 PLR
L
Ǹ
4 V
DD
Therefore,
TAMax + TJMax * ΘJAP
Dmax
+ 125* 113(0.634)+ 53.3°C
P
Dmax
+
2 V
2
DD
p
2
R
L
Table 2. Efficiency and Maximum Ambient
Temperature vs Output Power in 5-V 8- BTL
Systems
Output Internal
Power Dissipation
(W) (W)
0.25 31.4 0.55 0.75 62
0.50 44.4 0.62 1.12 54
1.00 62.8 0.59 1.59 58
1.25 70.2 0.53 1.78 65
Efficiency From Ambient
(%) Supply Temperature
Power Max
(W) ( ° C)
Table 2 employs Equation 11 to calculate efficiencies
for four different output power levels. Note that the efficiency of the amplifier is quite low for lower power levels and rises sharply as power to the load is increased resulting in a nearly flat internal power dissipation over the normal operating range. Note that the internal dissipation at full output power is less than in the half power range. Calculating the efficiency for a specific system is the key to proper power supply design. For a 1.25-W audio system with 8- loads and a 5-V supply, the maximum draw on the power supply is almost 1.8 W.
A final point to remember about Class-AB amplifiers is how to manipulate the terms in the efficiency equation to the utmost advantage when possible. Note that in Equation 11 , V This indicates that as V
is in the denominator.
DD
goes down, efficiency
DD
goes up. A simple formula for calculating the maximum power
dissipated, P
, may be used for a differential
Dmax
output application:
P
for a 5-V, 8- system is 634 mW.
Dmax
The maximum ambient temperature depends on the heat sinking ability of the PCB system. The derating factor for the 2 mm x 2 mm Microstar Junior™ package is shown in the dissipation rating table. Converting this to θJA:
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
(13)
Given θJA, the maximum allowable junction
(11)
(12)
temperature, and the maximum internal dissipation, the maximum ambient temperature can be calculated with the following equation. The maximum recommended junction temperature for the TPA6205A1 is 125 ° C.
(14)
Equation 14 shows that the maximum ambient
temperature is 53.3 ° C at maximum power dissipation with a 5-V supply.
Table 2 shows that for most applications no airflow is
required to keep junction temperatures in the specified range. The TPA6205A1 is designed with thermal protection that turns the device off when the junction temperature surpasses 150 ° C to prevent damage to the IC. Also, using more resistive than 8- speakers dramatically increases the thermal performance by reducing the output current.

PCB LAYOUT

For the DRB (QFN/SON) and DGN (MSOP) packages, it is good practice to minimize the presence of voids within the exposed thermal pad interconnection. Total elimination is difficult, but the design of the exposed pad stencil is key. The stencil design proposed in the Texas Instruments application note "QFN/SON PCB Attachment" (SLUA271) enables out-gassing of the solder paste during reflow as well as regulating the finished solder thickness. Typically the solder paste coverage is approximately 50% of the pad area.
In making the pad size for the BGA balls, it is recommended that the layout use solder­mask-defined (SMD) land. With this method, the copper pad is made larger than the desired land area, and the opening size is defined by the opening in the solder mask material. The advantages normally associated with this technique include more closely controlled size and better copper adhesion to the laminate. Increased copper also increases the thermal performance of the IC. Better size control is the result of photo imaging the stencils for masks. Small plated vias should be placed near the center ball connecting ball B2 to the ground plane. Added plated vias and ground plane act as a heatsink and increase the thermal performance of the device.
Figure 35 shows the appropriate diameters for a 2
mm × 2 mm MicroStar Junior™ BGA layout.
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C1
C2
C3
B1
B3
A1
A3
0.25 mm 0.28 mm
0.38 mm
Solder Mask Paste Mask (Stencil)
Copper Trace
B2
VIAS to Ground Plane
TPA6205A1
SLOS490A – JULY 2006 – REVISED AUGUST 2006
It is very important to keep the TPA6205A1 external components very close to the TPA6205A1 to limit noise pickup. The TPA6205A1 evaluation module (EVM) layout is shown in the next section as a layout example.
Figure 35. MicroStar Junior™ BGA Recommended Layout
16
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PACKAGE OPTION ADDENDUM
www.ti.com
30-Jan-2007
PACKAGING INFORMATION
Orderable Device Status
TPA6205A1DGN ACTIVE MSOP-
(1)
Package
Type
Power
Package
Drawing
Pins Package
Qty
Eco Plan
DGN 8 80 Green (RoHS &
no Sb/Br)
PAD
TPA6205A1DGNG4 ACTIVE MSOP-
Power
DGN 8 80 Green (RoHS &
no Sb/Br)
PAD
TPA6205A1DGNR ACTIVE MSOP-
Power
DGN 8 2500 Green (RoHS &
no Sb/Br)
PAD
TPA6205A1DGNRG4 ACTIVE MSOP-
Power
DGN 8 2500 Green (RoHS &
no Sb/Br)
PAD
TPA6205A1DRBR ACTIVE SON DRB 8 3000 Green (RoHS &
no Sb/Br)
TPA6205A1DRBRG4 ACTIVE SON DRB 8 3000 Green (RoHS &
no Sb/Br)
TPA6205A1DRBT ACTIVE SON DRB 8 250 Green (RoHS &
no Sb/Br)
TPA6205A1DRBTG4 ACTIVE SON DRB 8 250 Green (RoHS &
no Sb/Br)
TPA6205A1ZQVR ACTIVE BGA MI
ZQV 8 2500 Pb-Free
CROSTA
R JUNI
OR
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device.
(RoHS)
(2)
Lead/Ball Finish MSL Peak Temp
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-1-260C-UNLIM
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
CU NIPDAU Level-2-260C-1 YEAR
SNAGCU Level-3-250C-1 WEEK
(3)
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
30-Jan-2007
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
TAPE AND REEL INFORMATION
19-Mar-2008
*All dimensions are nominal
Device Package
Type
TPA6205A1DGNR MSOP-
Power
TPA6205A1DRBR SON DRB 8 3000 330.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2
TPA6205A1DRBT SON DRB 8 250 180.0 12.4 3.3 3.3 1.1 8.0 12.0 Q2 TPA6205A1ZQVR BGA MI
CROSTA
R JUNI
PAD
OR
Package Drawing
DGN 8 2500 330.0 12.4 5.3 3.4 1.4 8.0 12.0 Q1
ZQV 8 2500 330.0 8.4 2.3 2.3 1.4 4.0 8.0 Q1
Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0 (mm) B0 (mm) K0 (mm) P1
(mm)W(mm)
Pin1
Quadrant
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
19-Mar-2008
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TPA6205A1DGNR MSOP-PowerPAD DGN 8 2500 346.0 346.0 29.0 TPA6205A1DRBR SON DRB 8 3000 346.0 346.0 29.0 TPA6205A1DRBT SON DRB 8 250 190.5 212.7 31.8 TPA6205A1ZQVR BGA MICROSTAR
JUNIOR
ZQV 8 2500 340.5 333.0 20.6
Pack Materials-Page 2
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