Filter and
I/V Gain Stage
Stereo Hi−Fi
Headphone Driver
TPA6120A2
DYR > 120 dB
for Whole
System!
OUT A
OUT B
OUT C
OUT D
C
F
2.7 nF
R
F
LIN−
LIN+
R
F
RIN−
RIN+
R
I
1 kΩ
1 kΩ
LOUT
ROUT
1 kΩ
R
F
R
O
10 Ω
R
O
10 Ω
1 kΩ
R
F
R
F
1 kΩ
R
I
1 kΩ
R
I
1 kΩ
R
I
1 kΩ
C
F
2.7 nF
R
F
1 kΩ
1 kΩ
C
F
2.7 nF
R
F
C
F
2.7 nF
R
F
1 kΩ
1 kΩ
1/2 OPA4134
1/2 OPA4134
−IN A
−IN B
+IN B
+IN A
−IN C
−IN D
+IN D
+IN C
PCM
Audio
Data
Source
Controller
PCM1792
or
DSD1792
LRCK
BCK
DATA
RST
SCK
MDO
MC
MDI
MS
ZEROL
ZEROR
I
OUT
L−
I
OUT
L+
I
OUT
R−
I
OUT
R+
AUDIO DAC
HIGH FIDELITY HEADPHONE AMPLIFIER
FEATURES DESCRIPTION
• 80 mW into 600 Ω From a ±12-V Supply at
0.00014% THD + N
• Current-Feedback Architecture
• Greater than 120 dB of Dynamic Range
• SNR of 120 dB
• Output Voltage Noise of 5 µVrms at
Gain = 2 V/V
• Power Supply Range: ±5 V to ±15 V
• 1300 V/µs Slew Rate
• Differential Inputs
• Independent Power Supplies for Low
Crosstalk
• Short Circuit and Thermal Protection
APPLICATIONS
• Professional Audio Equipment
• Mixing Boards
• Headphone Distribution Amplifiers
• Headphone Drivers
• Microphone Preamplifiers
TPA6120A2
SLOS431 – MARCH 2004
The TPA6120A2 is a high fidelity audio amplifier built
on a current-feedback architecture. This high
bandwidth, extremely low noise device is ideal for
high performance equipment. The better than 120 dB
of dynamic range exceeds the capabilities of the
human ear, ensuring that nothing audible is lost due
to the amplifier. The solid design and performance of
the TPA6120A2 ensures that music, not the amplifier,
is heard.
Three key features make current-feedback amplifiers
outstanding for audio. The first feature is the high
slew rate that prevents odd order distortion
anomalies. The second feature is current-on-demand
at the output that enables the amplifier to respond
quickly and linearly when necessary without risk of
output distortion. When large amounts of output
power are suddenly needed, the amplifier can respond extremely quickly without raising the noise
floor of the system and degrading the signal-to-noise
ratio. The third feature is the gain-independent frequency response that allows the full bandwidth of the
amplifier to be used over a wide range of gain
settings. The excess loop gain does not deteriorate at
a rate of 20 dB/decade.
PowerPAD is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
Copyright © 2004, Texas Instruments Incorporated
TPA6120A2
SLOS431 – MARCH 2004
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage.
ABSOLUTE MAXIMUM RATINGS
over operating free-air temperature range (unless otherwise noted)
Supply voltage, V
Input voltage, V
Differential input voltage, V
Minimum load impedance 8 Ω
Continuous total power dissipation See Dissipation Rating Table
Operating free–air temperature range, T
Operating junction temperature range, T
Storage temperature range, T
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 235°C
(1) Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating
conditions” is not implied. Exposure to absolute–maximum–rated conditions for extended periods may affect device reliability.
(2) When the TPA6120A2 is powered down, the input source voltage must be kept below 600-mV peak.
(3) The TPA6120A2 incorporates an exposed PowerPAD on the underside of the chip. This acts as a heatsink and must be connected to a
thermally dissipating plane for proper power dissipation. Failure to do so may result in exceeding the maximum junction temperature that
could permanently damage the device. See TI Technical Brief SLMA002 for more information about utilizing the PowerPAD thermally
enhanced package.
to V
CC+
(2)
I
CC-
ID
A
(3)
J
stg
(1)
TPA6120A2
33 V
± V
CC
6 V
- 40°C to 85°C
- 40°C to 150°C
- 40°C to 125°C
DISSIPATION RATING TABLE
(1)
θ
PACKAGE
JA
(°C/W) (°C/W) POWER RATING
DWP 44.4 33.8 2.8 W
θ
JC
TA= 25°C
(1) The PowerPAD must be soldered to a thermal land on the printed-circuit board. See the PowerPAD
Thermally Enhanced Package application note (SLMA002)
AVAILABLE OPTIONS
T
A
-40°C to 85°C DWP
(1) The DWP package is available taped and reeled. To order a taped and reeled part, add the suffix R
to the part number (e.g., TPA6120A2DWPR).
PACKAGE PART NUMBER SYMBOL
(1)
RECOMMENDED OPERATING CONDITIONS
Supply voltage, V
Load impedance V
Operating free–air temperature, T
and V
CC+
CC-
A
TPA6120A2DWP 6120A2
MIN MAX UNIT
Split Supply ±5 ±15
Single Supply 10 30
= ±5 V or ±15 V 16 Ω
CC
-40 85 °C
V
2
ELECTRICAL CHARACTERISTICS
over operating free-air temperature range (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
|V
| Input offset voltage (measured differentially) V
IO
PSRR Power supply rejection ratio V
V
IC
I
CC
I
O
r
i
r
o
V
O
Common mode input voltage V
Supply current (each channel) mA
Output current (per channel) VCC= ±5 V to ±15 V 700 mA
Input offset voltage drift V
Input resistance 300 kΩ
Output resistance Open Loop 13 Ω
Output voltage swing V
TPA6120A2
SLOS431 – MARCH 2004
= ±5 V or ±15 V 2 5 mV
CC
= 2.5 V to 5.5 V 75 dB
CC
V
= ±5 V ±3.6 ±3.7
CC
V
= ±15 V ±13.4 ±13.5
CC
V
= ±5 V 11.5 13
CC
VCC= ±15 V 15
= ±5 V or ±15 V 20 µV/°C
CC
= ±15 V, RL= 25 Ω V
CC
11.8 to 12.5 to
-11.5 -12.2
3
TPA6120A2
SLOS431 – MARCH 2004
OPERATING CHARACTERISTICS
TA= 25°C, RL= 25 Ω, Gain = 2 V/V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IMD
THD+N
k
SVR
CMRR V
SR Slew rate V/µs
V
n
SNR Signal-to-noise ratio RL= 32 Ω to 64 Ω dB
(1) For IMD, THD+N, k
Intermodulation distortion Gain = 2 V/V,
(SMPTE) IM frequency = 60 Hz
Total harmonic distortion
plus noise
Supply voltage rejection
ratio
Common mode rejection
ratio (differential)
Output noise voltage RL= 32 Ω to 64 Ω µVrms
Dynamic range dB
Crosstalk RL= 32 Ω to 64 Ω -90 dB
, and crosstalk, the bandwidth of the measurement instruments was set to 80 kHz.
SVR
(1)
V
= ±12 V to ±15 V,
CC
SMTPE ratio = 4:1,
High frequency = 7 kHz
PO= 100 mW, RL= 32 Ω
f = 1 kHz
PO= 100 mW, RL= 64 Ω
f = 1 kHz
V
= ±12 V, Gain = 3 V/V
CC
RL= 600 Ω, f = 1 kHz
V
= ±15 V, Gain = 3 V/V
CC
RL= 600 Ω, f = 1 kHz
V
= ±12 V,
CC
Gain = 3 V/V
V
= ±15 V,
CC
Gain = 3 V/V
RL= 32 Ω, 0.00014%
VI= 1 V
PP
V
= ±12 V to ±15 V,
CC
RL= 64 Ω, 0.000095%
VI= 1 V
PP
V
= ±12 V 0.00055%
CC
V
= ±15 V 0.00060%
CC
V
= ±12 V 0.00038%
CC
V
= ±15 V 0.00029%
CC
PO= 80 mW 0.00014%
PO= 40 mW 0.000065%
PO= 125 mW 0.00012%
PO= 62.5 mW 0.000061%
VO= 15 VPP,
RL= 10 kΩ 0.000024%
f = 1 kHz
VO= 15 VPP,
RL= 10 kΩ 0.000021%
f = 1 kHz
RL= 32 Ω VCC= ±12 V -80
f = 10 Hz to 22 kHz
V
= 1 V
(RIPPLE)
PP
VCC= ±15 V -83
RL= 64 Ω VCC= ±12 V -76
f = 10 Hz to 22 kHz
V
V
V
V
= 1 V
(RIPPLE)
= ±5 V or ±15 V 100 dB
CC
= ±15 V, Gain = 5 V/V, VO= 20 V
CC
= ±5 V, Gain = 2 V/V, VO= 5 V
CC
= ±12 V to ±15 V Gain = 2 V/V 5
CC
PP
f = 1 kHz
V
= ±12 V to ±15 V Gain = 2 V/V 125
CC
f = 1 kHz
RL= 32 Ω, f = 1 kHz
RL= 64 Ω, f = 1 kHz
V
= ±12 V to ±15 V
CC
f = 1 kHz
VCC= ±15 V -79
PP
PP
Gain = 100 V/V 50
Gain = 100 V/V 104
V
= ±12 V 123
CC
V
= ±15 V 125
CC
V
= ±12 V 124
CC
V
= ±15 V 126
CC
VI= 1 V
RMS
RF= 1 kΩ
1300
900
dB
4
DEVICE INFORMATION
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
LVCC−
LOUT
LVCC+
LIN+
LIN−
NC
NC
NC
NC
NC
RVCC−
ROUT
RVCC+
RIN+
RIN−
NC
NC
NC
NC
NC
NC − No internal connection
Thermally Enhansed SOIC (DWP)
PowerPAD™ Package
Top View
TERMINAL FUNCTIONS
PIN NAME PIN NUMBER I/O DESCRIPTION
LVCC- 1 I
LOUT 2 O Left channel output
LVCC+ 3 I Left channel positive power supply
LIN+ 4 I Left channel positive input
LIN- 5 I Left channel negative input
NC 6,7,8,9,10,11,12,13,14,15 - Not internally connected
RIN- 16 I Right channel negative input
RIN+ 17 I Right channel positive input
RVCC+ 18 I Right channel positive power supply
ROUT 19 O Right channel output
RVCC- 20 I
Thermal Pad - -
Left channel negative power supply – must be kept at the same potential as
RVCC-.
Right channel negative power supply - must be kept at the same potential as
LVCC-.
Connect to ground. The thermal pad must be soldered down in all
applications to properly secure device on the PCB.
TPA6120A2
SLOS431 – MARCH 2004
5
0.001
0.01
10 100 1 k 10 k 50 k
THD+N −Total Harmonic Distortion + Noise − %
f − Frequency − Hz
RL = 10 k,
Gain = 3 V/V ,
RF = 2 k,
RI = 1 k,
BW = 80 kHz
VCC = 15 VO = 15 V
PP
VCC = 12 VO = 15 V
PP
VCC = 12 VO = 12 V
PP
VCC = 15 VO = 23 V
PP
0.0001
0.00001
0.0001
0.001
0.01
10 100 1 k 10 k 50 k
RL = 600 ,
Gain = 3 V/V ,
RF = 2 k,
RI = 1 k,
BW = 80 kHz
THD+N −Total Harmonic Distortion + Noise − %
f − Frequency − Hz
VCC = 12 V ,
PO = 80 mW
VCC = 15 V ,
PO = 125 mW
TPA6120A2
SLOS431 – MARCH 2004
TYPICAL CHARACTERISTICS
Table of Graphs
vs Frequency 1, 2, 3, 4
Total harmonic distortion + noise vs Output voltage 5
vs Output power 6, 7, 8
Power dissipation vs Output power 9
Supply voltage rejection ratio vs Frequency 10, 11
Intermodulation distortion
Crosstalk vs Frequency 14
Signal-to-noise ratio vs Gain 15, 16
Slew rate vs Output step 17, 18
Small and large signal frequency response 19, 20
400-mV step response 21
10-V step response 22
20-V step response 23
vs High frequency 12
vs IM Amplitude 13
FIGURE
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
Figure 1. Figure 2.
6
0.0001
0.01
0.1
1 k 10 k 50 k
THD+N −Total Harmonic Distortion + Noise − %
f − Frequency − Hz
RL = 64 ,
Gain = 2 V/V ,
RF = 1 k,
RI = 1 k,
BW = 80 kHz
VCC = 15 V , PO = 700 mW
VCC = 15 V , PO = 1.35 W
10
100
VCC = 12 V , PO = 500 mW
VCC = 12 V , PO = 425 mW
0.001
THD+N −Total Harmonic Distortion + Noise − %
f − Frequency − Hz
0.001
1
10 100 1 k 10 k 50 k
0.01
0.1
RL = 32 ,
Gain = 2 V/V ,
RF = 1 k,
RI = 1 k,
BW = 80 kHz
0.0001
VCC = 15 V , PO = 1.5 W
VCC = 12 V , PO = 800 mW
VCC = 12 V , PO = 950 mW
VCC = 15 V , PO = 1.25 W
0.001
0.01
0.1
1
10
3 5 10 15 20 25 30 35
THD+N −Total Harmonic Distortion + Noise − %
VO − Output Voltage − V
PP
RL = 10 k,
Gain = 3 V/V ,
f = 1 kHz,
RF = 2 k,
RI = 1 k,
BW = 80 kHz
VCC = 12 V
VCC = 15 V
0.0001
0.00001
THD+N −Total Harmonic Distortion + Noise − %
PO − Output Power − W
0.00001
0.01
1
10
0.01 0.1 0.2
0.0001
0.001
0.1
VCC = 15 V
VCC = 12 V
RL = 600 ,
Gain = 3 V/V ,
f = 1 kHz,
RF = 2 k,
RI = 1 k,
BW = 80 kHz
TYPICAL CHARACTERISTICS (continued)
TPA6120A2
SLOS431 – MARCH 2004
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
FREQUENCY FREQUENCY
Figure 3. Figure 4.
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
OUTPUT VOLTAGE OUTPUT POWER
Figure 5. Figure 6.
7
THD+N −Total Harmonic Distortion + Noise − %
0.01
1
10
0.01 0.1 2
0.0001
0.001
0.1
PO − Output Power − W
VCC = 15 V
VCC = 12 V
1
RL = 64 ,
Gain = 2 V/V ,
f = 1 kHz,
RF = 1 k,
RI = 1 k,
BW = 80 kHz
THD+N −Total Harmonic Distortion + Noise − %
0.01
1
10
0.01 3
0.0001
0.001
0.1
PO − Output Power − W
VCC = 15 V
VCC = 12 V
0.1 1 2 4
RL = 32 ,
Gain = 2 V/V ,
f = 1 kHz,
RF = 1 k,
RI = 1 k,
BW = 80 kHz
−90
−80
−70
−60
−50
−40
−30
−20
0
10 100 1 k 10 k 50 k
32
k
SVR
− Supply Voltage Rejection Ratio − dB
f − Frequency − Hz
64
−10
VCC = 12 V ,
V
(ripple)
= 1 VPP,
Gain = 2 V/V
BW = 80 kHz
Representative of both positive and
negative supplies.
− Power Dissipation − W
P
D
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 0.5 1 1.5 2 2.5 3 3.5
VCC = 15 V , RL = 32
VCC = 15 V ,
RL = 64
VCC = 12 V ,
RL = 64
VCC = 12 V , RL = 32
PO − Output Power − W
Mono Operation
TPA6120A2
SLOS431 – MARCH 2004
TYPICAL CHARACTERISTICS (continued)
TOTAL HARMONIC DISTORTION + NOISE TOTAL HARMONIC DISTORTION + NOISE
vs vs
OUTPUT POWER OUTPUT POWER
Figure 7. Figure 8.
POWER DISSIPATION SUPPLY VOLTAGE REJECTION RATIO
vs vs
OUTPUT POWER FREQUENCY
8
Figure 9. Figure 10.